A New Technique for the Design of Multi-Phase Voltage Controlled Oscillators

© 2017 World Scientific Publishing Company.In this work, a novel circuit structure for second-harmonic multi-phase voltage controlled oscillator (MVCO) is presented. The proposed MVCO is composed of (Formula presented.) ((Formula presented.) being an integer number and (Formula presented.)2) identical inductor–capacitor ((Formula presented.)) tank VCOs. In theory, this MVCO can provide 2(Formula presented.) different phase sinusoidal signals. A six-phase VCO based on the proposed structure is designed in a TSMC 0.18(Formula presented.)um CMOS process. Simulation results show that at the supply voltage of 0.8(Formula presented.)V, the total power consumption of the six-phase VCO circuit is about 1(Formula presented.)mW, the oscillation frequency is tunable from 2.3(Formula presented.)GHz to 2.5(Formula presented.)GHz when the control voltage varies from 0(Formula presented.)V to 0.8(Formula presented.)V, and the phase noise is lower than (Formula presented.)128(Formula presented.)dBc/Hz at 1(Formula presented.)MHz offset frequency. The proposed MVCO has lower phase noise, lower power consumption and more outputs than other related works in the literature.Peer reviewedFinal Accepted Versio

A Noise-Shifting Differential Colpitts VCO

A novel noise-shifting differential Colpitts VCO is presented. It uses current switching to lower phase noise by cyclostationary noise alignment and improve the start-up condition. A design strategy is also devised to enhance the phase noise performance of quadrature coupled oscillators. Two integrated VCOs are presented as design examples

Quadrature LC VCO with passive coupling and phase combining network

A circuit and method for generating a signal is disclosed. The circuit includes a set of wide tuning LC tanks, a set of core transistors cross coupled to the set of wide tuning LC tanks, and a combining network coupled to the set of wide tuning LC tanks and the set of core transistors. The combining network further includes a set of inputs connected to the set of wide tuning LC tanks and the set of core transistors, a set of coupling transistors connected to the set of inputs, a set of source inductors connected to the set of coupling transistors, a coupling capacitor connected to the set of source inductors, a load resistor connected to the coupling capacitor. The combining network combines the set of inputs and the signal is delivered to the load resistor as a fourth order harmonic.Board of Regents, University of Texas Syste

A wideband linear tunable CDTA and its application in field programmable analogue array

This document is the Accepted Manuscript version of the following article: Hu, Z., Wang, C., Sun, J. et al. ‘A wideband linear tunable CDTA and its application in field programmable analogue array’, Analog Integrated Circuits and Signal Processing, Vol. 88 (3): 465-483, September 2016. Under embargo. Embargo end date: 6 June 2017. The final publication is available at Springer via https://link.springer.com/article/10.1007%2Fs10470-016-0772-7 © Springer Science+Business Media New York 2016In this paper, a NMOS-based wideband low power and linear tunable transconductance current differencing transconductance amplifier (CDTA) is presented. Based on the NMOS CDTA, a novel simple and easily reconfigurable configurable analogue block (CAB) is designed. Moreover, using the novel CAB, a simple and versatile butterfly-shaped FPAA structure is introduced. The FPAA consists of six identical CABs, and it could realize six order current-mode low pass filter, second order current-mode universal filter, current-mode quadrature oscillator, current-mode multi-phase oscillator and current-mode multiplier for analog signal processing. The Cadence IC Design Tools 5.1.41 post-layout simulation and measurement results are included to confirm the theory.Peer reviewedFinal Accepted Versio

A Robust 43-GHz VCO in CMOS for OC-768 SONET Applications

In this paper, we present a 43-GHz LC-VCO in 0.13-/spl mu/m CMOS for use in SONET OC-768 optical networks. A tuned output buffer is used to provide 1.3 V/sub p-p/ (single-ended) into a 90-fF capacitive load as is required when the VCO is used in typical clock and data recovery (CDR) circuits. Phase noise is -90 dBc/Hz at a 1-MHz offset from the carrier; this meets SONET jitter specifications. The design has a tune range of 4.2%. The VCO, including output buffers, consumes 14 mA from a 1-V supply and occupies 0.06 mm/sup 2/ of die area. Modern CMOS process characteristics and the high center frequency of this design mean that the tank loss is not dominated by the integrated inductor, but rather by the tank capacitance. An area-efficient inductor design that does not require any optimization is used

Silicon-based distributed voltage-controlled oscillators

Distributed voltage-controlled oscillators (DVCOs) are presented as a new approach to the design of silicon VCOs at microwave frequencies. In this paper, the operation of distributed oscillators is analyzed and the general oscillation condition is derived, resulting in analytical expressions for the frequency and amplitude. Two tuning techniques for DVCOs are demonstrated, namely, the inherent-varactor tuning and delay-balanced current-steering tuning. A complete analysis of the tuning techniques is presented. CMOS and bipolar DVCOs have been designed and fabricated in a 0.35-μm BiCMOS process. A 10-GHz CMOS DVCO achieves a tuning range of 12% (9.3-10.5 GHz) and a phase noise of -103 dBc/Hz at 600 kHz offset from the carrier. The oscillator provides an output power of -4.5 dBm without any buffering, drawing 14 mA of dc current from a 2.5-V power supply. A 12-GHz bipolar DVCO consuming 6 mA from a 2.5-V power supply is also demonstrated. It has a tuning range of 26% with a phase noise of -99 dBc/Hz at 600 kHz offset from the carrier

Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications

In this paper, a 4.2-5.4 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mu m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase noise is -110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation-mode varactors. Phase noise was also found to be relatively low because of taking advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm(2) on Si substrate, including DC and RF pads

Concepts and methods in optimization of integrated LC VCOs

Underlying physical mechanisms controlling the noise properties of oscillators are studied. This treatment shows the importance of inductance selection for oscillator noise optimization. A design strategy centered around an inductance selection scheme is executed using a practical graphical optimization method to optimize phase noise subject to design constraints such as power dissipation, tank amplitude, tuning range, startup condition, and diameters of spiral inductors. The optimization technique is demonstrated through a design example, leading to a 2.4-GHz fully integrated, LC voltage-controlled oscillator (VCO) implemented using 0.35-μm MOS transistors. The measured phase-noise values are -121, -117, and -115 dBc/Hz at 600-kHz offset from 1.91, 2.03, and 2.60-GHz carriers, respectively. The VCO dissipates 4 mA from a 2.5-V supply voltage. The inversion mode MOSCAP tuning is used to achieve 26% of tuning range. Two figures of merit for performance comparison of various oscillators are introduced and used to compare this work to previously reported results