A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio

A 1.2 V and 69 mW 60 GHz Multi-channel Tunable CMOS Receiver Design

A multi-channel receiver operating between 56 GHz and 70 GHz for coverage of different 60 GHz bands worldwide is implemented with a 90 nm Complementary Metal-Oxide Semiconductor (CMOS) process. The receiver containing an LNA, a frequency down-conversion mixer and a variable gain amplifier incorporating a band-pass filter is designed and implemented. This integrated receiver is tested at four channels of centre frequencies 58.3 GHz, 60.5 GHz, 62.6 GHz and 64.8 GHz, employing a frequency plan of an 8 GHz-intermediate frequency (IF). The achieved conversion gain by coarse gain control is between 4.8 dB–54.9 dB. The millimeter-wave receiver circuit is biased with a 1.2V supply voltage. The measured power consumption is 69 mW

Tunable n-path notch filters for blocker suppression: modeling and verification

N-path switched-RC circuits can realize filters with very high linearity and compression point while they are tunable by a clock frequency. In this paper, both differential and single-ended N-path notch filters are modeled and analyzed. Closed-form equations provide design equations for the main filtering characteristics and nonidealities such as: harmonic mixing, switch resistance, mismatch and phase imbalance, clock rise and fall times, noise, and insertion loss. Both an eight-path single-ended and differential notch filter are implemented in 65-nm CMOS technology. The notch center frequency, which is determined by the switching frequency, is tunable from 0.1 to 1.2 GHz. In a 50- environment, the N-path filters provide power matching in the passband with an insertion loss of 1.4–2.8 dB. The rejection at the notch frequency is 21–24 dB,P1 db> + 2 dBm, and IIP3 > + 17 dBm

Microwave Active Filter Design

A simplified method for the project and design of microwave active filters is presented here. The presented design is based on the use of an active inductor that emulates an inductor behavior by implementing a passive variable phase- and amplitude-compensating network and amplifiers, forming a gyrator-C architecture. This method can be applied with success for the design of bandpass filters with very high performances in terms of integration and application from a few hundreds of MHz to tens of GHs with filter high dynamic range and frequency tuning capability

A Q-enhanced 3.6 GHz tunable CMOS bandpass filter for wideband wireless applications

With the rapid development of information technology, more and more bandwidth is required to transmit multimedia data. Since local communication networks are moving to wireless domain, it brings up great challenges for making integrated wideband wireless front-ends suitable for these applications. RF filtering is a fundamental need in all wireless front-ends and is one of the most difficult parts to be integrated. This has been a major obstacle to the implementation of low power and low cost integrated wireless terminals. Lots of previous work has been done to make integrated RF filters applicable to these applications. However, some of these filters are not designed with standard CMOS technology. Some of them are not designed in desired frequency bands and others do not have sufficient frequency bandwidth. This research demonstrates the design of a tunable wideband RF filter that operates at 3.6 GHz and can be easily changed to a higher frequency range up to 5 GHz. This filter is superior to the previous designs in the following aspects: a) wider bandwidth, b) easier to tune, c) balancing in noise and linearity, and d) using standard CMOS technology. The design employs the state-of-the-art inductor degenerated LNA, acting as a transconductor to minimize the overall noise figure. A Q-enhancement circuit is employed to compensate the loss from lossy on-chip spiral inductors. Center frequency and bandwidth tuning circuits are also embedded to make the filter suitable for multi band operations. At first, a second order bandpass filter prototype was designed in the standard 0.18 ìm CMOS process. Simulation results showed that at 3.6 GHz center frequency and with a 60-MHz bandwidth, the input third-order intermodulation product (IIP3) and input-referred 1 dB compression point (P1dB) was -22.5 dBm and -30.5 dBm respectively. The image rejection at 500 MHz away from the center frequency was 32 dB (250 MHz intermediate frequency). The Q of the filter was tunable over 3000 and the center frequency tuning range was about 150 MHz. By cascading three stages of second order filters, a sixth order filter was designed to enhance the image rejection ability and to extend the filter bandwidth. The sixth order filter had been fabricated in the standard 0.18 ìm CMOS process using 1.8-V supply. The chip occupies only 0.9 mm 0.9 mm silicon area and has a power consumption of 130-mW. The measured center frequency was tunable from 3.54 GHz to 3.88 GHz, bandwidth was tunable from 35 MHz to 80 MHz. With a 65 MHz bandwidth, the filter had a gain of 13 dB, an IIP3 of -29 dBm and a P1dB of -46 dBm

A 0.18µm CMOS DDCCII for Portable LV-LP Filters

In this paper a current mode very low voltage (LV) (1V) and low power (LP) (21 µW) differential difference second generation current conveyor (CCII) is presented. The circuit is developed by applying the current sensing technique to a fully balanced version of a differential difference amplifier (DDA) so to design a suitable LV LP integrated version of the so-called differential difference CCII (DDCCII). Post-layout results, using a 0.18µm SMIC CMOS technology, have shown good general circuit performances making the proposed circuit suitable for fully integration in battery portable systems as, for examples, fully differential Sallen-Key bandpass filter

Design of millimeter-wave bandpass filters with broad bandwidth in Si-based technology

In this paper, a novel design approach is proposed for on-chip bandpass filter (BPF) design with improved passband flatness and stopband suppression. The proposed approach simply uses a combination of meander-line structures with metal-insulator-metal (MIM) capacitors. To demonstrate the insight of this approach, a simplified equivalent LC-circuit model is used for theoretical analysis. Using the analyzed results as a guideline along with a full-wave electromagnetic (EM) simulator, two BPFs are designed and implemented in a standard 0.13-μm (Bi)-CMOS technology. The measured results show that good agreements between EM simulated and measured results are achieved. For the first BPF, the return loss is better than 10 dB from 13.5 to 32 GHz, which indicates a fractional bandwidth (FBW) of more than 78%. In addition, the minimum insertion loss of 2.3 dB is achieved within the frequency range from 17 to 27 GHz and the in-band magnitude ripple is less than 0.1 dB. The chip size of this design, excluding the pads, is 0.148 mm 2 . To demonstrate a miniaturized design, a second design example is given. The return loss is better than 10 dB from 17.3 to 35.9 GHz, which indicates an FBW of more than 70%. In addition, the minimum insertion loss of 2.6 dB is achieved within the frequency range from 21.4 to 27.7 GHz and the in-band magnitude ripple is less than 0.1 dB. The chip size of the second design, excluding the pads, is only 0.066 mm 2 .Peer reviewe

A dual-mode Q-enhanced RF front-end filter for 5 GHz WLAN and UWB with NB interference rejection

The 5 GHz Wireless LAN (802.11a) is a popular standard for wireless indoor communications providing moderate range and speed. Combined with the emerging ultra Wideband standard (UWB) for short range and high speed communications, the two standards promise to fulfil all areas of wireless application needs. However, due to the overlapping of the two spectrums, the stronger 802.11a signals tend to interfere causing degradation to the UWB receiver. This presents one of the main technical challenges preventing the wide acceptance of UWB. The research work presented in this thesis is to propose a low cost RF receiver front-end filter topology that would resolve the narrowband (NB) interference to UWB receiver while being operable in both 802.11a mode and UWB mode. The goal of the dual mode filter design is to reduce cost and complexity by developing a fully integrated front-end filter. The filter design utilizes high Q passive devices and Q-enhancement technique to provide front-end channel-selection in NB mode and NB interference rejection in UWB mode. In the 802.11a NB mode, the filter has a tunable gain of 4 dB to 25 dB, NF of 8 dB and an IIP3 between -47 dBm and -18 dBm. The input impedance is matched at -16 dB. The frequency of operation can be tuned from 5.15 GHz to 5.35 GHz. In the UWB mode, the filter has a gain of 0 dB to 8 dB across 3.1 GHz to 9 GHz. The filter can reject the NB interference between 5.15 GHz to 5.35 GHz at up to 60 dB. The Q of the filter is tunable up to a 250 while consuming a maximum of 23.4 mW of power. The fully integrated dual mode filter occupies a die area of 1.1 mm2