Observation of chaotic beats in a driven memristive Chua's circuit

In this paper, a time varying resistive circuit realising the action of an active three segment piecewise linear flux controlled memristor is proposed. Using this as the nonlinearity, a driven Chua's circuit is implemented. The phenomenon of chaotic beats in this circuit is observed for a suitable choice of parameters. The memristor acts as a chaotically time varying resistor (CTVR), switching between a less conductive OFF state and a more conductive ON state. This chaotic switching is governed by the dynamics of the driven Chua's circuit of which the memristor is an integral part. The occurrence of beats is essentially due to the interaction of the memristor aided self oscillations of the circuit and the external driving sinusoidal forcing. Upon slight tuning/detuning of the frequencies of the memristor switching and that of the external force, constructive and destructive interferences occur leading to revivals and collapses in amplitudes of the circuit variables, which we refer as chaotic beats. Numerical simulations and Multisim modelling as well as statistical analyses have been carried out to observe as well as to understand and verify the mechanism leading to chaotic beats.Comment: 30 pages, 16 figures; Submitted to IJB

Antimonotonicity, Crisis and Multiple Attractors in a Simple Memristive Circuit

Peer reviewedPostprin

Colpitts Chaotic Oscillator Coupling with a Generalized Memristor

By introducing a generalized memristor into a fourth-order Colpitts chaotic oscillator, a new memristive Colpitts chaotic oscillator is proposed in this paper. The generalized memristor is equivalent to a diode bridge cascaded with a first-order parallel RC filter. Chaotic attractors of the oscillator are numerically revealed from the mathematical model and experimentally captured from the physical circuit. The dynamics of the memristive Colpitts chaotic oscillator is investigated both theoretically and numerically, from which it can be found that the oscillator has a unique equilibrium point and displays complex nonlinear phenomena

The Fourth Element: Characteristics, Modelling, and Electromagnetic Theory of the Memristor

In 2008, researchers at HP Labs published a paper in {\it Nature} reporting the realisation of a new basic circuit element that completes the missing link between charge and flux-linkage, which was postulated by Leon Chua in 1971. The HP memristor is based on a nanometer scale TiO$_2$ thin-film, containing a doped region and an undoped region. Further to proposed applications of memristors in artificial biological systems and nonvolatile RAM (NVRAM), they also enable reconfigurable nanoelectronics. Moreover, memristors provide new paradigms in application specific integrated circuits (ASICs) and field programmable gate arrays (FPGAs). A significant reduction in area with an unprecedented memory capacity and device density are the potential advantages of memristors for Integrated Circuits (ICs). This work reviews the memristor and provides mathematical and SPICE models for memristors. Insight into the memristor device is given via recalling the quasi-static expansion of Maxwell's equations. We also review Chua's arguments based on electromagnetic theory.Comment: 28 pages, 14 figures, Accepted as a regular paper - the Proceedings of Royal Society

Phenomenology of retained refractoriness: On semi-memristive discrete media

We study two-dimensional cellular automata, each cell takes three states: resting, excited and refractory. A resting cell excites if number of excited neighbours lies in a certain interval (excitation interval). An excited cell become refractory independently on states of its neighbours. A refractory cell returns to a resting state only if the number of excited neighbours belong to recovery interval. The model is an excitable cellular automaton abstraction of a spatially extended semi-memristive medium where a cell's resting state symbolises low-resistance and refractory state high-resistance. The medium is semi-memristive because only transition from high- to low-resistance is controlled by density of local excitation. We present phenomenological classification of the automata behaviour for all possible excitation intervals and recovery intervals. We describe eleven classes of cellular automata with retained refractoriness based on criteria of space-filling ratio, morphological and generative diversity, and types of travelling localisations