On evolution of CMOS image sensors

CMOS Image Sensors have become the principal technology in majority of digital cameras. They started replacing the film and Charge Coupled Devices in the last decade with the promise of lower cost, lower power requirement, higher integration and the potential of focal plane processing. However, the principal factor behind their success has been the ability to utilise the shrinkage in CMOS technology to make smaller pixels, and thereby have more resolution without increasing the cost. With the market of image sensors exploding courtesy their inte- gration with communication and computation devices, technology developers improved the CMOS processes to have better optical performance. Nevertheless, the promises of focal plane processing as well as on-chip integration have not been fulfilled. The market is still being pushed by the desire of having higher number of pixels and better image quality, however, differentiation is being difficult for any image sensor manufacturer. In the paper, we will explore potential disruptive growth directions for CMOS Image sensors and ways to achieve the same

Advances on CMOS image sensors

This paper offers an introduction to the technological advances of image sensors designed using complementary metal–oxide–semiconductor (CMOS) processes along the last decades. We review some of those technological advances and examine potential disruptive growth directions for CMOS image sensors and proposed ways to achieve them. Those advances include breakthroughs on image quality such as resolution, capture speed, light sensitivity and color detection and advances on the computational imaging. The current trend is to push the innovation efforts even further as the market requires higher resolution, higher speed, lower power consumption and, mainly, lower cost sensors. Although CMOS image sensors are currently used in several different applications from consumer to defense to medical diagnosis, product differentiation is becoming both a requirement and a difficult goal for any image sensor manufacturer. The unique properties of CMOS process allows the integration of several signal processing techniques and are driving the impressive advancement of the computational imaging. With this paper, we offer a very comprehensive review of methods, techniques, designs and fabrication of CMOS image sensors that have impacted or might will impact the images sensor applications and markets

High performances monolithic CMOS detectors for space applications

During the last 10 years, research about CMOS image sensors (also called APS -Active Pixel Sensors) has been intensively carried out, in order to offer an alternative to CCDs as image sensors. This is particularly the case for space applications as CMOS image sensors feature characteristics which are obviously of interest for flight hardware: parallel or semi-parallel architecture, on chip control and processing electronics, low power dissipation, high level ofradiation tolerance... Many image sensor companies, institutes and laboratories have demonstrated the compatibility of CMOS image sensors with consumer applications: micro-cameras, video-conferencing, digital-still cameras. And recent designs have shown that APS is getting closer to the CCD in terms ofperformance level. However, the large majority ofthe existing products do not offer the specific features which are required for many space applications. ASTRI1JM and SUPAERO/CIMI have decided to work together in view of developing CMOS image sensors dedicated to space business. After a brief presentation of the team organisation for space image sensor design and production, the latest results of a high performances 512x512 pixels CMOS device characterisation are presented with emphasis on the achieved electro-optical performance. Finally, the on going and short-term coming activities of the team are discussed

Low-frequency noise impact on CMOS image sensors

CMOS image sensors are nowadays extensively used in imaging applications even for high-end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout. Random Telegraph Signal (RTS) noise has thus become an issue for low light level applications especially in the context of downscaling transistor size. This paper describes the analysis of in-pixel source follower transistor RTS noise filtering by CDS circuit. The measurement of a non Gaussian distribution with a positive skew of image sensor output noise is analysed. Impact of dimensions (W and L) of the in-pixel source follower is demonstrated. Circuit to circuit pixel output noise dispersion on 12 circuits coming from 3 different wafers is also analysed and weak dispersion is seen

Precision of a Low-Cost InGaAs Detector for Near Infrared Photometry

We have designed, constructed, and tested an InGaAs near-infrared camera to explore whether low-cost detectors can make small (<1 m) telescopes capable of precise (<1 mmag) infrared photometry of relatively bright targets. The camera is constructed around the 640x512 pixel APS640C sensor built by FLIR Electro-Optical Components. We designed custom analog-to-digital electronics for maximum stability and minimum noise. The InGaAs dark current halves with every 7 deg C of cooling, and we reduce it to 840 e-/s/pixel (with a pixel-to-pixel variation of +/-200 e-/s/pixel) by cooling the array to -20 deg C. Beyond this point, glow from the readout dominates. The single-sample read noise of 149 e- is reduced to 54 e- through up-the-ramp sampling. Laboratory testing with a star field generated by a lenslet array shows that 2-star differential photometry is possible to a precision of 631 +/-205 ppm (0.68 mmag) hr^-0.5 at a flux of 2.4E4 e-/s. Employing three comparison stars and de-correlating reference signals further improves the precision to 483 +/-161 ppm (0.52 mmag) hr^-0.5. Photometric observations of HD80606 and HD80607 (J=7.7 and 7.8) in the Y band shows that differential photometry to a precision of 415 ppm (0.45 mmag) hr^-0.5 is achieved with an effective telescope aperture of 0.25 m. Next-generation InGaAs detectors should indeed enable Poisson-limited photometry of brighter dwarfs with particular advantage for late-M and L types. In addition, one might acquire near-infrared photometry simultaneously with optical photometry or radial velocity measurements to maximize the return of exoplanet searches with small telescopes.Comment: Accepted to PAS