Wavelength stability in a hybrid photonic crystal laser through controlled nonlinear absorptive heating in the reflector

The need for miniaturized, fully integrated semiconductor lasers has stimulated significant research efforts into realizing unconventional configurations that can meet the performance requirements of a large spectrum of applications, ranging from communication systems to sensing. We demonstrate a hybrid, silicon photonics-compatible photonic crystal (PhC) laser architecture that can be used to implement cost-effective, high-capacity light sources, with high side-mode suppression ratio and milliwatt output output powers. The emitted wavelength is set and controlled by a silicon PhC cavity-based reflective filter with the gain provided by a III–V-based reflective semiconductor optical amplifier (RSOA). The high power density in the laser cavity results in a significant enhancement of the nonlinear absorption in silicon in the high Q-factor PhC resonator. The heat generated in this manner creates a tuning effect in the wavelength-selective element, which can be used to offset external temperature fluctuations without the use of active cooling. Our approach is fully compatible with existing fabrication and integration technologies, providing a practical route to integrated lasing in wavelength-sensitive schemes

High-speed optical data transmission for detector instrumentation in particle physics

This work discusses the advantage of optical transmission utilizing wavelength-division multiplexing for the read-out of experimental data in detector instrumentation in high-energy physics, astroparticle physics or photon science. A multi-channel optical transmitter is developed as the core component on a silicon-on-insulator platform. It implements Mach-Zehnder modulators with a depletion-type pn-phase shifter in each arm, while the (de )multiplexers rely on planar concave gratings. The modulator design is expected to support a symbol rate in the range 40 GBd even with a phase shifter length of 3 mm. The development of an efficient simulation method is presented, which allows for the reliable prediction of the steady-state modulator characteristics. Furthermore, this work addresses the packaging technology for grating-coupled silicon photonic components. In particular, a fabrication and assembly process for a planar fiber-to-chip coupling using angle-polished single-mode fibers is developed. A long-term-stable coupling with a small footprint is achieved, of which the coupling efficiency is only weakly dependent on ambient conditions

On-Chip Optical Interconnection Networks for Multi/Manycore Architectures

The rapid development of multi/manycore technologies offers the opportunity for highly parallel architectures implemented on a single chip. While the first, low-parallelism multicore products have been based on simple interconnection structures (single bus, very simple crossbar), the emerging highly parallel architectures will require complex, limited-degree interconnection networks. This thesis studies this trend according to the general theory of interconnection structures for parallel machines, and investigates some solutions in terms of performance, cost, fault-tolerance, and run-time support to shared-memory and/or message passing programming mechanisms

Towards coherent O-band data center interconnects

Upcoming generations of coherent intra/inter data center interconnects currently lack a clear path toward a reduction of cost and power consumption, which are the driving factors for these data links. In this work, the tradeoffs associated with a transition from coherent C-band to O-band silicon photonics are addressed and evaluated. The discussion includes the fundamental components of coherent data links, namely the optical components, fiber link and transceivers. As a major component of these links, a monolithic silicon photonic BiCMOS O-band coherent receiver is evaluated for its potential performance and compared to an analogous C-band device.TU Berlin, Open-Access-Mittel - 2021BMBF, 13N14932, Verbundprojekt: Photonic Embedding of Active Region LASER Chips on Silicon (PEARLS) - Teilvorhaben: Entwurf und Charakterisierung von eingebetteten, horizontal-gekoppelten Laser-Strukturen auf SiliziumEC/H2020/822002/EU/Lasercom-on-chip for next generation, high-speed satellite constelation interconnectivity/ORIONA

Novel printing technologies for nanophotonic and nanoelectronic devices

textAs optical interconnects make their paces to replace traditional electrical interconnects, implementing low cost optical components and hybrid optic-electronic systems are of great interest. In the research work described in this dissertation, we are making our efforts to develop several practical optical components using novel printing technologies including imprinting, ink-jet printing and a combination of both. Imprinting process using low cost electroplating mold is investigated and applied to the waveguide molding process, and it greatly reduces the surface roughness and thus the optical propagation loss. The imprinting process can be applied to photonic components from multi-mode waveguides with 50[mu]m critical dimension down to photonic crystal structures with 500nm hole diameter. Compared to traditional lithography process, imprinting process is featured by its great repeatability and high yield to define patterns on existing layers. Furthermore we still need an approach to deposit layers and that is the reason we integrate the ink-jet printing technology, another low-cost, low material consumption, environmental friendly process. Ink-jet printing process is capable of depositing a wide range of materials, including conductive layer, dielectric layer or other functional layers with defined patterns. Together with molding technology, we demonstrate three applications: proximity coupler, thermo-optic (TO) switch and electro-optic (EO) polymer modulator. The proximity coupler uses imprinted 50[mu]m waveguide with embedded mirrors and ink-jet printed micro-lenses to improve the board-to-board optical interconnects quality. The TO switch and EO modulator both utilize imprinting technology to define a core pattern in the cladding layer. Ink-jet printing is used to deposit the core layer for TO switch and the electrode layers for EO modulator. The fabricated TO switch operates at 1 kHz with less than 0.5ms switching time and the EO modulator shows V[pi][middle dot]L=5.68V[middle dot]cm. To the best of our knowledge, these are the first demonstrations of functional optical switches and modulators using printing method. To further enable the high rate fabrication of ink-jet printed photonic and electronic devices with multiple layers on flexible substrate, we develop a roll-to-roll ink-jet printing system, from hardware integration to software implementation. Machine vision aided real time automatic registration is achieved when printing multiple layers.Electrical and Computer Engineerin

Wafer-level processing of ultralow-loss Si3N4

Photonic integrated circuits (PICs) are devices fabricated on a planar wafer that allow light generation, processing, and detection. Photonic integration brings important advantages for scaling up the complexity and functionality of photonic systems and facilitates their mass deployment in areas where large volumes and compact solutions are needed, e.g., optical interconnects. Among the material platforms available, silicon nitride (Si3N4) displays excellent optical properties such as broadband transparency, moderately high refractive index, and relatively strong nonlinearities. Indeed, Si3N4 integrated waveguides display ultralow-loss (few decibels per meter), which enables efficient light processing and nonlinear optics. Moreover, Si3N4 is compatible with standard complementary metal oxide semiconductor (CMOS) processing techniques,which facilitates the manufacture scalability required by mass deployment of PICs. However, the selection of a single photonic platform sets limitations to the device functionalities due to the intrinsic properties of the material and the fundamental limitation of optical waveguiding. Multilayer integration of different platforms can overcome the limitations encountered in a singleplatform PIC.This thesis presents the development of advanced techniques for the waferlevel manufacturing of ultralow-loss Si3N4 devices and approaches to enable their interface with active components like modulators and chip-scale comb sources (microcombs). The investigation covers the tailoring of a waveguide to the functionality required, the wafer-scale manufacturing of Si3N4, and how to overcome the limitations of a single platform on a wafer. These studies enable high-yield fabrication of microcombs, the integration of two Si3N4 platforms on the same wafer, and a strategy to efficiently couple to an integrated LiNbO3 layer to expand the chip functionality and scale up the complexity of the PIC

Integrated polymer photonics : fabrication, design, characterization and applications

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InP-based membrane photodetectors on Si photonic circuitry

The work presented in this thesis is about indium phosphide (InP) based photodetectors for use in optical interconnections on silicon (Si) integrated circuits (ICs). The motivation for this work comes from the bottleneck expected at the interconnect level for future generation electronic ICs: with the technology scaling down and the signal switching frequency increasing, three main issues are predicted for the complementary metal-oxide semiconductor (CMOS) ICs, namely signal propagation delay, power consumption and integration density. Electrical interconnects (EIs) strongly limit these characteristics and a promising solution is given by replacing EIs with optical interconnects (OIs). The implementation of intra-chip and chip-to-chip OIs requires the use of photonic integrated circuit (PIC) technology. The integration of optical sources, waveguides and detectors forming a photonic interconnect layer on top of the CMOS circuitry provides bandwidth increase, immunity to electromagnetic (EM) noise and reduction in power consumption. This solution was investigated within this work, which focuses on the detector part. InP-based membrane photodetectors were realized on InP dies bonded on Si and CMOS wafers, on top of which passive Si and Si3N4 photonic circuitry had been defined. This approach combines the advantages of high quality Si-based passive circuits with the excellent properties of InP-based components for light generation and detection. The technology used for the InP device fabrication is compatible with wafer scale processing steps, assuring compatibility towards future generation electronic ICs. The major results of this work are summarized as follows: InP membrane couplers and detectors were successfully fabricated on Si and Si3N4 photonic circuits. Experimental results show working active and passive devices, namely: passive Si photonic components (waveguides, MMIs, (de)-multiplexers), InP membrane couplers, InP-based detectors and heterogeneously integrated multiwavelength receivers. A working laser-to-detector integrated optical link on Si was successfully demonstrated. This work was carried out with the support of the European project IST-PICMOS and of the Dutch Ministry of Economic Affairs through the Smartmix Memphis project