534 research outputs found

    Polarization Imaging Sensors in Advanced Feature CMOS Technologies

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    The scaling of CMOS technology, as predicted by Moore\u27s law, has allowed for realization of high resolution imaging sensors and for the emergence of multi-mega-pixel imagers. Designing imaging sensors in advanced feature technologies poses many challenges especially since transistor models do not accurately portray their performance in these technologies. Furthermore, transistors fabricated in advanced feature technologies operate in a non-conventional mode known as velocity saturation. Traditionally, analog designers have been discouraged from designing circuits in this mode of operation due to the low gain properties in single transistor amplifiers. Nevertheless, velocity saturation will become even more prominent mode of operation as transistors continue to shrink and warrants careful design of circuits that can exploit this mode of operation. In this research endeavor, I have utilized velocity saturation mode of operation in order to realize low noise imaging sensors. These imaging sensors incorporate low noise analog circuits at the focal plane in order to improve the signal to noise ratio and are fabricated in 0.18 micron technology. Furthermore, I have explored nanofabrication techniques for realizing metallic nanowires acting as polarization filters. These nanoscopic metallic wires are deposited on the surface of the CMOS imaging sensor in order to add polarization sensitivity to the CMOS imaging sensor. This hybrid sensor will serve as a test bed for exploring the next generation of low noise and highly sensitive polarization imaging sensors

    Smart cmos image sensor for 3d measurement

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    3D measurements are concerned with extracting visual information from the geometry of visible surfaces and interpreting the 3D coordinate data thus obtained, to detect or track the position or reconstruct the profile of an object, often in real time. These systems necessitate image sensors with high accuracy of position estimation and high frame rate of data processing for handling large volumes of data. A standard imager cannot address the requirements of fast image acquisition and processing, which are the two figures of merit for 3D measurements. Hence, dedicated VLSI imager architectures are indispensable for designing these high performance sensors. CMOS imaging technology provides potential to integrate image processing algorithms on the focal plane of the device, resulting in smart image sensors, capable of achieving better processing features in handling massive image data. The objective of this thesis is to present a new architecture of smart CMOS image sensor for real time 3D measurement using the sheet-beam projection methods based on active triangulation. Proposing the vision sensor as an ensemble of linear sensor arrays, all working in parallel and processing the entire image in slices, the complexity of the image-processing task shifts from O (N 2 ) to O (N). Inherent also in the design is the high level of parallelism to achieve massive parallel processing at high frame rate, required in 3D computation problems. This work demonstrates a prototype of the smart linear sensor incorporating full testability features to test and debug both at device and system levels. The salient features of this work are the asynchronous position to pulse stream conversion, multiple images binarization, high parallelism and modular architecture resulting in frame rate and sub-pixel resolution suitable for real time 3D measurements

    Compressive Sensing Based Bio-Inspired Shape Feature Detection CMOS Imager

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    A CMOS imager integrated circuit using compressive sensing and bio-inspired detection is presented which integrates novel functions and algorithms within a novel hardware architecture enabling efficient on-chip implementation

    CMOS Vision Sensors: Embedding Computer Vision at Imaging Front-Ends

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    CMOS Image Sensors (CIS) are key for imaging technol-ogies. These chips are conceived for capturing opticalscenes focused on their surface, and for delivering elec-trical images, commonly in digital format. CISs may incor-porate intelligence; however, their smartness basicallyconcerns calibration, error correction and other similartasks. The term CVISs (CMOS VIsion Sensors) definesother class of sensor front-ends which are aimed at per-forming vision tasks right at the focal plane. They havebeen running under names such as computational imagesensors, vision sensors and silicon retinas, among others. CVIS and CISs are similar regarding physical imple-mentation. However, while inputs of both CIS and CVISare images captured by photo-sensors placed at thefocal-plane, CVISs primary outputs may not be imagesbut either image features or even decisions based on thespatial-temporal analysis of the scenes. We may hencestate that CVISs are more “intelligent” than CISs as theyfocus on information instead of on raw data. Actually,CVIS architectures capable of extracting and interpretingthe information contained in images, and prompting reac-tion commands thereof, have been explored for years inacademia, and industrial applications are recently ramp-ing up.One of the challenges of CVISs architects is incorporat-ing computer vision concepts into the design flow. Theendeavor is ambitious because imaging and computervision communities are rather disjoint groups talking dif-ferent languages. The Cellular Nonlinear Network Univer-sal Machine (CNNUM) paradigm, proposed by Profs.Chua and Roska, defined an adequate framework forsuch conciliation as it is particularly well suited for hard-ware-software co-design [1]-[4]. This paper overviewsCVISs chips that were conceived and prototyped at IMSEVision Lab over the past twenty years. Some of them fitthe CNNUM paradigm while others are tangential to it. Allthem employ per-pixel mixed-signal processing circuitryto achieve sensor-processing concurrency in the quest offast operation with reduced energy budget.Junta de Andalucía TIC 2012-2338Ministerio de Economía y Competitividad TEC 2015-66878-C3-1-R y TEC 2015-66878-C3-3-

    CMOS Image Sensor with a Built-in Lane Detector

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    This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS) imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC) based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC) or Digital Signal Processor (DSP), the proposed imager, without extra Analog to Digital Converter (ADC) circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 × 2,389.8 μm, and the package uses 40 pin Dual-In-Package (DIP). The pixel cell size is 18.45 × 21.8 μm and the core size of photodiode is 12.45 × 9.6 μm; the resulting fill factor is 29.7%

    Power-efficient focal-plane image representation for extraction of enriched Viola-Jones features

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    This paper describes the use of a reconfigurable focal-plane processing array in order to achieve an image representation which dramatically reduces the computational load of the Viola-Jones object detection framework. Additionally, such representation provides richer information than the simple sum of pixels within rectangular regions originally defined in this framework. As a result, more elaborated features could be devised to speed up the execution of the subsequent attentional cascade, boosting thus the performance of the whole algorithm. The proposed circuitry has been successfully implemented in a CMOS prototype smart imager. Experimental results are given, demonstrating the suitability of the approach presented to efficiently deliver enriched Viola-Jones features.Ministerio de Ciencia e Innovación TEC2009-11812Junta de Andalucía P08-TIC-03674Office of Naval Research (USA) N00014111031
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