FVF-Based Low-Dropout Voltage Regulator with Fast Charging/Discharging Paths for Fast Line and Load Regulation

A new internally compensated low drop-out voltage regulator based on the cascoded flipped voltage follower is presented in this paper. Adaptive biasing current and fast charging/discharging paths have been added to rapidly charge and discharge the parasitic capacitance of the pass transistor gate, thus improving the transient response. The proposed regulator was designed with standard 65-nm CMOS technology. Measurements show load and line regulations of 433.80 μV/mA and 5.61 mV/V, respectively. Furthermore, the output voltage spikes are kept under 76 mV for 0.1 mA to 100 mA load variations and 0.9 V to 1.2 V line variations with rise and fall times of 1 μs. The total current consumption is 17.88 μA (for a 0.9 V supply voltage).Ministerio de Economía y Competitividad TEC2015-71072-C3-3-RConsejería de Economía, Innovación y Ciencia. Junta de Andalucía P12-TIC-186

Current Feedback-Based High Load Current Low Drop-Out Voltage Regulator in 65-nm CMOS Technology

The motivation for this paper was to design a current feedback-based high load current, low drop-out (LDO) voltage regulator. A bandgap voltage reference (BGR) was also designed in conjunction with the LDO to simulate realistic environments. The schematic was designed with Cadence Virtuoso Schematic XL, using the Taiwan Semiconductor Manufacturing Company (TSMC) 65-nm CMOS library, used for Internet of Things (IoT) System on Chip (SoC) applications. The proposed capacitor-less LDO with BGR provided an average temperature coefficient (TC) of 13.34 ppm/℃ within the range of -40 to 125 ℃. This was in accordance with military standards to gain a higher stability and power supply rejection ratio (PSRR). The proposed capacitor-less LDO also achieved a 200 mA load current with an error percentage of 0.246% and a -21.47 dB PSRR at 100 KHz with a current based structure. This thesis concluded with the application of capacitor-less LDO in medical IoT devices, followed by the future of medical device development

Addressing On-Chip Power Conversion and Dissipation Issues in Many-Core System-on-a-Chip based on Conventional Silicon and Emerging Nanotechnologies

Title from PDF of title page viewed August 27, 2018Dissertation advisor: Masud H ChowdhuryVitaIncludes bibliographical references (pages 158-163)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2017Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.Introduction -- Background and literature review -- Fully integrated on-chip switching voltage regulator -- Hybrid LDO voltage regulator based on cascaded second order multiple feedback loop -- Single and dual output two-stage on-chip power management system -- Sleep transistor design using double-gate FDSOI -- Subthreshold region sleep transistor design -- Conclusio

Design of a Low Power External Capacitor-Less Low-Dropout Regulator with Gain-Compensated Error Amplifier

This thesis introduces a gain-compensated external capacitor-less low-dropout voltage regulator with total 5.7 uA quiescent current at all load conditions. The two-stage gain-compensated error amplifier is implemented with a cross-couple pair negative resistor to make the LDO achieve higher gain (> 50 dB) with very low bias current (< 1.3 uA). The LDO can achieve 52 dB loop gain at no load condition, 64 dB at 1 mA and 54 dB at 100 mA load. During transients (0 A to 100 mA) the undershoot is optimized to 98.6 mV with 100 ns rising and falling time through a differentiator circuit to boost the LDO’s transient response. The phase margin of the proposed LDO is 55◦ at 1 mA and 79.27◦ at max load (100 mA). Figure of merit (FOM) of this work is 2.79 fs which is very small

Full On-chip low dropout voltage regulator with an enhanced transient response for low power systems

A full on chip low Dropout Voltage Regulator (LDO) with fast transient response and small capacitor compensation circuit is proposed. The novel technique is implemented to detect the variation voltage at the output of LDO and enable the proposed fast detector amplifier (FDA) to improve load transient response of 50mA load step. The large external capacitor used in Conventional LDO Regulators is removed allowing for greater power system integration for system-on-chip (SoC) applications. The 1.6-V Full On-Chip LDO voltage regulator with a power supply of 1.8 V was designed and simulated in the 0.18µm CMOS technology, consuming only 14 µA of ground current with a fast settling-time LNR(Line Regulation) and LOR(Load regulation) of 928ns and 883ns respectively while the rise and fall times in LNR and LOR is 500ns

Design of Analog CMOS Circuits for Batteryless Implantable Telemetry Systems

A wireless biomedical telemetry system is a device that collects biomedical signal measurements and transmits data through wireless RF communication. Testing medical treatments often involves experimentation on small laboratory animals, such as genetically modified mice and rats. Using batteries as a power source results in many practical issues, such as increased size of the implant and limited operating lifetime. Wireless power harvesting for implantable biomedical devices removes the need for batteries integrated into the implant. This will reduce device size and remove the need for surgical replacement due to battery depletion. Resonant inductive coupling achieves wireless power transfer in a manner modelled by a step down transformer. With this methodology, power harvesting for an implantable device is realized with the use of a large primary coil external to the subject, and a smaller secondary coil integrated into the implant. The signal received from the secondary coil must be regulated to provide a stable direct current (DC) power supply, which will be used to power the electronics in the implantable device. The focus of this work is on development of an electronic front-end for wireless powering of an implantable biomedical device. The energy harvesting front-end circuit is comprised of a rectifier, LDO regulator, and a temperature insensitive voltage reference. Physical design of the front-end circuit is developed in 0.13um CMOS technology with careful attention to analog layout issues. Post-layout simulation results are presented for each sub-block as well as the full front-end structure. The LDO regulator operates with supply voltages in the range of 1V to 1.5V with quiescent current of 10.5uA The complete power receiver front-end has a power conversion efficiency of up to 29%

Efficiency Improvement of LDO Output Based Linear Regulator With Supercapacitor Energy Recovery – A versatile new technique with an example of a 5V to 1.5V version

Supercapacitors are used in various industrial applications and the supercapacitors technology is gradually progressing into a mature state. Common applications of supercapacitors are in electric vehicles, hybrid electric vehicles, uninterruptible power supply (UPS) and in portable devices such as cellular phones and laptops. The capacitance values range from fractional Farads to few thousand Farads and their continuos DC voltage ratings are from 2V to 6V. At University of Waikato, a team works on using supercapacitors for improving the efficiency of linear voltage regulators. In particular, this patented technique aims at combining off the shelfs LDO ICs and a supercapacitor array for improving end to end efficiency of linear regulator. My work is aimed at developing the theoretical background and designing prototype circuitry for a voltage regulator for the case of unregulated input supply is more than 3 times of the minimum input voltage requirement of the LDO which is applicable for a 5V to 1.5V regulator. Experimental results are indicated with future suggestions for improvement

Analysis on Supercapacitor Assisted Low Dropout (SCALDO) Regulators

State-of-the-art electronic systems employ three fundamental techniques for DC-DC converters: (a) switch-mode power supplies (SMPS); (b) linear power supplies; (c) switched capacitor (charge pump) converters. In practical systems, these three techniques are mixed to provide a complex, but elegant, overall solution, with energy efficiency, effective PCB footprint, noise and transient performance to suit different electronic circuit blocks. Switching regulators have relatively high end-to-end efficiency, in the range of 70 to 93%, but can have issues with output noise and EMI/RFI emissions. Switched capacitor converters use a set of capacitors for energy storage and conversion. In general, linear regulators have low efficiencies in the range 30 to 60%. However, they have outstanding output characteristics such as low noise, excellent transient response to load current fluctuations, design simplicity and low cost design which are far superior to SMPS. Given the complex situation in switch-mode converters, low dropout (LDO) regulators were introduced to address the equirements of noise-sensitive and fast transient loads in portable devices. A typical commercial off-the-shelf LDO has its input voltage slightly higher than the desired regulated output for optimal efficiency. The approximate efficiency of a linear regulator, if the power consumed by the control circuits is negligible, can be expressed by the ratio of Vo/Vin. A very low frequency supercapacitor circulation technique can be combined with commercial low dropout regulator ICs to significantly increase the end-to-end efficiency by a multiplication factor in the range of 1.33 to 3, compared to the efficiency of a linear regulator circuit with the same input-output voltages. In this patented supercapacitor-assisted low dropout (SCALDO) regulator technique developed by a research team at the University of Waikato, supercapacitors are used as lossless voltage droppers, and the energy reuse occurs at very low frequencies in the range of less than ten hertz, eliminating RFI/EMI concerns. This SCALDO technique opens up a new approach to design step-down, DC-DC converters suitable for processor power supplies with very high end-to-end efficiency which is closer to the efficiencies of practical switching regulators, while maintaining the superior output specifications of a linear design. Furthermore, it is important to emphasize that the SCALDO technique is not a variation of well-known switched capacitor DC-DC converters. In this thesis, the basic SCALDO concept is further developed to achieve generalised topologies, with the relevant theory that can be applied to a converter with any input-output step-down voltage combination. For these generalised topologies, some important design parameters, such as the number of supercapacitors, switching matrix details and efficiency improvement factors, are derived to form the basis of designing SCALDO regulators. With the availability of commercial LDO ICs with output current ratings up to 10 A, and thin-prole supercapacitors with DC voltage ratings from 2.3 to 5.5 V, several practically useful, medium-current SCALDO prototypes: 12V-to-5V, 5V-to-2V, 5.5V-to-3.3V have been developed. Experimental studies were carried out on these SCALDO prototypes to quantify performance in terms of line regulation, load regulation, efficiency and transient response. In order to accurately predict the performance and associated waveforms of the individual phases (charge, discharge and transition) of the SCALDO regulator, Laplace transform-based theory for supercapacitor circulation is developed, and analytical predictions are compared with experimental measurements for a 12V-to-5V prototype. The analytical results tallied well with the practical waveforms observed in a 12V-to-5V converter, indicating that the SCALDO technique can be generalized to other versatile configurations, and confirming that the simplified assumptions used to describe the circuit elements are reasonable and justifiable. After analysing the performance of several SCALDO prototypes, some practical issues in designing SCALDO regulators have been identified. These relate to power losses and implications for future development of the SCALDO design

A Silicon Carbide Linear Voltage Regulator for High Temperature Applications

Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon\u27s, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field. This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option for developing SiC processes due to its relatively simple implementation and yet, a performance acceptable to today\u27s systems applications. This document details the challenges faced and methods needed to design and fabricate the circuit as well as measured data corroborating design simulation results