Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

abstract: Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm[superscript 2] and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate

Design and simulation of a smart bottle with fill-level sensing based on oxide TFT technology

Packaging is an important element responsible for brand growth and one of the main rea-sons for producers to gain competitive advantages through technological innovation. In this re-gard, the aim of this work is to design a fully autonomous electronic system for a smart bottle packaging, being integrated in a European project named ROLL-OUT. The desired application for the smart bottle is to act as a fill-level sensor system in order to determine the liquid content level that exists inside an opaque bottle, so the consumer can exactly know the remaining quantity of the product inside. An in-house amorphous indium–gallium–zinc oxide thin-film transistor (a-IGZO TFT) model, previously developed, was used for circuit designing purposes. This model was based in an artificial neural network (ANN) equivalent circuit approach. Taking into account that only n-type oxide TFTs were used, plenty of electronic building-blocks have been designed: clock generator, non-overlapping phase generator, a capacitance-to-voltage converter and a comparator. As it was demonstrated by electrical simulations, it has been achieved good functionality for each block, having a final system with a power dissipation of 2.3 mW (VDD=10 V) not considering the clock generator. Four printed circuit boards (PCBs) have been also designed in order to help in the testing phase. Mask layouts were already designed and are currently in fabrication, foreseeing a suc-cessful circuit fabrication, and a major step towards the design and integration of complex trans-ducer systems using oxide TFTs technology

On variability and reliability of poly-Si thin-film transistors

In contrast to conventional bulk-silicon technology, polysilicon (poly-Si) thin-film transistors (TFTs) can be implanted in flexible substrate and can have low process temperature. These attributes make poly-Si TFT technology more attractive for new applications, such as flexible displays, biosensors, and smart clothing. However, due to the random nature of grain boundaries (GBs) in poly-Si film and self-heating enhanced negative bias temperature instability (NBTI), the variability and reliability of poly-Si TFTs are the main obstacles that impede the application of poly-Si TFTs in high-performance circuits. The primary focus of this dissertation is to develop new design methodologies and modeling techniques for facilitating new applications of poly-Si TFT technology. In order to do that, a physical model is first presented to characterize the GB-induced transistor threshold voltage (V th)variations considering not only the number but also the position and orientation of each GB in 3-D space. The fast computation time of the proposed model makes it suitable for evaluation of GB-induced transistor Vthvariation in the early design phase. Furthermore, a self-consistent electro-thermal model that considers the effects of device geometry, substrate material, and stress conditions on NBTI is proposed. With the proposed modeling methodology, the significant impacts of device geometry, substrate, and supply voltage on NBTI in poly-Si TFTs are shown. From a circuit design perspective, a voltage programming pixel circuit is developed for active-matrix organic light emitting diode (AMOLED) displays for compensating the shift of Vth and mobility in driver TFTs as well as compensating the supply voltage degradation. In addition, a self-repair design methodology is proposed to compensate the GB-induced variations for liquid crystal displays (LCDs) and AMOLED displays. Based on the simulation results, the proposed circuit can decrease the required supply voltage by 20% without performance and yield degradation. In the final section of this dissertation, an optimization methodology for circuit-level reliability tests is explored. To effectively predict circuit lifetime, accelerated aging (i.e. elevated voltage and temperature) is commonly applied in circuit-level reliability tests, such as constant voltage stress (CVS) and ramp voltage stress (RVS) tests. However, due to the accelerated aging, shifting of dominant degradation mechanism might occur leading to the wrong lifetime prediction. To get around this issue, we proposed a technique to determine the proper stress range for accelerated aging tests

Design of LCOS microdisplay backplanes for projection applications

De evolutie van licht emitterende diodes (LED) heeft ervoor gezorgd dat het op dit moment interessant wordt om deze componenten als lichtbron te gebruiken in projectiesystemen. LED’s hebben belangrijke voordelen vergeleken met klassieke booglampen. Ze zijn compact, ze hebben een veel grotere levensduur en ogenblikkelijke schakeltijden, ze werken op lage spanningen, etc. LED’s zijn smalbandig en kunnen een groterekleurenbereik realiseren. Ze hebben momenteel echter een beperkte helderheid. Naast de lichtbron is het type van de lichtklep ook bepalend voor de kwaliteit van een projectiesysteem. Er bestaan verschillende lichtkleptechnologieën waaronder die van de reflectieve LCOS-panelen. Deze lichtkleppen kunnen zeer hoge resoluties hebben en wordenvaak gebruikt in kwalitatieve, professionele projectiesystemen. LED’s zijn echter totaal verschillend van booglampen. Ze hebben een andere vorm, package, stralingspatroon, aansturing, fysische en thermische eigenschappen, etc. Hoewel er een twintigtal optische architecturen bekend zijn voor reflectieve beeldschermen (met een booglamp als lichtbron), zijn ze niet geschikt voor LED-projectoren en moeten nieuwe optische architecturen en een elektronische aansturing ontwikkeld worden. In dit doctoraat werd er hieromtrent onderzoek gedaan. Er werd uiteindelijk een driekleurenprojector (R, G, B) met een efficiënt LED-belichtingssysteem gebouwd met twee LCOS-lichtkleppen. Deze LEDprojector heeft superieure eigenschappen (zeer lange levensduur, beeldkwaliteit, etc.) en een matige lichtopbrengst

Thin-Film Transistor Integration for Biomedical Imaging and AMOLED Displays

Thin film transistor (TFT) backplanes are being continuously researched for new applications such as active-matrix organic light emitting diode (AMOLED) displays, sensors, and x-ray imagers. However, the circuits implemented in presently available fabrication technologies including poly silicon (poly-Si), hydrogenated amorphous silicon (a-Si:H), and organic semiconductor, are prone to spatial and/or temporal non-uniformities. While current-programmed active matrix (AM) can tolerate mismatches and non-uniformity caused by aging, the long settling time is a significant limitation. Consequently, acceleration schemes are needed and are proposed to reduce the settling time to 20 µs. This technique is used in the development of a pixel circuit and system for biomedical imager and sensor. Here, a metal-insulator-semiconductor (MIS) capacitor is adopted for adjustment and boost of the circuit gain. Thus, the new pixel architecture supports multi-modality imaging for a wide range of applications with various input signal intensities. Also, for applications with lower current levels, a fast current-mode line driver is developed based on positive feedback which controls the effect of the parasitic capacitance. The measured settling time of a conventional current source is around 2 ms for a 100-nA input current and 200-pF parasitic capacitance whereas it is less than 4 μs for the driver presented here. For displays needed in mobile devices such as cell phones and DVD players, another new driving scheme is devised that provides for a high temporal stability, low-power consumption, high tolerance of temperature variations, and high resolution. The performance of the new driving scheme is demonstrated in a 9-inch fabricated display intended for DVD players. Also, a multi-modal imager pixel circuit is developed using this technique to provide for gain-adjustment capability. Here, the readout operation is not destructive, enabling the use of low-cost readout circuitry and noise reduction techniques. In addition, a highly stable and reliable driving scheme, based on step calibration is introduced for high precision displays and imagers. This scheme takes advantage of the slow aging of the electronics in the backplane to simplify the drive electronics. The other attractive features of this newly developed driving scheme are its simplicity, low-power consumption, and fast programming critical for implementation of large-area and high-resolution active matrix arrays for high precision

Flat Panel Displays in an Automotive Environment

A study was made of the field of flat panel displays, and their potential application in an automotive environment. Using contemporary display technology, semiconductors and software, a model was developed to fit an existing automotive instrumentation application. The resulting model was critically assessed in respect to the demands of such an application in respect to existing instrumentation methods. The viability and suitability of implementing such a design are discussed as well as its ability to be intrinsically portable and adaptable

Design and application of a low-cost, easy-to-build, non-invasive, pressure-controlled ventilator for pediatric use in low-resource countries.

Treballs Finals de Grau d'Enginyeria Biomèdica. Facultat de Medicina i Ciències de la Salut. Universitat de Barcelona. Curs: 2022-2023. Tutor/Director: Ramon Farré VenturaThe aim of this project was to design and apply a low-cost, easy-to-build, non-invasive, pressure-controlled ventilator for pediatric use in low-resource countries. The ventilator was built using off-the-shelf components and an open-source design, with a total cost of less than €200. It is noteworthy that this ventilator is an adaptation of a previous project that was designed for adult use. In order to adapt the previous project to a pediatric use, a method to increase the respiratory rate was implemented, as children have a higher respiratory rate compared to adults, and this has been through the incorporation of a valve. The prototype was evaluated in a bench test using an active patient simulator, which modeled the respiratory mechanics of patients with different levels of obstructive/restrictive diseases. Four respiratory systems were set for testing the ventilator, mimicking a patient with mild disease, a purely obstructive patient, a purely restrictive patient and a patient with both obstruction and restriction. The device was able to function effectively at high frequencies and was able to resolve the issue of inadequate time for breaths at high frequencies. The results of this project demonstrate that it is possible to create a low-cost, easy-to-build, non-invasive, pressure-controlled ventilator for pediatric use in low-resource countries. The device is easy to construct, utilizes minimal complex components and can be replicated using the open-source design and materials. As a future improvement, the ventilator could be developed to also function as a support ventilator, detecting when the patient is attempting to inhale and initiating ventilation automatically when a predefined threshold pressure is exceeded

Vertical Thin Film Transistors for Large Area Electronics

The prospect of producing nanometer channel-length thin film transistors (TFTs) for active matrix addressed pixelated arrays opens up new high-performance applications in which the most amenable device topology is the vertical thin film transistor (VTFT) in view of its small area. The previous attempts at fabricating VTFTs have yielded devices with a high drain leakage current, a low ON/OFF current ratio, and no saturation behaviour in the output current at high drain voltages, all induced by short channel effects. To overcome these adversities, particularly dominant as the channel length approaches the nano-scale regime, the reduction of the gate dielectric thickness is essential. However, the problems with scaling the gate dielectric thickness are the high gate leakage current and early dielectric breakdown of the insulator, deteriorating the device performance and reliability. A novel ultra-thin SiNx film suitable for the application as the gate dielectric of short channel TFTs and VTFTs is developed. The deposition is performed in a standard 13.56MHz PECVD system with silane and ammonia precursor gasses diluted in nitrogen. The deposited 50nm SiNx films demonstrate excellent electrical characteristics in terms of a leakage current of 0.1 nA/cm² and a breakdown electric field of 5.6MV/cm. Subsequently, the state of the art performances of 0.5µm channel length VTFTs with 50 and 30nm thick SiNx gate dielectrics are presented in this thesis. The transistors exhibit ON/OFF current ratios over 10^9, the subthreshold slopes as sharp as 0.23 V/dec, and leakage currents in the fA range. More significantly, a high associated yield is obtained for the fabrication of these devices on 3-inch rigid substrates. Finally, to illustrate the tremendous potential of the VTFT for the large area electronics, a 2.2-inch QVGA AMOLD display with in-pixel VTFT-based driver circuits is designed and fabricated. An outstanding value of 56% compared to the 30% produced by conventional technology is achieved as the aperture ratio of the display. Moreover, the initial measurement results reveal an excellent uniformity of the circuit elements.1 yea

Holographic enhanced remote sensing system

The Holographic Enhanced Remote Sensing System (HERSS) consists of three primary subsystems: (1) an Image Acquisition System (IAS); (2) a Digital Image Processing System (DIPS); and (3) a Holographic Generation System (HGS) which multiply exposes a thermoplastic recording medium with sequential 2-D depth slices that are displayed on a Spatial Light Modulator (SLM). Full-parallax holograms were successfully generated by superimposing SLM images onto the thermoplastic and photopolymer. An improved HGS configuration utilizes the phase conjugate recording configuration, the 3-SLM-stacking technique, and the photopolymer. The holographic volume size is currently limited to the physical size of the SLM. A larger-format SLM is necessary to meet the desired 6 inch holographic volume. A photopolymer with an increased photospeed is required to ultimately meet a display update rate of less than 30 seconds. It is projected that the latter two technology developments will occur in the near future. While the IAS and DIPS subsystems were unable to meet NASA goals, an alternative technology is now available to perform the IAS/DIPS functions. Specifically, a laser range scanner can be utilized to build the HGS numerical database of the objects at the remote work site