High Slew-Rate Adaptive Biasing Hybrid Envelope Tracking Supply Modulator for LTE Applications

abstract: As wireless communication enters smartphone era, more complicated communication technologies are being used to transmit higher data rate. Power amplifier (PA) has to work in back-off region, while this inevitably reduces battery life for cellphones. Various techniques have been reported to increase PA efficiency, such as envelope elimination and restoration (EER) and envelope tracking (ET). However, state of the art ET supply modulators failed to address high efficiency, high slew rate, and accurate tracking concurrently. In this dissertation, a linear-switch mode hybrid ET supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class-AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 V/µs to 93.4 V/µs and -87 V/µs to -152.5 V/µs respectively, dc gain from 45 dB to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power added efficiency (PAE) of 42.3% at 26.2 dBm for a 10 MHz 7.24 dB peak-to-average power ratio (PAPR) LTE signal and improves PAE by 8% at 6 dB back off from 26.2 dBm power amplifier (PA) output power with respect to fixed supply. With a 10 MHz 7.24 dB PAPR QPSK LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2 dBm PA output power, while with a 10 MHz 8.15 dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6% at 26 dBm PA output power without digital pre-distortion (DPD). The proposed supply modulator core circuit occupies 1.1 mm2 die area, and is fabricated in a 0.18 µm CMOS technology.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Agnostic envelope linearization of dynamically supplied power amplifiers for mobile terminals

This paper presents an envelope linearization technique to compensate for the nonlinear distortion of envelope tracking (ET) power amplifiers (PAs) for 5G new radio (NR) mobile terminals. The proposed envelope optimization (EOPT) method is agnostic of the nonlinear distortion generated in the envelope supply path and can compensate for the nonlinear distortion at the ET PA output without the need to monitor the output at the envelope tracking modulator (ETM). The linearization system in the envelope path is based on the envelope generalized memory polynomial (EGMP) behavioral model. Since the ETM output is not available, an iterative nonlinear least squares solution inspired in the deep deterministic policy gradient (DDPG) algorithm is proposed to extract the coefficients of the EGMP model. The EOPT method is validated on a system-on-chip (SoC) ET PA board designed for mobile terminal applications. Experimental results show the suitability of the proposed method to guarantee the linearity requirements (i.e., adjacent channel power ratio below -36 dBc) with 16.8% of power efficiency when operating the ET PA with 5G new radio test signals of 60 MHz bandwidth operating at 2.55 GHz (band 7). The linearization performance of the proposed EOPT method is comparable to the envelope leakage cancellation (ELC) approach (but saving the need for an analog to digital converter to monitor the ETM output), and can outperform a conventional I-Q digital predistorter based on the generalized memory polynomial (GMP) behavioral model.This research was funded by Huawei Technologies from July 2020 to August 2021; and supported in part by the project PID2020-113832RB-C21 funded by MCIN/AEI/10.13039/50110001103 and in part by the Government of Catalonia and the European Social Fund under Grant 2021-FI-B-137.Peer ReviewedPostprint (published version

Vidutinių dažnių 5G belaidžių tinklų galios stiprintuvų tyrimas

This dissertation addresses the problems of ensuring efficient radio fre-quency transmission for 5G wireless networks. Taking into account, that the next generation 5G wireless network structure will be heterogeneous, the device density and their mobility will increase and massive MIMO connectivity capability will be widespread, the main investigated problem is formulated – increasing the efficiency of portable mid-band 5G wireless network CMOS power amplifier with impedance matching networks. The dissertation consists of four parts including the introduction, 3 chapters, conclusions, references and 3 annexes. The investigated problem, importance and purpose of the thesis, the ob-ject of the research methodology, as well as the scientific novelty are de-fined in the introduction. Practical significance of the obtained results, defended state-ments and the structure of the dissertation are also included. The first chapter presents an extensive literature analysis. Latest ad-vances in the structure of the modern wireless network and the importance of the power amplifier in the radio frequency transmission chain are de-scribed in detail. The latter is followed by different power amplifier archi-tectures, parameters and their improvement techniques. Reported imped-ance matching network design methods are also discussed. Chapter 1 is concluded distinguishing the possible research vectors and defining the problems raised in this dissertation. The second chapter is focused around improving the accuracy of de-signing lumped impedance matching network. The proposed methodology of estimating lumped inductor and capacitor parasitic parameters is dis-cussed in detail provi-ding complete mathematical expressions, including a summary and conclusions. The third chapter presents simulation results for the designed radio fre-quency power amplifiers. Two variations of Doherty power amplifier archi-tectures are presented in the second part, covering the full step-by-step de-sign and simulation process. The latter chapter is concluded by comparing simulation and measurement results for all designed radio frequency power amplifiers. General conclusions are followed by an extensive list of references and a list of 5 publications by the author on the topic of the dissertation. 5 papers, focusing on the subject of the discussed dissertation, have been published: three papers are included in the Clarivate Analytics Web of Sci-ence database with a citation index, one paper is included in Clarivate Ana-lytics Web of Science database Conference Proceedings, and one paper has been published in unreferred international conference preceedings. The au-thor has also made 9 presentations at 9 scientific conferences at a national and international level.Dissertatio

A survey on RF and microwave doherty power amplifier for mobile handset applications

This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.Agencia Estatal de Investigación | Ref. TEC2017-88242-C3-2-RFundação para a Ciência e a Tecnologia | Ref. UIDP/50008/201

Broadband Class-J GaN Doherty Power Amplifier

This paper presents a broadband 3 GHz–3.7GHz class-J Doherty power amplifier exploiting second harmonic tuning in the output network. Furthermore, the output impedance inverter is eliminated and its effect is embedded in the main device’s output matching network, thus trading off among bandwidth, efficiency, and gain. The proposed amplifier adopts two 10W packaged GaN transistors, and it achieves in measurement 60–74%, and 46–50% drain efficiency at saturation and 6 dB output back-off, respectively, with a saturated output power of 43 dBm–44.2dBm and a small-signal gain of 10 dB–13 dB. The proposed DPA exhibits a simulated adjacent channel power ratio less than 30 dBc at 36dBm average output power when a 16-QAM modulation with 5 MHz bandwidth is applied to the 3.5 GHz carrier

Proceedings of the Second International Mobile Satellite Conference (IMSC 1990)

Presented here are the proceedings of the Second International Mobile Satellite Conference (IMSC), held June 17-20, 1990 in Ottawa, Canada. Topics covered include future mobile satellite communications concepts, aeronautical applications, modulation and coding, propagation and experimental systems, mobile terminal equipment, network architecture and control, regulatory and policy considerations, vehicle antennas, and speech compression

DESIGN OF A GAAS DISTRIBUTED AMPLIFIER WITH LC TRAPS BASED BROADBAND LINEARIZATION

Increasing the linearity of power amplifiers has been an important area of research because its signal integrity influences the performance of the entire transreceiver system and there are strict regulatory requirements on them. Due to the nonlinear behaviour of power amplifiers, third order intermodulation products are generated close to the desired signals and cannot be removed by filters. Increasing linearity will help bring these distortion products closer to the noise floor. However, it is not an easy task to increase linearity without trading off output power. To maintain the same level of output power generated but with higher linearity, many techniques, each with its own pros and cons, have been implemented to linearize an amplifier. Techniques involving feedback are seriously limited in terms of modulation bandwidth whereas methods such as predistortion and feedforward are very difficult to implement. This project seeks to use a simple method of placing terminations directly to the distributed amplifier (DA), making it a device level linearization technique and can be used in addition to the other system level techniques mentioned earlier. To increase linearity over a broad bandwidth of 0.5 to 3.0 GHz, this work proposes using low impedance terminations (LC traps) at the envelope frequency to the input and output of several distributed amplifiers. This research is novel since this is the first time broadband improvement in linearity has been demonstrated using the LC trap method. Two design iterations were completed (first design iteration has four variants to test the output trap while the second design iteration has three variants to test the input trap). The low impedance terminations are implemented using inductor-capacitor networks that are external to the monolithic microwave integrated circuit (MMIC). Design and layout of the DAs were carried out using Agilent’s Advanced Design System (ADS). Results show that placing the traps at the output of the DA does not truly affect the linearity of the device at lower frequencies but provide an improvement of 1.6 dB and 3.4 dB to the third-order output intercept point (OIP3) at 2.5 GHz and 3.0 GHz, respectively. With traps at the input, measurement results at -5 dBm input power, viii 1.375 V base bias (61 mA total collector current) and 10 MHz two tone spacing show a broadband improvement throughout the band (0.5 GHz to 3.0 GHz) of 3.3 dB to 7.4 dB in OIP3. Furthermore, the OIP3 is increased to 19.2 dB above P1dB. Results show that the improvement in OIP3 comes without lowering gain, return loss or P1dB and without causing any stability problems

Advanced High Efficiency and Broadband Power Amplifiers Based on GaN HEMT for Wireless Applications

In advanced wireless communication systems, a rapid increase in the mobile data traffic and broad information bandwidth requirement can lead to the use of complex spectrally efficient modulation schemes such as orthogonal frequency-division multiplexing (OFDM). Generally, complex non-constant envelope modulated signals have very high peak-to-average ratios (PAPR). Doherty Power Amplifier (DPA) is the most commonly used power amplifier (PA) architecture for meeting high efficiency requirement in advanced communication systems, in the presence of high PAPR signals. However, limited bandwidth of the conventional DPA is often identified as a bottleneck for widespread deployment in base-station application for multi-standard communication signals. The research in this thesis focuses on the development of new designs to overcome the bandwidth limitations of a conventional PA. In particular, the bandwidth limitation factors of a conventional DPA architecture are studied. Moreover, a novel design technique is proposed for DPA’s bandwidth extension. In the first PA design, limited bandwidth and linearity problems are addressed simultaneously. For this purpose, a new Class-AB PA with extended bandwidth and improved linearity is presented for LTE 5 W pico-cell base-station over a frequency range of 1.9–2.5 GHz. A two-tone load/source-pull and bias point optimization techniques are used to extract the sweet spots for optimum efficiency and linearity from the 6 W Cree GaN HEMT device for the whole frequency band. The realized prototype presented saturated PAE higher than 60%, a power gain of 13 dB and an average output power of 36.5 dBm over the desired bandwidth. The proposed PA is also characterized by QAM-256 and LTE input communication signals for linearity characterization. Measured ACPRs are lower than -40 dBc for an input power of 17 dBm. The documented results indicate that the proposed Class-AB architecture is suitable for pico-cell base-station application. In the second PA design, an inherent bandwidth limitation of Class-F power amplifier forced by the improper load harmonics terminations at multiple harmonics is investigated and analyzed. It is demonstrated that the impedance tuning of the second and third harmonics at the drain terminal of a transistor is crucial to achieve a broadband performance. The effect of harmonics terminations on power amplifier’s bandwidth up to fourth harmonics is investigated. The implemented broadband Class-F PA achieved maximum saturated drain efficiency 60-77%, and 10 W output power throughout (1.1-2.1 GHz) band. The simulated and measured results verify that the presented Class-F PA is suitable for a high-efficiency system application in wireless communications over a wide range of frequencies. In the third PA design, a single- and dual-input DPA for LTE application in the 3.5 GHz frequency band are presented and compared. The main goal of this study is to improve the performance of gallium–nitride (GaN) Doherty transmitters over a wide bandwidth in the 3.5 GHz frequency band. For this purpose, the linearity-efficiency trade-off for the two proposed architectures is discussed in detail. Simulated results demonstrate that the single- and dual-input DPA exhibited a peak drain efficiency (DE) of 72.4% and 77%, respectively. Both the circuits showed saturated output power more than 42.9 dBm throughout the designed band. Saturated efficiency, gain and bandwidth of dual-input DPA are higher than that of the single-input DPA. On the other side, dual-input DPA linearity is worse as compared to the single-input DPA. In the last PA design, a novel design methodology for ultra-wide band DPA is presented. The bandwidth limitation factors of the conventional Doherty amplifier are discussed on the ground of broadband matching with impedance variation. To extend the DPA bandwidth, three different methods are used such as post-matching, low impedance transformation ratio and the optimization of offset line for wide bandwidth in the proposed design. The proposed Doherty power amplifier was designed and realized based on two 10 W GaN HEMT devices from Cree Inc. The measured results exhibited 42-57% of efficiency at the 6-dB back-off and saturated output power ranges from 41.5 to 43.1 dBm in the frequency range of 1.15 to 2.35 GHz (68.5% fractional bandwidth). Moreover, less than -25 dBc ACPRs are measured at 42 dBm peak output power throughout the designed band. In a nutshell, all power amplifiers presented in this thesis are suitable for wideband operation and their performances are satisfying the required operational standard. Therefore, this thesis has a significant contribution in the domain of high efficiency and broadband power amplifiers