Compact Millimeter-Wave Bandpass Filters Using Quasi-Lumped Elements in 0.13-um (Bi)-CMOS Technology for 5G Wireless Systems

© 2019 IEEE.A design methodology for a compact millimeter-wave on-chip bandpass filter (BPF) is presented in this paper. Unlike the previously published works in the literature, the presented method is based on quasi-lumped elements, which consists of a resonator with enhanced self-coupling and metal-insulator-metal capacitors. Thus, this approach provides inherently compact designs comparing with the conventional distributed elements-based ones. To fully understand the insight of the approach, simplified LC-equivalent circuit models are developed. To further demonstrate the feasibility of using this approach in practice, the resonator and two compact BPFs are designed using the presented models. All three designs are fabricated in a standard 0.13- \mu \text{m} (Bi)-CMOS technology. The measured results show that the resonator can generate a notch at 47 GHz with the attenuation better than 28 dB due to the enhanced self-coupling. The chip size, excluding the pads, is only 0.096 \times 0.294 mm 2. In addition, using the resonator for BPF designs, the first BPF has one transmission zero at 58 GHz with a peak attenuation of 23 dB. The center frequency of this filter is 27 GHz with an insertion loss of 2.5 dB, while the return loss is better than 10 dB from 26 to 31 GHz. The second BPF has two transmission zeros, and a minimum insertion loss of 3.5 dB is found at 29 GHz, while the return loss is better than 10 dB from 26 GHz to 34 GHz. Also, more than 20-dB stopband attenuation is achieved from dc to 20.5 GHz and from 48 to 67 GHz. The chip sizes of these two BPFs, excluding the pads, are only 0.076\times 0.296 mm 2 and 0.096\times 0.296 mm 2, respectively.Peer reviewe

Thermal Kinetic Inductance Detectors for Millimeter-Wave Astrophysics

Thermal Kinetic Inductance Detectors (TKIDs) combine the excellent noise performance of traditional bolometers with a radio frequency (RF) multiplexing architecture that enables the large detector counts needed for the next generation of millimeter-wave instruments. Here we present dark prototype TKID pixels that demonstrate a noise equivalent power NEP = 2×10⁻¹⁷√W/Hz with a 1/f knee at 0.1 Hz, suitable for background-limited noise performance at 150 GHz from a ground-based site. We discuss the optimizations in the device design and fabrication techniques to realize optimal electrical performance and high quality factors at a bath temperature of 250 mK

Millimeter-Wave Diode-Grid Frequency Doubler

Monolithic diode grid were fabricated on 2-cm^2 gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5% and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 Ω, the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage

Millimeter-wave active bandpass filters

Abstract: An exhaustive review of millimeter-wave (mm-wave) active bandpass filters (BPFs) is presented in this article. The details of various design approaches and realization techniques for the implementation of active BPFs are provided. The strengths, weaknesses, and design challenges of active BPFs are discussed. The available process technologies are investigated for the development of mm-wave filters. Active BPFs exhibit the merits of low loss, good outof- band rejection, good selectivity, and a high integration level. By applying loss compensation techniques, active BPFs are realized with low losses. The aim of this paper is to motivate research and development of high performance mm-wave BPFs, especially above the 60 GHz frequency band

Millimeter-wave diode-grid phase shifters

Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected with a liquid-crystal technique, and the bad diodes are removed with an ultrasonic probe. A small-aperture reflectometer that uses wavefront division interference was developed to measure the reflection coefficient of the grids. A Phase shift of 70° with a 7-dB loss was obtained at 93 GHz when the bias on the diode grid was changed from -3 V to 1 V. A simple transmission-line grid model, together with the measured low-frequency parameters for the diodes, was shown to predict the measured performance over the entire capacitive bias range of the diodes, as well as over the complete reactive tuning range provided by a reflector behind the grid, and over a wide range of frequencies form 33 GHz to 141 GHz. This shows that the transmission-line model and the measured low-frequency diode parameters can be used to design an electronic beam-steering array and to predict its performance. An electronic beam-steering array made of a pair of grids using state-of-the-art diodes with 5-Ω series resistances would have a loss of 1.4 dB at 90 GHz

BiCMOS Millimetre-wave low-noise amplifier

Abstract: Please refer to full text to view abstract.D.Phil. (Electrical and Electronic Engineering

Integrated Silicon Microwave and Millimeterwave Passive Components and Functions

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