Design of VCOs in Deep Sub-micron Technologies

This work will present a more accurate frequency prediction model for single-ended ring oscillators (ROs), a case-study comparing different ROs, and a design method for LC voltage-controlled oscillators (LCVCOs) that uses a MATLAB script based on analytical equations to output a graphical design space showing performance characteristics as a function of design parameters. Using this method, design trade-offs become clear, and the designer can choose which performance characteristics to optimize. These methods were used to design various topologies of ring oscillators and LCVCOs in the GlobalFoundries 28 nm HPP CMOS technology, comparing the performance between different topologies based on simulation results. The results from the MATLAB design script were compared to simulation results as well to show the effectiveness of the design methods. Three varieties of 5 GHz voltage controlled ring oscillators were designed in the GlobalFoundries 28 nm HPP CMOS technology. The first is a low current low dropout regulator (LDO) tuned ring oscillator designed with thin oxide devices and a 0.85 V supply. The second is a high current LDO-tuned ring oscillator designed with medium oxide devices and a 1.5 V supply. The third is varactor-tuned ring oscillator with no LDO, and 0.85 V supply. Performance comparison of these ring oscillator systems are presented, outlining trade-offs between tuning range, phase noise, power dissipation, and area. The varactor-tuned ring oscillator exhibits 8.89 dBc/Hz (with power supply noise) and 16.27 dBc/Hz (without power supply noise) improvement in phase noise over the best-performing LDO-tuned ring oscillator. There are advantages in average power dissipation and area for a minimal tradeoff in tuning range with the varactor-tuned ring oscillator. Four multi-GHz LCVCOs were designed in the GlobalFoundries 28 nm HPP CMOS technology: 15 GHz varactor-tuned NMOS-only, 9 GHz varactor-tuned self-biased CMOS, 14.2 GHz digitally-tuned NMOS-only, and 8.2 GHz digitally-tuned self-biased CMOS. As a design method, analytical ex-pressions describing tuning range, tank amplitude constraint, and startup condition were used in MATLAB to output a graphical view of the design space for both NMOS-only and CMOS LCVCOs, with maximum varactor capacitance on the y-axis and NMOS transistor width on the x-axis. Phase noise was predicted as well. In addition to the standard varactor control voltage tuning method, digitally-tuned implementations of both NMOS and CMOS LCVCOs are presented. The performance aspects of all designed LCVCOs are compared. Both varactor-tuned and digitally-tuned NMOS LCVCOs have lower phase noise, lower power consumption, and higher tuning range than both CMOS topologies. The varactor-tuned NMOS LCVCO has the lowest phase noise of -97 dBc/Hz at 1 MHz offset from 15 GHz center frequency, FOM of -172.20 dBc/Hz, and FOMT of -167.76 dBc/Hz. The digitally-tuned CMOS LCVCO has the greatest tuning range at 10%. Phase noise is improved by 3 dBc/Hz with the digitally-tuned CMOS topology over varactor-tuned CMOS

Design of a 3 GHz fine resolution LC DCO

In this thesis, the design of a fine resolution LC digitally controlled oscillator (DCO) is introduced. Two NMOS varactor banks are used to achieve 12 bits medium and fine frequency tuning. Both delta-sigma modulator and capacitive divider circuit are implemented to achieve a finer resolution and a larger dynamic range. The LC-oscillator has a coarse tuning range from 3.05 GHz to 3.85 GHz and a fine tuning range of 50MHz. It features a phase noise level of -115dBc/Hz at 1MHz frequency offset and consumes 5.4mW. Efficient simulation methodology is explored. Finally, this DCO is simulated in an All-Digital Phase Locked Loop (ADPLL) with other ideal behavior blocks implemented using Verilog-A, and the performance of the DCO is evaluated.Electrical and Computer Engineerin

Low power digitally controlled oscillator for IoT applications

This work is focused on the design of a Low Power CMOS DCO for IEEE 802.11ah in IoT applications. The design methodology is based on the Unified current-control model (UICM), which is a physics-based model and enables an accurate all-region model of the operation of the device. Additionally, a transformer-based resonator has been used to solve the low-quality factor issue of integrated inductors. Two digitally controlled oscillators (DCO) have been implemented to show the advantages of utilizing a transformedbased resonator and the methodology based on the UICM model. These designs aim for the operation in low voltage supply (VDD) since VDD scaling is a trend in systems-onchip (SoCs), in which the circuitry is mostly digital. Despite the degradation caused by VDD scaling, new RF and analog circuits must deliver similar performance of the older CMOS nodes. The first DCO design was a low power LC-tank DCO, implemented in 40nm bulk-CMOS. The first design presented a DCO operating at 45% of the nominal VDD without compromise the performance. By reducing the VDD below the nominal value, this DCO reduces power consumption, which is a crucial feature for IoT circuits. The main contribution of this first DCO is the reduction of VDD scaling impact on the phase-noise do the DCO. The LC-based DCO operates from 1.8 to 1.86 GHz. At the maximum frequency and 0.395V VDD, the power consumption is a mere 380 W with a phase-noise of -119.3 dBc/Hz at 1 MHz. The circuit occupies an area of 0.46mm2 in 40 nm CMOS, mostly due to the inductor. The second DCO design was a low-power transformer-based DCO design, implemented in 28nm bulk-CMOS. This second design aims for the VDD reduction to below 0.3 V. Operating in a frequency range similar to the LC-based DCO, the transformer-based DCO operated with 0.280V VDD with a power consumption of 97 W. Meanwhile, the phase-noise was -101.95 dBc/Hz at 1 MHz. Even in the worst-case scenario (i.e., slow-slow and 85oC), this second DCO was able to operate at 0.330V VDD, consuming 126 W, while it keeps a similar phase-noise performance of the typical case. The core circuit occupies an area of 0.364 mm2.Este trabalho objetiva o projeto de um DCO de baixa potência em CMOS para aplicações de IoT e aderentes ao padrão IEEE 802.11ah. A metodologia de projeto é baseada no modelo de controle de corrente unificado (UICM), que é um modelo com embasamento físico que permite uma operação precisa em todas as regiões de operação do dispositivo. Adicionalmente, é utilizado um ressonador baseado em transformador visando solucionar os problemas provenientes do baixo fator de qualidade de indutores integrados. Para destacar as melhorias obtidas com o projeto do ressonador baseado em transformador e com a metodologia baseada no modelo UICM, dois projetos de DCO são realizados. Esses projetos visam a operação com baixa tensão de alimentação (VDD), uma vez que o escalonamento do VDD é uma tendência em sistemas em chip (SoCs), em que o circuito é majoritariamente digital. Independente da degradação causada pelo escalonamento de VDD, circuitos analógicos e de RF atuais devem oferecer desempenho semelhante ao alcançado em tecnologias CMOS mais antigas. O primeiro projeto foi um DCO de baixa potência com tanque LC, implementado em tecnologia bulk-CMOS de 40nm. O primeiro projeto apresentou uma operação a 45% do VDD nominal sem comprometer o desempenho. Ao reduzir o VDD abaixo do valor nominal, este DCO reduz o consumo de energia, que é uma característica crucial para circuitos IoT. A principal contribuição deste DCO é a redução do impacto do escalonamento do VDD no ruído de fase. O DCO com tanque LC opera de 1,8 a 1,86 GHz. Na frequência máxima e com VDD de apenas 0,395V, o consumo de energia é 380 W e o ruído de fase é -119,3 dBc/Hz a 1 MHz. O circuito ocupa uma área de 0.46mm2 em processo CMOS de 40 nm. O segundo projeto foi um DCO de baixa potência baseado em transformador, implementado em tecnologia bulk- CMOS de 28nm. Este projeto visa a redução de VDD abaixo de 0,3 V. Operando em uma faixa de frequência semelhante ao primeiro DCO, o DCO baseado em transformador opera com VDD de 0,280V e com consumo de potência de 97 W. O ruído de fase foi de -101,95 dBc/Hz a 1 MHz. Mesmo no pior caso de processo, este DCO opera a um VDD de 0,330V, consumindo 126 W, com o ruído de fase semelhante ao caso típico. O circuito ocupa uma área de 0.364mm2

A Bang-Bang All-Digital PLL for Frequency Synthesis

abstract: Phase locked loops are an integral part of any electronic system that requires a clock signal and find use in a broad range of applications such as clock and data recovery circuits for high speed serial I/O and frequency synthesizers for RF transceivers and ADCs. Traditionally, PLLs have been primarily analog in nature and since the development of the charge pump PLL, they have almost exclusively been analog. Recently, however, much research has been focused on ADPLLs because of their scalability, flexibility and higher noise immunity. This research investigates some of the latest all-digital PLL architectures and discusses the qualities and tradeoffs of each. A highly flexible and scalable all-digital PLL based frequency synthesizer is implemented in 180 nm CMOS process. This implementation makes use of a binary phase detector, also commonly called a bang-bang phase detector, which has potential of use in high-speed, sub-micron processes due to the simplicity of the phase detector which can be implemented with a simple D flip flop. Due to the nonlinearity introduced by the phase detector, there are certain performance limitations. This architecture incorporates a separate frequency control loop which can alleviate some of these limitations, such as lock range and acquisition time.Dissertation/ThesisM.S. Electrical Engineering 201

Noise shaping Asynchronous SAR ADC based time to digital converter

Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin

Reconfigurable time interval measurement circuit incorporating a programmable gain time difference amplifier

PhD ThesisAs further advances are made in semiconductor manufacturing technology the performance of circuits is continuously increasing. Unfortunately, as the technology node descends deeper into the nanometre region, achieving the potential performance gain is becoming more of a challenge; due not only to the effects of process variation but also to the reduced timing margins between signals within the circuit creating timing problems. Production Standard Automatic Test Equipment (ATE) is incapable of performing internal timing measurements due, first to the lack of accessibility and second to the overall timing accuracy of the tester which is grossly inadequate. To address these issue ‘on-chip’ time measurement circuits have been developed in a similar way that built in self-test (BIST) evolved for ‘on-chip’ logic testing. This thesis describes the design and analysis of three time amplifier circuits. The analysis undertaken considers the operational aspects related to gain and input dynamic range, together with the robustness of the circuits to the effects of process, voltage and temperature (PVT) variations. The design which had the best overall performance was subsequently compared to a benchmark design, which used the ‘buffer delay offset’ technique for time amplification, and showed a marked 6.5 times improvement on the dynamic range extending this from 40 ps to 300ps. The new design was also more robust to the effects of PVT variations. The new time amplifier design was further developed to include an adjustable gain capability which could be varied in steps of approximately 7.5 from 4 to 117. The time amplifier was then connected to a 32-stage tapped delay line to create a reconfigurable time measurement circuit with an adjustable resolution range from 15 down to 0.5 ps and a dynamic range from 480 down to 16 ps depending upon the gain setting. The overall footprint of the measurement circuit, together with its calibration module occupies an area of 0.026 mm2 The final circuit, overall, satisfied the main design criteria for ‘on-chip’ time measurement circuitry, namely, it has a wide dynamic range, high resolution, robust to the effects of PVT and has a small area overhead.Umm Al-Qura University

Ring-oscillator with multiple transconductors for linear analog-to-digital conversion

This paper proposes a new circuit-based approach to mitigate nonlinearity in open-loop ring-oscillator-based analog-to-digital converters (ADCs). The approach consists of driving a current-controlled oscillator (CCO) with several transconductors connected in parallel with different bias conditions. The current injected into the oscillator can then be properly sized to linearize the oscillator, performing the inverse current-to-frequency function. To evaluate the approach, a circuit example has been designed in a 65-nm CMOS process, leading to a more than 3-ENOB enhancement in simulation for a high-swing differential input voltage signal of 800-mVpp, with considerable less complex design and lower power and expected area in comparison to state-of-the-art circuit based solutions. The architecture has also been checked against PVT and mismatch variations, proving to be highly robust, requiring only very simple calibration techniques. The solution is especially suitable for high-bandwidth (tens of MHz) medium-resolution applications (10–12 ENOBs), such as 5G or Internet-of-Things (IoT) devices.This research was funded by Project TEC2017-82653-R, Spain