Dynamic Voltage Scaling Aware Delay Fault Testing

The application of Dynamic Voltage Scaling (DVS) to reduce energy consumption may have a detrimental impact on the quality of manufacturing tests employed to detect permanent faults. This paper analyses the influence of different voltage/frequency settings on fault detection within a DVS application. In particular, the effect of supply voltage on different types of delay faults is considered. This paper presents a study of these problems with simulation results. We have demonstrated that the test application time increases as we reduce the test voltage. We have also shown that for newer technologies we do not have to go to very low voltage levels for delay fault testing. We conclude that it is necessary to test at more than one operating voltage and that the lowest operating voltage does not necessarily give the best fault cover

Towards Structural Testing of Superconductor Electronics

Many of the semiconductor technologies are already\ud facing limitations while new-generation data and\ud telecommunication systems are implemented. Although in\ud its infancy, superconductor electronics (SCE) is capable of\ud handling some of these high-end tasks. We have started a\ud defect-oriented test methodology for SCE, so that reliable\ud systems can be implemented in this technology. In this\ud paper, the details of the study on the Rapid Single-Flux\ud Quantum (RSFQ) process are presented. We present\ud common defects in the SCE processes and corresponding\ud test methodologies to detect them. The (measurement)\ud results prove that we are able to detect possible random\ud defects for statistical purposes in yield analysis. This\ud paper also presents possible test methodologies for RSFQ\ud circuits based on defect oriented testing (DOT)

Investigation into voltage and process variation-aware manufacturing test

Increasing integration and complexity in IC design provides challenges for manufacturing testing. This thesis studies how process and supply voltage variation influence defect behaviour to determine the impact on manufacturing test cost and quality. The focus is on logic testing of static CMOS designs with respect to two important defect types in deep submicron CMOS: resistive bridges and full opens. The first part of the thesis addresses testing for resistive bridge defects in designs with multiple supply voltage settings. To enable analysis, a fault simulator is developed using a supply voltage-aware model for bridge defect behaviour. The analysis shows that for high defect coverage it is necessary to perform test for more than one supply voltage setting, due to supply voltage-dependent behaviour. A low-cost and effective test method is presented consisting of multi-voltage test generation that achieves high defect coverage and test set size reduction without compromise to defect coverage. Experiments on synthesised benchmarks with realistic bridge locations validate the proposed method.The second part focuses on the behaviour of full open defects under supply voltage variation. The aim is to determine the appropriate value of supply voltage to use when testing. Two models are considered for the behaviour of full open defects with and without gate tunnelling leakage influence. Analysis of the supply voltage-dependent behaviour of full open defects is performed to determine if it is required to test using more than one supply voltage to detect all full open defects. Experiments on synthesised benchmarks using an extended version of the fault simulator tool mentioned above, measure the quantitative impact of supply voltage variation on defect coverage.The final part studies the impact of process variation on the behaviour of bridge defects. Detailed analysis using synthesised ISCAS benchmarks and realistic bridge model shows that process variation leads to additional faults. If process variation is not considered in test generation, the test will fail to detect some of these faults, which leads to test escapes. A novel metric to quantify the impact of process variation on test quality is employed in the development of a new test generation tool, which achieves high bridge defect coverage. The method achieves a user-specified test quality with test sets which are smaller than test sets generated without consideration of process variation

Fault modelling and accelerated simulation of integrated circuits manufacturing defects under process variation

As silicon manufacturing process scales to and beyond the 65-nm node, process variation can no longer be ignored. The impact of process variation on integrated circuit performance and power has received significant research input. Variation-aware test, on the other hand, is a relatively new research area that is currently receiving attention worldwide.Research has shown that test without considering process variation may lead to loss of test quality. Fault modelling and simulation serve as a backbone of manufacturing test. This thesis is concerned with developing efficient fault modelling techniques and simulation methodologies that take into account the effect of process variation on manufacturing defects with particular emphasis on resistive bridges and resistive opens.The first contribution of this thesis addresses the problem of long computation time required to generate logic fault of resistive bridges under process variation by developing a fast and accurate modelling technique to model logic fault behaviour of resistive bridges.The new technique is implemented by employing two efficient voltage calculation algorithms to calculate the logic threshold voltage of driven gates and critical resistance of a fault-site to enable the computation of bridge logic faults without using SPICE. Simulation results show that the technique is fast (on average 53 times faster) and accurate (worst case is 2.64% error) when compared with HSPICE. The second contribution analyses the complexity of delay fault simulation of resistive bridges to reduce the computation time of delay fault when considering process variation. An accelerated delay fault simulation methodology of resistive bridges is developed by employing a three-step strategy to speed up the calculation of transient gate output voltage which is needed to accurately compute delay faults. Simulation results show that the methodology is on average 17.4 times faster, with 5.2% error in accuracy, when compared with HSPICE. The final contribution presents an accelerated simulation methodology of resistive opens to address the problem of long simulation time of delay fault when considering process variation. The methodology is implemented by using two efficient algorithms to accelerate the computation of transient gate output voltage and timing critical resistance of an open fault-site. Simulation results show that the methodology is on average up to 52 times faster than HSPICE, with 4.2% error in accuracy

Test Quality Analysis and Improvement for an Embedded Asynchronous FIFO

Embedded First-InFirst-Out (FIFO) memories are increasingly used in many IC designs.We have created a new full-custom embedded FIFO module withasynchronous read and write clocks, which is at least a factor twosmaller and also faster than SRAM-based and standard-cell-basedcounterparts. The detection qualities of the FIFO test for bothhard and weak resistive shorts and opens have been analyzed by anIFA-like method based on analog simulation. The defect coverage ofthe initial FIFO test for shorts in the bit-cell matrix has beenimproved by inclusion of an additional data background andlow-voltage testing; for low-resistant shorts, 100% defect coverageis obtained. The defect coverage for opens has been improved by anew test procedure which includes waitingperiods

Comparing the impact of power supply voltage on CMOS-and FinFET-based SRAMs in the presence of resistive defects

CMOS technology scaling has reached its limit at the 22 nm technology node due to several factors including Process Variations (PV), increased leakage current, Random Dopant Fluctuation (RDF), and mainly the Short-Channel Effect (SCE). In order to continue the miniaturization process via technology down-scaling while preserving system reliability and performance, Fin Field-Effect Transistors (FinFETs) arise as an alternative to CMOS transistors. In parallel, Static Random-Access Memories (SRAMs) increasingly occupy great part of Systems-on-Chips’ (SoCs) silicon area, making their reliability an important issue. SRAMs are designed to reach densities at the limit of the manufacturing process, making this component susceptible to manufacturing defects, including the resistive ones. Such defects may cause dynamic faults during the circuits’ lifetime, an important cause of test escape. Thus, the identification of the proper faulty behavior taking different operating conditions into account is considered crucial to guarantee the development of more suitable test methodologies. In this context, a comparison between the behavior of a 22 nm CMOS-based and a 20 nm FinFET-based SRAM in the presence of resistive defects is carried out considering different power supply voltages. In more detail, the behavior of defective cells operating under different power supply voltages has been investigated performing SPICE simulations. Results show that the power supply voltage plays an important role in the faulty behavior of both CMOS- and FinFET-based SRAM cells in the presence of resistive defects but demonstrate to be more expressive when considering the FinFET-based memories. Studying different operating temperatures, the results show an expressively higher occurrence of dynamic faults in FinFET-based SRAMs when compared to CMOS technology

A linearly controlled direct-current power source for high-current inductive loads in a magnetic suspension wind tunnel

The NASA Langley 6 inch magnetic suspension and balance system (MSBS) requires an independently controlled bidirectional DC power source for each of six positioning electromagnets. These electromagnets provide five-degree-of-freedom control over a suspended aerodynamic test model. Existing power equipment, which employs resistance coupled thyratron controlled rectifiers as well as AC to DC motor generator converters, is obsolete, inefficient, and unreliable. A replacement six phase bidirectional controlled bridge rectifier is proposed, which employs power MOSFET switches sequenced by hybrid analog/digital circuits. Full load efficiency is 80 percent compared to 25 percent for the resistance coupled thyratron system. Current feedback provides high control linearity, adjustable current limiting, and current overload protection. A quenching circuit suppresses inductive voltage impulses. It is shown that 20 kHz interference from positioning magnet power into MSBS electromagnetic model position sensors results predominantly from capacitively coupled electric fields. Hence, proper shielding and grounding techniques are necessary. Inductively coupled magnetic interference is negligible

Fault simulation for structural testing of analogue integrated circuits

In this thesis the ANTICS analogue fault simulation software is described which provides a statistical approach to fault simulation for accurate analogue IC test evaluation. The traditional figure of fault coverage is replaced by the average probability of fault detection. This is later refined by considering the probability of fault occurrence to generate a more realistic, weighted test metric. Two techniques to reduce the fault simulation time are described, both of which show large reductions in simulation time with little loss of accuracy. The final section of the thesis presents an accurate comparison of three test techniques and an evaluation of dynamic supply current monitoring. An increase in fault detection for dynamic supply current monitoring is obtained by removing the DC component of the supply current prior to measurement

Localization and electrical characterization of interconnect open defects

A technique for extracting the electrical and topological parameters of open defects in process monitor lines is presented. The procedure is based on frequency-domain measurements performed at both end points of the line. The location as well as the resistive value of the open defect are derived from attenuation and phase shift measurements. The characteristic defect-free impedance of the line and its propagation constant are considered to be unknowns, and their values are also derived from the above measurements. In this way, the impact of process parameter variations on the proposed model is diminished. The experimental setup required to perform the characterization measurements and a simple graphical procedure to determine the defect and line parameters are presented. Experimental results show a good agreement between the predicted location of the open and its real location, found by optical beam induced resistance change inspection. Errors smaller than 2% of the total length of the line have been observed in the experiments.Postprint (published version

Fault Analysis And Test For Bridge Defect In Resistive Random Access Memory

Resistive Random-Access Memory (ReRAM) is one of the potential candidates of emerging semiconductor memory to replace the conventional memory technologies.Besides, ReRAM offers many attractive advantages, such as non-volatile, scalable, low power consumption, and fast data access. Due to the infancy stage of this emerging memory, ReRAM is prone to have bridge defects that could lead to test escape and reliability issues. Moreover, with the lack of electrical model for ReRAM, this research presents an electrical ReRAM model that was designed with SILVACO Electronic Design Automation (EDA) software. All ReRAM elements designed used 22nm Complementary Metal Oxide Semiconductor (CMOS) transistors and a novel non- CMOS device, known as memristor, as the memory cell array. The optimal memristor model that had been proposed by D. Biolek was chosen among three published memristor SPICE models. The selection was made based on the performance analysis.Furthermore, simulation of 2x2 cell ReRAM was executed in order to prove the functionality of the design. The designed ReRAM model functioned as desired based on the simulation results. In addition, the defective behaviors of the faulty ReRAM that were impacted by the three types of bridge defects, (bridge between wordlines; BW, bridge between bitlines; BB and bridge between bitlines and wordlines; BBW) had been studied in this work. The faulty ReRAM model was established by injecting the defects into the designed electrical ReRAM model. As this ReRAM employed a non-CMOS device as its memory cells, the defect that occurred might behave differently than that happens in conventional memories. This could cause the faulty ReRAM to escape from the available memory test. The simulation of the faulty ReRAM model showed that the bridge defects had been due to the Undefined State Faults (USFs) during reading operation. Besides, any faulty in ReRAM caused by USF makes setting the cell to the desired logical value a challenging task, and this fault is difficult to be detected. Hence, a new Design-for-Testability (DfT) technique was proposed to detect these USFs. This technique, known as Adaptive Sensing Read Voltage (ASRV), had been developed based on the mechanism of memristor, as well as the function of sense amplifier. Apart from that, a slight circuit modification was done to implement the DfT circuitry. Based on the simulation results during the DfT implementation, the proposed DfT technique successfully detects the USFs that occurred when 0Ω ≤ RBW ≤ 50Ω for BW injection, 36Ω ≤ RBB ≤ 372Ω for BB injection and 140Ω ≤ RBBW ≤ 210Ω for BBW injection.However, this DfT technique might not suitable for BBW injection as it might kill the healthy cell