A Low-Cost CMOS-MEMS Piezoresistive Accelerometer with Large Proof Mass

This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive sensing material. A full Wheatstone bridge was constructed through easy wiring allowed by the three metal layers in the 0.5 μm CMOS technology. The device fabrication process consisted of a standard CMOS process for sensor configuration, and a deep reactive ion etching (DRIE) based post-CMOS microfabrication for MEMS structure release. A bulk single-crystal silicon (SCS) substrate is included in the proof mass to increase sensor sensitivity. In device design and analysis, the self heating of the polysilicon piezoresistors and its effect to the sensor performance is also discussed. With a low operating power of 1.5 mW, the accelerometer demonstrates a sensitivity of 0.077 mV/g prior to any amplification. Dynamic tests have been conducted with a high-end commercial calibrating accelerometer as reference

DESIGN AND MICROFABRICATION OF A CMOS-MEMS PIEZORESISTIVE ACCELEROMETER AND A NANO-NEWTON FORCE SENSOR

DESIGN AND MICROFABRICATION OF A CMOS-MEMS PIEZORESISTIVE ACCELEROMETER AND A NANO-NEWTON FORCE SENSOR by Mohd Haris Md Khir Adviser: Hongwei Qu, Ph.D. This thesis work consists of three aspects of research efforts: I. Design, fabrication, and characterization of a CMOS-MEMS piezoresistive accelerometer 2. Design, fabrication, and characterization of a CMOS-MEMS nano-Newton force sensor 3. Observer-based controller design of a nano-Newton force sensor actuator system A low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass has been fabricated. Inherent CMOS polysilicon thin film was utilized as piezoresistive material and full Wheatstone bridge was constructed through easy wiring allowed by three metal layers in CMOS thin films. The device fabrication process consists of a standard CMOS process for sensor configuration and a deep reactive ion etching (DRIE) based post-CMOS microfabrication for MEMS structure release. Bulk single-crystal silicon (SCS) substrate was included in the proof mass to increase sensor sensitivity. Using a low operating power of 1.67 m W, the sensitivity was measured as 30.7 mV/g after amplification and 0.077 mV/g prior to amplification. With a total noise floor of 1.03 mg!-!Hz, the minimum detectable acceleration is found to be 32.0 mg for a bandwidth of I kHz which is sufficient for many applications. The second device investigated in this thesis work is a CMOS-MEMS capacitive force sensor capable ofnano-Newton out-of-plane force measurement. Sidewall and fringe capacitance formed by the multiple CMOS metal layers were utilized and fully differential sensing was enabled by common-centroid wiring of the sensing capacitors. Single-crystal silicon (SCS) is incorporated in the entire sensing element for robust structures and reliable sensor deployment in force measurement. A sensitivity of 8 m V /g prior to amplification was observed. With a total noise floor of 0.63 mg!-IHz, the minimum detection acceleration is found to be 19.8 mg, which is equivalent to a sensing force of 449 nN. This work also addresses the design and simulation of an observer-based nonlinear controller employed in a CMOS-MEMS nano-Newton force sensor actuator system. Measurement errors occur when there are in-plane movements of the probe tip; these errors can be controlled by the actuators incorporated within the sensor. Observerbased controller is necessitated in real-world control applications where not all the state variables are accessible for on-line measurements. V

Sensing Movement: Microsensors for Body Motion Measurement

Recognition of body posture and motion is an important physiological function that can keep the body in balance. Man-made motion sensors have also been widely applied for a broad array of biomedical applications including diagnosis of balance disorders and evaluation of energy expenditure. This paper reviews the state-of-the-art sensing components utilized for body motion measurement. The anatomy and working principles of a natural body motion sensor, the human vestibular system, are first described. Various man-made inertial sensors are then elaborated based on their distinctive sensing mechanisms. In particular, both the conventional solid-state motion sensors and the emerging non solid-state motion sensors are depicted. With their lower cost and increased intelligence, man-made motion sensors are expected to play an increasingly important role in biomedical systems for basic research as well as clinical diagnostics

MEMS Accelerometers

Micro-electro-mechanical system (MEMS) devices are widely used for inertia, pressure, and ultrasound sensing applications. Research on integrated MEMS technology has undergone extensive development driven by the requirements of a compact footprint, low cost, and increased functionality. Accelerometers are among the most widely used sensors implemented in MEMS technology. MEMS accelerometers are showing a growing presence in almost all industries ranging from automotive to medical. A traditional MEMS accelerometer employs a proof mass suspended to springs, which displaces in response to an external acceleration. A single proof mass can be used for one- or multi-axis sensing. A variety of transduction mechanisms have been used to detect the displacement. They include capacitive, piezoelectric, thermal, tunneling, and optical mechanisms. Capacitive accelerometers are widely used due to their DC measurement interface, thermal stability, reliability, and low cost. However, they are sensitive to electromagnetic field interferences and have poor performance for high-end applications (e.g., precise attitude control for the satellite). Over the past three decades, steady progress has been made in the area of optical accelerometers for high-performance and high-sensitivity applications but several challenges are still to be tackled by researchers and engineers to fully realize opto-mechanical accelerometers, such as chip-scale integration, scaling, low bandwidth, etc

Development of a three-axis MEMS accelerometer

While originally developed to deploy air bags for the automotive industry, Microelectromechanical Systems (MEMS) based accelerometers have found their way into everything from video game controllers to cells phones. As prices drop and capabilities improve, it is expected that the use of accelerometers will further expand in the coming years. Accelerometers currently have the second highest MEMS sales volume, trailing only pressure sensors [1]. In this work several single and three-axis accelerometers are designed, fabricated, and tested under a variety of conditions. The designed accelerometers are all based off of the piezoresistive effect, where the value of a resistor changes with applied mechanical stress [2]. When accelerated, the inertia of a suspended proof mass causes stress on piezoresistors placed on support arms. The corresponding changes in these resistor values are then converted to an output voltage using a Wheatstone bridge. To sense acceleration independently in all three axes, structures with three distinct modes of vibration and three sets of Wheatstone bridges are used. Devices were fabricated at the Semiconductor and Microsystems Fabrication Laboratory (SMFL), located at RIT. A modified version of the RIT bulk MEMS process was used, consisting of 65 steps, 7 photolithography masks, bulk silicon diaphragm etch, and top hole release etch [3]. Unfortunately the finished chips show poor aluminum step coverage into contact vias and over polysilicon lines. This results in open circuits throughout the chip, prohibiting proper operation. Process corrections have been identified, and with proper fabrication the designs are still expected to yield working devices. Since the finished accelerometers were not functional, several commercial accelerometers have been tested to characterize sensitivity, linearity, cross-axis sensitivity, frequency response, and device lifetime

Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer

In this paper, we discuss the analysis of out-of-plane characterization of a capacitive tri-axis accelerometer fabricated using SOI MUMPS (Silicon-on Insulator Multi user MEMS Processes) process flow and the results are compared with simulated results. The device is designed with wide operational 3 dB bandwidth suitable for measuring vibrations in industrial applications. The wide operating range is obtained by optimizing serpentine flexures at the four corners of the proof mass. The accelerometer structure was simulated using COMSOL Multiphysics and the displacement sensitivity was observed as 1.2978 nm/g along z-axis. The simulated resonant frequency of the device was found to be 13 kHz along z axis. The dynamic characterization of the fabricated tri-axis accelerometer produces the out-of-plane vibration mode frequency as 13 kHz which is same as the simulated result obtained in z-axis

Nanoelectromechanical Sensors based on Suspended 2D Materials

The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of using suspended membranes of 2D materials in pressure sensors, microphones, accelerometers, and mass and gas sensors. In this review, we explain the different sensing concepts and give an overview of the relevant material properties, fabrication routes, and device operation principles. Finally, we discuss sensor readout and integration methods and provide comparisons against the state of the art to show both the challenges and promises of 2D material-based nanoelectromechanical sensing.Comment: Review pape

System design of a low-power three-axis underdamped MEMS accelerometer with simultaneous electrostatic damping control

Recently, consumer electronics industry has known a spectacular growth that would have not been possible without pushing the integration barrier further and further. Micro Electro Mechanical Systems (MEMS) inertial sensors (e.g. accelerometers, gyroscopes) provide high performance, low power, low die cost solutions and are, nowadays, embedded in most consumer applications. In addition, the sensors fusion has become a new trend and combo sensors are gaining growing popularity since the co-integration of a three-axis MEMS accelerometer and a three-axis MEMS gyroscope provides complete navigation information. The resulting device is an Inertial measurement unit (IMU) able to sense multiple Degrees of Freedom (DoF). Nevertheless, the performances of the accelerometers and the gyroscopes are conditioned by the MEMS cavity pressure: the accelerometer is usually a damped system functioning under an atmospheric pressure while the gyroscope is a highly resonant system. Thus, to conceive a combo sensor, aunique low cavity pressure is required. The integration of both transducers within the same low pressure cavity necessitates a method to control and reduce the ringing phenomena by increasing the damping factor of the MEMS accelerometer. Consequently, the aim of the thesis is the design of an analog front-end interface able to sense and control an underdamped three-axis MEMSaccelerometer. This work proposes a novel closed-loop accelerometer interface achieving low power consumption The design challenge consists in finding a trade-off between the sampling frequency, the settling time and the circuit complexity since the sensor excitation plates are multiplexed between the measurement and the damping phases. In this context, a patenteddamping sequence (simultaneous damping) has been conceived to improve the damping efficiency over the state of the art approach performances (successive damping). To investigate the feasibility of the novel electrostatic damping control architecture, several mathematical models have been developed and the settling time method is used to assess the damping efficiency. Moreover, a new method that uses the multirate signal processing theory and allows the system stability study has been developed. This very method is used to conclude on the loop stability for a certain sampling frequency and loop gain value. Next, a 0.18μm CMOS implementation of the entire accelerometer signal chain is designed and validated

Capacitive Microaccelerometers And Fabrication Methods

Disclosed are moveable microstructures comprising in-plane capacitive microaccelerometers, with submicro-gravity resolution (17 pF/g). Themicrostructures are fabricated in thick(> 100 µm) siliconon-insulator (SOI) substrates or silicon substrates using a two-mask fully-dry release process that provides large seismic mass (> 10 milli-g), reduced capacitive gaps, and reduced in-plane stiffness. Fabricated devices may be interfaced to a high resolution switched-capacitor CMOS IC that eliminates the need for area-consuming reference capacitors. The measured sensitivity is 83 mV/mg (17 pF/g) and the output noise floor is -91 dBm/Hz at 10 Hz (corresponding to an acceleration resolution of 170 ng/√Hz). The IC consumes 6 mW power and measures 0.65 mm2 core area.Georgia Tech Research Corporatio