Reconfigurable time interval measurement circuit incorporating a programmable gain time difference amplifier

PhD ThesisAs further advances are made in semiconductor manufacturing technology the performance of circuits is continuously increasing. Unfortunately, as the technology node descends deeper into the nanometre region, achieving the potential performance gain is becoming more of a challenge; due not only to the effects of process variation but also to the reduced timing margins between signals within the circuit creating timing problems. Production Standard Automatic Test Equipment (ATE) is incapable of performing internal timing measurements due, first to the lack of accessibility and second to the overall timing accuracy of the tester which is grossly inadequate. To address these issue ‘on-chip’ time measurement circuits have been developed in a similar way that built in self-test (BIST) evolved for ‘on-chip’ logic testing. This thesis describes the design and analysis of three time amplifier circuits. The analysis undertaken considers the operational aspects related to gain and input dynamic range, together with the robustness of the circuits to the effects of process, voltage and temperature (PVT) variations. The design which had the best overall performance was subsequently compared to a benchmark design, which used the ‘buffer delay offset’ technique for time amplification, and showed a marked 6.5 times improvement on the dynamic range extending this from 40 ps to 300ps. The new design was also more robust to the effects of PVT variations. The new time amplifier design was further developed to include an adjustable gain capability which could be varied in steps of approximately 7.5 from 4 to 117. The time amplifier was then connected to a 32-stage tapped delay line to create a reconfigurable time measurement circuit with an adjustable resolution range from 15 down to 0.5 ps and a dynamic range from 480 down to 16 ps depending upon the gain setting. The overall footprint of the measurement circuit, together with its calibration module occupies an area of 0.026 mm2 The final circuit, overall, satisfied the main design criteria for ‘on-chip’ time measurement circuitry, namely, it has a wide dynamic range, high resolution, robust to the effects of PVT and has a small area overhead.Umm Al-Qura University

Design and debugging of multi-step analog to digital converters

With the fast advancement of CMOS fabrication technology, more and more signal-processing functions are implemented in the digital domain for a lower cost, lower power consumption, higher yield, and higher re-configurability. The trend of increasing integration level for integrated circuits has forced the A/D converter interface to reside on the same silicon in complex mixed-signal ICs containing mostly digital blocks for DSP and control. However, specifications of the converters in various applications emphasize high dynamic range and low spurious spectral performance. It is nontrivial to achieve this level of linearity in a monolithic environment where post-fabrication component trimming or calibration is cumbersome to implement for certain applications or/and for cost and manufacturability reasons. Additionally, as CMOS integrated circuits are accomplishing unprecedented integration levels, potential problems associated with device scaling – the short-channel effects – are also looming large as technology strides into the deep-submicron regime. The A/D conversion process involves sampling the applied analog input signal and quantizing it to its digital representation by comparing it to reference voltages before further signal processing in subsequent digital systems. Depending on how these functions are combined, different A/D converter architectures can be implemented with different requirements on each function. Practical realizations show the trend that to a first order, converter power is directly proportional to sampling rate. However, power dissipation required becomes nonlinear as the speed capabilities of a process technology are pushed to the limit. Pipeline and two-step/multi-step converters tend to be the most efficient at achieving a given resolution and sampling rate specification. This thesis is in a sense unique work as it covers the whole spectrum of design, test, debugging and calibration of multi-step A/D converters; it incorporates development of circuit techniques and algorithms to enhance the resolution and attainable sample rate of an A/D converter and to enhance testing and debugging potential to detect errors dynamically, to isolate and confine faults, and to recover and compensate for the errors continuously. The power proficiency for high resolution of multi-step converter by combining parallelism and calibration and exploiting low-voltage circuit techniques is demonstrated with a 1.8 V, 12-bit, 80 MS/s, 100 mW analog to-digital converter fabricated in five-metal layers 0.18-µm CMOS process. Lower power supply voltages significantly reduce noise margins and increase variations in process, device and design parameters. Consequently, it is steadily more difficult to control the fabrication process precisely enough to maintain uniformity. Microscopic particles present in the manufacturing environment and slight variations in the parameters of manufacturing steps can all lead to the geometrical and electrical properties of an IC to deviate from those generated at the end of the design process. Those defects can cause various types of malfunctioning, depending on the IC topology and the nature of the defect. To relive the burden placed on IC design and manufacturing originated with ever-increasing costs associated with testing and debugging of complex mixed-signal electronic systems, several circuit techniques and algorithms are developed and incorporated in proposed ATPG, DfT and BIST methodologies. Process variation cannot be solved by improving manufacturing tolerances; variability must be reduced by new device technology or managed by design in order for scaling to continue. Similarly, within-die performance variation also imposes new challenges for test methods. With the use of dedicated sensors, which exploit knowledge of the circuit structure and the specific defect mechanisms, the method described in this thesis facilitates early and fast identification of excessive process parameter variation effects. The expectation-maximization algorithm makes the estimation problem more tractable and also yields good estimates of the parameters for small sample sizes. To allow the test guidance with the information obtained through monitoring process variations implemented adjusted support vector machine classifier simultaneously minimize the empirical classification error and maximize the geometric margin. On a positive note, the use of digital enhancing calibration techniques reduces the need for expensive technologies with special fabrication steps. Indeed, the extra cost of digital processing is normally affordable as the use of submicron mixed signal technologies allows for efficient usage of silicon area even for relatively complex algorithms. Employed adaptive filtering algorithm for error estimation offers the small number of operations per iteration and does not require correlation function calculation nor matrix inversions. The presented foreground calibration algorithm does not need any dedicated test signal and does not require a part of the conversion time. It works continuously and with every signal applied to the A/D converter. The feasibility of the method for on-line and off-line debugging and calibration has been verified by experimental measurements from the silicon prototype fabricated in standard single poly, six metal 0.09-µm CMOS process

High-speed Time-interleaved Digital-to-Analog Converter (TI-DAC) for Self-Interference Cancellation Applications

Nowadays, the need for higher data-rate is constantly growing to enhance the quality of the daily communication services. The full-duplex (FD) communication is exemplary method doubling the data-rate compared to half-duplex one. However, part of the strong output signal of the transmitter interferes to the receiver-side because they share the same antenna with limited attenuation and, as a result, the receiver’s performance is corrupted. Hence, it is critical to remove the leakage signal from the receiver’s path by designing another block called self-interference cancellation (SIC). The main goal of this dissertation is to develop the SIC block embedded in the current-mode FD receivers. To this end, the regenerated cancellation current signal is fed to the inputs of the base-band filter and after the mixer of a (direct-conversion) current-mode FD receiver. Since the pattern of the transmitter (the digital signal generated by DSP) is known, a high-speed digital-to-Analog converter (DAC) with medium-resolution can perfectly suppress main part of the leakage on the receiver path. A capacitive DAC (CDAC) is chosen among the available solutions because it is compatible with advanced CMOS technology for high-speed application and the medium-resolution designs. Although the main application of the design is to perform the cancellation, it can also be employed as a stand-alone DAC in the Analog (I/Q) transmitter. The SIC circuitry includes a trans-impedance amplifier (TIA), two DACs, high-speed digital circuits, and built-in-self-test section (BIST). According to the available specification for full-duplex communication system, the resolution and working frequency of the CDAC are calculated (designed) equal to 10-bit (3 binary+ 2 binary + 5 thermometric) and 1GHz, respectively. In order to relax the design of the TIA (settling time of the DAC), the CDAC implements using 2-way time-interleaved (TI) manner (the effective SIC frequency equals 2GHz) without using any calibration technique. The CDAC is also developed with the split-capacitor technique to lower the negative effects of the conventional binary-weighted DAC. By adding one extra capacitor on the left-side of the split-capacitor, LSB-side, the value of the split-capacitor can be chosen as an integer value of the unit capacitor. As a result, it largely enhances the linearity of the CADC and cancellation performance. If the block works as a stand-alone DAC with non-TI mode, the digital input code representing a Sinus waveform with an amplitude 1dB less than full-scale and output frequency around 10.74MHz, chosen by coherent sampling rule, then the ENOB, SINAD, SFDR, and output signal are 9.4-bit, 58.2 dB, 68.4dBc, and -9dBV. The simulated value of the |DNL| (static linearity) is also less than 0.7. The similar simulation was done in the SIC mode while the capacitive-array woks in the TI mode and cancellation current is set to the full-scale. Hence, the amount of cancelling the SI signal at the output of the TIA, SNDR, SFDR, SNDRequ. equals 51.3dB, 15.1 dB, 24dBc, 66.4 dB. The designed SIC cannot work as a closed-loop design. The layout was optimally drawn in order to minimize non-linearity, the power-consumption of the decoders, and reduce the complexity of the DAC. By distributing the thermometric cells across the array and using symmetrical switching scheme, the DAC is less subjected to the linear and gradient effect of the oxide. Based on the post-layout simulation results, the deviation of the design after drawing the layout is studied. To compare the results of the schematic and post-layout designs, the exact conditions of simulation above (schematic simulations) are used. When the block works as a stand-alone CDAC, the ENOB, SINAD, SFDR are 8.5-bit, 52.6 dB, 61.3 dBc. The simulated value of the |DNL| (static linearity) is also limited to 1.3. Likewise, the SI signal at the output of the TIA, SNDR, SFDR, SNDRequ. are equal to 44dB, 11.7 dB, 19 dBc, 55.7 dB

Performance-Driven Energy-Efficient VLSI.

Today, there are two prevalent platforms in VLSI systems: high-performance and ultra-low power. High-speed designs, usually operating at GHz level, provide the required computation abilities to systems but also consume a large amount of power; microprocessors and signal processing units are examples of this type of designs. For ultra-low power designs, voltage scaling methods are usually used to reduce power consumption and extend battery life. However, circuit delay in ultra-low power designs increases exponentially, as voltage is scaled below Vth, and subthreshold leakage energy also increases in a near-exponential fashion. Many methods have been proposed to address key design challenges on these two platforms, energy consumption in high-performance designs, and performance/reliability in ultra-low power designs. In this thesis, charge-recovery design is explored as a solution targeting both platforms to achieve increased energy efficiency over conventional CMOS designs without compromising performance or reliability. To improve performance while still achieving high energy efficiency for ultra-low power designs, we propose Subthreshold Boost Logic (SBL), a new circuit family that relies on charge-recovery design techniques to achieve order-of-magnitude improvements in operating frequencies, and achieve high energy efficiency compared to conventional subthreshold designs. To demonstrate the performance and energy efficiency of SBL, we present a 14-tap 8-bit finite-impulse response (FIR) filter test-chip fabricated in a 0.13µm process. With a single 0.27V supply, the test-chip achieves its most energy efficient operating point at 20MHz, consuming 15.57pJ per cycle with a recovery rate of 89% and a FoM equal to 17.37 nW/Tap/MHz/InBit/CoeffBit. To reduce energy consumption at multi-GHz level frequencies, we explore the application of resonant-clocking to the design of a 5-bit non-interleaved resonant-clock ash ADC with a sampling rate of 7GS/s. The ADC has been designed in a 65nm bulk CMOS process. An integrated 0.77nH inductor is used to resonate the entire clock distribution network to achieve energy efficient operation. Operating at 5.5GHz, the ADC consumes 28mW, yielding 396fJ per conversion step. The clock network accounts for 10.7% of total power and consumes 54% less energy over CV^2. By comparison, in a typical ash ADC design, 30% of total power is clock-related.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/89779/1/wsma_1.pd

Optical frequency transfer via telecommunication fiber links for metrological applications

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Electronics for Sensors

The aim of this Special Issue is to explore new advanced solutions in electronic systems and interfaces to be employed in sensors, describing best practices, implementations, and applications. The selected papers in particular concern photomultiplier tubes (PMTs) and silicon photomultipliers (SiPMs) interfaces and applications, techniques for monitoring radiation levels, electronics for biomedical applications, design and applications of time-to-digital converters, interfaces for image sensors, and general-purpose theory and topologies for electronic interfaces

Investigations on Imaging Properties of Inorganic Scintillation Screens under Irradiation with High Energetic Heavy Ions

This work represents the investigations in imagine properties of inorganic scintillation screens as diagnostic elements in heavy ion accelerator facilities, that were performed at GSI Helmholtz Centre for Heavy Ion Research (Darmstadt, Germany) and TU Darmstadt. The screen materials can be classified in groups of phosphor screens (P43 and P46 phosphor), single crystals (cerium-doped Y3Al5O12) and polycrystalline aluminum oxides (pure and chromium-doped Al2O3). Out of these groups, a selection of seven screens were irradiated by five different projectiles (proton, nitrogen, nickel, xenon and uranium), that were extracted from SIS18 in fast (1 μs) and slow (300-400 ms) extraction mode at a specific energy of E_spec = 300 MeV/u. The number of irradiating particles per pulse was varied between 10^7 and 2*10^10 ppp and the scintillation response was recorded by a complex optical system. The records served on the one hand for investigations in the two-dimensional response to the irradiating beam, namely the light output L, the light yield Y and the characteristics of the beam profiles in horizontal and vertical direction. On the other hand the wavelength spectrum of the scintillation was recorded for investigations in variations of the material structure. A data analysis was performed based on a dedicated Python script. Additionally three conventional methods (UV/Vis transmission spectroscopy, X-Ray diffraction, Raman fluorescence spectroscopy) were performed after the beam times for investigations in the material structure. Nevertheless, neither structural variations nor material defects, induced by the ion irradiation, were proven within the accuracy range of the used instrumentation and the given ion fluences. Besides the irradiation under varying beam intensity, radiation hardness tests with fast and slow extracted Nickel pulses at 2*10^9 ppp and a specific energy around E_spec = 300 MeV/u were performed and the scintillation record was used to examine the material stability under long time application. Here, the light yield Y of the targets was nearly constant or decreased only in the range of 10-15 %, relative to the initial value. For the targets with single crystal characteristic (P46, YAG:Ce), Y even increased slightly and than saturated, offering an enhanced mobility of charge carriers under irradiation. The emission spectra were reproduced continuously and the beam profiles showed good accordance to the reference methods. Within all performed beam times, the targets offered a great stability. Non-linear characteristics, e.g. due to quenching during irradiation at high beam intensities, were not observed. The light yield Y showed a decreasing tendency as function of calculated electronic energy loss dE/dx. The characteristics of the calculated beam profiles, as well as the recorded emission spectra did not change significantly. So a material degradation in the investigated materials was not verified. This observation is confirmed by the performed material characterization measurements. The need of target replacement, e.g. due to damage, did not occur and was thus not performed during the complete investigations. As material for future beam diagnostics of FAIR cerium-doped Y3Al5O12 single crystal with a thickness in the range of 300 μm is recommended in cross-points between different storage sections, due to the stable imaging properties for high energy ion beams, even under long-time irradiation. For beam alignment to experimental and research areas, common Al2O3:Cr is recommended due to the cost advantage

Experimental Studies of Highly Charged Ions in a Penning Trap for the Measurement of Electron Magnetic Moments by Double-Resonance Spectroscopy

A precise measurement of bound-electron g factors in highly charged ions provides stringent tests for state-of-the-art theoretical calculations, such as relativistic electron-correlation, bound-state QED, and higher-order Zeeman effects. We excite the fine-structure transition of boronlike argon (40Ar13+) with laser radiation and probe microwave transitions between Zeeman sub-levels in the magnetic field of a Penning trap. From this laser-microwave double-resonance technique the g factor can be determined on a ppb level of accuracy in our apparatus. We have built a novel ’half-open’ Penning trap with high fluorescence-detection efficiency and an integrated electron-beam ion source for production of highly charged ions from gas, injected through a cryogenic valve. In the future, heavier ions shall be captured from the HITRAP facility at GSI and the method shall be applied to hyperfine-structure transitions of hydrogenlike bismuth (209Bi82+) in order to measure electronic and nuclear magnetic moments. This thesis presents experimental developments as well as production, cooling, transport, and long-term storage of highly charged argon ions

MANAGING AND LEVERAGING VARIATIONS AND NOISE IN NANOMETER CMOS

Advanced CMOS technologies have enabled high density designs at the cost of complex fabrication process. Variation in oxide thickness and Random Dopant Fluctuation (RDF) lead to variation in transistor threshold voltage Vth. Current photo-lithography process used for printing decreasing critical dimensions result in variation in transistor channel length and width. A related challenge in nanometer CMOS is that of on-chip random noise. With decreasing threshold voltage and operating voltage; and increasing operating temperature, CMOS devices are more sensitive to random on-chip noise in advanced technologies. In this thesis, we explore novel circuit techniques to manage the impact of process variation in nanometer CMOS technologies. We also analyze the impact of on-chip noise on CMOS circuits and propose techniques to leverage or manage impact of noise based on the application. True Random Number Generator (TRNG) is an interesting cryptographic primitive that leverages on-chip noise to generate random bits; however, it is highly sensitive to process variation. We explore novel metastability circuits to alleviate the impact of variations and at the same time leverage on-chip noise sources like Random Thermal Noise and Random Telegraph Noise (RTN) to generate high quality random bits. We develop stochastic models for metastability based TRNG circuits to analyze the impact of variation and noise. The stochastic models are used to analyze and compare low power, energy efficient and lightweight post-processing techniques targeted to low power applications like System on Chip (SoC) and RFID. We also propose variation aware circuit calibration techniques to increase reliability. We extended this technique to a more generic application of designing Post-Si Tunable (PST) clock buffers to increase parametric yield in the presence of process variation. Apart from one time variation due to fabrication process, transistors undergo constant change in threshold voltage due to aging/wear-out effects and RTN. Process variation affects conventional sensors and introduces inaccuracies during measurement. We present a lightweight wear-out sensor that is tolerant to process variation and provides a fine grained wear-out sensing. A similar circuit is designed to sense fluctuation in transistor threshold voltage due to RTN. Although thermal noise and RTN are leveraged in applications like TRNG, they affect the stability of sensitive circuits like Static Random Access Memory (SRAM). We analyze the impact of on-chip noise on Bit Error Rate (BER) and post-Si test coverage of SRAM cells