2 research outputs found

    ๋ฉ”๋ชจ๋ฆฌ ์ธํ„ฐํŽ˜์ด์Šค๋ฅผ ์œ„ํ•œ ๋ฉ€ํ‹ฐ ๋ ˆ๋ฒจ ๋‹จ์ผ ์ข…๋‹จ ์†ก์‹ ๊ธฐ ์„ค๊ณ„

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    ํ•™์œ„๋…ผ๋ฌธ (๋ฐ•์‚ฌ) -- ์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› : ๊ณต๊ณผ๋Œ€ํ•™ ์ „๊ธฐยท์ปดํ“จํ„ฐ๊ณตํ•™๋ถ€, 2020. 8. ๊น€์ˆ˜ํ™˜.๋ณธ ์—ฐ๊ตฌ์—์„œ ๋ฉ”๋ชจ๋ฆฌ ์ธํ„ฐํŽ˜์ด์Šค๋ฅผ ์œ„ํ•œ ๋ฉ€ํ‹ฐ ๋ ˆ๋ฒจ ์†ก์‹ ๊ธฐ๊ฐ€ ์ œ์‹œ๋˜์—ˆ๋‹ค. ํ”„๋กœ์„ธ์„œ์™€ ๋ฉ”๋ชจ๋ฆฌ ๊ฐ„์˜ ์„ฑ๋Šฅ ์ฐจ์ด๊ฐ€ ๋งค๋…„ ๊ณ„์† ์ฆ๊ฐ€ํ•จ์— ๋”ฐ๋ผ, ๋ฉ”๋ชจ๋ฆฌ๋Š” ์ „์ฒด ์‹œ์Šคํ…œ์˜ ๋ณ‘๋ชฉ์ ์ด ๋˜๊ณ ์žˆ๋‹ค. ์šฐ๋ฆฌ๋Š” ๋ฉ”๋ชจ๋ฆฌ ๋Œ€์—ญํญ์„ ๋Š˜๋ฆฌ๊ธฐ ์œ„ํ•ด PAM-4 ๋‹จ์ผ ์ข…๋‹จ ์†ก์‹ ๊ธฐ๋ฅผ ์ œ์•ˆํ•˜์˜€๊ณ , ๋ฉ€ํ‹ฐ ๋žญํฌ ๋ฉ”๋ชจ๋ฆฌ๋ฅผ ์œ„ํ•œ duobinary ๋‹จ์ผ ์ข…๋‹จ ์†ก์‹ ๊ธฐ๋ฅผ ์ œ์•ˆํ•˜์˜€๋‹ค. ์ œ์•ˆ๋œ PAM-4 ์†ก์‹ ๊ธฐ์˜ ๋“œ๋ผ์ด๋ฒ„๋Š” ๋†’์€ ์„ ํ˜•์„ฑ๊ณผ ์ž„ํ”ผ๋˜์Šค ์ •ํ•ฉ์„ ๋™์‹œ์— ๋งŒ์กฑํ•œ๋‹ค. ๋˜ํ•œ ์ €ํ•ญ์ด๋‚˜ ์ธ๋•ํ„ฐ๋ฅผ ์‚ฌ์šฉํ•˜์ง€ ์•Š์•„ ์ž‘์€ ๋ฉด์ ์„ ์ฐจ์ง€ํ•œ๋‹ค. ์ œ์•ˆ๋œ ZQ ์บ˜๋ฆฌ๋ธŒ๋ ˆ์ด์…˜์€ ์„ธ๊ฐœ์˜ ๊ต์ • ์ ์„ ๊ฐ€์ง€๊ณ  ์žˆ์–ด ์†ก์‹ ๊ธฐ๊ฐ€ ์ •ํ™•ํ•œ ์ž„ํ”ผ๋˜์Šค์™€ ์„ ํ˜•์ ์ธ ์ถœ๋ ฅ์„ ๊ฐ–๊ฒŒ ํ•œ๋‹ค. ํ”„๋กœํ†  ํƒ€์ž…์€ 65nm CMOS ๊ณต์ •์œผ๋กœ ์ œ์ž‘๋˜์—ˆ๊ณ  ์†ก์‹ ๊ธฐ๋Š” 0.0333mm2์˜ ๋ฉด์ ์„ ์ฐจ์ง€ํ•œ๋‹ค. ์ธก์ •๋œ 28Gb/s์—์„œ์˜ eye๋Š” 18.3ps์˜ ๊ธธ์ด์™€ 42.4mV์˜ ๋†’์ด๋ฅผ ๊ฐ–๊ณ , ์—๋„ˆ์ง€ ํšจ์œจ์€ 0.64pJ/bit์ด๋‹ค. ZQ ์บ˜๋ฆฌ๋ธŒ๋ ˆ์ด์…˜๊ณผ ํ•จ๊ป˜ ์ธก์ •๋œ RLM์€ 0.993์ด๋‹ค. ๋ฉ”๋ชจ๋ฆฌ์˜ ์šฉ๋Ÿ‰์„ ๋Š˜๋ฆฌ๊ธฐ ์œ„ํ•ด ํ•˜๋‚˜์˜ ํŒจํ‚ค์ง€์— ์—ฌ๋Ÿฌ ๊ฐœ์˜ DRAM ๋‹ค์ด๋ฅผ ์ˆ˜์ง์œผ๋กœ ์Œ“๋Š” ํŒจํ‚ค์ง•์€ ๋ฉ”๋ชจ๋ฆฌ์˜ ์ค‘์•™ ํŒจ๋“œ ๊ตฌ์กฐ์™€ ๊ฒฐํ•ฉ๋˜์–ด ์งง์€ ๋ฐ˜์‚ฌ๋ฅผ ์•ผ๊ธฐํ•˜๋Š” ์Šคํ…์„ ๋งŒ๋“ ๋‹ค. ์šฐ๋ฆฌ๋Š” ์ด ๋ฌธ์ œ๋ฅผ ์™„ํ™”ํ•˜๊ธฐ์œ„ํ•ด ๋ฐ˜์‚ฌ ๊ธฐ๋ฐ˜ duobinary ์†ก์‹ ๊ธฐ๋ฅผ ์ œ์•ˆํ–ˆ๋‹ค. ์ด ์†ก์‹ ๊ธฐ๋Š” ๋ฐ˜์‚ฌ๋ฅผ ์ด์šฉํ•˜์—ฌ duobinary signaling์„ ํ•œ๋‹ค. 2ํƒญ ๋ฐ˜๋Œ€ ๊ฐ•์กฐ ๊ธฐ์ˆ ๊ณผ ์Šฌ๋ฃจ ๋ ˆ์ดํŠธ ์กฐ์ ˆ ๊ธฐ์ˆ ์ด ์‹ ํ˜ธ ์™„๊ฒฐ์„ฑ์„ ๋†’์ด๊ธฐ ์œ„ํ•ด ์‚ฌ์šฉ๋˜์—ˆ๋‹ค. NRZ eye๊ฐ€ ์—†๋Š” 10Gb/s์—์„œ ์ธก์ •๋œ duobinary eye๋Š” 63.6ps ๊ธธ์ด์™€ 70.8mV์˜ ๋†’์ด๋ฅผ ๊ฐ–๋Š”๋‹ค. ์ธก์ •๋œ ์—๋„ˆ์ง€ ํšจ์œจ์€ 1.38pJ/bit์ด๋‹ค.Multi-level transmitters for memory interfaces have been presented. The performance gap between processor and memory has been increased by 50% every year, making memory to be a bottle neck of the overall system. To increase memory bandwidth, we have proposed a PAM-4 single-ended transmitter. To compensate for the side effect of the multi-rank memory, we have proposed a reflection-based duobinary transmitter. The proposed PAM-4 transmitter has the driver, which simultaneously satisfies impedance matching and high linearity. The driver occupies a small area due to a resistorless and inductorless structure. The proposed ZQ calibration for PAM-4 has three calibration points, which allow the transmitter to have accurate impedance and linear output. The ZQ calibration considers impedance variation of both the driver and the receiver. A prototype has been fabricated in 65nm CMOS process, and the transmitter occupies 0.0333mm2. The measured eye has a width of 18.3ps and a height of 42.4mV at 28Gb/s, and the measured energy efficiency is 0.64pJ/b. The measured RLM with the 3-point ZQ calibration is 0.993. To increase memory density, the stacked die packaging with multiple DRAM die stacked vertically in one package is widely used. However, combined with the center-pad structure, the structure creates stubs that cause short reflections. We have proposed the reflection-based duobinary transmitter to mitigate this problem. The proposed transmitter uses reflection for duobinary signaling. The 2-tap opposite FFE and the slew-rate control are used to increase signal integrity. The measured duobinary eye at 10Gb/s has a width of 63.6ps and a height of 70.8mV while there is no NRZ eye opening. The measured energy efficiency is 1.38pJ/bit.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 8 CHAPTER 2 MUTI-LEVEL SIGNALING 9 2.1 PAM-4 SIGNALING 9 2.2 DESIGN CONSIDERATIONS FOR PAM-4 TRANSMITTER 16 2.2.1 LEVEL SEPARATION MISMATCH RATIO (RLM) 17 2.2.2 IMPEDANCE MATCHING 19 2.2.3 PRIOR ARTS 21 2.3 DUOBINARY SIGNALING 24 CHAPTER 3 HIGH-LINEARITY AND IMPEDANCE-MATCHED PAM-4 TRANSMITTER 30 3.1 OVERALL ARCHITECTURE 31 3.2 SINGLE-ENDED IMPEDANCE-MATCHED PAM-4 DRIVER 33 3.3 3-POINT ZQ CALIBRATION FOR PAM-4 47 CHAPTER 4 REFLECTION-BASED DUOBINARY TRANSMITTER 57 4.1 BIDIRECTIONAL DUAL-RANK MEMORY SYSTEM 58 4.2 CONCEPT OF REFLECTION-BASED DUOBINARY SIGNALING 66 4.3 REFLECTION-BASED DUOBINARY TRANSMITTER 70 4.3.1 OVERALL ARCHITECTURE 70 4.3.2 EQUALIZATION FOR REFLECTION-BASED DUOBINARY SIGNALING 72 4.3.3 2D BINARY-SEGMENTED DRIVER 75 CHAPTER 5 EXPERIMENTAL RESULTS 77 5.1 HIGH-LINEARITY AND IMPEDANCE-MATCHED PAM-4 TRANSMITTER 77 5.2 REFLECTION-BASED DUOBINARY TRANSMITTER 84 CHAPTER 6 92 CONCLUSION 92 BIBLIOGRAPHY 94Docto

    Hybrid NRZ/Multi-Tone Signaling for High-Speed Low-Power Wireline Transceivers

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    Over the past few decades, incessant growth of Internet networking traffic and High-Performance Computing (HPC) has led to a tremendous demand for data bandwidth. Digital communication technologies combined with advanced integrated circuit scaling trends have enabled the semiconductor and microelectronic industry to dramatically scale the bandwidth of high-loss interfaces such as Ethernet, backplane, and Digital Subscriber Line (DSL). The key to achieving higher bandwidth is to employ equalization technique to compensate the channel impairments such as Inter-Symbol Interference (ISI), crosstalk, and environmental noise. Therefore, todayรขs advanced input/outputs (I/Os) has been equipped with sophisticated equalization techniques to push beyond the uncompensated bandwidth of the system. To this end, process scaling has continually increased the data processing capability and improved the I/O performance over the last 15 years. However, since the channel bandwidth has not scaled with the same pace, the required signal processing and equalization circuitry becomes more and more complicated. Thereby, the energy efficiency improvements are largely offset by the energy needed to compensate channel impairments. In this design paradigm, re-thinking about the design strategies in order to not only satisfy the bandwidth performance, but also to improve power-performance becomes an important necessity. It is well known in communication theory that coding and signaling schemes have the potential to provide superior performance over band-limited channels. However, the choice of the optimum data communication algorithm should be considered by accounting for the circuit level power-performance trade-offs. In this thesis we have investigated the application of new algorithm and signaling schemes in wireline communications, especially for communication between microprocessors, memories, and peripherals. A new hybrid NRZ/Multi-Tone (NRZ/MT) signaling method has been developed during the course of this research. The system-level and circuit-level analysis, design, and implementation of the proposed signaling method has been performed in the frame of this work, and the silicon measurement results have proved the efficiency and the robustness of the proposed signaling methodology for wireline interfaces. In the first part of this work, a 7.5 Gb/s hybrid NRZ/MT transceiver (TRX) for multi-drop bus (MDB) memory interfaces is designed and fabricated in 40 nm CMOS technology. Reducing the complexity of the equalization circuitry on the receiver (RX) side, the proposed architecture achieves 1 pJ/bit link efficiency for a MDB channel bearing 45 dB loss at 2.5 GHz. The measurement results of the first prototype confirm that NRZ/MT serial data TRX can offer an energy-efficient solution for MDB memory interfaces. Motivated by the satisfying results of the first prototype, in the second phase of this research we have exploited the properties of multi-tone signaling, especially orthogonality among different sub-bands, to reduce the effect of crosstalk in high-dense wireline interconnects. A four-channel transceiver has been implemented in a standard CMOS 40 nm technology in order to demonstrate the performance of NRZ/MT signaling in presence of high channel loss and strong crosstalk noise. The proposed system achieves 1 pJ/bit power efficiency, while communicating over a MDB memory channel at 36 Gb/s aggregate data rate
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