Digital implementation of the cellular sensor-computers

Two different kinds of cellular sensor-processor architectures are used nowadays in various applications. The first is the traditional sensor-processor architecture, where the sensor and the processor arrays are mapped into each other. The second is the foveal architecture, in which a small active fovea is navigating in a large sensor array. This second architecture is introduced and compared here. Both of these architectures can be implemented with analog and digital processor arrays. The efficiency of the different implementation types, depending on the used CMOS technology, is analyzed. It turned out, that the finer the technology is, the better to use digital implementation rather than analog

Design and develop a MOS magnetic memory Final report, 11 Mar. - 11 Sep. 1966

Interface problems between plated wire magnetic memory and MO

Exploring Processor and Memory Architectures for Multimedia

Multimedia has become one of the cornerstones of our 21st century society and, when combined with mobility, has enabled a tremendous evolution of our society. However, joining these two concepts introduces many technical challenges. These range from having sufficient performance for handling multimedia content to having the battery stamina for acceptable mobile usage. When taking a projection of where we are heading, we see these issues becoming ever more challenging by increased mobility as well as advancements in multimedia content, such as introduction of stereoscopic 3D and augmented reality. The increased performance needs for handling multimedia come not only from an ongoing step-up in resolution going from QVGA (320x240) to Full HD (1920x1080) a 27x increase in less than half a decade. On top of this, there is also codec evolution (MPEG-2 to H.264 AVC) that adds to the computational load increase. To meet these performance challenges there has been processing and memory architecture advances (SIMD, out-of-order superscalarity, multicore processing and heterogeneous multilevel memories) in the mobile domain, in conjunction with ever increasing operating frequencies (200MHz to 2GHz) and on-chip memory sizes (128KB to 2-3MB). At the same time there is an increase in requirements for mobility, placing higher demands on battery-powered systems despite the steady increase in battery capacity (500 to 2000mAh). This leaves negative net result in-terms of battery capacity versus performance advances. In order to make optimal use of these architectural advances and to meet the power limitations in mobile systems, there is a need for taking an overall approach on how to best utilize these systems. The right trade-off between performance and power is crucial. On top of these constraints, the flexibility aspects of the system need to be addressed. All this makes it very important to reach the right architectural balance in the system. The first goal for this thesis is to examine multimedia applications and propose a flexible solution that can meet the architectural requirements in a mobile system. Secondly, propose an automated methodology of optimally mapping multimedia data and instructions to a heterogeneous multilevel memory subsystem. The proposed methodology uses constraint programming for solving a multidimensional optimization problem. Results from this work indicate that using today’s most advanced mobile processor technology together with a multi-level heterogeneous on-chip memory subsystem can meet the performance requirements for handling multimedia. By utilizing the automated optimal memory mapping method presented in this thesis lower total power consumption can be achieved, whilst performance for multimedia applications is improved, by employing enhanced memory management. This is achieved through reduced external accesses and better reuse of memory objects. This automatic method shows high accuracy, up to 90%, for predicting multimedia memory accesses for a given architecture

AI/ML Algorithms and Applications in VLSI Design and Technology

An evident challenge ahead for the integrated circuit (IC) industry in the nanometer regime is the investigation and development of methods that can reduce the design complexity ensuing from growing process variations and curtail the turnaround time of chip manufacturing. Conventional methodologies employed for such tasks are largely manual; thus, time-consuming and resource-intensive. In contrast, the unique learning strategies of artificial intelligence (AI) provide numerous exciting automated approaches for handling complex and data-intensive tasks in very-large-scale integration (VLSI) design and testing. Employing AI and machine learning (ML) algorithms in VLSI design and manufacturing reduces the time and effort for understanding and processing the data within and across different abstraction levels via automated learning algorithms. It, in turn, improves the IC yield and reduces the manufacturing turnaround time. This paper thoroughly reviews the AI/ML automated approaches introduced in the past towards VLSI design and manufacturing. Moreover, we discuss the scope of AI/ML applications in the future at various abstraction levels to revolutionize the field of VLSI design, aiming for high-speed, highly intelligent, and efficient implementations

Intrinsic variability of nanoscale CMOS technology for logic and memory.

The continuous downscaling of CMOS technology, the main engine of development of the semiconductor Industry, is limited by factors that become important for nanoscale device size, which undermine proper device operation completely offset gains from scaling. One of the main problems is device variability: nominally identical devices are different at the microscopic level due to fabrication tolerance and the intrinsic granularity of matter. For this reason, structures, devices and materials for the next technology nodes will be chosen for their robustness to process variability, in agreement with the ITRS (International Technology Roadmap for Semiconductors). Examining the dispersion of various physical and geometrical parameters and the effect these have on device performance becomes necessary. In this thesis, I focus on the study of the dispersion of the threshold voltage due to intrinsic variability in nanoscale CMOS technology for logic and for memory. In order to describe this, it is convenient to have an analytical model that allows, with the assistance of a small number of simulations, to calculate the standard deviation of the threshold voltage due to the various contributions

Method for making a monolithic integrated high-T.sub.c superconductor-semiconductor structure

A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates

Strategies for Optimising DRAM Repair

Dynamic Random Access Memories (DRAM) are large complex devices, prone to defects during manufacture. Yield is improved by the provision of redundant structures used to repair these defects. This redundancy is often implemented by the provision of excess memory capacity and programmable address logic allowing the replacement of faulty cells within the memory array. As the memory capacity of DRAM devices has increased, so has the complexity of their redundant structures, introducing increasingly complex restrictions and interdependencies upon the use of this redundant capacity. Currently redundancy analysis algorithms solving the problem of optimally allocating this redundant capacity must be manually customised for each new device. Compromises made to reduce the complexity, and human error, reduce the efficacy of these algorithms. This thesis develops a methodology for automating the customisation of these redundancy analysis algorithms. Included are: a modelling language describing the redundant structures (including the restrictions and interdependencies placed upon their use), algorithms manipulating this model to generate redundancy analysis algorithms, and methods for translating those algorithms into executable code. Finally these concepts are used to develop a prototype software tool capable of generating redundancy analysis algorithms customised for a specified device

Advances in Solid State Circuit Technologies

This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields