Systematic Comparison of HF CMOS Transconductors

Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties. Based on bandwidth considerations, simple V-I kernels with few or no internal nodes are preferred. In a systematic way, virtually all simple kernels published in literature are generated. This is done in two steps: 1) basic 3-terminal transconductors are covered and 2) then five different techniques to combine two of them in a composite V-I kernel. In order to compare transconductors in a fair way, a normalized signal-to-noise ratio (NSNR) is defined. The basic V-I kernels and the five classes of composite V-I kernels are then compared, leading to insight in the key mechanisms that affect NSNR. Symbolic equations are derived to estimate NSNR, while simulations with more advanced MOSFET models verify the results. The results show a strong tradeoff between NSNR and transconductance tuning range. Resistively generated MOSFETs render the best NSNR results and are robust for future technology developments

A neural probe with up to 966 electrodes and up to 384 configurable channels in 0.13 μm SOI CMOS

In vivo recording of neural action-potential and local-field-potential signals requires the use of high-resolution penetrating probes. Several international initiatives to better understand the brain are driving technology efforts towards maximizing the number of recording sites while minimizing the neural probe dimensions. We designed and fabricated (0.13-μm SOI Al CMOS) a 384-channel configurable neural probe for large-scale in vivo recording of neural signals. Up to 966 selectable active electrodes were integrated along an implantable shank (70 μm wide, 10 mm long, 20 μm thick), achieving a crosstalk of −64.4 dB. The probe base (5 × 9 mm2) implements dual-band recording and a 1

RF Power Transfer, Energy Harvesting, and Power Management Strategies

Energy harvesting is the way to capture green energy. This can be thought of as a recycling process where energy is converted from one form (here, non-electrical) to another (here, electrical). This is done on the large energy scale as well as low energy scale. The former can enable sustainable operation of facilities, while the latter can have a significant impact on the problems of energy constrained portable applications. Different energy sources can be complementary to one another and combining multiple-source is of great importance. In particular, RF energy harvesting is a natural choice for the portable applications. There are many advantages, such as cordless operation and light-weight. Moreover, the needed infra-structure can possibly be incorporated with wearable and portable devices. RF energy harvesting is an enabling key player for Internet of Things technology. The RF energy harvesting systems consist of external antennas, LC matching networks, RF rectifiers for ac to dc conversion, and sometimes power management. Moreover, combining different energy harvesting sources is essential for robustness and sustainability. Wireless power transfer has recently been applied for battery charging of portable devices. This charging process impacts the daily experience of every human who uses electronic applications. Instead of having many types of cumbersome cords and many different standards while the users are responsible to connect periodically to ac outlets, the new approach is to have the transmitters ready in the near region and can transfer power wirelessly to the devices whenever needed. Wireless power transfer consists of a dc to ac conversion transmitter, coupled inductors between transmitter and receiver, and an ac to dc conversion receiver. Alternative far field operation is still tested for health issues. So, the focus in this study is on near field. The goals of this study are to investigate the possibilities of RF energy harvesting from various sources in the far field, dc energy combining, wireless power transfer in the near field, the underlying power management strategies, and the integration on silicon. This integration is the ultimate goal for cheap solutions to enable the technology for broader use. All systems were designed, implemented and tested to demonstrate proof-of concept prototypes

Design of a low power switched-capacitor pipeline analog-to-digital converter

An Analog to Digital Converter (ADC) is a circuit which converts an analog signal into digital signal. Real world is analog, and the data processed by the computer or by other signal processing systems is digital. Therefore, the need for ADCs is obvious. In this thesis, several novel designs used to improve ADCs operation speed and reduce ADC power consumption are proposed. First, a high speed switched source follower (SSF) sample and hold amplifier without feedthrough penalty is implemented and simulated. The SSF sample and hold amplifier can achieve 6 Bit resolution with sampling rate at 10Gs/s. Second, a novel rail-to-rail time domain comparator used in successive approximation register ADC (SAR ADC) is implemented and simulated. The simulation results show that the proposed SAR ADC can only consume 1.3 muW with a 0.7 V power supply. Finally, a prototype pipeline ADC is implemented and fabricated in an IBM 90nm CMOS process. The proposed design is validated using measurement on a fabricated silicon IC, and the proposed 10-bit ADC achieves a peak signal-to-noise- and-distortion-ratio (SNDR) of 47 dB. This SNDR translates to a figure of merit (FOM) of 2.6N/conversion-step with a 1.2 V power supply

Novel techniques for the design and practical realization of switched-capacitor circuits in deep-submicron CMOS technologies

Dissertação apresentada para obtenção do Grau de Doutor em Engenharia Electrotécnica e de Computadores pela Universidade Nova de Lisboa, Faculdade de Ciências e TecnologiaSwitches presenting high linearity are more and more required in switched-capacitor circuits,namely in 12 to 16 bits resolution analog-to-digital converters. The CMOS technology evolves continuously towards lower supply voltages and, simultaneously, new design techniques are necessary to fulfill the realization of switches exhibiting a high dynamic range and a distortion compatible with referred resolutions. Moreover, with the continuously downing of the sizes, the physic constraints of the technology must be considered to avoid the excessive stress of the devices when relatively high voltages are applied to the gates. New switch-linearization techniques, with high reliability, must be necessarily developed and demonstrated in CMOS integrated circuits. Also, the research of new structures of circuits with switched-capacitor is permanent. Simplified and efficient structures are mandatory, adequate to the new demands emerging from the proliferation of portable equipments, necessarily with low energy consumption while assuring high performance and multiple functions. The work reported in this Thesis comprises these two areas. The behavior of the switches under these new constraints is analyzed, being a new and original solution proposed, in order to maintain the performance. Also, proposals for the application of simpler clock and control schemes are presented, and for the use of open-loop structures and amplifiers with localfeedback. The results, obtained in laboratory or by simulation, assess the feasibility of the presented proposals

A Multi-Gigahertz Analog Transient Recorder Integrated Circuit

A monolithic multi-channel analog transient recorder, implemented using switched capacitor sample-and-hold circuits and a high-speed analogically-adjustable delay-line-based write clock, has been designed, fabricated and tested. The 2.1 by 6.9 mm layout, in 1.2 micron CMOS, includes over 31,000 transistors and 2048 double polysilicon capacitors. The circuit contains four parallel channels, each with a 512 deep switched-capacitor sample-and-hold system. A 512 deep edge sensitive tapped active delay line uses look-ahead and 16 way interleaving to develop the 512 sample and hold clocks, each as little as 3.2 ns wide and 200 ps apart. Measurements of the device have demonstrated 5 GHz maximum sample rate, at least 350 MHz bandwidth, an extrapolated rms aperture uncertainty per sample of 0.7 ps, and a signal to rms noise ratio of 2000:1.Comment: 64 pages, 17 figures. Thesis, University of California, Berkeley, 199

A CMOS Linear Voltage/Current Dual-Mode Imager

We present a CMOS image sensor capable of both voltage- and current-mode operations. Each pixel on the image has a single transistor acting as either source follower for voltage readout, or transconductor for current readout. The two modes share the same readout lines, but have their own correlated double sampling (CDS) units for noise suppression. We also propose a novel current-mode readout technique using a velocity saturated short-channel transistor, which achieves high linearity. The 300x200 image array is a mixture of 3 types of pixels with identical photodiodes and access switches; while the readout transistors are sized for their designated mode of operation. This ensures a fair comparison on the performance of the different modes

Techniques for low power analog, digital and mixed signal CMOS integrated circuit design

With the continuously expanding of market for portable devices such as wireless communication devices, portable computers, consumer electronics and implantable medical devices, low power is becoming increasingly important in integrated circuits. The low power design can increase operation time and/or utilize a smaller size and lighter-weight battery. In this dissertation, several low power complementary metal-oxide-semiconductor (CMOS) integrated circuit design techniques are investigated. A metal-oxide-semiconductor field effect transistor (MOSFET) can be operated at a lower voltage by forward-biasing the source-substrate junction. This approach has been investigated in detail and used to designing an ultra-low power CMOS operational amplifier for operation at ± 0.4 V. The issue of CMOS latchup and noise has been investigated in detail because of the forward biasing of the substrates of MOSFETs in CMOS. With increasing forward body-bias, the leakage current increases significantly. Dynamic threshold MOSFET (DTMOS) technique is proposed to overcome the drawback which is inherent in a forward-biased MOSFET. By using the DTMOS method with the forward source-body biased MOSFET, two low-power low-voltage CMOS VLSI circuits that of a CMOS analog multiplexer and a Schmitt trigger circuits are designed. In this dissertation, an adaptive body-bias technique is proposed. Adaptive body-bias voltage is generated for several operational frequencies. Another issue, which the chip design community is facing, is the development of portable, cost effective and low power supply voltage. This dissertation proposes a new cost-effective DC/DC converter design in standard 1.5 um n-well CMOS, which adopts a delay-line controller for voltage regulation

Advanced CMOS Integrated Circuit Design and Application

The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems