Development of an integrated silicon photonic transceiver for access networks

Debido a la imparable aparición de dispositivos móviles multifunción junto con aplicaciones que requieren cada vez más un mayor ancho de banda en cualquier momento y en cualquier lugar, las futuras redes de acceso deberán ser capaces de proporcionar servicios tanto inalámbricos como cableados. Es por ello que una solución a seguir es el uso de sistemas de comunicaciones ópticas como medio de transporte de señales inalámbricas en enlaces de radio sobre fibra. Con ello, se converge a un dominio óptico reduciendo y aliviando el cuello de botella entre los estándares de acceso inalámbrico y cableado. En esta tesis, como parte de los objetivos establecidos en el proyecto europeo HELIOS en el que está enmarcada, se han investigado y desarrollado los bloques funcionales básicos necesarios para realizar un transceptor fotónico integrado trabajando en el rango de longitudes de onda milimétricas, y haciendo uso de los formatos de modulación más robustos y que mejor se adaptan al ámbito de aplicación considerado. El trabajo que se presenta en esta tesis se puede dividir básicamente en tres partes. La primera de ellas ofrece una descripción general de los beneficios del uso de la fotónica en silicio para el desarrollo de enlaces inalámbricos a velocidades de Gbps, así como el estado del arte de los transceptores desarrollados por los grupos de investigación más activos y punteros para satisfacer las necesidades de mercado, cada vez más exigentes. La segunda parte se centra en el estudio y desarrollo del transmisor integrado de onda milimétrica. Primero realizamos una breve introducción teórica tanto del funcionamiento de los dispositivos que forman parte del transmisor, como a los formatos de modulación existentes, centrando la atención en la modulación por desplazamiento de fase (PSK) que es la que se va a utilizar en el desarrollo de los dispositivos implicados, y más concretamente en la modulación (diferencial) de fase en cuadratura ((D)QPSK). También se presentan los bloques básicos que integran nuestro transmisor y se fijan las especificaciones que deben cumplir dichos bloques para conseguir una transmisión libre de errores. El transmisor está compuesto por un filtro/demultiplexor encargado de separar dos portadoras ópticas separadas una frecuencia de 60 GHz. Una de estas portadoras es modulada al pasar por un modulador DQPSK basado en una estructura de dos MachZehnders (MZs) anidados, para ser nuevamente combinada con la otra portadora óptica que se ha mantenido intacta. Una vez combinadas, éstas son fotodetectadas para ser transmitidas inalámbricamente. En la tercera parte de esta tesis, se investiga el uso de un esquema de diversidad en polarización junto a un receptor DQPSK integrado para la demodulación de la señal recibida. El esquema de diversidad en polarización está formado básicamente por dos bloques: un separador de polarización con el objetivo de separar la luz a la entrada del chip en sus dos componentes ortogonales; y un rotador de polarización. En lo que se refiere al receptor DQPSK propiamente dicho, se ha investigado y optimizado cada uno de los bloques funcionales que lo componen. Éstos son básicamente un divisor de potencia termo-ópticamente sintonizable basado en un interferómetro MZ, en serie con un interferómetro MZ que introduce un retardo de duración de un bit en uno de sus brazos, para obtener una correcta demodulación diferencial. El siguiente bloque que forma parte de nuestro receptor DQPSK es un 2x4 acoplador de interferencia multimodal actuando como un híbrido de 90 grados, cuyas salidas van a parar a dos fotodetectores balanceados de germanio. Las contribuciones principales de esta tesis han sido: ¿ Demostración de un filtro/demultiplexor con tres grados de sintonización con una relación de extinción superior a 25dB. ¿ Demostración de un rotador con una longitud de tan sólo 25µm y CMOS compatible. ¿ Demostración de un modulador DPSK a una velocidad máxima de 20 Gbit/s. ¿ Demostración de un demodulador DQPSK a una velocidad máxima de 20 Gbit/s.Due to the relentless emergence of multifunction mobile devices with applications that require increasingly greater bandwidth at anytime and anywhere, future access networks must be capable of providing both wireless and wired services. The use of optical communications systems as transport medium of wireless signals over fiber radio links is a steady solution to be taken into account. This will make possible a convergence to an optical domain reducing and alleviating the bottleneck between wireless access standards and current wired access. In this thesis, as part of the objectives of the European project HELIOS in which it is framed, we have investigated and developed the basic functional blocks needed to achieve an integrated photonic transceiver working in the range of millimetre wavelengths, and using robust modulation formats that best fit the scope considered. The work presented in this thesis can be basically divided into three parts. The first one provides an overview of the benefits of using silicon photonics for the development of wireless links at rates of Gbps, and the state of the art of the transceivers reported by the most important research groups in order to meet the increasingly demanding needs¿ market. The second part focuses on the study and development of millimetre-wave integrated transmitter. First we provide a brief theoretical introduction of the operation principles of the devices involved in the transmitter such as a modulation formats, focusing on the phase shift keying (PSK) which is the one that will be used, particularly the (differential) quadrature phase shift keying ((D) QPSK). We also present the building blocks involved in our transmitter and we set the specifications that must be met by these devices in order to achieve an error-free transmission. The transmitter includes a filter/demultiplexer which must separate two optical carriers 60 GHz separated. One of these optical carriers is modulated by passing through a DQPSK Mach-Zehnder-based modulator (MZM) by arranging two MZMs in a nested configuration. Using a combiner, the modulated optical signal and the un-modulated carrier are combined and photodetected to be transmitted wirelessly. In the third part of this thesis, we investigate the use of a polarization diversity scheme with an integrated DQPSK receiver for demodulating of the wireless signal. The polarization diversity scheme basically consists of two blocks: a polarization splitter in order to separate the random polarization state of the incoming light into its two orthogonal components, and a polarization rotator. Regarding the DQPSK receiver itself, all the functional blocks that comprise it have been investigated and optimized. It basically includes a thermo-optically tunable MZ interferometer power splitter, in series with a MZ interferometer that introduces, in one of its arms, a delay of one bit length in order to obtain a correct differential demodulation. The next building block of our DQPSK receiver is a 2x4 multimode interference coupler acting as a 90 degree hybrid, whose outputs are connected to two balanced germanium photodetectors. The main contributions of this thesis are: ¿ Demonstration of a filter/demultiplexer with three degrees of tuning and an extinction ratio greater than 25dB. ¿ Demonstration of a polarization rotator with a length of only 25¿m and CMOS compatible. ¿ Demonstration of a DPSK modulator at a maximum rate of 20 Gbit/s. ¿ Demonstration of a DQPSK demodulator to a maximum rate of 20 Gbit/s.Aamer, M. (2013). Development of an integrated silicon photonic transceiver for access networks [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/31649TESI

Silicon Photonics for All-Optical Processing and High-Bandwidth-Density Interconnects

Silicon photonics has emerged in recent years as one of the leading technologies poised to enable penetration of optical communications deeper and more intimately into computing systems than ever before. The integration potential of power efficient WDM links at the first level package or even deeper has been a strong driver for the rapid development this field has seen in recent years. The integration of photonic communication modules with very high bandwidth densities and virtually no bandwidth-distance limitations at the short reach regime of high performance computers and data centers has the potential to alleviate many of the bandwidth bottlenecks currently faced by board, rack, and facility levels. While networks on chip for chip multiprocessors (CMP) were initially deemed the target application of silicon photonic components, it has become evident in recent years that the initial lower hanging fruit is the CMP's I/O links to memory as well as other CMPs. The first chapter of the thesis provides more detailed motivation for the integration of silicon photonic modules into compute systems and surveys some of the recent developments in the field. The second chapter then proceeds to detail a technical case study of silicon photonic microring-based WDM links' scalability and power efficiency for these chip I/O applications which could be developed in the intermediate future. The analysis, initiated originally for a workshop on optical and electrical board and rack level interconnects, looks into a detailed model of the optical power budget for such a link capturing both single-channel aspects as well as WDM-operation-related considerations which are unique for a microring physical characteristics. The holistic analysis for the full link captures the wavelength-channel-spacing dependent characteristics, provides some methodologies for device design in the WDM-operation context, and provides performance predictions based on current best-of-class silicon photonic devices. The key results of the analysis are the determination of upper bounds on the aggregate achievable communication bandwidth per link, identifying design trade-offs for bandwidth versus power efficiency, and highlighting the need for continued technological improvements in both laser as well as photodetector technologies to allow acceptable power efficiency operation of such systems.The third chapter, while continuing on the theme silicon photonic high bandwidth density links, proceeds to detail the first experimental demonstration and characterization of an on-chip spatial division multiplexing (SDM) scheme based on microrings for the multiplexing and demultiplexing functionalities. In the context of more forward looking optical network-on-chip environments, SDM-enabled WDM photonic interconnects can potentially achieve superior bandwidth densities per waveguide compared to WDM-only photonic interconnects. The microring-based implementation allows dynamic tuning of the multiplexing and demultiplexing characteristic of the system which allows operation on WDM grid as well device tuning to combat intra-channel crosstalk. The characterization focuses on the first reported power penalty measurements for on-chip silicon photonic SDM link showing minimal penalties achievable with 3 spatial modes concurrently operating on a single waveguide with 10-Gb/s data carried by each mode. The chapter also details the first demonstration of WDM combined with SDM operation with six separate wavelength-and-spatial 10-Gb/s channels with error free operation and low power penalties. The fourth, fifth, and sixth chapters shift in topic from the application of silicon photonics to communication links to the evolving use of silicon waveguides for nonlinear all-optical processing. The unique tight mode confinement in sub-micron cross-sections combined with the high response of silicon have motivated the development of four-wave mixing (FWM)-based processing silicon devices. The key feature of the silicon platform for these nonlinear processing platforms is the ability to finely and uniformly control the dispersive properties of the optical structures in a way that enables completely offsetting the material dispersion and achieve dispersion profiles required for effective parametric interaction of waves in the optical structures. Chapter four primarily introduces and motivates nonlinear processing in communication applications and focuses on recent achievements in non-silicon and silicon FWM platforms. Chapter five describes some of the author's contributions on parametric processing of high speed data in silicon nonlinear devices, with first of a kind demonstrations of wavelength conversion of 160-Gb/s optically time division multiplexed (OTDM) data as well as the wavelength-multicasting of a 320-Gb/s OTDM stream. The chapter then details a methodical characterization and demonstration of several record wavelength conversion experiments of data in silicon with 40-Gb/s data wavelength-converted across more than 100 nm with only 1.4-dB of power penalties as well as the wavelength and format conversion of 10-Gb/s data across up to 168 nm with sensitivity gains stemming from the format conversion of about 2 dB and a residual conversion penalty of only 0.1 dB, achieved by implementing an improved experimental setup. Both experiments highlight the performance uniformity of the conversion process for a wide range of probe-idler detuning settings, showcasing the silicon platform's unique broadband phase matching properties. The sixth chapter presents a slight shift in motivation for parametric processing from traditional telecom-wavelength applications to functionalities developed targeting mid-IR operation. Parametric-processing in the silicon platform at long wavelengths holds large potential for performance improvements due to the elimination of two-photon absorption in silicon at long wavelengths as well as silicon's dispersion engineering capabilities which uniquely position the silicon platform for effective phase matching of significantly wavelength detuned waves. Four-wave mixing signal generation and reception at mid-IR wavelengths are attractive candidates for tunable flexible operation with modulation and detection speeds which are currently only available at telecom wavelengths. With this vision in mind, several contributions detailing extension of FWM functionalities in silicon to operate at wavelengths close to 2 μm with performance equivalent to much smaller detuning setting measurements. The contributions detail the experimental demonstration of the first silicon optical processing functionalities achieved at such long wavelengths including the wavelength conversion and unicast of 10-Gb/s signals with up to 700 nm of probe-idler detuning, the combined two-stage 10-Gb/s FWM-link in which both data generation and detection at 1900 nm is facilitated by parametric processing in silicon with only 2.1-dB overall penalty, the first ever 40-Gb/s receiver at 1900 nm based on a FWM stage for simultaneous temporal demultiplexing and wavelength conversion, and lastly, the demonstration of a 40-Gb/s FWM-link operation with only 3.6 dB of penalty. The chapter concludes with a short discussion on possible extensions to enable silicon parametric processing at even longer wavelengths targeting the mid-IR spectral transmission window of 3-5 μm

Silicon Modulators, Switches and Sub-systems for Optical Interconnect

Silicon photonics is emerging as a promising platform for manufacturing and integrating photonic devices for light generation, modulation, switching and detection. The compatibility with existing CMOS microelectronic foundries and high index contrast in silicon could enable low cost and high performance photonic systems, which find many applications in optical communication, data center networking and photonic network-on-chip. This thesis first develops and demonstrates several experimental work on high speed silicon modulators and switches with record performance and novel functionality. A 8x40 Gb/s transmitter based on silicon microrings is first presented. Then an end-to-end link using microrings for Binary Phase Shift Keying (BPSK) modulation and demodulation is shown, and its performance with conventional BPSK modulation/ demodulation techniques is compared. Next, a silicon traveling-wave Mach- Zehnder modulator is demonstrated at data rate up to 56 Gb/s for OOK modulation and 48 Gb/s for BPSK modulation, showing its capability at high speed communication systems. Then a single silicon microring is shown with 2x2 full crossbar switching functionality, enabling optical interconnects with ultra small footprint. Then several other experiments in the silicon platform are presented, including a fully integrated in-band Optical Signal to Noise Ratio (OSNR) monitor, characterization of optical power upper bound in a silicon microring modulator, and wavelength conversion in a dispersion-engineered waveguide. The last part of this thesis is on network-level application of photonics, specically a broadcast-and-select network based on star coupler is introduced, and its scalability performance is studied. Finally a novel switch architecture for data center networks is discussed, and its benefits as a disaggregated network are presented

Silicon Photonic Platforms and Systems for High-speed Communications

Data communication is a critical component of modern technology in our society. There is an increasing reliance on information being at our fingers tips and we expect a low-latency, high-bandwidth connection to deliver entertainment or enhanced productivity. In order to serve this demand, communications devices are being pressed for smaller form factors, higher data throughput, lower power consumption and lower cost. Similar demands exist in a number of applications including metro/long-haul telecommunications, shorter datacenter links and supercomputing. Silicon photonics promises to be a technology that will solve some of the difficulties with improving communication devices. Building photonics in silicon allows for reuse of the same fabrication technology that is used by the CMOS electronics industry, potentially allowing for large volumes, high yields and low costs. Part I of this thesis details the design of components needed in a high-speed silicon photonic platform to meet the current challenges for high-speed communications. The author’s work in modeling photodetectors resulted in improving photodetector bandwidth from 30 GHz to 67 GHz, the fastest reported at the time of publication. Details regarding the optimization and test of modulators are also presented with the first-reported 50 Gbps modulator at 1310-nm. A large scale parallel channel demonstration of high-speed silicon photonics is then presented showing the potential scalability for silicon photonics systems. A full transceiver requires a number of components other than the photodetector and modulator that are the core active pieces of a silicon photonics platform. Part II includes work on the design and test of silicon photonic components providing functionality beyond the photodetector and modulator. A novel design integrating Metal-Semiconductor Field Effect Transistors (MESFETs) into a silicon photonics platform without process change is shown. This integration enables enhanced control functionality with minimal overhead. The critical final piece for a silicon photonics platform, adding a light source, is demonstrated along with performance results of the resulting tunable, extended C-band laser. In Part III, previous work on an enhanced silicon photonics platform with complementary components is used to build a high-speed integrated coherent link and then tested with a silicon photonics-based tunable laser. The transceiver was shown to operate at 34 Gbaud dual-polarization 16-QAM for a total of 272 Gbps over a single channel. This was the first published demonstration of an integrated coherent where all of the optics were built in a silicon photonics platform

Broadband quadrature-squeezed vacuum and nonclassical photon number correlations from a nanophotonic device

We report the first demonstrations of both quadrature squeezed vacuum and photon number difference squeezing generated in an integrated nanophotonic device. Squeezed light is generated via strongly driven spontaneous four-wave mixing below threshold in silicon nitride microring resonators. The generated light is characterized with both homodyne detection and direct measurements of photon statistics using photon number-resolving transition edge sensors. We measure $1.0(1)$~dB of broadband quadrature squeezing (${\sim}4$~dB inferred on-chip) and $1.5(3)$~dB of photon number difference squeezing (${\sim}7$~dB inferred on-chip). Nearly-single temporal mode operation is achieved, with raw unheralded second-order correlations $g^{(2)}$ as high as $1.87(1)$ measured (${\sim}1.9$~when corrected for noise). Multi-photon events of over 10 photons are directly detected with rates exceeding any previous quantum optical demonstration using integrated nanophotonics. These results will have an enabling impact on scaling continuous variable quantum technology.Comment: Significant improvements and updates to photon number squeezing results and discussions, including results on single temporal mode operatio

Design of Optical Interconnect Transceiver Circuits and Network-on-chip Architectures for Inter- and Intra-chip Communication

The rapid expansion in data communication due to the increased multimedia applications and cloud computing services necessitates improvements in optical transceiver circuitry power efficiency as these systems scale well past 10 Gb/s. In order to meet these requirements, a 26 GHz transimpedance amplifier (TIA) is presented in a 0.25-µm SiGe BiCMOS technology. It employs a transformer-based regulated cascode (RGC) input stage which provides passive negative-feedback gain that enhances the effective transconductance of the TIA’s input common-base transistor; reducing the input resistance and pro- viding considerable bandwidth extension without significant noise degradation or power consumption. The TIA achieves a 53 dBΩ single-ended transimpedance gain with a 26√ GHz bandwidth and 21.3 pA/H z average input-referred noise current spectral density. Total chip power including output buffering is 28.2 mW from a 2.5 V supply, with the core TIA consuming 8.2 mW, and the chip area including pads is 960 µm × 780 µm. With the advance of photonic devices, optical interconnects becomes a promising technology to replace the conventional electrical channels for the high-bandwidth and power efficient inter/intra-chip interconnect. Second, a silicon photonic transceiver is presented for a silicon ring resonator-based optical interconnect architecture in a 1V standard 65nm CMOS technology. The transmitter circuits incorporate high-swing drivers with non-linear pre-emphasis and automatic bias-based tuning for resonance wavelength stabilization. An optical forwarded-clock adaptive inverter-based transimpedance amplifier (TIA) receiver trades-off power for varying link budgets by employing an on-die eye monitor and scaling the TIA supply for the required sensitivity. At 5 GB/s operation, the ring modulator un- der 4Vpp driver achieves 12.7dB extinction ratio with 4.04mW power consumption, while a 0.28nm tuning range is obtained at 6.8µW/GHz efficiency with the bias-based tuning scheme implemented with the 2Vpp transmitter. When tested with a wire-bonded 150f- F p-i-n photodetector, the receiver achieves -12.7dBm sensitivity at a BER=10−15 and consumes 2.2mW at 8 GB/s. Third, a novel Nano-Photonic Network-on-Chip (NoC) architecture, called LumiNoC, is proposed for high performance and power-efficient interconnects for the chip-multi- processors (CMPs). A 64-node LumiNoC under synthetic traffic enjoys 50% less latency at low loads versus other reported photonic NoCs, and ∼25% less latency versus the electrical 2D mesh NoCs on realistic workloads. Under the same ideal throughput, LumiNoC achieves laser power reduction of 78%, and overall power reduction of 44% versus competing designs

Development of Silicon Photonic Multi Chip Module Transceivers

The exponential growth of data generation–driven in part by the proliferation of applications such as high definition streaming, artificial intelligence, and the internet of things–presents an impending bottleneck for electrical interconnects to fulfill data center bandwidth demands. Links now require bandwidths in excess of multiple Tbps while operating on the order of picojoules per bit, in addition to constraints on areal bandwidth densities and pin I/O bandwidth densities. Optical communications built on a silicon photonic platform offers a potential solution to develop power efficient, high bandwidth, low attenuation, small footprint links, all while building off the mature CMOS ecosystem. The development of silicon photonic foundries supporting multi project wafer runs with associated process design kit components supports a path towards widespread commercial production by increasing production volume while reducing fabrication and development costs. While silicon photonics can always be improved in terms of performance and yield, one of the central challenges is the integration of the silicon photonic integrated circuits with the driving electronic integrated circuits and data generating compute nodes such as CPUs, FPGAs, and ASICs. The co-packaging of the photonics with the electronics is crucial for adoption of silicon photonics in datacenters, as improper integration negates all the potential benefits of silicon photonics. The work in this dissertation is centered around the development of silicon photonic multi chip module transceivers to aid in the deployment of silicon photonics within data centers. Section one focuses on silicon photonic integration and highlights multiple integrated transceiver prototypes. The central prototype features a photonic integrated circuit with bus waveguides with WDM microdisk modulators for the transmitter and WDM demuxes with drop ports to photodiodes for the receiver. The 2.5D integrated prototype utilizes a thinned silicon interposer and TIA electronic integrated circuits. The architecture, integration, characterization, performance, and scalability of the prototype are discussed. The development of this first prototype identified key design considerations necessary for designing multi chip module silicon photonic prototypes, which will be addressed in this section. Finally, other multi chip module silicon photonic prototypes will be overviewed. These include a 2.5D integrated transceiver with a different electronic integrated circuit TIA, a 3D integrated receiver, an active interposer network on chip, and a 2.5D integrated transceiver with custom electronic integrated circuits. Section two focuses on research that supports the development of silicon photonic transceivers. The thermal crosstalk from neighboring microdisk modulators as a function of modulator pitch is investigated. As modulators are placed at denser pitches to accommodate areal bandwidth density requirements in transceivers, this thermal crosstalk will become significant. In this section, designs and results from several iterations of custom microring modulators are reported. Custom microring modulators allow for scaling up the number of channels in microring transceivers by offering the ability to fabricate variable resonances and provide a platform for further innovation in bandwidth, free spectral range, and energy efficiency. The designs and results of higher order modulation format modulators, both microring based and Mach Zehnder based, are discussed. High order modulators offer a path towards scaling transceiver total throughput without having to increase the channel counts or component bandwidth. Together, the work in these two sections supports the development of silicon photonic transceivers to aid in the adoption of silicon photonics into data generating systems

Investigation into Smart Multifunctional Optical System-On-A-Chip Sensor Platform and Its Applications in Optical Wireless Sensor Networks

Wireless sensor networks (WSNs) have been widely used in various applications to acquire distributed information through cooperative efforts of sensor nodes. Most of the sensor nodes used in WSNs are based on mechanical or electrical sensing mechanisms, which are susceptible to electromagnetic interference (EMI) and can hardly be used in harsh environments. Although these disadvantages of conventional sensor nodes can be overcome by employing optical sensing methods, traditional optical systems are usually bulky and expensive, which can hardly be implemented in WSNs. Recently, the emerging technologies of silicon photonics and photonic crystal promise a solution of integrating a complete optical system through a complementary metal-oxide-semiconductor (CMOS) process. However, such an integration still remains a challenge. The overall objective of this dissertation work is to develop a smart multifunctional optical system-on-a-chip (SOC) sensor platform capable of both phase modulation and wavelength tuningfor heterogeneous sensing, and implement this platform in a sensor node to achieve an optical WSN for various applications, including those in harsh environments. The contributions of this dissertation work are summarized as follows. i)A smart multifunctional optical SOC sensor platform for heterogeneous sensing has beendeveloped for the first time. This platform can be used to perform phase modulation and demodulation in a low coherence interferometric configuration or wavelength tuning in a spectrum sensing configuration.The multifunctional optical sensor platform is developed through hybrid integration of a light source, an optical modulator, and multiple photodetectors. As the key component of the SOC platform, two types of modulators, namely, the opto-mechanical and electro-optical modulators, are investigated. For the first time, interrogating different types of heterogeneous sensors, including various Fabry-Perot (FP) sensors and fiber Bragg grating (FBG) sensors, with a single SOC sensor platform, is demonstrated. ii)Enhanced understanding of the principles of the multifunctional optical platform withanopto-mechanical modulator has been achieved.As a representative of opto-mechanical modulators, a microelectromechanical systems (MEMS) based FP tunable filter is thoroughly investigated through mechanical and optical modeling. The FP tunable filter is studied for both phase modulation and wavelength tuning, and design guidelines are developed based on the modeling and parametric studies. It is found that the MEMS tunable filter can achieve a large modulation depth, but it suffers from a trade-off between modulation depth and speed. iii) A novel silicon electro-optical modulator based on microring structures for optical phase modulation and wavelength tuning has been designed. To overcome the limitations of the opto-mechanical modulators including low modulation speed and mechanical instability, a CMOS compatible high speed electro-optical silicon modulator is designed, which combines microring and photonic crystal structures for phase modulation in interferometric sensors and makes use of two cascaded microrings for wavelength tuning in sensors that require spectrum domain signal processing. iv)A novel optical SOC WSN node has been developed. The optical SOC sensor platform and the associated electric circuit are integrated with a conventional WSN module to achieve an optical WSN node, enabling optical WSNs for various applications. v) A novel cross-axial dual-cavity FP sensor has been developed for simultaneous pressure and temperature sensing.Across-axial sensor is useful in measuring static pressures without picking up dynamic pressures in the presence of surface flows. The dual-cavity sensing structure is used for both temperature and pressure measurements without the need for another temperature sensor for temperature drift compensation. This sensor can be used in moderate to high temperature environments, which demonstrates the potential of using the optical WSN sensor node in a harsh environment