81 research outputs found

    LOW PHASE NOISE CMOS PLL FREQUENCY SYNTHESIZER DESIGN AND ANALYSIS

    Get PDF
    The phase-locked loop (PLL) frequency synthesizer is a critical device of wireless transceivers. It works as a local oscillator (LO) for frequency translation and channel selection in the transceivers but suffers phase noise including reference spurs. In this dissertation for lowing phase noise and power consumption, efforts are placed on the new design of PLL components: VCOs, charge pumps and sigma delta modulators. Based on the analysis of the VCO phase noise generation mechanism and improving on the literature results, a design-oriented phase noise model for a complementary cross-coupled LC VCO is provided. The model reveals the relationship between the phase noise performance and circuit design parameters. Using this phase noise model, an optimized 2GHz low phase noise CMOS LC VCO is designed, simulated and fabricated. The theoretical analysis results are confirmed by the simulation and experimental results. With this VCO phase noise model, we also design a low phase noise, low gain wideband VCO with the typical VCO gain around 100MHz/V. Improving upon literature results, a complete quantitative analysis of reference spur is given in this dissertation. This leads to a design of a charge pump by using a negative feedback circuit and replica bias to reduce the current mismatch which causes the reference spur. In addition, low-impedance charge/discharge paths are provided to overcome the charge pump current glitches which also cause PLL spurs. With a large bit-width high order sigma delta modulator, the fractional-N PLL has fine frequency resolution and fast locking time. Based on an analysis of sigma delta modulator models introduced in this dissertation, a 3rd-order MASH 1-1-1 digital sigma delta modulator is designed. Pipelining techniques and true single phase clock (TSPC) techniques are used for saving power and area. Included is the design of a fully integrated 2.4GHz ยงยข fractional-N CMOS PLL frequency synthesizer. It takes advantage of a sigma delta modulator to get a very fine frequency resolution and a relatively large loop bandwidth. This frequency synthesizer is a 4th-order charge pump PLL with 26MHz reference frequency. The loop bandwidth is about 150KHz, while the whole PLL phase noise is about -120dBc/Hz at 1MHz frequency offset

    Ultra Wideband Oscillators

    Get PDF

    Direct Conversion RF Front-End Implementation for Ultra-Wideband (UWB) and GSM/WCDMA Dual-Band Applications in Silicon-Based Technologies

    Get PDF
    This dissertation focuses on wideband circuit design and implementation issues up to 10GHz based on the direct conversion architecture in the CMOS and SiGe BiCMOS technologies. The dissertation consists of two parts: One, implementation of a RF front-end receiver for an ultra-wideband system and, two, implementation of a local oscillation (LO) signal for a GSM/WCDMA multiband application. For emerging ultra-wideband (UWB) applications, the key active components in the RF front-end receiver were designed and implemented in 0.18um SiGe BiCMOS process. The design of LNA, which is the critical circuit block for both systems, was analyzed in terms of noise, linearity and group delay variation over an extemely wide bandwidth. Measurements are demonstrated for an energy-thrifty UWB receiver based on an MB-OFDM system covering the full FCC-allowed UWB frequency range. For multiband applications such as a GSM/WCDMA dual-band application, the design of wideband VCO and various frequency generation blocks are investigated as alternatives for implementation of direct conversion architecture. In order to reduce DC-offset and LO pulling phenomena that degrade performance in a typical direct conversion scheme, an innovative fractional LO signal generator was implemented in a standard CMOS process. A simple analysis is provided for the loop dynamics and operating range of the design as well as for the measured results of the factional LO signal generator.Ph.D.Committee Chair: Dr. Laskar, Joy; Committee Member: Dr. Cressler, John; Committee Member: Dr. Kohl, Paul; Committee Member: Dr. Papapolymerou, John; Committee Member: Dr. Scott, Waymon

    Circuits and Systems for On-Chip RF Chemical Sensors and RF FDD Duplexers

    Get PDF
    Integrating RF bio-chemical sensors and RF duplexers helps to reduce cost and area in the current applications. Furthermore, new applications can exist based on the large scale integration of these crucial blocks. This dissertation addresses the integration of RF bio-chemical sensors and RF duplexers by proposing these initiatives. A low power integrated LC-oscillator-based broadband dielectric spectroscopy (BDS) system is presented. The real relative permittivity ฮตโ€™r is measured as a shift in the oscillator frequency using an on-chip frequency-to-digital converter (FDC). The imaginary relative permittivity ฮตโ€r increases the losses of the oscillator tank which mandates a higher dc biasing current to preserve the same oscillation amplitude. An amplitude-locked loop (ALL) is used to fix the amplitude and linearize the relation between the oscillator bias current and ฮตโ€r. The proposed BDS system employs a sensing oscillator and a reference oscillator where correlated double sampling (CDS) is used to mitigate the impact of flicker noise, temperature variations and frequency drifts. A prototype is implemented in 0.18 ยตm CMOS process with total chip area of 6.24 mm^2 to operate in 1-6 GHz range using three dual bands LC oscillators. The achieved standard deviation in the air is 2.1 ppm for frequency reading and 110 ppm for current reading. A tunable integrated electrical balanced duplexer (EBD) is presented as a compact alternative to multiple bulky SAW and BAW duplexers in 3G/4G cellular transceivers. A balancing network creates a replica of the transmitter signal for cancellation at the input of a single-ended low noise amplifier (LNA) to isolate the receive path from the transmitter. The proposed passive EBD is based on a cross-connected transformer topology without the need of any extra balun at the antenna side. The duplexer achieves around 50 dB TX-RX isolation within 1.6-2.2 GHz range up to 22 dBm. The cascaded noise figure of the duplexer and LNA is 6.5 dB, and TX insertion loss (TXIL) of the duplexer is about 3.2 dB. The duplexer and LNA are implemented in 0.18 ยตm CMOS process and occupy an active area of 0.35 mm^2

    Design and Implementation of a Lowโ€Power Wireless Respiration Monitoring Sensor

    Get PDF
    Wireless devices for monitoring of respiration activities can play a major role in advancing modern home-based health care applications. Existing methods for respiration monitoring require special algorithms and high precision filters to eliminate noise and other motion artifacts. These necessitate additional power consuming circuitry for further signal conditioning. This dissertation is particularly focused on a novel approach of respiration monitoring based on a PVDF-based pyroelectric transducer. Low-power, low-noise, and fully integrated charge amplifiers are designed to serve as the front-end amplifier of the sensor to efficiently convert the charge generated by the transducer into a proportional voltage signal. To transmit the respiration data wirelessly, a lowpower transmitter design is crucial. This energy constraint motivates the exploration of the design of a duty-cycled transmitter, where the radio is designed to be turned off most of the time and turned on only for a short duration of time. Due to its inherent duty-cycled nature, impulse radio ultra-wideband (IR-UWB) transmitter is an ideal candidate for the implementation of a duty-cycled radio. To achieve better energy efficiency and longer battery lifetime a low-power low-complexity OOK (on-off keying) based impulse radio ultra-wideband (IR-UWB) transmitter is designed and implemented using standard CMOS process. Initial simulation and test results exhibit a promising advancement towards the development of an energy-efficient wireless sensor for monitoring of respiration activities

    DDR5 ํด๋ฝ ๋ฒ„ํผ๋ฅผ ์œ„ํ•œ LC PLL์˜ ์„ค๊ณ„

    Get PDF
    ํ•™์œ„๋…ผ๋ฌธ(์„์‚ฌ) -- ์„œ์šธ๋Œ€ํ•™๊ต๋Œ€ํ•™์› : ๊ณต๊ณผ๋Œ€ํ•™ ์ „๊ธฐยท์ •๋ณด๊ณตํ•™๋ถ€, 2022. 8. ์ •๋•๊ท .This thesis describes a wide-range, fast-locking LC PLL for DDR5 clock buffer application. To operate LC PLL at wide range of input frequency, proposed PLL uses LC VCO with 28GHz center frequency and calculates appropriate division ratio of programmable divider for certain input frequen-cy at transient state. Calculating division ratio is achieved by using integer counter and fractional counter, detecting frequency of input clock at transient state. After calculating division ratio, proposed PLL operates as 3rd order charge pump PLL with optimum current value to lock fast. Proposed PLL is described with Systemverilog and simulation results shows that proposed LC PLL operates at 1 ~ 4.2GHz input frequency, while successfully acquires to lock at under 1ฮผs. Also, LC-VCO is designed in a 40nm CMOS and simulation results shows that tuning range of VCO is ยฑ9.25% with respect to center frequency of 28.2GHz, and VCO dissipates 26.4mW and phase noise is โ€“104.86dBc/Hz at 1MHz offset, operating at center fre-quency with 1.1V supply voltage.๋ณธ ๋…ผ๋ฌธ์€ DDR5 Clock Buffer๋ฅผ ์œ„ํ•œ, ๋„“์€ ๋ฒ”์œ„์—์„œ ๋น ๋ฅด๊ฒŒ ๋ฝ์„ ํ•˜๋Š” LC PLL์— ๋Œ€ํ•ด์„œ ์„ค๋ช…ํ•œ๋‹ค. ๋„“์€ ๋ฒ”์œ„์˜ ์ž…๋ ฅ ์ฃผํŒŒ์ˆ˜์—์„œ LC PLL์„ ๋™์ž‘ํ•˜๊ธฐ ์œ„ํ•ด, ์ œ์•ˆํ•œ PLL์€ 28GHz๊ฐ€ ์ค‘์‹ฌ ์ฃผํŒŒ์ˆ˜์ธ LC VCO์„ ์‚ฌ์šฉํ•˜์—ฌ, ๊ณผ๋„ ์ƒํƒœ์—์„œ ํŠน์ • ์ž…๋ ฅ ์ฃผํŒŒ์ˆ˜์— ์•Œ๋งž๋Š” ํ”„๋กœ๊ทธ๋žจ ๊ฐ€๋Šฅํ•œdivider์˜ ์ œ์ˆ˜๋ฅผ ๊ณ„์‚ฐํ•œ๋‹ค. ์ œ์ˆ˜์˜ ๊ณ„์‚ฐ์€ ๊ณผ๋„ ์ƒํƒœ์—์„œ ์ž…๋ ฅ ํด๋ฝ์˜ ์ฃผํŒŒ์ˆ˜๋ฅผ ๊ฐ์ง€ํ•˜๋Š” ์ •์ˆ˜ ์นด์šดํ„ฐ์™€ ์†Œ์ˆ˜ ์นด์šดํ„ฐ๋ฅผ ํ†ตํ•ด ์ด๋ฃจ์–ด์ง„๋‹ค. ์ œ์ˆ˜์˜ ๊ณ„์‚ฐ ์ดํ›„, ์ œ์•ˆํ•œ PLL์€ ๋น ๋ฅด๊ฒŒ ๋ฝ์„ ํ•˜๊ธฐ ์œ„ํ•œ ์ตœ์ ์˜ ์ „๋ฅ˜ ๊ฐ’์œผ๋กœ 3์ฐจ์˜ Charge pump PLL๋กœ ๋™์ž‘ํ•œ๋‹ค. ์ œ์•ˆํ•œ PLL์€ systemverilog๋กœ ๊ธฐ์ˆ ๋˜์—ˆ๊ณ  ์‹œ๋ฎฌ๋ ˆ์ด์…˜ ๊ฒฐ๊ณผ ์ œ์•ˆํ•œ LC PLL์€ 1 ~ 4.2GHz์˜ ์ž…๋ ฅ์ฃผํŒŒ์ˆ˜์—์„œ ๋™์ž‘ํ•˜๋ฉฐ, 1us ์ด๋‚ด์—์„œ ์„ฑ๊ณต์ ์œผ๋กœ ๋ฝ์„ ํ•œ๋‹ค. ๋˜ํ•œ, LC-VCO๊ฐ€ 40nm CMOS ๊ณต์ •์—์„œ ์„ค๊ณ„๋˜์—ˆ๊ณ , ์‹œ๋ฎฌ๋ ˆ์ด์…˜ ๊ฒฐ๊ณผ VCO์˜ ํŠœ๋‹ ๋ฒ”์œ„๊ฐ€ ์ค‘์‹ฌ ์ฃผํŒŒ์ˆ˜ 28.2GHz์„ ๊ธฐ์ค€์œผ๋กœ ยฑ9.25%์ด๊ณ , ์ค‘์‹ฌ ์ฃผํŒŒ์ˆ˜์™€ 1.1V ๊ณต๊ธ‰ ์ „์••์—์„œ 26.4mW์˜ ์ „๋ ฅ์„ ์†Œ๋ชจํ•˜๊ณ , phase noise๊ฐ€ 1MHz ์˜คํ”„์…‹์—์„œ -104.86dBc/Hz์ž„์„ ํ™•์ธํ•  ์ˆ˜ ์žˆ์—ˆ๋‹ค.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 3 CHAPTER 2 BACKGROUND ON LC PLL 4 2.1 BASIS OF PLL 4 2.2 FREQUENCY RANGE AND LOCK TIME OF PLL 11 2.2.1 FREQUENCY RANGE 11 2.2.2 LOCK TIME 13 2.3 BASIS OF LC VCO 15 CHAPTER 3 DESIGN OF LC PLL FOR DDR5 CLOCK BUFFER 18 3.1 DESIGN CONSIDERATION 18 3.2 OVERALL ARCHITECTURE 20 3.3 OPERATION PRINCIPLE 24 3.4 IMPLEMENTATION OF LC VCO 33 3.5 ALTERNATIVE DESIGN CHOICE OF LC PLL FOR DDR5 CLOCK BUFFER 35 CHAPTER 4 SIMULATION RESULT 37 4.1 PLL 37 4.2 LC VCO 42 CHAPTER 5 CONCLUSION 46 BIBLIOGRAPHY 47 ์ดˆ ๋ก 49์„
    • โ€ฆ
    corecore