Design of Low Leakage Multi Threshold (Vth) CMOS Level Shifter

In this paper, a low leakage multi Vth level shifter is designed for robust voltage shifting from sub threshold to above threshold domain using MTCMOS technique and sleepy keeper. MTCMOS is an effective circuit level technique that improves the performance and design by utilizing both low and high threshold voltage transistors. Leakage power dissipation has become an overriding concern for VLSI circuit designers. In this a “sleepy keeper” approach is preferred which reduces the leakage current while saving exact logic state. The new  low-power level shifter using sleepy keeper is compared with the previous work for different values of the lower supply voltage. When the circuits are individually analyzed for power consumption at 45nm CMOS technology, the new level shifter offer significant power savings up to 37% as compared to the previous work. Alternatively, when the circuits are individually analyzed for minimum propagation delay, speed is enhanced by up to 48% with  our approach to the circuit. All the simulation results are based on 45nm CMOS technology and  simulated in cadence tool.DOI:http://dx.doi.org/10.11591/ijece.v3i5.316

A fast and energy-efficient two-stage level shifter using the controlled Wilson current mirror

Multiple voltage domains are commonplace in modern SoCs and level shifter (LS) circuits allow different voltage domains to be interfaced with each other. As the reduced supply voltages are extensively used in digital blocks for low-power operation, the conversion of sub-threshold voltage levels to full VDD signal becomes a particular problem. In this paper we present a new LS structure for the fast and energy-efficient conversion of extremely low voltage levels. The proposed LS is a two-stage structure consisting of a controlled Wilson current mirror and eliminates the negative feedback mechanism. Inverted output of the second stage controls the current through the first stage. If the input signal is logical high (VDDL) then the circuit will produce high output (VDDH) and the first stage is prepared to conduct the current for logical 0 input (0V). This improves the slew rate problem and enables fast and energy-efficient operation. Considering process corners at a 90-nm technology node, the proposed design reliably converts 150-mV input signal into 1 V output signal. Post-layout results show that the proposed LS exhibits a propagation delay of 16 ns, a total energy per transition of only 79 fJ, and a static power dissipation of 16.6 nW for a 200 mV input signal at 1-MHz, while loading 100 fF of capacitive load

유전알고리즘 및 강화학습을 사용한 고속 회로 설계 자동화 프레임워크

학위논문(석사) -- 서울대학교대학원 : 융합과학기술대학원 지능정보융합학과, 2022.2. 전동석.Although design automation is a key enabler of modern large-scale digital systems, automating the transistor-level circuit design process still remains a challenge. Some recent works suggest that deep learning algorithms could be adopted to find optimal transistor dimensions in relatively small circuitry such as analog amplifiers. However, those approaches are not capable of exploring different circuit structures to meet the given design constraints. In this work, we propose an automatic circuit design framework that can generate practical circuit structures from scratch as well as optimize the size of each transistor, considering performance and reliability. We employ the framework to design level shifter circuits, and the experimental results show that the framework produces novel level shifter circuit topologies and the automatically optimized designs achieve 2.8-5.3× lower PDP than prior arts designed by human experts.설계 자동화는 대규모 디지털 시스템을 가능하게 하는 핵심 요소이지만 트랜지스터 수준에서 회로 설계 프로세스를 자동화하는 것은 여전히 어려운 과제로 남아 있습니다. 최근 연구에서는 아날로그 앰프와 같은 비교적 작은 회로에서 최적의 성능을 보이는 트랜지스터 크기를 찾기 위해 deep learning 알고리즘을 활용할 수 있다고 말합니다. 그러나 이러한 접근 방식은 주어진 설계 constraint를 충족하는 다른 회로 구조 탐색에 적용하기 어렵습니다. 본 연구에서는 성능과 신뢰성을 고려하여 각 트랜지스터의 크기를 최적화할 뿐만 아니라 처음부터 실용적인 회로 구조를 생성할 수 있는 자동 회로 설계 framework를 제안합니다. 우리는 framework를 사용하여 level shifter 회로를 설계했으며 실험 결과는 프레임워크가 새로운 level shifter 회로 토폴로지를 생성하고 자동으로 최적화된 설계가 인간 전문가가 설계한 선행 기술보다 2.8-5.3배 더 낮은 PDP를 달성한다는 것을 보여줍니다.Abstract i Contents ii List of Tables iv List of Figures v List of Algorithms vi 1 Introduction 1 2 Related work 6 2.1 Genetic Algorithm 6 2.2 NeuroEvolution of Augmenting Topologies (NEAT) 7 2.3 Reinforcement Learning (RL) 10 2.4 DDPG, D4PG, and PPO 12 2.5 Level Shifter 14 3 Proposed circuit design framework 17 3.1 Topology Generator 17 3.2 Circuit Optimizer 25 4 Experiment Result 32 4.1 Level Shifter Design 32 4.2 Topology Generation 34 4.3 Circuit Optimization 36 4.4 Test Chip Fabrication 42 4.5 Applicability of Topology Generator 47 5 Conclusion 50 Abstract (In Korean) 57석

ULTRA ENERGY-EFFICIENT SUB-/NEAR-THRESHOLD COMPUTING: PLATFORM AND METHODOLOGY

Ph.DDOCTOR OF PHILOSOPH

Design and Implementation of Low Power SRAM Using Highly Effective Lever Shifters

The explosive growth of battery-operated devices has made low-power design a priority in recent years. In high-performance Systems-on-Chip, leakage power consumption has become comparable to the dynamic component, and its relevance increases as technology scales. These trends are even more evident for SRAM memory devices since they are a dominant source of standby power consumption in low-power application processors. The on-die SRAM power consumption is particularly important for increasingly pervasive mobile and handheld applications where battery life is a key design and technology attribute. In the SRAM-memory design, SRAM cells also comprise the most significant portion of the total chip. Moreover, the increasing number of transistors in the SRAM memories and the MOSs\u27 increasing leakage current in the scaled technologies have turned the SRAM unit into a power-hungry block for both dynamic and static viewpoints. Although the scaling of the supply voltage enables low-power consumption, the SRAM cells\u27 data stability becomes a major concern. Thus, the reduction of SRAM leakage power has become a critical research concern. To address the leakage power consumption in high-performance cache memories, a stream of novel integrated circuit and architectural level techniques are proposed by researchers including leakage-current management techniques, cell array leakage reduction techniques, bitline leakage reduction techniques, and leakage current compensation techniques. The main goal of this work was to improve the cell array leakage reduction techniques in order to minimize the leakage power for SRAM memory design in low-power applications. This study performs the body biasing application to reduce leakage current as well. To adjust the NMOSs\u27 threshold voltage and consequently leakage current, a negative DC voltage could be applied to their body terminal as a second gate. As a result, in order to generate a negative DC voltage, this study proposes a negative voltage reference that includes a trimming circuit and a negative level shifter. These enhancements are employed to a 10kb SRAM memory operating at 0.3V in a 65nm CMOS process

CMOS Integrated Power Amplifiers for RF Reconfigurable and Digital Transmitters

abstract: This dissertation focuses on three different efficiency enhancement methods that are applicable to handset applications. These proposed designs are based on three critical requirements for handset application: 1) Small form factor, 2) CMOS compatibility and 3) high power handling. The three presented methodologies are listed below: 1) A transformer-based power combiner architecture for out-phasing transmitters 2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA) 3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB. The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%. Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Integrated temperature sensors in deep sub-micron CMOS technologies

textIntegrated temperature sensors play an important role in enhancing the performance of on-chip power and thermal management systems in today's highly-integrated system-on-chip (SoC) platforms, such as microprocessors. Accurate on-chip temperature measurement is essential to maximize the performance and reliability of these SoCs. However, due to non-uniform power consumption by different functional blocks, microprocessors have fairly large thermal gradient (and variation) across their chips. In the case of multi-core microprocessors for example, there are task-specific thermal gradients across different cores on the same die. As a result, multiple temperature sensors are needed to measure the temperature profile at all relevant coordinates of the chip. Subsequently, the results of the temperature measurements are used to take corrective measures to enhance the performance, or save the SoC from catastrophic over-heating situations which can cause permanent damage. Furthermore, in a large multi-core microprocessor, it is also imperative to continuously monitor potential hot-spots that are prone to thermal runaway. The locations of such hot spots depend on the operations and instruction the processor carries out at a given time. Due to practical limitations, it is an overkill to place a big size temperature sensor nearest to all possible hot spots. Thus, an ideal on-chip temperature sensor should have minimal area so that it can be placed non-invasively across the chip without drastically changing the chip floor plan. In addition, the power consumption of the sensors should be very low to reduce the power budget overhead of thermal monitoring system, and to minimize measurement inaccuracies due to self-heating. The objective of this research is to design an ultra-small size and ultra-low power temperature sensor such that it can be placed in the intimate proximity of all possible hot spots across the chip. The general idea is to use the leakage current of a reverse-bias p-n junction diode as an operand for temperature sensing. The tasks within this project are to examine the theoretical aspect of such sensors in both Silicon-On-Insulator (SOI), and bulk Complementary Metal-Oxide Semiconductor (CMOS) technologies, implement them in deep sub-micron technologies, and ultimately evaluate their performances, and compare them to existing solutions.Electrical and Computer Engineerin

Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book