Systematic Comparison of HF CMOS Transconductors

Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties. Based on bandwidth considerations, simple V-I kernels with few or no internal nodes are preferred. In a systematic way, virtually all simple kernels published in literature are generated. This is done in two steps: 1) basic 3-terminal transconductors are covered and 2) then five different techniques to combine two of them in a composite V-I kernel. In order to compare transconductors in a fair way, a normalized signal-to-noise ratio (NSNR) is defined. The basic V-I kernels and the five classes of composite V-I kernels are then compared, leading to insight in the key mechanisms that affect NSNR. Symbolic equations are derived to estimate NSNR, while simulations with more advanced MOSFET models verify the results. The results show a strong tradeoff between NSNR and transconductance tuning range. Resistively generated MOSFETs render the best NSNR results and are robust for future technology developments

Circuits for Analog Signal Processing Employing Unconventional Active Elements

Disertační práce se zabývá zaváděním nových struktur moderních aktivních prvků pracujících v napěťovém, proudovém a smíšeném režimu. Funkčnost a chování těchto prvků byly ověřeny prostřednictvím SPICE simulací. V této práci je zahrnuta řada simulací, které dokazují přesnost a dobré vlastnosti těchto prvků, přičemž velký důraz byl kladen na to, aby tyto prvky byly schopny pracovat při nízkém napájecím napětí, jelikož poptávka po přenosných elektronických zařízeních a implantabilních zdravotnických přístrojích stále roste. Tyto přístroje jsou napájeny bateriemi a k tomu, aby byla prodloužena jejich životnost, trend navrhování analogových obvodů směřuje k stále většímu snižování spotřeby a napájecího napětí. Hlavním přínosem této práce je návrh nových CMOS struktur: CCII (Current Conveyor Second Generation) na základě BD (Bulk Driven), FG (Floating Gate) a QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) na základě FG, transkonduktor na základě nové techniky BD_QFG (Bulk Driven_Quasi Floating Gate), CCCDBA (Current Controlled Current Differencing Buffered Amplifier) na základě GD (Gate Driven), VDBA (Voltage Differencing Buffered Amplifier) na základě GD a DBeTA (Differential_Input Buffered and External Transconductance Amplifier) na základě BD. Dále je uvedeno několik zajímavých aplikací užívajících výše jmenované prvky. Získané výsledky simulací odpovídají teoretickým předpokladům.The dissertation thesis deals with implementing new structures of modern active elements working in voltage_, current_, and mixed mode. The functionality and behavior of these elements have been verified by SPICE simulation. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of those elements. However, a big attention to implement active elements by utilizing LV LP (Low Voltage Low Power) techniques is given in this thesis. This attention came from the fact that growing demand of portable electronic equipments and implantable medical devices are pushing the development towards LV LP integrated circuits because of their influence on batteries lifetime. More specifically, the main contribution of this thesis is to implement new CMOS structures of: CCII (Current Conveyor Second Generation) based on BD (Bulk Driven), FG (Floating Gate) and QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) based on FG; Transconductor based on new technique of BD_QFG (Bulk Driven_Quasi Floating Gate); CCCDBA (Current Controlled Current Differencing Buffered Amplifier) based on conventional GD (Gate Driven); VDBA (Voltage Differencing Buffered Amplifier) based on GD. Moreover, defining new active element i.e. DBeTA (Differential_Input Buffered and External Transconductance Amplifier) based on BD is also one of the main contributions of this thesis. To confirm the workability and attractive properties of the proposed circuits many applications were exhibited. The given results agree well with the theoretical anticipation.

A Low-Voltage Electronically Tunable MOSFET-C Voltage-Mode First-Order All-Pass Filter Design

This paper presents a simple electronically tunable voltage-mode first-order all-pass filter realization with MOSFET-C technique. In comparison to the classical MOSFET-C filter circuits that employ active elements including large number of transistors the proposed circuit is only composed of a single two n-channel MOSFET-based inverting voltage buffer, three passive components, and one NMOS-based voltage-controlled resistor, which is with advantage used to electronically control the pole frequency of the filter in range 103 kHz to 18.3 MHz. The proposed filter is also very suitable for low-voltage operation, since between its supply rails it uses only two MOSFETs. In the paper the effect of load is investigated. In addition, in order to suppress the effect of non-zero output resistance of the inverting voltage buffer, two compensation techniques are also introduced. The theoretical results are verified by SPICE simulations using PTM 90 nm level-7 CMOS process BSIM3v3 parameters, where +/- 0.45 V supply voltages are used. Moreover, the behavior of the proposed filter was also experimentally measured using readily available array transistors CD4007UB by Texas Instruments

Low Voltage Low Power Analogue Circuits Design

Disertační práce je zaměřena na výzkum nejběžnějších metod, které se využívají při návrhu analogových obvodů s využití nízkonapěťových (LV) a nízkopříkonových (LP) struktur. Tyto LV LP obvody mohou být vytvořeny díky vyspělým technologiím nebo také využitím pokročilých technik návrhu. Disertační práce se zabývá právě pokročilými technikami návrhu, především pak nekonvenčními. Mezi tyto techniky patří využití prvků s řízeným substrátem (bulk-driven - BD), s plovoucím hradlem (floating-gate - FG), s kvazi plovoucím hradlem (quasi-floating-gate - QFG), s řízeným substrátem s plovoucím hradlem (bulk-driven floating-gate - BD-FG) a s řízeným substrátem s kvazi plovoucím hradlem (quasi-floating-gate - BD-QFG). Práce je také orientována na možné způsoby implementace známých a moderních aktivních prvků pracujících v napěťovém, proudovém nebo mix-módu. Mezi tyto prvky lze začlenit zesilovače typu OTA (operational transconductance amplifier), CCII (second generation current conveyor), FB-CCII (fully-differential second generation current conveyor), FB-DDA (fully-balanced differential difference amplifier), VDTA (voltage differencing transconductance amplifier), CC-CDBA (current-controlled current differencing buffered amplifier) a CFOA (current feedback operational amplifier). Za účelem potvrzení funkčnosti a chování výše zmíněných struktur a prvků byly vytvořeny příklady aplikací, které simulují usměrňovací a induktanční vlastnosti diody, dále pak filtry dolní propusti, pásmové propusti a také univerzální filtry. Všechny aktivní prvky a příklady aplikací byly ověřeny pomocí PSpice simulací s využitím parametrů technologie 0,18 m TSMC CMOS. Pro ilustraci přesného a účinného chování struktur je v disertační práci zahrnuto velké množství simulačních výsledků.The dissertation thesis is aiming at examining the most common methods adopted by analog circuits' designers in order to achieve low voltage (LV) low power (LP) configurations. The capability of LV LP operation could be achieved either by developed technologies or by design techniques. The thesis is concentrating upon design techniques, especially the non–conventional ones which are bulk–driven (BD), floating–gate (FG), quasi–floating–gate (QFG), bulk–driven floating–gate (BD–FG) and bulk–driven quasi–floating–gate (BD–QFG) techniques. The thesis also looks at ways of implementing structures of well–known and modern active elements operating in voltage–, current–, and mixed–mode such as operational transconductance amplifier (OTA), second generation current conveyor (CCII), fully–differential second generation current conveyor (FB–CCII), fully–balanced differential difference amplifier (FB–DDA), voltage differencing transconductance amplifier (VDTA), current–controlled current differencing buffered amplifier (CC–CDBA) and current feedback operational amplifier (CFOA). In order to confirm the functionality and behavior of these configurations and elements, they have been utilized in application examples such as diode–less rectifier and inductance simulations, as well as low–pass, band–pass and universal filters. All active elements and application examples have been verified by PSpice simulator using the 0.18 m TSMC CMOS parameters. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of structures.

An Ultra-Low-Power Track-and-Hold Amplifier

The future of electronics is the Internet of Things (IoT) paradigm, where always-on devices and sensors monitor and transform everyday life. A plethora of applications (such as navigating drivers past road hazards or monitoring bridge and building stresses) employ this technology. These unattended ground-sensor applications require decade(s)-long operational life-times without battery changes. Such electronics demand stringent performance specifications with only nano-Watt power levels.This thesis presents an ultra-low-power track-and-hold amplifier for such systems. It serves as the front-end of a SAR-ADC or the building block for equalizers or filters. This amplifier\u27s design attains exceptional hold times by mitigating switch subthreshold leakage and bulk leakage. Its novel transmission-gate topology achieves wide-swing performance. Though only consuming 100 pico-Watts, it achieves a precision of 7.6 effective number of bits (ENOB). The track-and-hold amplifier was designed in 130-nm CMOS

Metodologia Per la Caratterizzazione di amplificatori a basso rumore per UMTS

In questo lavoro si presenta una metodologia di progettazione elettronica a livello di sistema, affrontando il problema della caratterizzazione dello spazio di progetto dell' amplificatore a basso rumore costituente il primo stadio di un front end a conversione diretta per UMTS realizzato in tecnologia CMOS con lunghezza di canale .18u. La metodologia è sviluppata al fine di valutare in modo quantititativo le specifiche ottime di sistema per il front-end stesso e si basa sul concetto di Piattaforma Analogica, che prevede la costruzione di un modello di prestazioni per il blocco analogico basato su campionamento statistico di indici di prestazioni del blocco stesso, misurati tramite simulazione di dimensionamenti dei componenti attivi e passivi soddisfacenti un set di equazioni specifico della topologia circuitale. Gli indici di prestazioni vengono successivamente ulizzati per parametrizzare modelli comportamentali utilizzati nelle fasi di ottimizzazione a livello di sistema. Modelli comportamentali atti a rappresentare i sistemi RF sono stati pertanto studiati per ottimizzare la scelta delle metriche di prestazioni. L'ottimizzazione dei set di equazioni atti a selezionare le configurazione di interesse per il campionamento ha al tempo stesso richiesto l'approfondimento dei modelli di dispositivi attivi validi in tutte le regioni di funzionamento, e lo studio dettagliato della progettazione degli amplificatori a basso rumore basati su degenerazione induttiva. Inoltre, il problema della modellizzazione a livello di sistema degli effetti della comunicazione tra LNA e Mixer è stato affrontato proponendo e analizzando diverse soluzioni. Il lavoro ha permesso di condurre un'ottimizzazione del front-end UMTS, giungendo a specifiche ottime a livello di sistema per l'amplificatore stesso

Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies

The International Technology Roadmap for Semiconductors predicts that the nominal power supply voltage, VDD, will fall to 0.7 V by the end of the bulk CMOS era. At that time, it is expected that the long-channel threshold voltage of a MOSFET, VT0, will rise to 35.5% of VDD in order to maintain acceptable off-state leakage characteristics in digital systems. Given the recent push for system-on-a-chip integration, this increasing trend in VT0/VDD poses a serious threat to the future of analog design because it causes traditional analog circuit topologies to experience progressively problematic signal swing limitations in each new process generation. To combat the process-scaling-induced signal swing limitations of analog circuitry, researchers have proposed the use of bulk-driven MOSFETs. By using the bulk terminal as an input rather than the gate, the bulk-driven MOSFET makes it possible to extend the applicability of any analog cell to extremely low power supply voltages because VT0 does not appear in the device\u27s input signal path. Since the viability of the bulk-driven technique was first investigated in a 2 um p-well process, there have been numerous reports of low-voltage analog designs incorporating bulk-driven MOSFETs in the literature - most of which appear in technologies with feature sizes larger than 0.18 um. However, as of yet, no effort has been undertaken to understand how sub-micron process scaling trends have influenced the performance of a bulk-driven MOSFET, let alone make the device more adaptable to the deca-nanometer technologies widely used in the analog realm today. Thus, to further the field\u27s understanding of the bulk-driven MOSFET, this dissertation aims to examine the implications of scaling the device into a standard 90 nm bulk CMOS process. This dissertation also describes how the major disadvantages of a bulk-driven MOSFET - i.e., its reduced intrinsic gain, its limited frequency response and its large layout area requirement - can be mitigated through modifications to the device\u27s vertical doping profile and well structure. To gauge the potency of the proposed process changes, an optimized n-type bulk-driven MOSFET has been designed in a standard 90 nm bulk CMOS process via the 2-D device simulator, ATLAS

Biomedical integrated circuit design for an electro-therapy device : a thesis presented in partial fulfilment of the requirements for the degree of Doctor of Philosophy in Electronics and Computer Engineering (Bioelectronics) at School of Engineering and Advanced Technology, Massey University, Albany Campus, New Zealand

Journal articles in Appendix A removed for copyright reasons. Chapters 3, 4 and 5 published respectively as: Abbas Al-Darkazly, Ibtisam A., & Hasan, S. M. Rezaul. (2016). A waveform generator circuit for extra low‐frequency CMOS micro‐power applications, International Journal of Circuit Theory and Applications, 44, 266-279. https://doi-org.ezproxy.massey.ac.nz/10.1002/cta.2074 Abbas Al-Darkazly, Ibtisam A., & Hasan, S. M. Rezaul. (2016). Dual-band waveform generator with ultra-wide low-frequency tuning-range, IEEE Access, 4, 3169-3181. DOI: 10.1109/ACCESS.2016.2557843 Abbas Al-Darkazly, Ibtisam A., & Hasan, S. M. Rezaul. (2017). Optimized low-power CMOS active-electrode-pair for low-frequency multi-channel biomedical stimulation, Microelectronics Journal, 66, 18-24. https://doi-org.ezproxy.massey.ac.nz/10.1016/j.mejo.2017.05.014A biomedical integrated circuit design (IC) is utilized for the development of a novel non-invasive electro-therapy device, for low frequency multi-channel biomedical stimulation to transform immune activity and induce anti-viral state. Biomedical integrated circuit design is an important branch of modern electronic engineering that uses the application of electronic engineering principles for biomedical disciplines, to develop bioelectronics devices that are implanted within the body and for non-invasive devices to improve patient’s lives. These devices use the application of an electric field to stimulate reactions to restore normal cell functions and activate the cells to treat a variety of disorders or disease conditions. Bioelectronics devices can be designed for use as alternative treatments to overcome the deficiencies of several conventional medical treatments. It could potentially assist as drug-free relief when therapeutic drugs become ineffective, costly, with serious side effects and cannot be replaced, loss of future treatment options, and hence, life threatening, as for drug resistant Human immunodeficiency virus (HIV-1) patients. Since the underlying mechanisms of the biological system and disease state is dominated by electrostatic interactions, specifically, the interaction between HIV-1 and the host cell that is predominantly by electrostatic interactions (protein charge-charge interaction) has an important role in its life cycle replication. At given pulses, the charge distribution and polarization of the electro-active protein molecules takes place, inducing conformation change which can enhance immune activity and inhibit the interaction of HIV-1 and host cells, disturbing its life cycle, leading to the mechanisms of the inactivation signal-induced virus death. These electrically induced protein transformations is used in this research as blood-cell treatment and as anti-HIV-1 electrotherapy. Advances in bioelectronics technology, which involve new CMOS IC design, and in bio-electrochemistry science, which include cellular function, electro-active biomolecules and their responses, have contributed to this project to develop the concept of a novel electro-therapy device, for biomedical treatment applications. This involves understanding of the underlying mechanisms of the biological system and disease condition from an electronic engineer’s point of view as well as the interface between the electronic signal and the biological cells, and how electronic devices and circuitry directly communicate with the electro-active body tissue and blood cells. This research project addresses the design and development of a novel energy efficient miniature biomedical device using a new CMOS technology. It can generate, deliver and control an appropriate periodical low frequency electrical pulses, through the low-resistance skin surface to a patient’s blood. The notable feature of such a smart device is its cellular specificity: the parameters of the generated electrical pulse which are designed and selected in order to stimulate only one particular type of tissue (blood) leaving the others unaffected. The device comprises a mixed-signal low power dualband waveform generator (WFG) chip along with a novel two band tuning system. It was fabricated using Global Foundries (GF) 8RF-DM 130-nm CMOS process with a supply voltage of ±1V for the analog circuit and +1V for logic circuits. The WFG core (band I) can be tuned in the range 6.44 kHz - 1003 kHz through bias current adjustment, while a lower frequency (band II) in the range 0.1 Hz to 502 kHz can be provided digitally. Two WFG approaches, that comprise relaxation oscillators with different relaxation timing networks, have been developed for comparison. Since the aim of this work is to transfer electrical signal in a specifically controlled fashion through the tissue, a novel low power active electrode-pair signal delivery system, compatible with human skin with high signal integrity, is developed. The circuit was fabricated in a 130-nm CMOS process using a low supply-voltage of +1.2V to deliver bi-phase square waveform signals from 16 selectable low-frequency channels. The individual active electrode can also be used to deliver mono-phase square/triangular waveform output signals. Accuracy, safety, low power, light-weight, miniature and low-cost characteristics are the main concerns. Being a miniature bioelectronics component with low power consumption, the proposed device is suitable both as a non-invasive and as an implantable biomedical device, in which WFG and electrodes circuitry can communicate with the electro-active biomolecule, strongly stimulating certain events in a complex biological system. A theoretical analysis, experiment design and performance are carried out in invitro environments to examine the effect of the designed signal on human blood cellular proteins. Proteins that display a heterogeneous structure have various conductivities and permittivity (determining the interaction with the electrical field) and possess dielectric properties with a large conformation change, undergoing structural rearrangements in response to cellular signals. The frequency-dependent dielectric present in proteins involves the redistribution and alignment of the proteins charged molecule and its polar molecule in response to an applied external electrical field can also induce conformation change. Interference polarization within proteins could interrupt the interaction between both sides of predominantly host cell proteins and of the HIV-1 infective envelope and its protein particles. This could disturb the signalling proteins for cell activation, and, hence, the virus cannot conjugate with the target cells and control the host cell protein activity. Since the virus is unable to reproduce out of a host cell, hence the virus cannot mutate and develop resistance easily, and use alternative binding and entry mechanisms as in the pharmacological approaches. After carefully studying the interaction of the HIV-1 virus and the host cell, with respect to signal transfer, CD4 receptor, co-receptors CCR5 and nuclear transport factor nucleoporins FGNup153 proteins of the lymphatic system, which are essential targets for HIV-1 infection and its life cycle replication represent an attractive target to investigate in this research project. The activities of the underlying mechanism of the target cell are then examined utilizing immunofluorescence microscopy technique with specific fluorescent labelled antibodies, and accurate results are obtained with relatively low cost. The results demonstrated that the low frequency electrical pulse could inhibit virus attachment and fusion. It is also could provide a permeability barrier, that prevents the import and export of large macromolecule virus particles through the nuclear pore complex. These effects could induce an antiviral state for a period of time, and stope HIV-1 virus replication, with no potential risks and harm to the host cells, compared to the common drugs. This is promising for the conception of HIV-1 treatment in vivo. Although further investigations are required in order to fully use the application of electrical stimulation in vivo for treatment, the result is provides the necessary impetus for the applications of low frequency electrical stimulation on human immune response. This might offer important antiviral therapy against the most devastating pathogens in human history. This doctoral research is not only of academic interest but also highly relevant to medical applications. It is considered potentially beneficial in the development of knowledge in advanced technology for electro-medical treatment devices, their design, structure and applications to extend life, and for future growth in the biotechnology industry, therefore beneficial for the patients, physicians and for humanity