36 research outputs found
Design of Power/Analog/Digital Systems Through Mixed-Level Simulations
In recent years the development of the applications in the field of telecommunications, data processing, control, renewable energy generation, consumer and automotive electronics determined the need for increasingly complex systems, also in shorter time to meet the growing market demand. The increasing complexity is mainly due to the mixed nature of these systems that must be developed to accommodate the new functionalities and to satisfy the more stringent performance requirements of the emerging applications. This means a more complex design and verification process. The key to managing the increased design complexity is a structured and integrated design methodology which allows the sharing of different circuit implementations that can be at transistor level and/or at a higher level (i.e.HDL languages).In order to expedite the mixed systems design process it is necessary to provide: an integrated design methodology; a suitable supporting tool able to manage the entire design process and design complexity and its successive verification.It is essential that the different system blocks (power, analog, digital), described at different level of abstraction, can be co-simulated in the same design context. This capability is referred to as mixed-level simulation.One of the objectives of this research is to design a mixed system application referred to the control of a coupled step-up dc-dc converter. This latter consists of a power stage designed at transistor-level, also including accurate power device models, and the analog controller implemented using VerilogA modules. Digital controllers are becoming very attractive in dc-dc converters for their programmability, ability to implement sophisticated control schemes, and ease of integration with other digital systems. Thus, in this dissertation it will be presented a detailed design of a Flash Analog-to-Digital Converter (ADC). The designed ADC provides medium-high resolution associated to high-speed performance. This makes it useful not only for the control application aforementioned but also for applications with huge requirements in terms of speed and signal bandwidth. The entire design flow of the overall system has been conducted in the Cadence Design Environment that also provides the ability to mixed-level simulations. Furthermore, the technology process used for the ADC design is the IHP BiCMOS 0.25 µm by using 50 GHz NPN HBT devices
Time-based noise-shaping techniques for time-to-digital and analog-to-digital converters
In this dissertation, time-based signal processing techniques and their applications in oversampling and noise-shaping data converters are examined. These techniques demonstrate the ability to shift the burden of high performance analog circuits from the compressed voltage-domain to the augmented time-domain. First, the potential of high order noise-shaping and phase-domain feedback in time-to-digital converters (TDCs) is explored. A prototype phase reference, second-order continuous-time delta-sigma TDC for sensor applications was fabricated in 90nm CMOS and achieves 64 dB dynamic range in 1MHz signal bandwidth. Second, an ultra-high performance oscillator-based delta-sigma modulator architecture is investigated. The proposed circuit is a third-order continuous-time PLL-Based
Delta-Sigma Modulator with simulated 77 dB SNDR in 40MHz signal bandwidth with OSR of 16, and is fabricated in 65nm CMOS
Low-power high-performance SAR ADC with redundancy and digital background calibration
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.Cataloged from student-submitted PDF version of thesis.Includes bibliographical references (p. 195-199).As technology scales, the improved speed and energy eciency make the successive- approximation-register (SAR) architecture an attractive alternative for applications that require high-speed and high-accuracy analog-to-digital converters (ADCs). In SAR ADCs, the key linearity and speed limiting factors are capacitor mismatch and incomplete digital-to-analog converter (DAC)/reference voltage settling. In this the- sis, a sub-radix-2 SAR ADC is presented with several new contributions. The main contributions include investigation of using digital error correction (redundancy) in SAR ADCs for dynamic error correction and speed improvement, development of two new calibration algorithms to digitally correct for manufacturing mismatches, design of new architecture to incorporate redundancy within the architecture itself while achieving 94% better energy eciency compared to conventional switching algorithm, development of a new capacitor DAC structure to improve the SNR by four times with improved matching, joint design of the analog and digital circuits to create an asynchronous platform in order to reach the targeted performance, and analysis of key circuit blocks to enable the design to meet noise, power and timing requirements. The design is fabricated in standard 1P9M 65nm CMOS technology with 1.2V supply. The active die area is 0.083mm² with full rail-to-rail input swing of 2.4V p-p . A 67.4dB SNDR, 78.1dB SFDR, +1.0/-0.9 LSB₁₂ INL and +0.5/-0.7 LSB₁₂ DNL are achieved at 50MS/s at Nyquist rate. The total power consumption, including the estimated calibration and reference power, is 2.1mW, corresponding to 21.9fJ/conv.- step FoM. This ADC achieves the best FoM of any ADCs with greater than 10b ENOB and 10MS/s sampling rate.by Albert Hsu Ting Chang.Ph.D
High Performance Integrated Circuit Blocks for High-IF Wideband Receivers
Due to the demand for high‐performance radio frequency (RF) integrated circuit
design in the past years, a system‐on‐chip (SoC) that enables integration of analog and
digital parts on the same die has become the trend of the microelectronics industry. As
a result, a major requirement of the next generation of wireless devices is to support
multiple standards in the same chip‐set. This would enable a single device to support
multiple peripheral applications and services.
Based on the aforementioned, the traditional superheterodyne front‐end
architecture is not suitable for such applications as it would require a complete receiver
for each standard to be supported. A more attractive alternative is the highintermediate
frequency (IF) radio architecture. In this case the signal is digitalized at an
intermediate frequency such as 200MHz. As a consequence, the baseband operations,
such as down‐conversion and channel filtering, become more power and area efficient
in the digital domain. Such architecture releases the specifications for most of the front‐end building blocks, but the linearity and dynamic range of the ADC become the
bottlenecks in this system. The requirements of large bandwidth, high frequency and
enough resolution make such ADC very difficult to realize. Many ADC architectures
were analyzed and Continuous‐Time Bandpass Sigma‐Delta (CT‐BP‐ΣΔ) architecture was
found to be the most suitable solution in the high‐IF receiver architecture since they
combine oversampling and noise shaping to get fairly high resolution in a limited
bandwidth.
A major issue in continuous‐time networks is the lack of accuracy due to powervoltage‐
temperature (PVT) tolerances that lead to over 20% pole variations compared
to their discrete‐time counterparts. An optimally tuned BP ΣΔ ADC requires correcting
for center frequency deviations, excess loop delay, and DAC coefficients. Due to these
undesirable effects, a calibration algorithm is necessary to compensate for these
variations in order to achieve high SNR requirements as technology shrinks.
In this work, a novel linearization technique for a Wideband Low‐Noise
Amplifier (LNA) targeted for a frequency range of 3‐7GHz is presented. Post‐layout
simulations show NF of 6.3dB, peak S21 of 6.1dB, and peak IIP3 of 21.3dBm,
respectively. The power consumption of the LNA is 5.8mA from 2V.
Secondly, the design of a CMOS 6th order CT BP‐ΣΔ modulator running at 800
MHz for High‐IF conversion of 10MHz bandwidth signals at 200 MHz is presented. A
novel transconductance amplifier has been developed to achieve high linearity and high
dynamic range at high frequencies. A 2‐bit quantizer with offset cancellation is alsopresented. The sixth‐order modulator is implemented using 0.18 um TSMC standard
analog CMOS technology. Post‐layout simulations in cadence demonstrate that the
modulator achieves a SNDR of 78 dB (~13 bit) performance over a 14MHz bandwidth.
The modulator’s static power consumption is 107mW from a supply power of ± 0.9V.
Finally, a calibration technique for the optimization of the Noise Transfer
Function CT BP ΣΔ modulators is presented. The proposed technique employs two test
tones applied at the input of the quantizer to evaluate the noise transfer function of
the ADC, using the capabilities of the Digital Signal Processing (DSP) platform usually
available in mixed‐mode systems. Once the ADC output bit stream is captured,
necessary information to generate the control signals to tune the ADC parameters for
best Signal‐to‐Quantization Noise Ratio (SQNR) performance is extracted via Least‐
Mean Squared (LMS) software‐based algorithm. Since the two tones are located
outside the band of interest, the proposed global calibration approach can be used
online with no significant effect on the in‐band content
Parametric analog signal amplification applied to nanoscale cmos wireless digital transceivers
Thesis presented in partial fulfillment of the requirements for the degree of Doctor
of Philosophy in the subject of Electrical and Computer Engineering by the Universidade Nova de Lisboa,Faculdade de Ciências e TecnologiaSignal amplification is required in almost every analog electronic system. However
noise is also present, thus imposing limits to the overall circuit performance, e.g., on
the sensitivity of the radio transceiver. This drawback has triggered a major research
on the field, which has been producing several solutions to achieve amplification with minimum added noise. During the Fifties, an interesting out of mainstream path was followed which was based on variable reactance instead of resistance based amplifiers.
The principle of these parametric circuits permits to achieve low noise amplifiers since
the controlled variations of pure reactance elements is intrinsically noiseless. The
amplification is based on a mixing effect which enables energy transfer from an AC
pump source to other related signal frequencies.
While the first implementations of these type of amplifiers were already available at that time, the discrete-time version only became visible more recently. This discrete-time version is a promising technique since it is well adapted to the mainstream nanoscale CMOS technology. The technique itself is based on the principle of changing the surface potential of the MOS device while maintaining the transistor gate in a floating state.
In order words, the voltage amplification is achieved by changing the capacitance value
while maintaining the total charge unchanged during an amplification phase.
Since a parametric amplifier is not intrinsically dependent on the transconductance of the MOS transistor, it does not directly suffer from the intrinsic transconductance MOS gain issues verified in nanoscale MOS technologies. As a consequence, open-loop and opamp free structures can further emerge with this additional contribution.
This thesis is dedicated to the analysis of parametric amplification with special emphasis on the MOS discrete-time implementation. The use of the latter is supported on the presentation of several circuits where the MOS Parametric Amplifier cell is well suited:
small gain amplifier, comparator, discrete-time mixer and filter, and ADC. Relatively to the latter, a high speed time-interleaved pipeline ADC prototype is implemented in a,standard 130 nm CMOS digital technology from United Microelectronics Corporation (UMC). The ADC is fully based on parametric MOS amplification which means that one could achieve a compact and MOS-only implementation. Furthermore, any high
speed opamp has not been used in the signal path, being all the amplification steps
implemented with open-loop parametric MOS amplifiers. To the author’s knowledge,
this is first reported pipeline ADC that extensively used the parametric amplification
concept.Fundação para a Ciência e Tecnologia through
the projects SPEED, LEADER and IMPAC
Linearization of Time-encoded ADCs Architectures for Smart MEMS Sensors in Low Power CMOS Technology
Mención Internacional en el título de doctorIn the last few years, the development of mobile technologies and machine learning
applications has increased the demand of MEMS-based digital microphones.
Mobile devices have several microphones enabling noise canceling, acoustic beamforming
and speech recognition. With the development of machine learning applications
the interest to integrate sensors with neural networks has increased.
This has driven the interest to develop digital microphones in nanometer CMOS
nodes where the microphone analog-front end and digital processing, potentially
including neural networks, is integrated on the same chip.
Traditionally, analog-to-digital converters (ADCs) in digital microphones have
been implemented using high order Sigma-Delta modulators. The most common
technique to implement these high order Sigma-Selta modulators is switchedcapacitor
CMOS circuits. Recently, to reduce power consumption and make them
more suitable for tasks that require always-on operation, such as keyword recognition,
switched-capacitor circuits have been improved using inverter-based operational
amplifier integrators. Alternatively, switched-capacitor based Sigma-
Delta modulators have been replaced by continuous time Sigma-Delta converters.
Nevertheless, in both implementations the input signal is voltage encoded
across the modulator, making the integration in smaller CMOS nodes more challenging
due to the reduced voltage supply.
An alternative technique consists on encoding the input signal on time (or
frequency) instead of voltage. This is what time-encoded converters do. Lately,
time-encoding converters have gained popularity as they are more suitable to
nanometer CMOS nodes than Sigma-Delta converters. Among the ones that have
drawn more interest we find voltage-controlled oscillator based ADCs (VCOADCs).
VCO-ADCs can be implemented using CMOS inverter based ring oscillators
(RO) and digital circuitry. They also show noise-shaping properties.
This makes them a very interesting alternative for implementation of ADCs in
nanometer CMOS nodes. Nevertheless, two main circuit impairments are present
in VCO-ADCs, and both come from the oscillator non-idealities. The first of them
is the oscillator phase noise, that reduces the resolution of the ADC. The second
is the non-linear tuning curve of the oscillator, that results in harmonic distortion
at medium to high input amplitudes.
In this thesis we analyze the use of time encoding ADCs for MEMS microphones
with special focus on ring oscillator based ADCs (RO-ADCs). Firstly, we
study the use of a dual-slope based SAR noise shaped quantizer (SAR-NSQ) in
sigma-delta loops. This quantizer adds and extra level of noise-shaping to the modulator, improving the resolution. The quantizer is explained, and equations
for the noise transfer function (NTF) of a third order sigma-delta using a second
order filter and the NSQ are presented.
Secondly, we move our attention to the topic of RO-ADCs. We present a high
dynamic range MEMS microphone 130nm CMOS chip based on an open-loop
VCO-ADC. This dissertation shows the implementation of the analog front-end
that includes the oscillator and the MEMS interface, with a focus on achieving
low power consumption with low noise and a high dynamic range. The digital
circuitry is left to be explained by the coauthor of the chip in his dissertation. The
chip achieves a 80dBA peak SNDR and 108dB dynamic range with a THD of 1.5%
at 128 dBSPL with a power consumption of 438μW.
After that, we analyze the use of a frequency-dependent-resistor (FDR) to implement
an unsampled feedback loop around the oscillator. The objective is to reduce
distortion. Additionally phase noise mitigation is achieved. A first topology
including an operational amplifier to increase the loop gain is analyzed. The design
is silicon proven in a 130 nm CMOS chip that achieves a 84 dBA peak SNDR
with an analog power consumption of 600μW. A second topology without the
operational amplifier is also analyzed. Two chips are designed with this topology.
The first chip in 130 nm CMOS is a full VCO-ADC including the frequencyto-
digital converter (F2D). This chip achieves a peak SNDR of 76.6 dBA with a
power consumption of 482μW. The second chip includes only the oscillator and
is implemented in 55nm CMOS. The peak SNDR is 78.15 dBA and the analog
power consumption is 153μW.
To finish this thesis, two circuits that use an FDR with a ring oscillator are
presented. The first is a capacity-to-digital converter (CDC). The second is a filter
made with an FDR and an oscillator intended for voice activity detection tasks
(VAD).En los últimos años, el desarrollo de las tecnologías móviles y las aplicaciones de
machine-learning han aumentado la demanda de micrófonos digitales basados
en MEMS. Los dipositivos móviles tienen varios micrófonos que permiten la cancelación
de ruido, el beamforming o conformación de haces y el reconocimiento
de voz. Con el desarrollo de aplicaciones de aprendizaje automático, el interés
por integrar sensores con redes neuronales ha aumentado. Esto ha impulsado el
interés por desarrollar micrófonos digitales en nodos CMOS nanométricos donde
el front-end analógico y el procesamiento digital del micrófono, que puede
incluir redes neuronales, está integrado en el mismo chip.
Tradicionalmente, los convertidores analógicos-digitales (ADC) en micrófonos
digitales han sido implementados utilizando moduladores Sigma-Delta de
orden elevado. La técnica más común para implementar estos moduladores Sigma-
Delta es el uso de circuitos CMOS de capacidades conmutadas. Recientemente,
para reducir el consumo de potencia y hacerlos más adecuados para las tareas que
requieren una operación continua, como el reconocimiento de palabras clave, los
convertidores Sigma-Delta de capacidades conmutadas has sido mejorados con
el uso de integradores implementados con amplificadores operacionales basados
en inversores CMOS. Alternativamente, los Sigma-Delta de capacidades conmutadas
han sido reemplazados por moduladores en tiempo continuo. No obstante,
en ambas implementaciones, la señal de entrada es codificada en voltaje durante
el proceso de conversión, lo que hace que la integración en nodos CMOS más
pequeños sea complicada debido a la menor tensión de alimentación.
Una técnica alternativa consiste en codificar la señal de entrada en tiempo (o
frecuencia) en lugar de tensión. Esto es lo que hacen los convertidores de codificación
temporal. Recientemente, los convertidores de codificación temporal
han ganado popularidad ya que son más adecuados para nodos CMOS nanométricos
que los convertidores Sigma-Delta. Entre los que más interés han despertado
encontramos los ADCs basados en osciladores controlados por tensión
(VCO-ADC). Los VCO-ADC se pueden implementar usando osciladores en anillo
(RO) implementados con inversores CMOS y circuitos digitales. Esta familia
de convertidores también tiene conformado de ruido. Esto los convierte en una
alternativa muy interesante para la implementación de convertidores en nodos
CMOS nanométricos. Sin embargo, dos problemas principales están presentes en
este tipo de ADCs debidos ambos a las no idealidades del oscilador. El primero
de los problemas es la presencia de ruido de fase en el oscilador, lo que reduce la resolución del ADC. El segundo es la curva de conversion voltaje-frecuencia no
lineal del oscilador, lo que causa distorsión a amplitudes medias y altas.
En esta tesis analizamos el uso de ADCs de codificación temporal para micrófonos
MEMS, con especial interés en ADCS basados en osciladores de anillo
(RO-ADC). En primer lugar, estudiamos el uso de un cuantificador SAR con conformado
de ruido (SAR-NSQ) en moduladores Sigma-Delta. Este cuantificador
agrega un orden adicional de conformado de ruido al modulador, mejorando la
resolución. En este documento se explica el cuantificador y obtienen las ecuaciones
para la función de transferencia de ruido (NTF) de un sigma-delta de tercer
orden usando un filtro de segundo orden y el NSQ.
En segundo lugar, dirigimos nuestra atención al tema de los RO-ADC. Presentamos
el chip de un micrófono MEMS de alto rango dinámico en CMOS de
130 nm basado en un VCO-ADC de bucle abierto. En esta tesis se explica la implementación
del front-end analógico que incluye el oscilador y la interfaz con
el MEMS. Esta implementación se ha llevado a cabo con el objetivo de lograr un
bajo consumo de potencia, un bajo nivel de ruido y un alto rango dinámico. La
descripción del back-end digital se deja para la tesis del couator del chip. La
SNDR de pico del chip es de 80dBA y el rango dinámico de 108dB con una THD
de 1,5% a 128 dBSPL y un consumo de potencia de 438μW.
Finalmente, se analiza el uso de una resistencia dependiente de frecuencia
(FDR) para implementar un bucle de realimentación no muestreado alrededor
del oscilador. El objetivo es reducir la distorsión. Además, también se logra la
mitigación del ruido de fase del oscilador. Se analyza una primera topologia de
realimentación incluyendo un amplificador operacional para incrementar la ganancia
de bucle. Este diseño se prueba en silicio en un chip CMOS de 130nm que
logra un pico de SNDR de 84 dBA con un consumo de potencia de 600μW en la
parte analógica. Seguidamente, se analiza una segunda topología sin el amplificador
operacional. Se fabrican y miden dos chips diseñados con esta topologia.
El primero de ellos en CMOS de 130 nm es un VCO-ADC completo que incluye
el convertidor de frecuencia a digital (F2D). Este chip alcanza un pico SNDR de
76,6 dBA con un consumo de potencia de 482μW. El segundo incluye solo el oscilador
y está implementado en CMOS de 55nm. El pico SNDR es 78.15 dBA y el
el consumo de potencia analógica es de 153μW.
Para cerrar esta tesis, se presentan dos circuitos que usan la FDR con un oscilador
en anillo. El primero es un convertidor de capacidad a digital (CDC). El
segundo es un filtro realizado con una FDR y un oscilador, enfocado a tareas de
detección de voz (VAD).Programa de Doctorado en Ingeniería Eléctrica, Electrónica y Automática por la Universidad Carlos III de MadridPresidente: Antonio Jesús Torralba Silgado.- Secretaria: María Luisa López Vallejo.- Vocal: Pieter Rombout