A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio

Digitally-Enhanced Software-Defined Radio Receiver Robust to Out-of-Band Interference

A software-defined radio (SDR) receiver with improved robustness to out-of-band interference (OBI) is presented. Two main challenges are identified for an OBI-robust SDR receiver: out-of-band nonlinearity and harmonic mixing. Voltage gain at RF is avoided, and instead realized at baseband in combination with low-pass filtering to mitigate blockers and improve out-of-band IIP3. Two alternative “iterative” harmonic-rejection (HR) techniques are presented to achieve high HR robust to mismatch: a) an analog two-stage polyphase HR concept, which enhances the HR to more than 60 dB; b) a digital adaptive interference cancelling (AIC) technique, which can suppress one dominating harmonic by at least 80 dB. An accurate multiphase clock generator is presented for a mismatch-robust HR. A proof-of-concept receiver is implemented in 65 nm CMOS. Measurements show 34 dB gain, 4 dB NF, and 3.5 dBm in-band IIP3 while the out-of-band IIP3 is + 16 dBm without fine tuning. The measured RF bandwidth is up to 6 GHz and the 8-phase LO works up to 0.9 GHz (master clock up to 7.2 GHz). At 0.8 GHz LO, the analog two-stage polyphase HR achieves a second to sixth order HR > dB over 40 chips, while the digital AIC technique achieves HR > 80 dB for the dominating harmonic. The total power consumption is 50 mA from a 1.2 V supply

Design and characterization of downconversion mixers and the on-chip calibration techniques for monolithic direct conversion radio receivers

This thesis consists of eight publications and an overview of the research topic, which is also a summary of the work. The research described in this thesis is focused on the design of downconversion mixers and direct conversion radio receivers for UTRA/FDD WCDMA and GSM standards. The main interest of the work is in the 1-3 GHz frequency range and in the Silicon and Silicon-Germanium BiCMOS technologies. The RF front-end, and especially the mixer, limits the performance of direct conversion architecture. The most stringent problems are involved in the second-order distortion in mixers to which special attention has been given. The work introduces calibration techniques to overcome these problems. Some design considerations for front-end radio receivers are also given through a mixer-centric approach. The work summarizes the design of several downconversion mixers. Three of the implemented mixers are integrated as the downconversion stages of larger direct conversion receiver chips. One is realized together with the LNA as an RF front-end. Also, some stand-alone structures have been characterized. Two of the mixers that are integrated together with whole analog receivers include calibration structures to improve the second-order intermodulation rejection. A theoretical mismatch analysis of the second-order distortion in the mixers is also presented in this thesis. It gives a comprehensive illustration of the second-order distortion in mixers. It also gives the relationships between the dc-offsets and high IIP2. In addition, circuit and layout techniques to improve the LO-to-RF isolation are discussed. The presented work provides insight into how the mixer immunity against the second-order distortion can be improved. The implemented calibration structures show promising performance. On the basis of these results, several methods of detecting the distortion on-chip and the possibilities of integrating the automatic on-chip calibration procedures to produce a repeatable and well-predictable receiver IIP2 are presented.reviewe

Flexible Receivers in CMOS for Wireless Communication

Consumers are pushing for higher data rates to support more services that are introduced in mobile applications. As an example, a few years ago video-on-demand was only accessed through landlines, but today wireless devices are frequently used to stream video. To support this, more flexible network solutions have merged in 4G, introducing new technical problems to the mobile terminal. New techniques are thus needed, and this dissertation explores five different ideas for receiver front-ends, that are cost-efficient and flexible both in performance and operating frequency. All ideas have been implemented in chips fabricated in 65 nm CMOS technology and verified by measurements. Paper I explores a voltage-mode receiver front-end where sub-threshold positive feedback transistors are introduced to increase the linearity in combination with a bootstrapped passive mixer. Paper II builds on the idea of 8-phase harmonic rejection, but simplifies it to a 6-phase solution that can reject noise and interferers at the 3rd order harmonic of the local oscillator frequency. This provides a good trade-off between the traditional quadrature mixer and the 8- phase harmonic rejection mixer. Furthermore, a very compact inductor-less low noise amplifier is introduced. Paper III investigates the use of global negative feedback in a receiver front-end, and also introduces an auxiliary path that can cancel noise from the main path. In paper IV, another global feedback based receiver front-end is designed, but with positive feedback instead of negative. By introducing global positive feedback, the resistance of the transistors in a passive mixer-first receiver front-end can be reduced to achieve a lower noise figure, while still maintaining input matching. Finally, paper V introduces a full receiver chain with a single-ended to differential LNA, current-mode downconversion mixers, and a baseband circuity that merges the functionalities of the transimpedance amplifier, channel-select filter, and analog-to-digital converter into one single power-efficient block

Saw-Less radio receivers in CMOS

Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios

Configurable circuits and their impact on multi-standard RF front-end architectures

This thesis studies configurable circuits and their impact on multi-standard RF front-end architectures. In particular, low-voltage low-power linear LNA and mixer topologies suitable for implementation in multi-standard front-ends are subject of the investigation. With respect to frequency and bandwidth, multi-standard front-ends can be implemented using either tunable or wideband LNA and mixer topologies. Based on the type of the LNA and mixer(s), multi-standard receiver RF front-ends can be divided into three groups. They can be (tunable) narrow-band, wide-band or combined. The advantages and disadvantages of the different multi-standard receiver RF front-ends have been discussed in detail. The partitioning between off-chip selectivity, on-chip selectivity provided by the LNA and mixer, linearity, power consumption and occupied chip area in each multi-standard RF front-end group are thoroughly investigated. A Figure of Merit (FOM) for the multi-standard receiver RF front-end has been introduced. Based on this FOM the most suitable multi-standard RF front-end group in terms of cost-effectiveness can be selected. In order to determine which multi-standard RF front-end group is the most cost-effective for a practical application, a GSM850/E-GSM/DCS/PCS/Bluetooth/WLANa/b/g multi-standard receiver RF front-end is chosen as a demonstrator. These standards are the most frequently used standards in wireless communication, and this combination of standards allows to users almost "anytime-anywhere" voice and data transfer. In order to verify these results, three demonstrators have been defined, designed and implemented, two wideband RF front-end circuits in 90nm CMOS and 65nm CMOS, and one combined multi-standard RF front-end circuit in 65nm CMOS. The proposed multi-standard demonstrators have been compared with the state-of the art narrow-band, wide-band and combined multi-standard RF front-ends. On the proposed multi-standard RF front-ends and the state-of the art multi-standard RF front-ends the proposed FOM have been applied. The comparison shows that the combined multi-standard RF front-end group is the most cost effective multi-standard group for this application

High Performance LNAs and Mixers for Direct Conversion Receivers in BiCMOS and CMOS Technologies

The trend in cellular chipset design today is to incorporate support for a larger number of frequency bands for each new chipset generation. If the chipset also supports receiver diversity two low noise amplifiers (LNAs) are required for each frequency band. This is however associated with an increase of off-chip components, i.e. matching components for the LNA inputs, as well as complex routing of the RF input signals. If balanced LNAs are implemented the routing complexity is further increased. The first presented work in this thesis is a novel multiband low noise single ended LNA and mixer architecture. The mixer has a novel feedback loop suppressing both second order distortion as well as DC-offset. The performance, verified by Monte Carlo simulations, is sufficient for a WCDMA application. The second presented work is a single ended multiband LNA with programmable integrated matching. The LNA is connected to an on-chip tunable balun generating differential RF signals for a differential mixer. The combination of the narrow band input matching and narrow band balun of the presented LNA is beneficial for suppressing third harmonic downconversion of a WLAN interferer. The single ended architecture has great advantages regarding PCB routing of the RF input signals but is on the other hand more sensitive to common mode interferers, e.g. ground, supply and substrate noise. An analysis of direct conversion receiver requirements is presented together with an overview of different LNA and mixer architectures in both BiCMOS and CMOS technology

Linearity vs. Power Consumption of CMOS LNAs in LTE Systems

This paper presents a study of linearity in wideband CMOS low noise amplifiers (LNA) and its relationship to power consumption in context of Long Term Evolution (LTE) system. Using proposed figure of merit to compare 35 state-of-the-art LNA circuits published in recent years, the paper shows a proportional but relatively weak dependence between amplifier performance (that is combined linearity, noise figure and gain) with power consumption. As a result, the predicted increase of LNA performance, necessary to satisfy stringent linearity specifications of LTE standard, may require a significant increase in power, a critical budget planning aspect for both handheld devices and base stations operating in small cells

Low-noise amplifiers for integrated multi-mode direct-conversion receivers

The evolution of wireless telecommunication systems during the last decade has been rapid. During this time the design driver has shifted towards fast data applications instead of speech. In addition, the different systems may have a limited coverage, for example, limited to urban areas only. Thus, it has become important for a mobile terminal to be able to use different wireless systems, depending on the application chosen and the location of the terminal. The choice of receiver architecture affects the performance, size, and cost of the receiver. The superheterodyne receiver has hitherto been the dominant radio architecture, because of its good sensitivity and selectivity. However, superheterodyne receivers require expensive filters, which, with the existing technologies, cannot be integrated on the same chip as the receiver. Therefore, architectures using a minimum number of external components, such as direct conversion, have become popular. In addition, compared to the superheterodyne architecture, the direct-conversion architecture has benefits when multi-mode receivers, which are described in this thesis, are being designed. In this thesis, the limitations placed on the analog receiver by different system specifications are introduced. The estimations for the LNA specifications are derived from these specifications. In addition, the limitations imposed by different types of receiver architectures are described. The inductively-degenerated LNA is the basis for all the experimental circuits. The different components for this configuration are analyzed and compared to other commonly-used configurations in order to justify the use of an inductively-degenerated LNA. Furthermore, the design issues concerning the LNA-mixer interface in direct-conversion receivers are analyzed. Without knowing these limitations, it becomes difficult to understand the choices made in the experimental circuits. One of the key parts of this thesis describes the design and implementation of a single-chip multi-mode LNA, which is one of the key blocks in multi-mode receivers. The multi-mode structures in this thesis were developed for a direct-conversion receiver where only one system is activated at a time. The LNA interfaces to a pre-select filter and mixers and the different LNA components are analyzed in detail. Furthermore, the design issues related to possible interference from additional systems on single-chip receivers are analyzed and demonstrated. A typical receiver includes variable gain, which can be implemented both in the analog baseband and/or in the RF. If the variable gain is implemented in the RF parts, it is typically placed in the LNA or in a separate gain control stage. Several methods that can be used to implement a variable gain in the LNA are introduced and compared to each other. Furthermore, several of these methods are included in the experimental circuits. The last part of this thesis concentrates on four experimental circuits, which are described in this thesis. The first two chips describe an RF front-end and a direct-conversion receiver for WCDMA applications. The whole receiver demonstrates that it is possible to implement A/D converters on the same chip as sensitive RF blocks without significantly degrading receiver performance. The other two chips describe an RF front-end for WCDMA and GSM900 applications and a direct-conversion receiver for GSM900, DCS1800, PCS1900 and WCDMA systems. These ICs demonstrate the usability of the circuit structure developed and presented in this thesis. The chip area in the last multi-mode receiver is not significantly increased compared to corresponding single-system receivers.reviewe