A Capacitor-Less Wide-Band Power Supply Rejection Low Drop-Out Voltage Regulator with Capacitance Multiplier

A Low Drop-Out (LDO) voltage regulator with both capacitor-less and high power supply rejection (PSR) bandwidth attributes is highly admired for an integrated power management system of mobile electronics. The capacitor-less feature is demanded for realizing more compact device. The high PSR bandwidth is essential for being used with high frequency switching regulators. These two attributes are of strong trade-off because usually a capacitor-less LDO requires Miller Compensation which greatly limits the PSR bandwidth. This thesis presents a LDO design with both capacitor-less and high PSR bandwidth attributes. The proposed LDO structure incorporates external compensation which is gifted for extended PSR bandwidth. A capacitance multiplier (CM) of high multiplication factor (≈ 100) is designed to externally compensate the LDO without an external off-chip capacitor. In the proposed LDO circuit, NMOS is used as the pass transistor for system stabilization. Triple-well NMOS and Zero-Vt NMOS are used as pass transistors in the two main LDO designs. The design with the triple-well NMOS pass transistor aims at higher PSR bandwidth with lower power consumption. The design with Zero-Vt NMOS pass transistor eliminates the necessity of a charge pump for driving the gate of a NMOS pass transistor. Implemented in IBM 0.18μm technology, the LDO with triple-well NMOS achieves -40dB PSR to 19MHz with 265μA current consumption. The LDO with Zero-Vt NMOS achieves -40dB PSR to 10MHz with 350μA current consumption. In thisdesign, the feasibility of using Zero-Vt NMOS as a LDO pass transistor is proved. Moreover, compared to traditional capacitor-less LDOs with PSR bandwidth around 10kHz and above 0dB PSR beyond 10MHz, the PSR bandwidth of the proposed LDO structure is greatly extended with significant PSR over 10MHz. This also proves the feasibility of applying external compensation strategy to a capacitor-less LDO and its great beneficial effect on the PSR of the LDO

Addressing On-Chip Power Conversion and Dissipation Issues in Many-Core System-on-a-Chip based on Conventional Silicon and Emerging Nanotechnologies

Title from PDF of title page viewed August 27, 2018Dissertation advisor: Masud H ChowdhuryVitaIncludes bibliographical references (pages 158-163)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2017Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.Introduction -- Background and literature review -- Fully integrated on-chip switching voltage regulator -- Hybrid LDO voltage regulator based on cascaded second order multiple feedback loop -- Single and dual output two-stage on-chip power management system -- Sleep transistor design using double-gate FDSOI -- Subthreshold region sleep transistor design -- Conclusio

Integrated reference circuits for low-power capacitive sensor interfaces

This thesis consists of nine publications and an overview of the research topic, which also summarizes the work. The research described in this thesis concentrates on the design of low-power sensor interfaces for capacitive 3-axis micro-accelerometers. The primary goal throughout the thesis is to optimize power dissipation. Because the author made the main contribution to the design of the reference and power management circuits required, the overview part is dominated by the following research topics: current, voltage, and temperature references, frequency references, and voltage regulators. After an introduction to capacitive micro-accelerometers, the work describes the typical integrated readout electronics of a capacitive sensor on the functional level. The readout electronics can be divided into four different functional parts, namely the sensor readout itself, signal post-processing, references, and power management. Before the focus is shifted to the references and further to power management, different ways to realize the sensor readout are briefly discussed. Both current and voltage references are required in most analog and mixed-signal systems. A bandgap voltage reference, which inherently uses at least one current reference, is practical for the generation of an accurate reference voltage. Very similar circuit techniques can be exploited when implementing a temperature reference, the need for which in the sensor readout may be justified by the temperature compensation, for example. The work introduces non-linear frequency references, namely ring and relaxation oscillators, which are very suitable for the generation of the relatively low-frequency clock signals typically needed in the sensor interfaces. Such oscillators suffer from poor jitter and phase noise performance, the quantities of which also deserve discussion in this thesis. Finally, the regulation of the supply voltage using linear regulators is considered. In addition to extending the battery life by providing a low quiescent current, the regulator must be able to supply very low load currents and operate without off-chip capacitors

High Performance Power Management Integrated Circuits for Portable Devices

abstract: Portable devices often require multiple power management IC (PMIC) to power different sub-modules, Li-ion batteries are well suited for portable devices because of its small size, high energy density and long life cycle. Since Li-ion battery is the major power source for portable device, fast and high-efficiency battery charging solution has become a major requirement in portable device application. In the first part of dissertation, a high performance Li-ion switching battery charger is proposed. Cascaded two loop (CTL) control architecture is used for seamless CC-CV transition, time based technique is utilized to minimize controller area and power consumption. Time domain controller is implemented by using voltage controlled oscillator (VCO) and voltage controlled delay line (VCDL). Several efficiency improvement techniques such as segmented power-FET, quasi-zero voltage switching (QZVS) and switching frequency reduction are proposed. The proposed switching battery charger is able to provide maximum 2 A charging current and has an peak efficiency of 93.3%. By configure the charger as boost converter, the charger is able to provide maximum 1.5 A charging current while achieving 96.3% peak efficiency. The second part of dissertation presents a digital low dropout regulator (DLDO) for system on a chip (SoC) in portable devices application. The proposed DLDO achieve fast transient settling time, lower undershoot/overshoot and higher PSR performance compared to state of the art. By having a good PSR performance, the proposed DLDO is able to power mixed signal load. To achieve a fast load transient response, a load transient detector (LTD) enables boost mode operation of the digital PI controller. The boost mode operation achieves sub microsecond settling time, and reduces the settling time by 50% to 250 ns, undershoot/overshoot by 35% to 250 mV and 17% to 125 mV without compromising the system stability.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Ultra-Low Power Transmitter and Power Management for Internet-of-Things Devices

Two of the most critical components in an Internet-of-Things (IoT) sensing and transmitting node are the power management unit (PMU) and the wireless transmitter (Tx). The desire for longer intervals between battery replacements or a completely self-contained, battery-less operation via energy harvesting transducers and circuits in IoT nodes demands highly efficient integrated circuits. This dissertation addresses the challenge of designing and implementing power management and Tx circuits with ultra-low power consumption to enable such efficient operation. The first part of the dissertation focuses on the study and design of power management circuits for IoT nodes. This opening portion elaborates on two different areas of the power management field: Firstly, a low-complexity, SPICE-based model for general low dropout (LDO) regulators is demonstrated. The model aims to reduce the stress and computation times in the final stages of simulation and verification of Systems-on-Chip (SoC), including IoT nodes, that employ large numbers of LDOs. Secondly, the implementation of an efficient PMU for an energy harvesting system based on a thermoelectric generator transducer is discussed. The PMU includes a first-in-its-class LDO with programmable supply noise rejection for localized improvement in the suppression. The second part of the dissertation addresses the challenge of designing an ultra- low power wireless FSK Tx in the 900 MHz ISM band. To reduce the power consumption and boost the Tx energy efficiency, a novel delay cell exploiting current reuse is used in a ring-oscillator employed as the local oscillator generator scheme. In combination with an edge-combiner PA, the Tx showed a measured energy efficiency of 0.2 nJ/bit and a normalized energy efficiency of 3.1 nJ/(bit∙mW) when operating at output power levels up to -10 dBm and data rates of 3 Mbps. To close this dissertation, the implementation of a supply-noise tolerant BiCMOS ring-oscillator is discussed. The combination of a passive, high-pass feedforward path from the supply to critical nodes in the selected delay cell and a low cost LDO allow the oscillator to exhibit power supply noise rejection levels better than –33 dB in experimental results

On-Chip Solar Energy Harvester and PMU With Cold Start-Up and Regulated Output Voltage for Biomedical Applications

This paper presents experimental results from a system that comprises a fully autonomous energy harvester with a solar cell of 1 mm 2 as energy transducer and a Power Management Unit (PMU) on the same silicon substrate, and an output voltage regulator. Both chips are implemented in standard 0.18 μm CMOS technology with total layout areas of 1.575 mm 2 and 0.0126 mm 2 , respectively. The system also contains an off-the-shelf 3.2 mm × 2.5 mm × 0.9 mm supercapacitor working as an off-chip battery or energy reservoir between the PMU and the voltage regulator. Experimental results show that the fast energy recovery of the on-chip solar cell and PMU permits the system to replenish the supercapacitor with enough charge as to sustain Bluetooth Low Energy (BLE) communications even with input light powers of 510 nW. The whole system is able to self-start-up without external mechanisms at 340 nW. This work is the first step towards a self-supplied sensor node with processing and communication capabilities. The small form factor and ultra-low power consumption of the system components is in compliance with biomedical applications requirementsThis work was supported in part by the Spanish Government (Ministerio de Ciencia, Innovación y Universidades) under Project RTI2018-097088-B-C32 and Project RTI2018-095994-B-I00 (MICINN/FEDER), in part by the Xunta de Galicia, in part by the Consellería de Cultura, Educación e Ordenación Universitaria (accreditation 2016-2019, ED431G/08 and reference competitive group 2017-2020, ED431C 2017/69) and European Regional Development Fund (ERDF), and in part by the Junta de Extremadura and the ERDF, under Grant IB 18079S

Low Power DC-DC Converters and a Low Quiescent Power High PSRR Class-D Audio Amplifier

High-performance DC-DC voltage converters and high-efficient class-D audio amplifiers are required to extend battery life and reduce cost in portable electronics. This dissertation focuses on new system architectures and design techniques to reduce area and minimize quiescent power while achieving high performance. Experimental results from prototype circuits to verify theory are shown. Firstly, basics on low drop-out (LDO) voltage regulators are provided. Demand for system-on-chip solutions has increased the interest in LDO voltage regulators that do not require a bulky off-chip capacitor to achieve stability, also called capacitor- less LDO (CL-LDO) regulators. Several architectures have been proposed; however, comparing these reported architectures proves difficult, as each has a distinct process technology and specifications. This dissertation compares CL-LDOs in a unified manner. Five CL-LDO regulator topologies were designed, fabricated, and tested under common design conditions. Secondly, fundamentals on DC-DC buck converters are presented and area reduction techniques for the external output filter, power stage, and compensator are proposed. A fully integrated buck converter using standard CMOS technology is presented. The external output filter has been fully-integrated by increasing the switching frequency up to 45 MHz. Moreover, a monolithic single-input dual-output buck converter is proposed. This architecture implements only three switches instead of the four switches used in conventional solutions, thus potentially reducing area in the power stage through proper design of the power switches. Lastly, a monolithic PWM voltage mode buck converter with compact Type-III compensation is proposed. This compensation scheme employs a combination of Gm-RC and Active-RC techniques to reduce the area of the compensator, while maintaining low quiescent power consumption and fast transient response. The proposed compensator reduces area by more than 45% when compared to an equivalent conventional Type-III compensator. Finally, basics on class-D audio amplifiers are presented and a clock-free current controlled class-D audio amplifier using integral sliding mode control is proposed. The proposed amplifier achieves up to 82 dB of power supply rejection ratio and a total harmonic distortion plus noise as low as 0.02%. The IC prototype’s controller consumes 30% less power than those featured in recently published works

A fully-integrated 180 nm CMOS 1.2 V low-dropout regulator for low-power portable applications

This paper presents the design and postlayout simulation results of a capacitor-less low dropout (LDO) regulator fully integrated in a low-cost standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology which regulates the output voltage at 1.2 V from a 3.3 to 1.3 V battery over a -40 to 120 degrees C temperature range. To meet with the constraints of system-on-chip (SoC) battery-operated devices, ultralow power (I-q = 8.6 mu A) and minimum area consumption (0.109 mm(2)) are maintained, including a reference voltage V-ref = 0.4 V. It uses a high-gain dynamically biased folded-based error amplifier topology optimized for low-voltage operation that achieves an enhanced regulation-fast transient performance trade-off

CMOS Design of Reconfigurable SoC Systems for Impedance Sensor Devices

La rápida evolución en el campo de los sensores inteligentes, junto con los avances en las tecnologías de la computación y la comunicación, está revolucionando la forma en que recopilamos y analizamos datos del mundo físico para tomar decisiones, facilitando nuevas soluciones que desempeñan tareas que antes eran inconcebibles de lograr.La inclusión en un mismo dado de silicio de todos los elementos necesarios para un proceso de monitorización y actuación ha sido posible gracias a los avances en micro (y nano) electrónica. Al mismo tiempo, la evolución de las tecnologías de procesamiento y micromecanizado de superficies de silicio y otros materiales complementarios ha dado lugar al desarrollo de sensores integrados compatibles con CMOS, lo que permite la implementación de matrices de sensores de alta densidad. Así, la combinación de un sistema de adquisición basado en sensores on-Chip, junto con un microprocesador como núcleo digital donde se puede ejecutar la digitalización de señales, el procesamiento y la comunicación de datos proporciona características adicionales como reducción del coste, compacidad, portabilidad, alimentación por batería, facilidad de uso e intercambio inteligente de datos, aumentando su potencial número de aplicaciones.Esta tesis pretende profundizar en el diseño de un sistema portátil de medición de espectroscopía de impedancia de baja potencia operado por batería, basado en tecnologías microelectrónicas CMOS, que pueda integrarse con el sensor, proporcionando una implementación paralelizable sin incrementar significativamente el tamaño o el consumo, pero manteniendo las principales características de fiabilidad y sensibilidad de un instrumento de laboratorio. Esto requiere el diseño tanto de la etapa de gestión de la energía como de las diferentes celdas que conforman la interfaz, que habrán de satisfacer los requisitos de un alto rendimiento a la par que las exigentes restricciones de tamaño mínimo y bajo consumo requeridas en la monitorización portátil, características que son aún más críticas al considerar la tendencia actual hacia matrices de sensores.A nivel de celdas, se proponen diferentes circuitos en un proceso CMOS de 180 nm: un regulador de baja caída de voltaje como unidad de gestión de energía, que proporciona una alimentación de 1.8 V estable, de bajo ruido, precisa e independiente de la carga para todo el sistema; amplificadores de instrumentación con una aproximación completamente diferencial, que incluyen una etapa de entrada de voltaje/corriente configurable, ganancia programable y ancho de banda ajustable, tanto en la frecuencia de corte baja como alta; un multiplicador para conformar la demodulación dual, que está embebido en el amplificador para optimizar consumo y área; y filtros pasa baja totalmente integrados, que actúan como extractores de magnitud de DC, con frecuencias de corte ajustables desde sub-Hz hasta cientos de Hz.<br /

Design of Analog & Mixed Signal Circuits in Continuous-Time Sigma-Delta Modulators for System-on-Chip applications

Software-defined radio receivers (SDRs) have become popular to accommodate multi-standard wireless services using a single chip-set solution in mobile telecommunication systems. In SDRs, the signal is down-converted to an intermediate frequency and then digitalized. This approach relaxes the specifications for most of the analog front-end building blocks by performing most of the signal processing in the digital domain. However, since the analog-to-digital converter (ADC) is located as close as possible to the antenna in SDR architectures, the ADC specification requirements are very stringent because a large amount of interference signals are present at the ADC input due to the removal of filtering blocks, which particularly affects the dynamic range (DR) specification. Sigma-delta (ΣΔ) ADCs have several benefits such as low implementation cost, especially when the architecture contains mostly digital circuits. Furthermore, continuous-time (CT) ΣΔ ADCs allow elimination of the anti‐aliasing filter because input signals are sampled after the integrator. The bandwidth requirements for the amplifiers in CT ΣΔ ADCs can be relaxed due to the continuous operation without stringing settling time requirements. Therefore, they are suitable for high‐speed and low‐power applications. In addition, CT ΣΔ ADCs achieve high resolution due to the ΣΔ modulator’s noise shaping property. However, the in-band quantization noise is shaped by the analog loop filter and the distortions of the analog loop filter directly affect the system output. Hence, highly linear low-noise loop filters are required for high-performance ΣΔ modulators. The first task in this research focused on using CMOS 90 nm technology to design and fabricate a 5^(TH)–order active-RC loop filter with a cutoff frequency of 20 MHz for a low pass (LP) CT ΣΔ modulator. The active-RC topology was selected because of the high DR requirement in SDR applications. The amplifiers in the first stage of the loop filter were implemented with linearization techniques employing anti-parallel cancellation and source degeneration in the second stage of the amplifiers. These techniques improve the third-order intermodulation (IM3) by approximately 10 dB; while noise, area, and power consumption do not increase by more than 10%. Second, a current-mode adder-flash ADC was also fabricated as part of a LP CT ΣΔ modulator. The new current-mode operation developed through this research makes possible a 53% power reduction. The new technology also lessens existing problems associated with voltage-mode flash ADCs, which are mainly related to voltage headroom restrictions, speed of operation, offsets, and power efficiency of the latches. The core of the current-mode adder-flash ADC was fabricated in CMOS 90 nm technology with 1.2 V supply; it dissipates 3.34 mW while operating at 1.48 GHz and consumes a die area of 0.0276 mm^(2). System-on chip (SoC) solutions are becoming more popular in mobile telecommunication systems to improve the portability and competitiveness of products. Since the analog/RF and digital blocks often share the same external power supply in SoC solutions, the on-chip generation of clean power supplies is necessary to avoid system performance degradation due to supply noises. Finally, the critical design issues for external capacitor-less low drop-out (LDO) regulators for SoC applications are addressed in this dissertation, especially the challenges related to power supply rejection at high frequencies as well as loop stability and transient response. The paths of the power supply noise to the LDO output were analyzed, and a power supply noise cancellation circuit was developed. The power supply rejection (PSR) performance was improved by using a replica circuit that tracks the main supply noise under process-voltage-temperature variations and all operating conditions. Fabricated in a 0.18 μm CMOS technology with 1.8 V supply, the entire proposed LDO consumes 55 μA of quiescent current while in standby operation, and it has a drop-out voltage of 200 mV when providing 50 mA to the load. Its active core chip area is 0.14 mm2. Compared to a conventional uncompensated LDO, the proposed architecture presents a PSR improvement of 34 dB and 25 dB at 1 MHz and 4 MHz, respectively