A High Isolation Series-Shunt RF MEMS Switch

This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 μs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port

Development of a low actuation voltage RF MEMS switch

This paper reports on the design of a novel ultra low actuation voltage, low loss radio frequency micro-electro-mechanical system (RF MEMS) capacitive shunt switch. The concept of the switch relies on a mechanically unconstrained armature actuated over a coplanar waveguide using electrostatic forces. The minimum actuation voltage of the switch is <2V, with an isolation of 40dB and insertion loss <0.7dB at 78GHz

Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab

Reports on wafer-level packaged RF-MEMS switches fabricated in a commercial CMOS fab. Switch fabrication is based on a metal surface micromachining process. A novel wafer-level packaging scheme is developed, whereby the switches are housed in on-chip sealed cavities using benzocyclobutene (BCB) as the bonding and sealing material. Measurements show that the influence of the wafer-level package on the RF performance can be made very small.\ud \u

Performance Comparison of Phase Change Materials and Metal-Insulator Transition Materials for Direct Current and Radio Frequency Switching Applications

Advanced understanding of the physics makes phase change materials (PCM) and metal-insulator transition (MIT) materials great candidates for direct current (DC) and radio frequency (RF) switching applications. In the literature, germanium telluride (GeTe), a PCM, and vanadium dioxide (VO2), an MIT material have been widely investigated for DC and RF switching applications due to their remarkable contrast in their OFF/ON state resistivity values. In this review, innovations in design, fabrication, and characterization associated with these PCM and MIT material-based RF switches, have been highlighted and critically reviewed from the early stage to the most recent works. We initially report on the growth of PCM and MIT materials and then discuss their DC characteristics. Afterwards, novel design approaches and notable fabrication processes; utilized to improve switching performance; are discussed and reviewed. Finally, a brief vis-á-vis comparison of resistivity, insertion loss, isolation loss, power consumption, RF power handling capability, switching speed, and reliability is provided to compare their performance to radio frequency microelectromechanical systems (RF MEMS) switches; which helps to demonstrate the current state-of-the-art, as well as insight into their potential in future applications

Low Voltage Totally Free Flexible RF MEMS Switch With Anti-Stiction System

This paper concerns a new design of RF MEMS switch combined with an innovative process which enable low actuation voltage (<5V) and avoid stiction. First, the structure described with principal design issues, the corresponding anti-stiction system is presented and FEM simulations are done. Then, a short description of the process flow based on two non polymer sacrificial layers. Finally, RF measurements are presented and preliminary experimental protocol and results of anti-stiction validation is detailed. Resulting RF performances are -30dB of isolation and -0.45dB of insertion loss at 10 GHz.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838

Low Voltage Rf Microelectro-Mechanical Switch Using 0.35 μm MIMOS CMOS Compatible Process

Low voltage RF MEMS switch that can be integrated with other circuits is required in the consumer product, industrial and telecommunication sector. Voltage actuation less than 10 V with simple fabrication process is desirable as most of applications need low power system with low fabrication cost. Suis RF MEMS bervoltan rendah dan boleh berintegrasi dengan litar lain sangat diperlukan di dalam produk pengguna, sektor industri dan telekomunikasi. Voltan penggerak kurang daripada 10 V dengan proses fabrikasi yang mudah sangat dikehendaki kerana kebanyakan aplikasi memerlukan sistem kuasa rendah dengan kos fabrikasi yang rendah

Design and simulation of a RF MEMS shunt switch for Ka and V bands and the impact of varying its geometrical parameters

RF MEMS plays an important role in microwave switching. The high performance of RF MEMS shunt such as high bandwidth, low insertion loss, and high isolation have made these switches well suitable for high performing microwave and millimeter wave circuits. This paper presents a RF MEMS shunt capacitive switch for Ka and V band application. This paper investigates the effect of various geometrical parameters on RF characteristics of the switch. The simulation results are presented and discussed.<br /

An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications

The artificial intelligence-based MEMS switch designs have been led technology in present micro-electronic applications. The 4G and 5G communication hardware networks have working been through RF-MEMS switches. The earlier MEMS deigns are outdated in terms of functionality and compatibility, so that a realistic RF-MEMS based advanced configurations are compulsory for future electronic applications. In this research work 2 different shunt-capacitive type configurations have been implemented and those are verified on COMSOL Multi-physics toolbox as well as functionality been verified on HFSS software tool. The electromechanical properties of proposed shunt type RF-MEMS switch attained more perfection in functionality compared to past configurations. The implemented switching model has uniform meandering and derives pull-in-voltage of 18.5v along with 1.2xs switching time. The 2nd type shunt RF-MEMS model has been generated pull-in-voltage of 25.5v and isolation loss of 37.20.  The performance metrics like Length 25.34 µm, Width 28.92 µm and Thickness 34.42 µm had been improved compared to previous models. The deigned shunt-capacitive type RF-MEMS models are most prominent in operation and offering advanced microelectronics applications

An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications

The artificial intelligence-based MEMS switch designs have been led technology in present micro-electronic applications. The 4G and 5G communication hardware networks have working been through RF-MEMS switches. The earlier MEMS deigns are outdated in terms of functionality and compatibility, so that a realistic RF-MEMS based advanced configurations are compulsory for future electronic applications. In this research work 2 different shunt-capacitive type configurations have been implemented and those are verified on COMSOL Multi-physics toolbox as well as functionality been verified on HFSS software tool. The electromechanical properties of proposed shunt type RF-MEMS switch attained more perfection in functionality compared to past configurations. The implemented switching model has uniform meandering and derives pull-in-voltage of 18.5v along with 1.2xs switching time. The 2nd type shunt RF-MEMS model has been generated pull-in-voltage of 25.5v and isolation loss of 37.20.  The performance metrics like Length 25.34 µm, Width 28.92 µm and Thickness 34.42 µm had been improved compared to previous models. The deigned shunt-capacitive type RF-MEMS models are most prominent in operation and offering advanced microelectronics applications