A Process Variation Tolerant Self-Compensation Sense Amplifier Design

As we move under the aegis of the Moore\u27s law, we have to deal with its darker side with problems like leakage and short channel effects. Once we go beyond 45nm regime process variations also have emerged as a significant design concern.Embedded memories uses sense amplifier for fast sensing and typically, sense amplifiers uses pair of matched transistors in a positive feedback environment. A small difference in voltage level of applied input signals to these matched transistors is amplified and the resulting logic signals are latched. Intra die variation causes mismatch between the sense transistors that should ideally be identical structures. Yield loss due to device and process variations has never been so critical to cause failure in circuits. Due to growth in size of embedded SRAMs as well as usage of sense amplifier based signaling techniques, process variations in sense amplifiers leads to significant loss of yield for that we need to come up with process variation tolerant circuit styles and new devices. In this work impact of transistor mismatch due to process variations on sense amplifier is evaluated and this problem is stated. For the solution of the problem a novel self compensation scheme on sense amplifiers is presented on different technology nodes up to 32nm on conventional bulk MOSFET technology. Our results show that the self compensation technique in the conventional bulk MOSFET latch type sense amplifier not just gives improvement in the yield but also leads to improvement in performance for latch type sense amplifiers. Lithography related CD variations, fluctuations in dopant density, oxide thickness and parametric variations of devices are identified as a major challenge to the classical bulk type MOSFET. With the emerging nanoscale devices, SIA roadmap identifies FinFETs as a candidate for post-planar end-of-roadmap CMOS device. With current technology scaling issues and with conventional bulk type MOSFET on 32nm node our technique can easily be applied to Double Gate devices. In this work, we also develop the model of Double Gate MOSFET through 3D Device Simulator Damocles and TCAD simulator. We propose a FinFET based process variation tolerant sense amplifier design that exploits the back gate of FinFET devices for dynamic compensation against process variations. Results from statistical simulation show that the proposed dynamic compensation is highly effective in restoring yield at a level comparable to that of sense amplifiers without process variations. We created the 32nm double gate models generated from Damocles 3-D device simulations [25] and Taurus Device Simulator available commercially from Synopsys [47] and use them in the nominal latch type sense amplifier design and on the Independent Gate Self Compensation Sense Amplifier Design (IGSSA) to compare the yield and performance benefits of sense amplifier design on FinFET technology over the conventional bulk type CMOS based sense amplifier on 32nm technology node effective in restoring yield at a level comparable to that of sense amplifiers without process variations. We created the 32nm double gate models generated from Damocles 3-D device simulations [25] and Taurus Device Simulator available commercially from Synopsys [47] and use them in the nominal latch type sense amplifier design and on the Independent Gate Self Compensation Sense Amplifier Design (IGSSA) to compare the yield and performance benefits of sense amplifier design on FinFET technology over the conventional bulk type CMOS based sense amplifier on 32nm technology node

Demonstration of SRAM Design with LED Cube Display

There is a constant push to reduce power consumption and increase speed in transistor memory devices. The goal of this project is to improve Allegro MicroSystems’ current Static Random Access Memory technology by designing and implementing a new sense amplifier. The final design is latch based and uses positive feedback to quickly display data at the output, which stops static current flow and dramatically reduces power consumption. Additionally a three-dimensional LED structure was designed and built to display a series of letters, characters or visual effects

A low offset dynamic comparator with morphing amplifier

Dynamic comparators are popular structures used in analog circuits such as RFID tags, ADC, memory modules, etc. Compared with traditional open-loop amplifiers that can be used as a comparator, well-designed dynamic comparators are usually faster and more power-efficient, but dynamic CMPs also have some problems. Device mismatch-induced offset voltages is a major challenge when designing dynamic comparators because device mismatch is a random variable that is non-predictable during the design stage. There are many popular dynamic CMP structures; one of them is the Lewis-Gray dynamic comparator [1]. Many authors have introduced alternative dynamic comparator structures which they claim are less affected by device mismatch than the Lewis-Gray circuit but few present a comprehensive and reasonable comparison method. In those papers, different modifications are implemented in order to minimize device mismatch offset, one popular way is to add an amplifier stage before the dynamic comparator. The input signals are amplified in the first amplifier stage before going into the second dynamic comparator stage. Since the outputs of the first stage have a larger difference comparing with the inputs, the offset requirement for the dynamic comparator is loosened. However, the offset still has room for improvement. In this work, a low offset dynamic comparator with morphing amplifier is proposed. It doesn’t have two independent stages. Instead, the amp is inherently integrated into a dynamic comparator, and it yields better offset performance. Moreover, a new fair and comprehensive offset comparison method is also introduced

CMOS VLSI correlator design for radio-astronomical signal processing : a thesis presented in partial fulfilment of the requirements for the degree of Doctor of Philosophy in Engineering at Massey University, Auckland, New Zealand

Multi-element radio telescopes employ methods of indirect imaging to capture the image of the sky. These methods are in contrast to direct imaging methods whereby the image is constructed from sensor measurements directly and involve extensive signal processing on antenna signals. The Square Kilometre Array, or the SKA, is a future radio telescope of this type that, once built, will become the largest telescope in the world. The unprecedented scale of the SKA requires novel solutions to be developed for its signal processing pipeline one of the most resource-consuming parts of which is the correlator. The SKA uses the FX correlator construction that consists of two parts: the F part that translates antenna signals into frequency domain and the X part that cross-correlates these signals between each other. This research focuses on the integrated circuit design and VLSI implementation issues of the X part of a very large FX correlator in 28 nm and 130 nm CMOS. The correlator’s main processing operation is the complex multiply-accumulation (CMAC) for which custom 28 nm CMAC designs are presented and evaluated. Performance of various memories inside the correlator also affects overall efficiency, and input-buffered and output-buffered approaches are considered with the goal of improving upon it. For output-buffered designs, custom memory control circuits have been designed and prototyped in 130 nm that improve upon eDRAM by taking advantage of sequential access patterns. For the input-buffered architecture, a new scheme is proposed that decreases the usage of the input-buffer memory by a third by making use of multiple accumulators in every CMAC. Because cross-correlation is a very data-intensive process, high-performance SerDes I/O is essential to any practical ASIC implementation. On the I/O design, the 28 nm full-rate transmitter delivering 15 Gbps per lane is presented. This design consists of the scrambler, the serialiser, the digital VCO with analog fine-tuning and the SST driver including features of a 4-tap FFE, impedance tuning and amplitude tuning

Design of an Efficient Wall Adapter

This report presents a design for an efficient AC adapter that uses 85% less power than conventional adapters when idle, for an additional cost of only $1.21. The design exceeds the team\u27s initial targets of 75$1.30. The team logically derived the final polling design from three initially proposed solutions. This project addresses the inefficiencies of modern AC adapters, whose increased utilization has become an increasing detriment to both economy and environment

Integration of an electrical discharge machining module onto a reconfigurable machine tool

Electrical Discharge Machining (EDM) is a non-contact manufacturing process in which material is removed from a metal workpiece by high frequency electrical pulses produced between an electrode and the workpiece. EDM machines are usually stand-alone devices, and are quite expensive. The objective of this research was to integrate an EDM machine and an existing reconfigurable CNC machine tool, using a modular approach, to enable conventional milling and EDM to be conducted in a co-ordinated fashion on the same machine tool

Biosensors and CMOS Interface Circuits

abstract: Analysing and measuring of biological or biochemical processes are of utmost importance for medical, biological and biotechnological applications. Point of care diagnostic system, composing of biosensors, have promising applications for providing cheap, accurate and portable diagnosis. Owing to these expanding medical applications and advances made by semiconductor industry biosensors have seen a tremendous growth in the past few decades. Also emergence of microfluidics and non-invasive biosensing applications are other marker propellers. Analyzing biological signals using transducers is difficult due to the challenges in interfacing an electronic system to the biological environment. Detection limit, detection time, dynamic range, specificity to the analyte, sensitivity and reliability of these devices are some of the challenges in developing and integrating these devices. Significant amount of research in the field of biosensors has been focused on improving the design, fabrication process and their integration with microfluidics to address these challenges. This work presents new techniques, design and systems to improve the interface between the electronic system and the biological environment. This dissertation uses CMOS circuit design to improve the reliability of these devices. Also this work addresses the challenges in designing the electronic system used for processing the output of the transducer, which converts biological signal into electronic signal.Dissertation/ThesisM.S. Electrical Engineering 201

Robust low-power digital circuit design in nano-CMOS technologies

Device scaling has resulted in large scale integrated, high performance, low-power, and low cost systems. However the move towards sub-100 nm technology nodes has increased variability in device characteristics due to large process variations. Variability has severe implications on digital circuit design by causing timing uncertainties in combinational circuits, degrading yield and reliability of memory elements, and increasing power density due to slow scaling of supply voltage. Conventional design methods add large pessimistic safety margins to mitigate increased variability, however, they incur large power and performance loss as the combination of worst cases occurs very rarely. In-situ monitoring of timing failures provides an opportunity to dynamically tune safety margins in proportion to on-chip variability that can significantly minimize power and performance losses. We demonstrated by simulations two delay sensor designs to detect timing failures in advance that can be coupled with different compensation techniques such as voltage scaling, body biasing, or frequency scaling to avoid actual timing failures. Our simulation results using 45 nm and 32 nm technology BSIM4 models indicate significant reduction in total power consumption under temperature and statistical variations. Future work involves using dual sensing to avoid useless voltage scaling that incurs a speed loss. SRAM cache is the first victim of increased process variations that requires handcrafted design to meet area, power, and performance requirements. We have proposed novel 6 transistors (6T), 7 transistors (7T), and 8 transistors (8T)-SRAM cells that enable variability tolerant and low-power SRAM cache designs. Increased sense-amplifier offset voltage due to device mismatch arising from high variability increases delay and power consumption of SRAM design. We have proposed two novel design techniques to reduce offset voltage dependent delays providing a high speed low-power SRAM design. Increasing leakage currents in nano-CMOS technologies pose a major challenge to a low-power reliable design. We have investigated novel segmented supply voltage architecture to reduce leakage power of the SRAM caches since they occupy bulk of the total chip area and power. Future work involves developing leakage reduction methods for the combination logic designs including SRAM peripherals