A review of technologies and design techniques of millimeter-wave power amplifiers

his article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design

THERMAL MODELING AND CHARACTERIZATION OF HIGH POWER DEVICES

Ph.DDOCTOR OF PHILOSOPH

Novel MMIC design process using waveform engineering

It has always been the case that talented individuals with an innate understanding of their subject have been able to produce works of outstanding performance. The purpose of engineering science is to define ways in which such achievements can be made on a regular,predictable basis with a high degree of confidence in success. Some tools, such as computers, have enabled an increase in speed and accuracy, whilst others have given a dramatic increase in the insight into the operation or behavior of materials; the electron microscope for instance. Still others have enabled the creation of devices on a scale unimaginable to our predecessors, Molecular Beam Epitaxy for example. This work is the product of the availability of an understanding of complex theory on microwave transistor operation, significant increases in mathematical processing and data handling, and the assembly of a ‘tool’ that not only allows the measurement of high frequency waveforms, but their manipulation to simultaneously create the environments envisioned by the design engineer. It extends the operation of previous narrow band active load pull measurement systems to 40GHz and importantly facilitates the design of high efficiency modes at X band. The main tenant of this work is to propose that rather than the linear approach of characterisation, design, test, re-iterate, that has been the standard approach to MMIC design to date, the first three stages should be integrated into a single approach which should obviate the need for design reiteration. The result of this approach should be better performance from amplifier designs, greater probability of success first time, and lower costs through less wafer real estate being consumed and fewer sign ‘spins’

Advanced High Efficiency Architectures for Next Generation Wireless Communications

L'abstract è presente nell'allegato / the abstract is in the attachmen

DESIGN OF A GAAS DISTRIBUTED AMPLIFIER WITH LC TRAPS BASED BROADBAND LINEARIZATION

Increasing the linearity of power amplifiers has been an important area of research because its signal integrity influences the performance of the entire transreceiver system and there are strict regulatory requirements on them. Due to the nonlinear behaviour of power amplifiers, third order intermodulation products are generated close to the desired signals and cannot be removed by filters. Increasing linearity will help bring these distortion products closer to the noise floor. However, it is not an easy task to increase linearity without trading off output power. To maintain the same level of output power generated but with higher linearity, many techniques, each with its own pros and cons, have been implemented to linearize an amplifier. Techniques involving feedback are seriously limited in terms of modulation bandwidth whereas methods such as predistortion and feedforward are very difficult to implement. This project seeks to use a simple method of placing terminations directly to the distributed amplifier (DA), making it a device level linearization technique and can be used in addition to the other system level techniques mentioned earlier. To increase linearity over a broad bandwidth of 0.5 to 3.0 GHz, this work proposes using low impedance terminations (LC traps) at the envelope frequency to the input and output of several distributed amplifiers. This research is novel since this is the first time broadband improvement in linearity has been demonstrated using the LC trap method. Two design iterations were completed (first design iteration has four variants to test the output trap while the second design iteration has three variants to test the input trap). The low impedance terminations are implemented using inductor-capacitor networks that are external to the monolithic microwave integrated circuit (MMIC). Design and layout of the DAs were carried out using Agilent’s Advanced Design System (ADS). Results show that placing the traps at the output of the DA does not truly affect the linearity of the device at lower frequencies but provide an improvement of 1.6 dB and 3.4 dB to the third-order output intercept point (OIP3) at 2.5 GHz and 3.0 GHz, respectively. With traps at the input, measurement results at -5 dBm input power, viii 1.375 V base bias (61 mA total collector current) and 10 MHz two tone spacing show a broadband improvement throughout the band (0.5 GHz to 3.0 GHz) of 3.3 dB to 7.4 dB in OIP3. Furthermore, the OIP3 is increased to 19.2 dB above P1dB. Results show that the improvement in OIP3 comes without lowering gain, return loss or P1dB and without causing any stability problems

Passive and active components development for broadband applications

Recently, GaN HEMTs have been proven to have numerous physical properties, resulting in transistors with greatly increased power densities when compared to the other well-established FET technologies. This advancement spurred research and product development towards power-band applications that require both high power and high efficiency over the wide band. Even though the use of multiple narrow band PAs covering the whole band has invariably led to better performance in terms of efficiency and noise, there is an associated increase in cost and in the insertion loss of the switches used to toggle between the different operating bands. The goal, now, of the new technology is to replace the multiple narrow band PAs with one broadband PA that has a comparable efficiency performance. In our study here, we have investigated a variety of wide band power amplifiers, including class AB PAs and their implementation in distributed and feedback PAs.Additionally, our investigation has included switching-mode PAs as they are well-known for achieving a relatively high efficiency. Besides having a higher efficiency, they are also less susceptible to parameter variations and could impose a lower thermal stress on the transistors than the conventional-mode PAs. With GaN HEMTs, we have demonstrated: a higher than 37 dBm output power and a more than 30% drain efficiency over 0.02 to 3 GHz for the distributed power amplifier; a higher than 30 dBm output power with more than a 22% drain efficiency over 0.1 to 5 GHz for the feedback amplifier; and at least a 43 dBm output power with a higher than 63% drain efficiency over 0.05 to 0.55 GHz for the class D PA. In many communication applications, however, achieving both high efficiency and linearity in the PA design is required. Therefore, in our research, we have evaluated several linearization and efficiency enhancement techniques.We selected the LInear amplification with Nonlinear Components (LINC) approach. Highly efficient combiner and novel efficiency enhancement techniques like the power recycling combiner and adaptive bias LINC schemes have been successfully developed and verified to achieve a combined high efficiency with a relatively high linearity

Energy efficient radio frequency system design for mobile WiMax applications. Modelling, optimisation and measurement of radio frequency power amplifier covering WiMax bandwidth based on the combination of class AB, class B, and C operations.

In today´s digital world, information and communication technology accounts for 3% and 2% of the global power consumption and CO2 emissions respectively. This alarming figure is on an upward trend, as future telecommunications systems and handsets will become even more power hungry since new services with higher bandwidth requirements emerge as part of the so called ¿future internet¿ paradigm. In addition, the mobile handset industry is tightly coupled to the consumer need for more sophisticated handsets with greater battery lifetime. If we cannot make any significant step to reducing the energy gap between the power hungry requirements of future handsets, and what battery technology can deliver, then market penetration for 4G handsets can be at risk. Therefore, energy conservation must be a design objective at the forefront of any system design from the network layer, to the physical and the microelectronic counterparts. In fact, the energy distribution of a handset device is dominated by the energy consumption of the RF hardware, and in particular the power amplifier design. Power amplifier design is a traditional topic that addresses the design challenge of how to obtain a trade-off between linearity and efficiency in order to avoid the introduction of signal distortion, whilst making best use of the available power resources for amplification. However, the present work goes beyond this by investigating a new line of amplifiers that address the green initiatives, namely green power amplifiers. This research work explores how to use the Doherty technique to promote efficiency enhancement and thus energy saving. Five different topologies of RF power amplifiers have been designed with custom-made signal splitters. The design core of the Doherty technique is based on the combination of a class B, class AB and a class C power amplifier working in synergy; which includes 90-degree 2-way power splitter at the input, quarter wavelength transformer at the output, and a new output power combiner. The frequency range for the amplifiers was designed to operate in the 3.4 - 3.6 GHz frequency band of Europe mobile WiMAX. The experimental results show that 30dBm output power can be achieved with 67% power added efficiency (PAE) for the user terminal, and 45dBm with 66% power added efficiency (PAE) for base stations which marks a 14% and 11% respective improvement over current stateof- the-art, while meeting the power output requirements for mobile WiMAX applications