10 research outputs found

    Improving Accuracy and Energy Efficiency of Pipeline Analog to Digital Converters

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    Analog-to-Digital converters (ADC) are key building blocks of analog and mixed-signal processing that link the natural world of analog signals and the world of digital processing. This work describes the analysis, design, development and test of novel high-resolution (≥12-bit), moderate speed (10-100MS/s), energy-efficient ADCs. Such ADCs are typically used for communication, imaging and video applications. CMOS process scaling is typically aimed at enabling fast, low-power digital circuits. Scaling leads to lower supply voltages, and to short channel devices with low gain and poor matching between small devices. On the other hand, to process and amplify analog signals analog circuits rely on wide signal swing, large transistor gain and good component matching. Hence, analog circuit performance has lagged far behind digital performance. Analog circuits such as ADCs are therefore nowadays performance bottlenecks in many electronic systems. The pipeline ADC is a popular architecture for implementing ADCs with a wide range of speed and resolution. This work aims to improve the accuracy and energy efficiency of the pipeline architecture by combining it with more accurate or more energy efficient architectures such as Sigma-Delta and Successive-Approximation (SAR). Such novel, hybrid architectures are investigated in this work. In the first design, a new architecture is developed which combines a low-OSR resetting Sigma-Delta modulator architecture with the pipeline architecture. This architecture enhances the accuracy and energy efficiency of the pipeline architecture. A prototype 14-bit 23MS/s ADC, based on this new architecture, is designed and tested. This ADC achieves calibration-free 14-bit linearity, 11.7-bit ENOB and 87dB SFDR while dissipating only 48mW of power. In the second design, new hybrid architecture based on SAR and pipeline architecture is developed. This architecture significantly improves the energy efficiency of the pipeline architecture. A prototype 12-bit 50MS/s ADC is designed based on this new architecture. “Half-gain” and “half-reference” pipeline stages are also introduced in this prototype for the first time to further reduce power dissipation. This ADC dissipates only 3.5mW power.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/76025/1/leechun_1.pd

    Linearization of Time-encoded ADCs Architectures for Smart MEMS Sensors in Low Power CMOS Technology

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    Mención Internacional en el título de doctorIn the last few years, the development of mobile technologies and machine learning applications has increased the demand of MEMS-based digital microphones. Mobile devices have several microphones enabling noise canceling, acoustic beamforming and speech recognition. With the development of machine learning applications the interest to integrate sensors with neural networks has increased. This has driven the interest to develop digital microphones in nanometer CMOS nodes where the microphone analog-front end and digital processing, potentially including neural networks, is integrated on the same chip. Traditionally, analog-to-digital converters (ADCs) in digital microphones have been implemented using high order Sigma-Delta modulators. The most common technique to implement these high order Sigma-Selta modulators is switchedcapacitor CMOS circuits. Recently, to reduce power consumption and make them more suitable for tasks that require always-on operation, such as keyword recognition, switched-capacitor circuits have been improved using inverter-based operational amplifier integrators. Alternatively, switched-capacitor based Sigma- Delta modulators have been replaced by continuous time Sigma-Delta converters. Nevertheless, in both implementations the input signal is voltage encoded across the modulator, making the integration in smaller CMOS nodes more challenging due to the reduced voltage supply. An alternative technique consists on encoding the input signal on time (or frequency) instead of voltage. This is what time-encoded converters do. Lately, time-encoding converters have gained popularity as they are more suitable to nanometer CMOS nodes than Sigma-Delta converters. Among the ones that have drawn more interest we find voltage-controlled oscillator based ADCs (VCOADCs). VCO-ADCs can be implemented using CMOS inverter based ring oscillators (RO) and digital circuitry. They also show noise-shaping properties. This makes them a very interesting alternative for implementation of ADCs in nanometer CMOS nodes. Nevertheless, two main circuit impairments are present in VCO-ADCs, and both come from the oscillator non-idealities. The first of them is the oscillator phase noise, that reduces the resolution of the ADC. The second is the non-linear tuning curve of the oscillator, that results in harmonic distortion at medium to high input amplitudes. In this thesis we analyze the use of time encoding ADCs for MEMS microphones with special focus on ring oscillator based ADCs (RO-ADCs). Firstly, we study the use of a dual-slope based SAR noise shaped quantizer (SAR-NSQ) in sigma-delta loops. This quantizer adds and extra level of noise-shaping to the modulator, improving the resolution. The quantizer is explained, and equations for the noise transfer function (NTF) of a third order sigma-delta using a second order filter and the NSQ are presented. Secondly, we move our attention to the topic of RO-ADCs. We present a high dynamic range MEMS microphone 130nm CMOS chip based on an open-loop VCO-ADC. This dissertation shows the implementation of the analog front-end that includes the oscillator and the MEMS interface, with a focus on achieving low power consumption with low noise and a high dynamic range. The digital circuitry is left to be explained by the coauthor of the chip in his dissertation. The chip achieves a 80dBA peak SNDR and 108dB dynamic range with a THD of 1.5% at 128 dBSPL with a power consumption of 438μW. After that, we analyze the use of a frequency-dependent-resistor (FDR) to implement an unsampled feedback loop around the oscillator. The objective is to reduce distortion. Additionally phase noise mitigation is achieved. A first topology including an operational amplifier to increase the loop gain is analyzed. The design is silicon proven in a 130 nm CMOS chip that achieves a 84 dBA peak SNDR with an analog power consumption of 600μW. A second topology without the operational amplifier is also analyzed. Two chips are designed with this topology. The first chip in 130 nm CMOS is a full VCO-ADC including the frequencyto- digital converter (F2D). This chip achieves a peak SNDR of 76.6 dBA with a power consumption of 482μW. The second chip includes only the oscillator and is implemented in 55nm CMOS. The peak SNDR is 78.15 dBA and the analog power consumption is 153μW. To finish this thesis, two circuits that use an FDR with a ring oscillator are presented. The first is a capacity-to-digital converter (CDC). The second is a filter made with an FDR and an oscillator intended for voice activity detection tasks (VAD).En los últimos años, el desarrollo de las tecnologías móviles y las aplicaciones de machine-learning han aumentado la demanda de micrófonos digitales basados en MEMS. Los dipositivos móviles tienen varios micrófonos que permiten la cancelación de ruido, el beamforming o conformación de haces y el reconocimiento de voz. Con el desarrollo de aplicaciones de aprendizaje automático, el interés por integrar sensores con redes neuronales ha aumentado. Esto ha impulsado el interés por desarrollar micrófonos digitales en nodos CMOS nanométricos donde el front-end analógico y el procesamiento digital del micrófono, que puede incluir redes neuronales, está integrado en el mismo chip. Tradicionalmente, los convertidores analógicos-digitales (ADC) en micrófonos digitales han sido implementados utilizando moduladores Sigma-Delta de orden elevado. La técnica más común para implementar estos moduladores Sigma- Delta es el uso de circuitos CMOS de capacidades conmutadas. Recientemente, para reducir el consumo de potencia y hacerlos más adecuados para las tareas que requieren una operación continua, como el reconocimiento de palabras clave, los convertidores Sigma-Delta de capacidades conmutadas has sido mejorados con el uso de integradores implementados con amplificadores operacionales basados en inversores CMOS. Alternativamente, los Sigma-Delta de capacidades conmutadas han sido reemplazados por moduladores en tiempo continuo. No obstante, en ambas implementaciones, la señal de entrada es codificada en voltaje durante el proceso de conversión, lo que hace que la integración en nodos CMOS más pequeños sea complicada debido a la menor tensión de alimentación. Una técnica alternativa consiste en codificar la señal de entrada en tiempo (o frecuencia) en lugar de tensión. Esto es lo que hacen los convertidores de codificación temporal. Recientemente, los convertidores de codificación temporal han ganado popularidad ya que son más adecuados para nodos CMOS nanométricos que los convertidores Sigma-Delta. Entre los que más interés han despertado encontramos los ADCs basados en osciladores controlados por tensión (VCO-ADC). Los VCO-ADC se pueden implementar usando osciladores en anillo (RO) implementados con inversores CMOS y circuitos digitales. Esta familia de convertidores también tiene conformado de ruido. Esto los convierte en una alternativa muy interesante para la implementación de convertidores en nodos CMOS nanométricos. Sin embargo, dos problemas principales están presentes en este tipo de ADCs debidos ambos a las no idealidades del oscilador. El primero de los problemas es la presencia de ruido de fase en el oscilador, lo que reduce la resolución del ADC. El segundo es la curva de conversion voltaje-frecuencia no lineal del oscilador, lo que causa distorsión a amplitudes medias y altas. En esta tesis analizamos el uso de ADCs de codificación temporal para micrófonos MEMS, con especial interés en ADCS basados en osciladores de anillo (RO-ADC). En primer lugar, estudiamos el uso de un cuantificador SAR con conformado de ruido (SAR-NSQ) en moduladores Sigma-Delta. Este cuantificador agrega un orden adicional de conformado de ruido al modulador, mejorando la resolución. En este documento se explica el cuantificador y obtienen las ecuaciones para la función de transferencia de ruido (NTF) de un sigma-delta de tercer orden usando un filtro de segundo orden y el NSQ. En segundo lugar, dirigimos nuestra atención al tema de los RO-ADC. Presentamos el chip de un micrófono MEMS de alto rango dinámico en CMOS de 130 nm basado en un VCO-ADC de bucle abierto. En esta tesis se explica la implementación del front-end analógico que incluye el oscilador y la interfaz con el MEMS. Esta implementación se ha llevado a cabo con el objetivo de lograr un bajo consumo de potencia, un bajo nivel de ruido y un alto rango dinámico. La descripción del back-end digital se deja para la tesis del couator del chip. La SNDR de pico del chip es de 80dBA y el rango dinámico de 108dB con una THD de 1,5% a 128 dBSPL y un consumo de potencia de 438μW. Finalmente, se analiza el uso de una resistencia dependiente de frecuencia (FDR) para implementar un bucle de realimentación no muestreado alrededor del oscilador. El objetivo es reducir la distorsión. Además, también se logra la mitigación del ruido de fase del oscilador. Se analyza una primera topologia de realimentación incluyendo un amplificador operacional para incrementar la ganancia de bucle. Este diseño se prueba en silicio en un chip CMOS de 130nm que logra un pico de SNDR de 84 dBA con un consumo de potencia de 600μW en la parte analógica. Seguidamente, se analiza una segunda topología sin el amplificador operacional. Se fabrican y miden dos chips diseñados con esta topologia. El primero de ellos en CMOS de 130 nm es un VCO-ADC completo que incluye el convertidor de frecuencia a digital (F2D). Este chip alcanza un pico SNDR de 76,6 dBA con un consumo de potencia de 482μW. El segundo incluye solo el oscilador y está implementado en CMOS de 55nm. El pico SNDR es 78.15 dBA y el el consumo de potencia analógica es de 153μW. Para cerrar esta tesis, se presentan dos circuitos que usan la FDR con un oscilador en anillo. El primero es un convertidor de capacidad a digital (CDC). El segundo es un filtro realizado con una FDR y un oscilador, enfocado a tareas de detección de voz (VAD).Programa de Doctorado en Ingeniería Eléctrica, Electrónica y Automática por la Universidad Carlos III de MadridPresidente: Antonio Jesús Torralba Silgado.- Secretaria: María Luisa López Vallejo.- Vocal: Pieter Rombout

    A 77.3-dB SNDR 62.5-kHz Bandwidth Continuous-Time Noise-Shaping SAR ADC With Duty-Cycled G<sub>m</sub>-C Integrator

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    This article presents a first-order continuous-time (CT) noise-shaping successive-approximation-register (NS-SAR) analog-to-digital converter (ADC). Different from other NS-SAR ADCs in literature, which are discrete-time (DT), this ADC utilizes a CT Gm-C integrator to realize an inherent anti-aliasing function. To cope with the timing conflict between the DT SAR ADC and the CT integrator, the sampling switch of the SAR ADC is removed, and the integrator is duty cycled to leave 5% of the sampling clock period for the SAR conversion. Redundancy is added to track the varying ADC input due to the absence of the sampling switch. A theoretical analysis shows that the 5% duty-cycling has negligible effects on the signal transfer function (STF) and the noise transfer function. The output swing and linearity requirements for the integrator are also relaxed thanks to the inherent feedforward path in the NS-SAR ADC architecture. Fabricated in 65-nm CMOS, the prototype achieves 77.3-dB peak signal-to-noise and distortion ratio (SNDR) in a 62.5-kHz bandwidth while consuming 13.5μ W, leading to a Schreier figure of merit (FoM) of 174.0 dB. Moreover, it provides 15-dB attenuation in the alias band.</p

    Ultra-low noise, high-frame rate readout design for a 3D-stacked CMOS image sensor

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    Due to the switch from CCD to CMOS technology, CMOS based image sensors have become smaller, cheaper, faster, and have recently outclassed CCDs in terms of image quality. Apart from the extensive set of applications requiring image sensors, the next technological breakthrough in imaging would be to consolidate and completely shift the conventional CMOS image sensor technology to the 3D-stacked technology. Stacking is recent and an innovative technology in the imaging field, allowing multiple silicon tiers with different functions to be stacked on top of each other. The technology allows for an extreme parallelism of the pixel readout circuitry. Furthermore, the readout is placed underneath the pixel array on a 3D-stacked image sensor, and the parallelism of the readout can remain constant at any spatial resolution of the sensors, allowing extreme low noise and a high-frame rate (design) at virtually any sensor array resolution. The objective of this work is the design of ultra-low noise readout circuits meant for 3D-stacked image sensors, structured with parallel readout circuitries. The readout circuit’s key requirements are low noise, speed, low-area (for higher parallelism), and low power. A CMOS imaging review is presented through a short historical background, followed by the description of the motivation, the research goals, and the work contributions. The fundamentals of CMOS image sensors are addressed, as a part of highlighting the typical image sensor features, the essential building blocks, types of operation, as well as their physical characteristics and their evaluation metrics. Following up on this, the document pays attention to the readout circuit’s noise theory and the column converters theory, to identify possible pitfalls to obtain sub-electron noise imagers. Lastly, the fabricated test CIS device performances are reported along with conjectures and conclusions, ending this thesis with the 3D-stacked subject issues and the future work. A part of the developed research work is located in the Appendices.Devido à mudança da tecnologia CCD para CMOS, os sensores de imagem em CMOS tornam se mais pequenos, mais baratos, mais rápidos, e mais recentemente, ultrapassaram os sensores CCD no que respeita à qualidade de imagem. Para além do vasto conjunto de aplicações que requerem sensores de imagem, o próximo salto tecnológico no ramo dos sensores de imagem é o de mudar completamente da tecnologia de sensores de imagem CMOS convencional para a tecnologia “3D-stacked”. O empilhamento de chips é relativamente recente e é uma tecnologia inovadora no campo dos sensores de imagem, permitindo vários planos de silício com diferentes funções poderem ser empilhados uns sobre os outros. Esta tecnologia permite portanto, um paralelismo extremo na leitura dos sinais vindos da matriz de píxeis. Além disso, num sensor de imagem de planos de silício empilhados, os circuitos de leitura estão posicionados debaixo da matriz de píxeis, sendo que dessa forma, o paralelismo pode manter-se constante para qualquer resolução espacial, permitindo assim atingir um extremo baixo ruído e um alto debito de imagens, virtualmente para qualquer resolução desejada. O objetivo deste trabalho é o de desenhar circuitos de leitura de coluna de muito baixo ruído, planeados para serem empregues em sensores de imagem “3D-stacked” com estruturas altamente paralelizadas. Os requisitos chave para os circuitos de leitura são de baixo ruído, rapidez e pouca área utilizada, de forma a obter-se o melhor rácio. Uma breve revisão histórica dos sensores de imagem CMOS é apresentada, seguida da motivação, dos objetivos e das contribuições feitas. Os fundamentos dos sensores de imagem CMOS são também abordados para expor as suas características, os blocos essenciais, os tipos de operação, assim como as suas características físicas e suas métricas de avaliação. No seguimento disto, especial atenção é dada à teoria subjacente ao ruído inerente dos circuitos de leitura e dos conversores de coluna, servindo para identificar os possíveis aspetos que dificultem atingir a tão desejada performance de muito baixo ruído. Por fim, os resultados experimentais do sensor desenvolvido são apresentados junto com possíveis conjeturas e respetivas conclusões, terminando o documento com o assunto de empilhamento vertical de camadas de silício, junto com o possível trabalho futuro

    Broadband Continuous-time MASH Sigma-Delta ADCs

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    Conversion analogique-numérique Sigma-Delta large bande appliquée à la mesure des non-linéarités des amplificateurs de puissance

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    Power amplifiers, which are essential elements of any communication system, will play a crucial role in the development of future communication systems. Today improving power amplifiers requires technological advances at the circuit device level, but one also must consider a more global approach. In particular, advances in digital processing can now correct in the early stage of the communication chain some distortions that are generated downstream in the chain. Digital pre-distortion is a correction technique for power amplifiers that has a growing interest because of its completely digital implementation and of its gains in linearity and energy consumption. This technique requires a feedback path where the analog-to-digital converter is a critical element. This component must satisfy the constraints of high resolution , wide bandwidth, and high linearity. In this thesis, we propose a new architecture of analog-to-digital converter based on bandpass Delta-Sigma modulators. This architecture takes advantage of operating bandpass modulators that are designed to work in parallel, each focusing on different frequencies, but also of a particular cascading arrangement to eliminate the useful signal, which has a high power, in order to reduce dynamics constraints. High-level design and simulations were carried out for discrete time and continuous time systems and also required the development of appropriate simulation tools.Les amplificateurs de puissance, éléments constitutifs essentiels de tout système de télécommunication, vont jouer un rôle capital dans le développement des futurs systèmes de communication. Aujourd'hui l'amélioration des amplificateurs de puissance nécessite un progrès technologique au niveau du composant lui même mais doit aussi tenir compte d'une approche plus globale. En particulier, le progrès dans les traitements numériques permet aujourd'hui de corriger en amont certaines distorsions qui seront générées en aval de la chaîne de communication. La pré-distorsion numérique est une technique de correction des amplificateurs de puissance qui connaît un intérêt grandissant de par son intégration complètement numérique et par les gains en linéarité et en consommation. Cette technique nécessite une voie de retour dont un élément critique est le convertisseur analogique-numérique. Ce composant doit répondre à des contraintes de résolution, de bande passante et de linéarité élevées. Dans cette thèse, nous proposons une nouvelle architecture de convertisseur analogique-numérique à base de modulateurs Sigma-Delta passe-bande. Cette architecture tire partie du fonctionnement passe bande des modulateurs que nous faisons travailler en parallèle, chacun centré sur différentes fréquences, mais aussi d'un agencement en cascade particulier pour éliminer le signal utile, qui est de forte puissance, dans le but de diminuer les contraintes de dynamique.La conception haut niveau et les simulations ont été menées pour des systèmes à temps discret et aussi à temps continu et a nécessité le développement d'outils adaptés de simulation se basant sur la boîte à outils Delta Sigma Toolbox de Richard Schreie
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