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    A 39-GHz Doherty-Like Power Amplifier with 22-dBm Output Power and 21% Power-Added Efficiency at 6-dB Power Back-Off

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    © 2024, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. This is the accepted manuscript version of a conference paper which has been published in final form at https://doi.org/10.1109/JETCAS.2024.3351075The design of a Doherty-like power amplifier for millimetre-wave (mm-wave) applications is presented in this work. The designed power amplifier employs a novel symmetrical loadmodulated balanced amplifier (S-LMBA) architecture. This design is advantageous in minimizing the undesired impedance interaction often encountered in the classic LMBA approach. Such interactions are typically due to the use of a non-50 Ω load at the isolation port of the output quadrature coupler. Moreover, magnitude and phase control networks are carefully designed to generate the specific magnitude and phase information for the designed S-LMBA. To demonstrate the proposed ideas, the SLMBA is fabricated in a 45-nm CMOS SOI technology. At 39 GHz, a 22.1 dBm saturated output power (Psat) with a maximum poweradded efficiency (PAE) of 25.7% is achieved. In addition, 1.68 times drain efficiency enhancement is obtained over an ideal Class-B operation, when the designed S-LMBA is operated at 6 dB power back-off. An average output power of 13.1 dBm with a PAE of 14.4% at an error vector magnitude (EVMrms) above -22.5 dB and adjacent channel power ratio (ACPR) of -23 dBc is also achieved, when a 200 MHz single carrier 64-quadratureamplitude- modulation (QAM) signal is used. Including all testing pads, the footprint of the designed S-LMBA is only 1.56 mm2.Peer reviewe

    A Full Ka-Band Power Amplifier With 32.9% PAE and 15.3-dBm Power in 65-nm CMOS

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