Cancellation of crosstalk-induced jitter

A novel jitter equalization circuit is presented that addresses crosstalk-induced jitter in high-speed serial links. A simple model of electromagnetic coupling demonstrates the generation of crosstalk-induced jitter. The analysis highlights unique aspects of crosstalk-induced jitter that differ from far-end crosstalk. The model is used to predict the crosstalk-induced jitter in 2-PAM and 4-PAM, which is compared to measurement. Furthermore, the model suggests an equalizer that compensates for the data-induced electromagnetic coupling between adjacent links and is suitable for pre- or post-emphasis schemes. The circuits are implemented using 130-nm MOSFETs and operate at 5-10 Gb/s. The results demonstrate reduced deterministic jitter and lower bit-error rate (BER). At 10 Gb/s, the crosstalk-induced jitter equalizer opens the eye at 10^sup-12 BER from 17 to 45 ps and lowers the rms jitter from 8.7 to 6.3 ps

차세대 HBM 용 고집적, 저전력 송수신기 설계

학위논문 (박사) -- 서울대학교 대학원 : 공과대학 전기·정보공학부, 2020. 8. 정덕균.This thesis presents design techniques for high-density power-efficient transceiver for the next-generation high bandwidth memory (HBM). Unlike the other memory interfaces, HBM uses a 3D-stacked package using through-silicon via (TSV) and a silicon interposer. The transceiver for HBM should be able to solve the problems caused by the 3D-stacked package and TSV. At first, a data (DQ) receiver for HBM with a self-tracking loop that tracks a phase skew between DQ and data strobe (DQS) due to a voltage or thermal drift is proposed. The self-tracking loop achieves low power and small area by uti-lizing an analog-assisted baud-rate phase detector. The proposed pulse-to-charge (PC) phase detector (PD) converts the phase skew to a voltage differ-ence and detects the phase skew from the voltage difference. An offset calibra-tion scheme that can compensates for a mismatch of the PD is also proposed. The proposed calibration scheme operates without any additional sensing cir-cuits by taking advantage of the write training of HBM. Fabricated in 65 nm CMOS, the DQ receiver shows a power efficiency of 370 fJ/b at 4.8 Gb/s and occupies 0.0056 mm2. The experimental results show that the DQ receiver op-erates without any performance degradation under a ± 10% supply variation. In a second prototype IC, a high-density transceiver for HBM with a feed-forward-equalizer (FFE)-combined crosstalk (XT) cancellation scheme is pre-sented. To compensate for the XT, the transmitter pre-distorts the amplitude of the FFE output according to the XT. Since the proposed XT cancellation (XTC) scheme reuses the FFE implemented to equalize the channel loss, additional circuits for the XTC is minimized. Thanks to the XTC scheme, a channel pitch can be significantly reduced, allowing for the high channel density. Moreover, the 3D-staggered channel structure removes the ground layer between the verti-cally adjacent channels, which further reduces a cross-sectional area of the channel per lane. The test chip including 6 data lanes is fabricated in 65 nm CMOS technology. The 6-mm channels are implemented on chip to emulate the silicon interposer between the HBM and the processor. The operation of the XTC scheme is verified by simultaneously transmitting 4-Gb/s data to the 6 consecutive channels with 0.5-um pitch and the XTC scheme reduces the XT-induced jitter up to 78 %. The measurement result shows that the transceiver achieves the throughput of 8 Gb/s/um. The transceiver occupies 0.05 mm2 for 6 lanes and consumes 36.6 mW at 6 x 4 Gb/s.본 논문에서는 차세대 HBM을 위한 고집적 저전력 송수신기 설계 방법을 제안한다. 첫 번째로, 전압 및 온도 변화에 의한 데이터와 클럭 간 위상 차이를 보상할 수 있는 자체 추적 루프를 가진 데이터 수신기를 제안한다. 제안하는 자체 추적 루프는 데이터 전송 속도와 같은 속도로 동작하는 위상 검출기를 사용하여 전력 소모와 면적을 줄였다. 또한 메모리의 쓰기 훈련 (write training) 과정을 이용하여 효과적으로 위상 검출기의 오프셋을 보상할 수 있는 방법을 제안한다. 제안하는 데이터 수신기는 65 nm 공정으로 제작되어 4.8 Gb/s에서 370 fJ/b을 소모하였다. 또한 10 % 의 전압 변화에 대하여 안정적으로 동작하는 것을 확인하였다. 두 번째로, 피드 포워드 이퀄라이저와 결합된 크로스 토크 보상 방식을 활용한 고집적 송수신기를 제안한다. 제안하는 송신기는 크로스 토크 크기에 해당하는 만큼 송신기 출력을 왜곡하여 크로스 토크를 보상한다. 제안하는 크로스 토크 보상 방식은 채널 손실을 보상하기 위해 구현된 피드 포워드 이퀄라이저를 재활용함으로써 추가적인 회로를 최소화한다. 제안하는 송수신기는 크로스 토크가 보상 가능하기 때문에, 채널 간격을 크게 줄여 고집적 통신을 구현하였다. 또한 집적도를 더 증가시키기 위해 세로로 인접한 채널 사이의 차폐 층을 제거한 적층 채널 구조를 제안한다. 6개의 송수신기를 포함한 프로토타입 칩은 65 nm 공정으로 제작되었다. HBM과 프로세서 사이의 silicon interposer channel 을 모사하기 위한 6 mm 의 채널이 칩 위에 구현되었다. 제안하는 크로스 토크 보상 방식은 0.5 um 간격의 6개의 인접한 채널에 동시에 데이터를 전송하여 검증되었으며, 크로스 토크로 인한 지터를 최대 78 % 감소시켰다. 제안하는 송수신기는 8 Gb/s/um 의 처리량을 가지며 6 개의 송수신기가 총 36.6 mW의 전력을 소모하였다.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 4 CHAPTER 2 BACKGROUND ON HIGH-BANDWIDTH MEMORY 6 2.1 OVERVIEW 6 2.2 TRANSCEIVER ARCHITECTURE 10 2.3 READ/WRITE OPERATION 15 2.3.1 READ OPERATION 15 2.3.2 WRITE OPERATION 19 CHAPTER 3 BACKGROUNDS ON COUPLED WIRES 21 3.1 GENERALIZED MODEL 21 3.2 EFFECT OF CROSSTALK 26 CHAPTER 4 DQ RECEIVER WITH BAUD-RATE SELF-TRACKING LOOP 29 4.1 OVERVIEW 29 4.2 FEATURES OF DQ RECEIVER FOR HBM 33 4.3 PROPOSED PULSE-TO-CHARGE PHASE DETECTOR 35 4.3.1 OPERATION OF PULSE-TO-CHARGE PHASE DETECTOR 35 4.3.2 OFFSET CALIBRATION 37 4.3.3 OPERATION SEQUENCE 39 4.4 CIRCUIT IMPLEMENTATION 42 4.5 MEASUREMENT RESULT 46 CHAPTER 5 HIGH-DENSITY TRANSCEIVER FOR HBM WITH 3D-STAGGERED CHANNEL AND CROSSTALK CANCELLATION SCHEME 57 5.1 OVERVIEW 57 5.2 PROPOSED 3D-STAGGERED CHANNEL 61 5.2.1 IMPLEMENTATION OF 3D-STAGGERED CHANNEL 61 5.2.2 CHANNEL CHARACTERISTICS AND MODELING 66 5.3 PROPOSED FEED-FORWARD-EQUALIZER-COMBINED CROSSTALK CANCELLATION SCHEME 72 5.4 CIRCUIT IMPLEMENTATION 77 5.4.1 OVERALL ARCHITECTURE 77 5.4.2 TRANSMITTER WITH FFE-COMBINED XTC 79 5.4.3 RECEIVER 81 5.5 MEASUREMENT RESULT 82 CHAPTER 6 CONCLUSION 93 BIBLIOGRAPHY 95 초 록 102Docto

High-speed equalization and transmission in electrical interconnections

The relentless growth of data traffic and increasing digital signal processing capabilities of integrated circuits (IC) are demanding ever faster chip-to-chip / chip-to-module serial electrical interconnects. As data rates increase, the signal quality after transmission over printed circuit board (PCB) interconnections is severely impaired. Frequency-dependent loss and crosstalk noise lead to a reduced eye opening, a reduced signal-to-noise ratio and an increased inter-symbol interference (ISI). This, in turn, requires the use of improved signal processing or PCB materials, in order to overcome the bandwidth (BW) limitations and to improve signal integrity. By applying an optimal combination of equalizer and receiver electronics together with BW-efficient modulation schemes, the transmission rate over serial electrical interconnections can be pushed further. At the start of this research, most industrial backplane connectors, meeting the IEEE and OIF specifications such as manufactured by e.g. FCI or TE connectivity, had operational capabilities of up to 25 Gb/s. This research was mainly performed under the IWT ShortTrack project. The goal of this research was to increase the transmission speed over electrical backplanes up to 100 Gb/s per channel for next-generation telecom systems and data centers. This requirement greatly surpassed the state-ofthe-art reported in previous publications, considering e.g. 25 Gb/s duobinary and 42.8 Gb/s PAM-4 transmission over a low-loss Megtron 6 electrical backplane using off-line processing. The successful implementation of the integrated transmitter (TX) and receiver (RX) (1) , clearly shows the feasibility of single lane interconnections beyond 80 Gb/s and opens the potential of realizing industrial 100 Gb/s links using a recent IC technology process. Besides the advancement of the state-of-the-art in the field of high-speed transceivers and backplane transmission systems, which led to several academic publications, the output of this work also attracts a lot of attention from the industry, showing the potential to commercialize the developed chipset and technologies used in this research for various applications: not only in high-speed electrical transmission links, but also in high-speed opto-electronic communications such as access, active optical cables and optical backplanes. In this dissertation, the background of this research, an overview of this work and the thesis organization are illustrated in Chapter 1. In Chapter 2, a system level analysis is presented, showing that the channel losses are limiting the transmission speed over backplanes. In order to enhance the serial data rate over backplanes and to eliminate the signal degradation, several technologies are discussed, such as signal equalization and modulation techniques. First, a prototype backplane channel, from project partner FCI, implemented with improved backplane connectors is characterized. Second, an integrated transversal filter as a feed-forward equalizer (FFE) is selected to perform the signal equalization, based on a comprehensive consideration of the backplane channel performance, equalization capabilities, implementation complexity and overall power consumption. NRZ, duobinary and PAM-4 are the three most common modulation schemes for ultra-high speed electrical backplane communication. After a system-level simulation and comparison, the duobinary format is selected due to its high BW efficiency and reasonable circuit complexity. Last, different IC technology processes are compared and the ST microelectronics BiCMOS9MW process (featuring a fT value of over 200 GHz) is selected, based on a trade-off between speed and chip cost. Meanwhile it also has a benefit for providing an integrated microstrip model, which is utilized for the delay elements of the FFE. Chapter 3 illustrates the chip design of the high-speed backplane TX, consisting of a multiplexer (MUX) and a 5-tap FFE. The 4:1 MUX combines four lower rate streams into a high-speed differential NRZ signal up to 100 Gb/s as the FFE input. The 5-tap FFE is implemented with a novel topology for improved testability, such that the FFE performance can be individually characterized, in both frequency- and time-domain, which also helps to perform the coefficient optimization of the FFE. Different configurations for the gain cell in the FFE are compared. The gilbert configuration shows most advantages, in both a good high-frequency performance and an easy way to implement positive / negative amplification. The total chip, including the MUX and the FFE, consumes 750mW from a 2.5V supply and occupies an area of 4.4mm × 1.4 mm. In Chapter 4, the TX chip is demonstrated up to 84 Gb/s. First, the FFE performance is characterized in the frequency domain, showing that the FFE is able to work up to 84 Gb/s using duobinary formats. Second, the combination of the MUX and the FFE is tested. The equalized TX outputs are captured after different channels, for both NRZ and duobinary signaling at speeds from 64 Gb/s to 84 Gb/s. Then, by applying the duobinary RX 2, a serial electrical transmission link is demonstrated across a pair of 10 cm coax cables and across a 5 cm FX-2 differential stripline. The 5-tap FFE compensates a total loss between the TX and the RX chips of about 13.5 dB at the Nyquist frequency, while the RX receives the equalized signal and decodes the duobinary signal to 4 quarter rate NRZ streams. This shows a chip-to-chip data link with a bit error rate (BER) lower than 10−11. Last, the electrical data transmission between the TX and the RX over two commercial backplanes is demonstrated. An error-free, serial duobinary transmission across a commercial Megtron 6, 11.5 inch backplane is demonstrated at 48 Gb/s, which indicates that duobinary outperforms NRZ for attaining higher speed or longer reach backplane applications. Later on, using an ExaMAX® backplane demonstrator, duobinary transmission performance is verified and the maximum allowed channel loss at 40 Gb/s transmission is explored. The eye diagram and BER measurements over a backplane channel up to 26.25 inch are performed. The results show that at 40 Gb/s, a total channel loss up to 37 dB at the Nyquist frequency allows for error-free duobinary transmission, while a total channel loss of 42 dB was overcome with a BER below 10−8. An overview of the conclusions is summarized in Chapter 5, along with some suggestions for further research in this field. (1) The duobinary receiver was developed by my colleague Timothy De Keulenaer, as described in his PhD dissertation. (2) Described in the PhD dissertation of Timothy De Keulenaer

Hybrid NRZ/Multi-Tone Signaling for High-Speed Low-Power Wireline Transceivers

Over the past few decades, incessant growth of Internet networking traffic and High-Performance Computing (HPC) has led to a tremendous demand for data bandwidth. Digital communication technologies combined with advanced integrated circuit scaling trends have enabled the semiconductor and microelectronic industry to dramatically scale the bandwidth of high-loss interfaces such as Ethernet, backplane, and Digital Subscriber Line (DSL). The key to achieving higher bandwidth is to employ equalization technique to compensate the channel impairments such as Inter-Symbol Interference (ISI), crosstalk, and environmental noise. Therefore, todayâs advanced input/outputs (I/Os) has been equipped with sophisticated equalization techniques to push beyond the uncompensated bandwidth of the system. To this end, process scaling has continually increased the data processing capability and improved the I/O performance over the last 15 years. However, since the channel bandwidth has not scaled with the same pace, the required signal processing and equalization circuitry becomes more and more complicated. Thereby, the energy efficiency improvements are largely offset by the energy needed to compensate channel impairments. In this design paradigm, re-thinking about the design strategies in order to not only satisfy the bandwidth performance, but also to improve power-performance becomes an important necessity. It is well known in communication theory that coding and signaling schemes have the potential to provide superior performance over band-limited channels. However, the choice of the optimum data communication algorithm should be considered by accounting for the circuit level power-performance trade-offs. In this thesis we have investigated the application of new algorithm and signaling schemes in wireline communications, especially for communication between microprocessors, memories, and peripherals. A new hybrid NRZ/Multi-Tone (NRZ/MT) signaling method has been developed during the course of this research. The system-level and circuit-level analysis, design, and implementation of the proposed signaling method has been performed in the frame of this work, and the silicon measurement results have proved the efficiency and the robustness of the proposed signaling methodology for wireline interfaces. In the first part of this work, a 7.5 Gb/s hybrid NRZ/MT transceiver (TRX) for multi-drop bus (MDB) memory interfaces is designed and fabricated in 40 nm CMOS technology. Reducing the complexity of the equalization circuitry on the receiver (RX) side, the proposed architecture achieves 1 pJ/bit link efficiency for a MDB channel bearing 45 dB loss at 2.5 GHz. The measurement results of the first prototype confirm that NRZ/MT serial data TRX can offer an energy-efficient solution for MDB memory interfaces. Motivated by the satisfying results of the first prototype, in the second phase of this research we have exploited the properties of multi-tone signaling, especially orthogonality among different sub-bands, to reduce the effect of crosstalk in high-dense wireline interconnects. A four-channel transceiver has been implemented in a standard CMOS 40 nm technology in order to demonstrate the performance of NRZ/MT signaling in presence of high channel loss and strong crosstalk noise. The proposed system achieves 1 pJ/bit power efficiency, while communicating over a MDB memory channel at 36 Gb/s aggregate data rate

Energy-Efficient Receiver Design for High-Speed Interconnects

High-speed interconnects are of vital importance to the operation of high-performance computing and communication systems, determining the ultimate bandwidth or data rates at which the information can be exchanged. Optical interconnects and the employment of high-order modulation formats are considered as the solutions to fulfilling the envisioned speed and power efficiency of future interconnects. One common key factor in bringing the success is the availability of energy-efficient receivers with superior sensitivity. To enhance the receiver sensitivity, improvement in the signal-to-noise ratio (SNR) of the front-end circuits, or equalization that mitigates the detrimental inter-symbol interference (ISI) is required. In this dissertation, architectural and circuit-level energy-efficient techniques serving these goals are presented. First, an avalanche photodetector (APD)-based optical receiver is described, which utilizes non-return-to-zero (NRZ) modulation and is applicable to burst-mode operation. For the purposes of improving the overall optical link energy efficiency as well as the link bandwidth, this optical receiver is designed to achieve high sensitivity and high reconfiguration speed. The high sensitivity is enabled by optimizing the SNR at the front-end through adjusting the APD responsivity via its reverse bias voltage, along with the incorporation of 2-tap feedforward equalization (FFE) and 2-tap decision feedback equalization (DFE) implemented in current-integrating fashion. The high reconfiguration speed is empowered by the proposed integrating dc and amplitude comparators, which eliminate the RC settling time constraints. The receiver circuits, excluding the APD die, are fabricated in 28-nm CMOS technology. The optical receiver achieves bit-error-rate (BER) better than 1E−12 at −16-dBm optical modulation amplitude (OMA), 2.24-ns reconfiguration time with 5-dB dynamic range, and 1.37-pJ/b energy efficiency at 25 Gb/s. Second, a 4-level pulse amplitude modulation (PAM4) wireline receiver is described, which incorporates continuous time linear equalizers (CTLEs) and a 2-tap direct DFE dedicated to the compensation for the first and second post-cursor ISI. The direct DFE in a PAM4 receiver (PAM4-DFE) is made possible by the proposed CMOS track-and-regenerate slicer. This proposed slicer offers rail-to-rail digital feedback signals with significantly improved clock-to-Q delay performance. The reduced slicer delay relaxes the settling time constraint of the summer circuits and allows the stringent DFE timing constraint to be satisfied. With the availability of a direct DFE employing the proposed slicer, inductor-based bandwidth enhancement and loop-unrolling techniques, which can be power/area intensive, are not required. Fabricated in 28-nm CMOS technology, the PAM4 receiver achieves BER better than 1E−12 and 1.1-pJ/b energy efficiency at 60 Gb/s, measured over a channel with 8.2-dB loss at Nyquist frequency. Third, digital neural-network-enhanced FFEs (NN-FFEs) for PAM4 analog-to-digital converter (ADC)-based optical interconnects are described. The proposed NN-FFEs employ a custom learnable piecewise linear (PWL) activation function to tackle the nonlinearities with short memory lengths. In contrast to the conventional Volterra equalizers where multipliers are utilized to generate the nonlinear terms, the proposed NN-FFEs leverage the custom PWL activation function for nonlinear operations and reduce the required number of multipliers, thereby improving the area and power efficiencies. Applications in the optical interconnects based on micro-ring modulators (MRMs) are demonstrated with simulation results of 50-Gb/s and 100-Gb/s links adopting PAM4 signaling. The proposed NN-FFEs and the conventional Volterra equalizers are synthesized with the standard-cell libraries in a commercial 28-nm CMOS technology, and their power consumptions and performance are compared. Better than 37% lower power overhead can be achieved by employing the proposed NN-FFEs, in comparison with the Volterra equalizer that leads to similar improvement in the symbol-error-rate (SER) performance.</p

Transmetteurs photoniques sur silicium pour les transmissions optiques à grande capacité

Les applications exigeant des très nombreuses données (médias sociaux, diffusion vidéo en continu, mégadonnées, etc.) se développent à un rythme rapide, ce qui nécessite de plus en plus de liaisons optiques ultra-rapides. Ceci implique le développment des transmetteurs optiques intégrés et à bas coût et plus particulirement en photonique sur silicium en raison de ses avantages par rapport aux autres technologies (LiNbO3 et InP), tel que la compatibilité avec le procédé de fabrication CMOS. Les modulateurs optoélectronique sont un élément essentiel dans la communication op-tique. Beaucoup de travaux de recherche sont consacrées au développement de dispositifs optiques haut débit efficaces. Cependant, la conception de modulateurs en photonique sur sili-cium (SiP) haut débit est diffcile, principalement en raison de l'absence d'effet électro-optique intrinsèque dans le silicium. De nouvelles approches et de architectures plus performances doivent être développées afin de satisfaire aux critères réliés au système d'une liaison optique aux paramètres de conception au niveau du dispositif integré. En outre, la co-conception de circuits integrés photoniques sur silicium et CMOS est cruciale pour atteindre tout le potentiel de la technologie de photonique sur silicium. Ainsi cette thèse aborde les défits susmentionnés. Dans notre première contribution, nous préesentons pour la première fois un émetteur phononique sur silicium PAM-4 sans utiliser un convertisseur numérique analog (DAC)qui comprend un modulateur Mach Zehnder à électrodes segmentées SiP (LES-MZM) implémenté dans un procédé photonique sur silicium générique avec jonction PN latérale et son conducteur CMOS intégré. Des débits allant jusqu'à 38 Gb/s/chnnel sont obtenus sans utili-ser un convertisseur numérique-analogique externe. Nous présentons également une nouvelle procédure de génération de délai dans le excitateur de MOS complémentaire. Un effet, un délai robuste aussi petit que 7 ps est généré entre les canaux de conduite. Dans notre deuxième contribution, nous présentons pour la première fois un nouveau fac-teur de mérite (FDM) pour les modulateurs SiP qui inclut non seulement la perte optique et l'efficacité (comme les FDMs précédents), mais aussi la bande passante électro-optique du modulateur SiP (BWEO). Ce nouveau FDM peut faire correspondre les paramètres de conception physique du modulateur SiP à ses critères de performance au niveau du système, facilitant à la fois la conception du dispositif optique et l'optimisation du système. Pour la première fois nous définissons et utilisons la pénalité de puissance du modulateur (MPP) induite par le modulateur SiP pour étudier la dégradation des performances au niveau du système induite par le modulateur SiP dans une communication à base de modulation d'amplitude d'impulsion optique. Nous avons développé l'équation pour MPP qui inclut les facteurs de limitation du modulateur (perte optique, taux d'extinction limité et limitation de la bande passante électro-optique). Enfin, dans notre troisième contribution, une nouvelle méthodologie de conception pour les modulateurs en SiP intégré à haute débit est présentée. La nouvelle approche est basée sur la minimisation de la MPP SiP en optimisant l'architecture du modulateur et le point de fonctionnement. Pour ce processus, une conception en longueur unitaire du modulateur Mach Zehnder (MZM) peut être optimisée en suivant les spécifications du procédé de fabrication et les règles de conception. Cependant, la longueur et la tension de biais du d'éphaseur doivent être optimisées ensemble (par exemple selon vitesse de transmission et format de modulation). Pour vérifier l'approche d'optimisation proposée expérimentale mont, a conçu un modulateur photonique sur silicium en phase / quadrature de phase (IQ) ciblant le format de modulation 16-QAM à 60 Gigabaud. Les résultats expérimentaux prouvent la fiabilité de la méthodologie proposée. D'ailleurs, nous avons augmenté la vitesse de transmission jusqu'à 70 Gigabaud pour tester la limite de débit au système. Une transmission de données dos à dos avec des débits binaires de plus de 233 Gigabit/s/channel est observée. Cette méthodologie de conception ouvre ainsi la voie à la conception de la prochaine génération d'émetteurs intégrés à double polarisation 400+ Gigabit/s/channel.Data-hungry applications (social media, video streaming, big data, etc.) are expanding at a fast pace, growing demand for ultra-fast optical links. This driving force reveals need for low-cost, integrated optical transmitters and pushes research in silicon photonics because of its advantages over other platforms (i.e. LiNbO3 and InP), such as compatibility with CMOS fabrication processes, the ability of on-chip polarization manipulation, and cost effciency. Electro-optic modulators are an essential component of optical communication links and immense research is dedicated to developing effcient high-bitrate devices. However, the design of high-capacity Silicon Photonics (SiP) transmitters is challenging, mainly due to lack of inherent electro-optic effect in silicon. New design methodologies and performance merits have to be developed in order to map the system-level criteria of an optical link to the design parameters in device-level. In addition, co-design of silicon photonics and CMOS integrated circuits is crucial to reveal the full potential of silicon photonics. This thesis addresses the aforementioned challenges. In our frst contribution, for the frst time we present a DAC-less PAM-4 silicon photonic transmitter that includes a SiP lumped-element segmented-electrode Mach Zehnder modula-tor (LES-MZM) implemented in a generic silicon photonic process with lateral p-n junction and its co-designed CMOS driver. Using post processing, bitrates up to 38 Gb/s/channel are achieved without using an external digital to analog converter. We also presents a novel delay generation procedure in the CMOS driver. A robust delay as small as 7 ps is generated between the driving channels. In our second contribution, for the frst time we present a new figure of merit (FOM) for SiP modulators that includes not only the optical loss and effciency (like the prior FOMs), but also the SiP modulator electro-optic bandwidth ( BWEO). This new FOM can map SiP modulator physical design parameters to its system-level performance criteria, facilitating both device design and system optimization. For the frst time we define and employ the modulator power penalty (MPP) induced by the SiP modulator to study the system level performance degradation induced by SiP modulator in an optical pulse amplitude modulation link. We develope a closed-form equation for MPP that includes the SiP modulator limiting factors (optical loss, limited extinction ratio and electro-optic bandwidth limitation). Finally in our third contribution, we present a novel design methodology for integrated high capacity SiP modulators. The new approach is based on minimizing the power penalty of a SiP modulator (MPP) by optimizing modulator design and bias point. For the given process, a unit-length design of Mach Zehnder modulator (MZM) can be optimized following the process specifications and design rules. However, the length and the bias voltage of the phase shifter must be optimized together in a system context (e.g., baud rate and modulation format). Moreover, to verify the proposed optimization approach in experiment, we design an in-phase/quadrature-phase (IQ) silicon photonic modulator targeting 16-QAM modulation format at 60 Gbaud. Experimental results proves the reliability of our proposed methodology. We further push the baud rate up to 70 Gbaud to examine the capacity boundary of the device. Back to back data transmission with bitrates more than 233 Gb/s/channel are captured. This design methodology paves the way for designing the next generation of integrated dual- polarization 400+ Gb/s/channel transmitters

Design of High-Speed SerDes Transceiver for Chip-to-Chip Communications in CMOS Process

With the continuous increase of on-chip computation capacities and exponential growth of data-intensive applications, the high-speed data transmission through serial links has become the backbone for modern communication systems. To satisfy the massive data-exchanging requirement, the data rate of such serial links has been updated from several Gb/s to tens of Gb/s. Currently, the commercial standards such as Ethernet 400GbE, InfiniBand high data rate (HDR), and common electrical interface (CEI)-56G has been developing towards 40+ Gb/s. As the core component within these links, the transceiver chipset plays a fundamental role in balancing the operation speed, power consumption, area occupation, and operation range. Meanwhile, the CMOS process has become the dominant technology in modern transceiver chip fabrications due to its large-scale digital integration capability and aggressive pricing advantage. This research aims to explore advanced techniques that are capable of exploiting the maximum operation speed of the CMOS process, and hence provides potential solutions for 40+ Gb/s CMOS transceiver designs. The major contributions are summarized as follows. A low jitter ring-oscillator-based injection-locked clock multiplier (RILCM) with a hybrid frequency tracking loop that consists of a traditional phase-locked loop (PLL), a timing-adjusted loop, and a loop selection state-machine is implemented in 65-nm C-MOS process. In the ring voltage-controlled oscillator, a full-swing pseudo-differential delay cell is proposed to lower the device noise to phase noise conversion. To obtain high operation speed and high detection accuracy, a compact timing-adjusted phase detector tightly combined with a well-matched charge pump is designed. Meanwhile, a lock-loss detection and lock recovery is devised to endow the RILCM with a similar lock-acquisition ability as conventional PLL, thus excluding the initial frequency set- I up aid and preventing the potential lock-loss risk. The experimental results show that the figure-of-merit of the designed RILCM reaches -247.3 dB, which is better than previous RILCMs and even comparable to the large-area LC-ILCMs. The transmitter (TX) and receiver (RX) chips are separately designed and fab- ricated in 65-nm CMOS process. The transmitter chip employs a quarter-rate multi-multiplexer (MUX)-based 4-tap feed-forward equalizer (FFE) to pre-distort the output. To increase the maximum operating speed, a bandwidth-enhanced 4:1 MUX with the capability of eliminating charge-sharing effect is proposed. To produce the quarter-rate parallel data streams with appropriate delays, a compact latch array associated with an interleaved-retiming technique is designed. The receiver chip employs a two-stage continuous-time linear equalizer (CTLE) as the analog front-end and integrates an improved clock data recovery to extract the sampling clocks and retime the incoming data. To automatically balance the jitter tracking and jitter suppression, passive low-pass filters with adaptively-adjusted bandwidth are introduced into the data-sampling path. To optimize the linearity of the phase interpolation, a time-averaging-based compensating phase interpolator is proposed. For equalization, a combined TX-FFE and RX-CTLE is applied to compensate for the channel loss, where a low-cost edge-data correlation-based sign zero-forcing adaptation algorithm is proposed to automatically adjust the TX-FFE’s tap weights. Measurement results show that the fabricated transmitter/receiver chipset can deliver 40 Gb/s random data at a bit error rate of 16 dB loss at the half-baud frequency, while consuming a total power of 370 mW

Analysis and Design of High Speed Serial Interfaces for Automotive Applications

The demand for an enriched end-user experience and increased performance in next generation electronic applications is never ending, and it is a common trend for a wide spectrum of applications owing to different markets, like computing, mobile communication and automotive. For this reason High Speed Serial Interface have become widespread components for nowadays electronics with a constant demand for power reduction and data rate increase. In the frame of gigabit serial systems, the work discussed in this thesis develops in two directions: on one hand, the aim is to support the continuous data rate increase with the development of novel link modeling approaches that will be employed for system level evaluation and as support in the design and characterization phases. On the other hand, the design considerations and challenges in the implementation of the transmitter, one of the most delicate blocks for the signal integrity performance of the link, are central. The first part of the activity regarding link performance predictions lead to the development of an enhanced statistical simulation approach, capable to account for the transmitter waveform shape in the ISI analysis, a characteristic that is missed by the available state-ofthe- art simulation approaches. The proposed approach has been extensively tested by comparison with traditional simulation approaches (Spice-like simulators) and validated against experimental characterization of a test system, with satisfactory results. The second part of the activity consists in the design of a high speed transmitter in a deeply scaled CMOS technology, spanning from the concept of the circuit, its implementation and characterization. Targets of the design are to achieve a data rate of 5 Gb/s with a minimum voltage swing of 800 mV, thus doubling the data rate of the current transmitter implementation, and reduce the power dissipation adopting a voltage mode architecture. The experimental characterization of the fabricated lot draws a twofold picture, with some of the performance figures showing a very good qualitative and quantitative agreement with pre-silicon simulations, and others revealing a poor performance level, especially for the eye diagram. Investigation of the root causes by the analysis of the physical silicon design, of the bonding scheme of the prototypes and of the pre-silicon simulations is reported. Guidelines for the redesign of the circuit are also given.Nel panorama delle applicazioni elettroniche il miglioramento delle performance di un prodotto da una generazione alla successiva ha lo scopo di offrire all\u2019utilizzatore finale nuove funzioni e migliorare quelle esistenti. Negli ultimi anni grazie al costante avanzamento della tecnologia integrata, si \ue8 assistito ad un enorme sviluppo della capacit\ue0 computazionale dei dispositivi in tutti i segmenti di mercato, quali ad esempio l\u2019information technology, la comunicazione mobile e l\u2019automotive. La conseguente necessit\ue0 di mettere in comunicazione dispostivi diversi all\u2019interno della stessa applicazione e di traferire grosse quantit\ue0 di dati ha provocato una capillare diffusione delle interfacce seriali ad alta velocit\ue0, o High Speed Serial Interfaces (HSSIs). La necessit\ue0 di ridurre il consumo di potenza e aumentare il bit rate per questo tipo di applicazioni \ue8 diventata dunque un ambito di ricerca di estremo interesse. Il lavoro discusso in questa tesi si colloca nell\u2019ambito della trasmissione di dati seriali a bit rate superiori ad 1Gb/s e si sviluppa in due direzioni: da un lato, a sostegno del continuo aumento del bit rate nelle nuove generazioni di interfacce, \ue8 stato affrontato lo sviluppo di nuovi approcci di modellazione del sistema, che possano essere impiegati nella valutazione delle prestazioni dell\u2019interfaccia e a supporto delle fasi di progettazione e di caratterizzazione. Dall\u2019altro lato, si \ue8 focalizzata l\u2019attenzione sulle sfide e sulle problematiche inerenti il progetto di uno dei blocchi pi\uf9 delicati per le prestazioni del sistema, il trasmettitore. La prima parte della tesi ha come oggetto lo sviluppo di un approccio di simulazione statistico innovativo, in grado di includere nell\u2019analisi degli effetti dell\u2019interferenza di intersimbolo anche la forma d\u2019onda prodotta all\u2019uscita del trasmettitore, una caratteristica che non \ue8 presente in altri approcci di simulazione proposti in letteratura. La tecnica proposta \ue8 ampiamente testata mediante il confronto con approcci di simulazione tradizionali (di tipo Spice) e mediante il confronto con la caratterizzazione sperimentale di un sistema di test, con risultati pienamente soddisfacenti. La seconda parte dell\u2019attivit\ue0 riguarda il progetto di un trasmettitore integrato high speed in tecnologia CMOS a 40nm e si estende dallo studio di fattibilit\ue0 del circuito fino alla sua realizzazione e caratterizzazione. Gli obiettivi riguardano il raggiungimento di un bit rate pari a 5 Gb/s, raddoppiando cos\uec il bit rate dell\u2019attuale implementazione, e di una tensione differenziale di uscita minima di 800mV (picco-picco) riducendo allo stesso tempo la potenza dissipata mediante l\u2019adozione di una architettura Voltage Mode. I risultati sperimentali ottenuti dal primo lotto fabbricato non delineano un quadro univoco: alcune performance mostrano un ottimo accordo qualitativo e quantitativo con le simulazioni pre-fabbricazione, mentre prestazioni non soddisfacenti sono state ottenute in particolare per il diagramma ad occhio. Grazie all\u2019analisi del layout del prototipo, del bonding tra silicio e package e delle simulazioni pre-fabbricazione \ue8 stato possibile risalire ai fattori responsabili del degrado delle prestazioni rispetto alla previsioni pre-fabbricazione, permettendo inoltre di delineare le linee guida da seguire nella futura progettazione di un nuovo prototipo

통계적 주파수 검출기 기반 기준 주파수를 사용하지 않는 클록 및 데이터 복원 회로의 설계 방법론

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022. 8. 정덕균.In this thesis, a design of a high-speed, power-efficient, wide-range clock and data recovery (CDR) without a reference clock is proposed. A frequency acquisition scheme using a stochastic frequency detector (SFD) based on the Alexander phase detector (PD) is utilized for the referenceless operation. Pat-tern histogram analysis is presented to analyze the frequency acquisition behavior of the SFD and verified by simulation. Based on the information obtained by pattern histogram analysis, SFD using autocovariance is proposed. With a direct-proportional path and a digital integral path, the proposed referenceless CDR achieves frequency lock at all measurable conditions, and the measured frequency acquisition time is within 7μs. The prototype chip has been fabricated in a 40-nm CMOS process and occupies an active area of 0.032 mm2. The proposed referenceless CDR achieves the BER of less than 10-12 at 32 Gb/s and exhibits an energy efficiency of 1.15 pJ/b at 32 Gb/s with a 1.0 V supply.본 논문은 기준 클럭이 없는 고속, 저전력, 광대역으로 동작하는 클럭 및 데이터 복원회로의 설계를 제안한다. 기준 클럭이 없는 동작을 위해서 알렉산더 위상 검출기에 기반한 통계적 주파수 검출기를 사용하는 주파수 획득 방식이 사용된다. 통계적 주파수 검출기의 주파수 추적 양상을 분석하기 위해 패턴 히스토그램 분석 방법론을 제시하였고 시뮬레이션을 통해 검증하였다. 패턴 히스토그램 분석을 통해 얻은 정보를 바탕으로 자기공분산을 이용한 통계적 주파수 검출기를 제안한다. 직접 비례 경로와 디지털 적분 경로를 통해 제안된 기준 클럭이 없는 클럭 및 데이터 복원회로는 모든 측정 가능한 조건에서 주파수 잠금을 달성하는 데 성공하였고, 모든 경우에서 측정된 주파수 추적 시간은 7μs 이내이다. 40-nm CMOS 공정을 이용하여 만들어진 칩은 0.032 mm2의 면적을 차지한다. 제안하는 클럭 및 데이터 복원회로는 32 Gb/s의 속도에서 비트에러율 10-12 이하로 동작하였고, 에너지 효율은 32Gb/s의 속도에서 1.0V 공급전압을 사용하여 1.15 pJ/b을 달성하였다.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 13 CHAPTER 2 BACKGROUNDS 14 2.1 CLOCKING ARCHITECTURES IN SERIAL LINK INTERFACE 14 2.2 GENERAL CONSIDERATIONS FOR CLOCK AND DATA RECOVERY 24 2.2.1 OVERVIEW 24 2.2.2 JITTER 26 2.2.3 CDR JITTER CHARACTERISTICS 33 2.3 CDR ARCHITECTURES 39 2.3.1 PLL-BASED CDR – WITH EXTERNAL REFERENCE CLOCK 39 2.3.2 DLL/PI-BASED CDR 44 2.3.3 PLL-BASED CDR – WITHOUT EXTERNAL REFERENCE CLOCK 47 2.4 FREQUENCY ACQUISITION SCHEME 50 2.4.1 TYPICAL FREQUENCY DETECTORS 50 2.4.1.1 DIGITAL QUADRICORRELATOR FREQUENCY DETECTOR 50 2.4.1.2 ROTATIONAL FREQUENCY DETECTOR 54 2.4.2 PRIOR WORKS 56 CHAPTER 3 DESIGN OF THE REFERENCELESS CDR USING SFD 58 3.1 OVERVIEW 58 3.2 PROPOSED FREQUENCY DETECTOR 62 3.2.1 MOTIVATION 62 3.2.2 PATTERN HISTOGRAM ANALYSIS 68 3.2.3 INTRODUCTION OF AUTOCOVARIANCE TO STOCHASTIC FREQUENCY DETECTOR 75 3.3 CIRCUIT IMPLEMENTATION 83 3.3.1 IMPLEMENTATION OF THE PROPOSED REFERENCELESS CDR 83 3.3.2 CONTINUOUS-TIME LINEAR EQUALIZER (CTLE) 85 3.3.3 DIGITALLY-CONTROLLED OSCILLATOR (DCO) 87 3.4 MEASUREMENT RESULTS 89 CHAPTER 4 CONCLUSION 99 APPENDIX A DETAILED FREQUENCY ACQUISITION WAVEFORMS OF THE PROPOSED SFD 100 BIBLIOGRAPHY 108 초 록 122박

Analysis and design on low-power multi-Gb/s serial links

High speed serial links are critical components for addressing the growing demand for I/O bandwidth in next-generation computing applications, such as many-core systems, backplane and optical data communications. Due to continued process scaling and circuit innovations, today's CMOS serial link transceivers can achieve tens of Gb/s per pin. However, most of their reported power efficiency improves much slower than the rise of data rate. Therefore, aggregate I/O power is increasing and will exceed the power budget if the trend for more off-chip bandwidth is sustained. In this work, a system level statistical analysis of serial links is first described, and compares the link performance of Non-Return-to-Zero (2-PAM) with higher-order modulation (duobinary) signaling schemes. This method enables fast and accurate BER distribution simulation of serial link transceivers that include channel and circuit imperfections, such as finite pulse rise/fall time, duty cycle variation, and both receiver and transmitter forwarded-clock jitter. Second, in order to address link power efficiency, two test chips have been implemented. The first one describes a quad-lane, 6.4-7.2 Gb/s serial link receiver prototype using a forwarded clock architecture. A novel phase deskew scheme using injection-locked ring oscillators (ILRO) is proposed that achieves greater than one UI of phase shift for multiple clock phases, eliminating phase rotation and interpolation required in conventional architectures. Each receiver, optimized for power efficiency, consists of a low-power linear equalizer, four offset-cancelled quantizers for 1:4 demultiplexing, and an injection-locked ring oscillator coupled to a low-voltage swing, global clock distribution. Measurement results show a 6.4-7.2Gb/s data rate with BER < 10⁻¹² across 14 cm of PCB, and an 8Gb/s data rate through 4cm of PCB. Designed in a 1.2V, 90nm CMOS process, the ILRO achieves a wide tuning range from 1.6-2.6GHz. The total area of each receiver is 0.0174mm², resulting in a measured power efficiency of 0.6mW/Gb/s. Improving upon the first test chip, a second test chip for 8Gb/s forwarded clock serial link receivers exploits a low-power super-harmonic injection-locked ring oscillator for symmetric multi-phase local clock generation and deskewing. Further power reduction is achieved by designing most of the receiver circuits in the near-threshold region (0.6V supply), with the exception of only the global clock buffer, test buffers and synthesized digital test circuits at nominal 1V supply. At the architectural level, a 1:10 direct demultiplexing rate is chosen to achieve low supply operation by exploiting high-parallelism. Fabricated in 65nm CMOS technology, two receiver prototypes are integrated in this test chip, one without and the other with front-end boot-strapped S/Hs. Including the amortized power of global clock distribution, the proposed serial link receivers consume 1.3mW and 2mW respectively at 8Gb/s input data rate, achieving a power efficiency of 0.163mW/Gb/s and 0.25mW/Gb/s. Measurement results show both receivers achieve BER < 10⁻¹² across a 20-cm FR4 PCB channel