Surface micromachined mechanisms and micromotors

Electric micromotors are sub-millimeter sized actuators capable of unrestrained motion in at least one degree of freedom. Polysilicon surface micromachining using heavily phosphorus-doped LPCVD polysilicon for the structural material, LPCVD silicon nitride for the electrical isolation and deposited silicon dioxide for the sacrificial material has formed the fabrication technology base for the development of these micromotors. Two polysilicon surface micromachining processes, referred to here as the center-pin and flange, have been demonstrated for the fabrication of passive mechanisms and micromotors. Passive mechanisms such as gear trains, cranks and manipulators have been implemented on silicon. Reported operational micromotors have been of the rotary variable-capacitance salient-pole and harmonic (or wobble) side-drive designs. These micromotors are capable of motive torques in the 10 pN m order of magnitude range. Preliminary progress has been made in studying the operational, friction and wear characteristics of these micromechanical devices. Typical operational voltages have been as low as 37 V and 26 V across 1.5 mu m air gap salient-pole and harmonic micromotors. These excitations correspond to electric field intensities above 10(8) Vm-1 in the micromotor air gaps. Salient-pole and wobble micromotors have been reported to operate at speeds as high as 15000 rpm and 700 rpm, respectively. Micromotor lifetimes of at least many millions of cycles over a period of several days have been reported

Fiber optic microphone having a pressure sensing reflective membrane and a voltage source for calibration purpose

A fiber optic microphone is provided for measuring fluctuating pressures. An optical fiber probe having at least one transmitting fiber for transmitting light to a pressure-sensing membrane and at least one receiving fiber for receiving light reflected from a stretched membrane is provided. The pressure-sensing membrane may be stretched for high frequency response. Further, a reflecting surface of the pressure-sensing membrane may have dimensions which substantially correspond to dimensions of a cross section of the optical fiber probe. Further, the fiber optic microphone can be made of materials for use in high temperature environments, for example greater than 1000 F. A fiber optic probe is also provided with a back plate for damping membrane motion. The back plate further provides a means for on-line calibration of the microphone

Design and fabrication of a miniature pressure sensor head using direct bonded ultra-thin silicon wafers

A miniature pressure sensor head is designed and fabricated using an ultra-thin silicon membrane directly bonded to an excimer laser micromachined substrate. The pressure sensor head has its intended implementation as part of an optically interrogated device with sensitivity to pressures ranging from 0.5 to 4.0 MPa. The pressure range design is shown to be easily adjusted by tailoring the thickness of the membrane wafer. The fabrication process features numerous advantages over existing pressure sensor construction technology including a maskless procedure and no chemical etching or mechanical thinning necessary to form the membrane after bonding. An optic lever is constructed and tested using a reflective aluminum surface. The response of the optic lever device was found to be 160 mV/µm in the linear region

High temperature fiber optic microphone having a pressure-sensing reflective membrane under tensile stress

A fiber optic microphone is provided for measuring fluctuating pressures. An optical fiber probe having at least one transmitting fiber for transmitting light to a pressure-sensing membrane and at least one receiving fiber for receiving light reflected from a stretched membrane is provided. The pressure-sensing membrane may be stretched for high frequency response. Further, a reflecting surface of the pressure-sensing membrane may have dimensions which substantially correspond to dimensions of a cross section of the optical fiber probe. Further, the fiber optic microphone can be made of materials for use in high temperature environments, for example greater than 1000 F. A fiber optic probe is also provided with a backplate for damping membrane motion. The backplate further provides a means for on-line calibration of the microphone

Remotely interrogated MEMS pressure sensor

This thesis considers the design and implementation of passive wireless microwave readable pressure sensors on a single chip. Two novel-all passive devices are considered for wireless pressure operation. The first device consists of a tuned circuit operating at 10 GHz fabricated on SiO2 membrane, supported on a silicon wafer. A pressure difference across the membrane causes it to deflect so that a passive resonant circuit detunes. The circuit is remotely interrogated to read off the sensor data. The chip area is 20 mm2 and the membrane area is 2mm2 with thickness of 4 µm. Two on chip passive resonant circuits were investigated: a meandered dipole and a zigzag antenna. Both have a physical length of 4.25 mm. the sensors show a shift in their resonant frequency in response to changing pressure of 10.28-10.27 GHz for the meandered dipole, and 9.61-9.58 GHz for the zigzag antenna. The sensitivities of the meandered dipole and zigzag sensors are 12.5 kHz and 16 kHz mbar, respectively. The second device is a pressure sensor on CMOS chip. The sensing element is capacitor array covering an area of 2 mm2 on a membrane. This sensor is coupled with a dipole antenna operating at 8.77 GHz. The post processing of the CMOS chip is carried out only in three steps, and the sensor on its own shows a sensitivity of 0.47fF/mbar and wireless sensitivity of 27 kHz/mbar. The MIM capacitors on membrane can be used to detune the resonant frequency of an antenna

Enhancements of MEMS design flow for Automotive and Optoelectronic applications

In the latest years we have been witnesses of a very rapidly and amazing grown of MicroElectroMechanical systems (MEMS) which nowadays represent the outstanding state-of-the art in a wide variety of applications from automotive to commercial, biomedical and optical (MicroOptoElectroMechanicalSystems). The increasing success of MEMS is found in their high miniaturization capability, thus allowing an easy integration with electronic circuits, their low manufacturing costs (that comes directly from low unit pricing and indirectly from cutting service and maintaining costs) and low power consumption. With the always growing interest around MEMS devices the necessity arises for MEMS designers to define a MEMS design flow. Indeed it is widely accepted that in any complex engineering design process, a well defined and documented design flow or procedure is vital. The top-level goal of a MEMS/MOEMS design flow is to enable complex engineering design in the shortest time and with the lowest number of fabrication iterations, preferably only one. These two characteristics are the measures of a good flow, because they translate directly to the industry-desirable reductions of the metrics “time to market” and “costs”. Like most engineering flows, the MEMS design flow begins with the product definition that generally involves a feasibility study and the elaboration of the device specifications. Once the MEMS specifications are set, a Finite Element Method (FEM) model is developed in order to study its physical behaviour and to extract the characteristic device parameters. These latter are used to develop a high level MEMS model which is necessary to the design of the sensor read out electronics. Once the MEMS geometry is completely defined and matches the device specifications, the device layout must be generated, and finally the MEMS sensor is fabricated. In order to have a MEMS sensor working according to specifications at first production run is essential that the MEMS design flow is as close as possible to the optimum design flow. The key factors in the MEMS design flow are the development of a sensor model as close as possible to the real device and the layout realization. This research work addresses these two aspects by developing optimized custom tools (a tool for layout check (LVS) and a tool for parasitic capacitances extraction) and new methodologies (a methodology for post layout simulations) which support the designer during the crucial steps of the design process as well as by presenting the models of two cases studies belonging to leading MEMS applications (a micromirror for laser projection system and a control loop for the shock immunity enhancement in gyroscopes for automotive applications)

Monolithic sensor integration in CMOS technologies

© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Besides being mainstream for mixed-signal electronics, CMOS technology can be used to integrate micro-electromechanical system (MEMS) on a single die, taking advantage of the structures and materials available in feature sizes around 180 nm. In this article, we demonstrate that the CMOS back-end-of-line (BEOL) layers can be postprocessed and be opportunistically used to create several kinds of MEMS sensors exhibiting good or even excellent performance, such as accelerometers, pressure sensors, and magnetometers. Despite the limitations of the available mechanical and material properties in CMOS technology, due to monolithic integration, these are compensated by the significant reduction of parasitics and system size. Furthermore, this work opens the path to create monolithic integrated multisensor (and even actuator) chips, including data fusion and intelligent processing.This work was supported in part by Baolab Microsystems; in part by the Spanish Ministry of Science, Innovation and Universities (MCIN); in part by the State Research Agency (AEI); in part by the European Social Fund (ESF) under Project RTI2018-099766-B-I00; in part by MCIN/AEI/10.13039/501100011033 under Grant PID2021-123535OB-I00; and in part by ERDF, “A way of making Europe.” The associate editor coordinating the review of this article and approving it for publication was Prof. Jean-Michel Redoute.Peer ReviewedPostprint (author's final draft

Development of MEMS Sensors for Measurements of Pressure, Relative Humidity, and Temperature

Continued demands for better control of the operating conditions of structures and processes have led to the need for better means of measuring temperature (T), pressure (P), and relative humidity (RH). One way to satisfy this need is to use MEMS technology to develop a sensor that will contain, in a single package, capabilities to simultaneously measure T, P, and RH of its environment. Because of the advantages of MEMS technology, which include small size, low power, very high precision, and low cost, it was selected for use in this thesis. Although MEMS sensors that individually measure T, P, and RH exist, there are no sensors that combine all three measurements in a single package. In this thesis, a piezoresistive pressure sensor and capacitive humidity sensor were developed to operate in the range, of 0 to 2 atm and 0% to 100%, respectively. Finally, a polysilicon resistor temperature sensor, which can work in the range of -50ºC to 150ºC, was analyzed. Multimeasurement capability will make this sensor particularly applicable for point-wise mapping of environmental conditions for advanced process control. In this thesis, the development of sensors for such an integrated device is outlined. Selected results, based on the use of analytical, computational, and experimental solutions (ACES) methodology, particularly suited for the development of MEMS sensors, are presented for the pressure, relative humidity, and temperature sensors

Master of Science

thesisThe design, working principle, fabrication, and characterization of ultrasensitive ferromagnetic and magnetoelectric magnetometer are discussed in this thesis. Different manufacturing techniques and materials were used for the fabrication of the two versions of the magnetometer. The ferromagnetic microelectromechanical systems (MEMS) magnetometer was fabricated using low-pressure chemical vapor deposition (LPCVD) of silicon nitride, yielding low compressive stress, followed by patterning. The built-in stress was found to be -14 Mpa using Tencor P-10 profilometer. A neodymium magnet (NdFeB) was used as a foot-mass to increase the sensitivity of the device. A coil (Ø=3 cm), placed at a distance from the sensor (2.5-15 cm), was used to produce the magnetic field. The response of the ferromagnetic MEMS magnetometer to the AC magnetic field was measured using Laser-Doppler vibrometer. The ferromagnetic sensor's average temperature sensitivity around room temperature was 11.9 pV/pT/-C, which was negligible. The resolution of the ferromagnetic sensor was found to be 27 pT (1 pT = 10-12 T). To further improve the sensitivity and eliminate the use of the optical detection method, we fabricated a Lead Zirconate titanate (PZT) based magnetoelectric sensor. The sensor structure consisted of a 9 mm long, and 0.17 mm thick PZT beam of varying widths. A neodymium permanent magnet was used as a foot-mass in this case as well. The magnetic field from the coil generated a driving force on the permanent magnet. The driving force displaced the free end of the PZT beam and generated a proportional voltage in the PZT layer. The magnetoelectric coupling, i.e., the coupling between mechanical and magnetic field, yielded a sensor resolution of ~40 fT (1 fT = 10-15 T); an improvement by three orders of magnitude. We used high permeability Mu sheets (0.003"") attached to copper plates (0.125"") to shield stray magnetic fields around the sensor. For both the ferromagnetic MEMS and the magnetoelectric magnetometer, the initial output was improved by using external bias and parametric amplification. By applying an external DC magnetic field bias to the sensor, the effective spring compliance of the sensor was modified. Electronic feedback reduced the active noise limiting the sensor's sensitivity. We used magnetic coupling to enhance the sensors' sensitivity and to reduce the electronic noise. Two identical sensors, with identical foot-mass (permanent magnet), was used to show coupling. The magnet on one of the sensors was mounted in NS polarity, whereas, on the other it was in SN polarity. When excited by the same external AC magnetic field (using coil), one of the sensors was pulled towards the coil and the other was pushed away from it. Adding the individual sensor output, using a preamplifier, an overall increase in sensors' output was observed. The techniques mentioned above helped to improve the output from the sensor. The sensitivity of the sensor can be improved further by using a 3-axis magnetic field cancellation system, by eliminating the AC and DC stray magnetic field, by using coupled-mode resonators and by increasing the surface field intensity of the foot-mass. The magnetometers, thus, developed can be used for mapping the magnetic print of the brain

Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-Force magnetometers

Tesi en modalitat de compendi de publicacionsToday, the most common form of mass-production semiconductor device fabrication is Complementary Metal-Oxide Semiconductor (CMOS) technology. The dedicated Integrated Circuit (IC) interfaces of commercial sensors are manufactured using this technology. The sensing elements are generally implemented using Micro-Electro-Mechanical-Systems (MEMS), which need to be manufactured using specialized micro-machining processes. Finally, the CMOS circuitry and the MEMS should ideally be combined in a single package. For some applications, integration of CMOS electronics and MEMS devices on a single chip (CMOS-MEMS) has the potential of reducing fabrication costs, size, parasitics and power consumption, compared to other integration approaches. Remarkably, a CMOS-MEMS device may be built with the back-end-of-line (BEOL) layers of the CMOS process. But, despite its advantages, this particular approach has proven to be very challenging given the current lack of commercial products in the market. The main objective of this Thesis is to prove that a high-performance MEMS, sealed and packaged in a standard package, may be accurately modeled and manufactured using the BEOL layers of a CMOS process in a reliable way. To attain this, the first highly reliable novel CMOS-MEMS Lorentz Force Magnetometer (LFM) was successfully designed, modeled, manufactured, characterized and subjected to several reliability tests, obtaining a comparable or superior performance to the typical solid-state magnetometers used in current smartphones. A novel technique to avoid magnetic offsets, the main drawback of LFMs, was presented and its performance confirmed experimentally. Initially, the issues encountered in the manufacturing process of MEMS using the BEOL layers of the CMOS process were discouraging. Vapor HF release of MEMS structures using the BEOL of CMOS wafers resulted in undesirable damaging effects that may lead to the conclusion that this manufacturing approach is not feasible. However, design techniques and workarounds for dealing with the observed issues were devised, tested and implemented in the design of the LFM presented in this Thesis, showing a clear path to successfully fabricate different MEMS devices using the BEOL.Hoy en día, la forma más común de producción en masa es una tecnología llamada Complementary Metal-Oxide Semiconductor (CMOS). La interfaz de los circuitos integrados (IC) de sensores comerciales se fabrica usando, precisamente, esta tecnología. Actualmente es común que los sensores se implementen usando Sistemas Micro-Electro-Mecánicos (MEMS), que necesitan ser fabricados usando procesos especiales de micro-mecanizado. En un último paso, la circuitería CMOS y el MEMS se combinan en un único elemento, llamado package. En algunas aplicaciones, la integración de la electrónica CMOS y los dispositivos MEMS en un único chip (CMOS-MEMS) alberga el potencial de reducir los costes de fabricación, el tamaño, los parásitos y el consumo, al compararla con otras formas de integración. Resulta notable que un dispositivo CMOS-MEMS pueda ser construido con las capas del back-end-of-line (BEOL) de un proceso CMOS. Pero, a pesar de sus ventajas, este enfoque ha demostrado ser un gran desafío como demuestra la falta de productos comerciales en el mercado. El objetivo principal de esta Tesis es probar que un MEMS de altas prestaciones, sellado y empaquetado en un encapsulado estándar, puede ser correctamente modelado y fabricado de una manera fiable usando las capas del BEOL de un proceso CMOS. Para probar esto mismo, el primer magnetómetro CMOS-MEMS de fuerza de Lorentz (LFM) fue exitosamente diseñado, modelado, fabricado, caracterizado y sometido a varias pruebas de fiabilidad, obteniendo un rendimiento comparable o superior al de los típicos magnetómetros de estado sólido, los cuales son usados en móviles actuales. Cabe destacar que en esta Tesis se presenta una novedosa técnica con la que se evitan offsets magnéticos, el mayor inconveniente de los magnetómetros de fuerza Lorentz. Su efectividad fue confirmada experimentalmente. En los inicios, los problemas asociados al proceso de fabricación de MEMS usando las capas BEOL de obleas CMOS resultaba desalentador. Liberar estructuras MEMS hechas con obleas CMOS con vapor de HF producía efectos no deseados que bien podrían llevar a la conclusión de que este enfoque de fabricación no es viable. Sin embargo, se idearon y probaron técnicas de diseño especiales y soluciones ad-hoc para contrarrestar estos efectos no deseados. Se implementaron en el diseño del magnetómetro de Lorentz presentado en esta Tesis, arrojando excelentes resultados, lo cual despeja el camino hacia la fabricación de diferentes dispositivos MEMS usando las capas BEOL.Postprint (published version