39 research outputs found

    Design of CMOS UWB LNA

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    A 250-ps integrated ultra-wideband timed array beamforming receiver in 0.18 um CMOS

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    This paper presents a 4-channel ultra-wideband (UWB) timed array beamforming receiver designed in a standard 0.18-um CMOS technology. The proposed timed array receiver achieves a maximum delay of 250 ps at the maximum beam steering angle of +/-42o with 10.5o (8 steps) steering resolution and 2-cm antenna spacing. Each receiver channel provides gains ranging from 3.6 to -35 dB and less than 8% delay variation for all delay settings over a 3.1-10.6-GHz frequency range, while consuming a maximum of 58 mW power from a 1.8-V supply. The average -1-dB compression point P1dB is -9.9 dBm. The proposed architecture is modeled and simulated by using Virtuoso Cadence.This work has been partially supported by the Spanish Ministerio de Ciencia, Innovacion y Universidades (MICINN)- ´ Agencia Estatal de Investigacion (AEI) and the European ´ Regional Development Funds (FEDER), by project PGC2018- 098946-B-I00.Peer ReviewedPostprint (author's final draft

    A Review of CMOS Low Noise Amplifier for UWB System

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    A number of CMOS low noise amplifier (LNA) design for ultra-wideband (UWB) application had been produced with a various topology and techniques from year 2004 to 2016. The performance of LNA such as frequency bandwidth, noise figure, input and output matching and gain depend with the choice of the topology and technique used. Among the techniques introduced are current reuse, common source, resistive feedback, common gate, Chebyshev filter, distributed amplifier, folded cascade and negative feedback. This paper presents the collection of review about design of low noise amplifier used for UWB application in term of topology circuit. Thus, the problem and limitation of the CMOS LNA for UWB application are reviewed. Furthermore, recent developments of CMOS LNAs are examined and a comparison of the performance criteria of various topologies is presented

    A general weak nonlinearity model for LNAs

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    This paper presents a general weak nonlinearity model that can be used to model, analyze and describe the distortion behavior of various low noise amplifier topologies in both narrowband and wideband applications. Represented by compact closed-form expressions our model can be easily utilized by both circuit designers and LNA design automation algorithms.\ud Simulations for three LNA topologies at different operating conditions show that the model describes IM components with an error lower than 0.1% and a one order of magnitude faster response time. The model also indicates that for narrowband IM2@w1-w2 all the nonlinear capacitances can be neglected while for narrowband IM3 the nonlinear capacitances at the drainterminal can be neglected

    High Efficiency, Good phase linearity 0.18 µm CMOS Power Amplifier for MBAN-UWB Applications

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    This paper presents the design of 3.1-10.6 GHz class AB power amplifier (PA) suitable for medical body area network (MBAN) Ultra-Wide Band (UWB) applications in TSMC 0.18 µm technology. An optimization technique to simultaneously maximize power added efficiency(PAE) and minimize group delay variation is employed. Source and Load-pull contours are used to design inter and output stage matching circuits. The post-layout simulation results indicated that the designed PA has a maximum PAE of 32 % and an output 1-dB compression of 11 dBm at 4 GHz. In addition, a small group delay variation of ± 50 ps was realized over the whole required frequency band . Moreover, the proposed PA has small signal power gain (S21) of 12.5 dB with ripple less than 1.5 dB over the frequency range between 3.1 GHz to 10.6 GHz, while consuming 36 mW

    A compact low-noise weighted distributed amplifier in CMOS

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    The noise figure (NF) of a front-end low-noise amplifier (LNA) places a lower bound on the sensitivity of a receiver. In a conventional LNA, there is a tradeoff between the intrinsic input capacitance of the input transistors and the achievable bandwidth (BW) of the amplifier. This makes it necessary to use smaller transistors at higher gate overdrive voltages to simultaneously achieve greater BW and better NF. Unfortunately, biasing the transistor in this fashion yields a power-inefficient design. Furthermore, the need for a smaller capacitance presents a challenge to electrostatic discharge (ESD) protection of the input due to its added capacitance

    HIGH PERFORMANCE CMOS WIDE-BAND RF FRONT-END WITH SUBTHRESHOLD OUT OF BAND SENSING

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    In future, the radar/satellite wireless communication devices must support multiple standards and should be designed in the form of system-on-chip (SoC) so that a significant reduction happen on cost, area, pins, and power etc. However, in such device, the design of a fully on-chip CMOS wideband receiver front-end that can process several radar/satellite signal simultaneously becomes a multifold complex problem. Further, the inherent high-power out-of-band (OB) blockers in radio spectrum will make the receiver more non-linear, even sometimes saturate the receiver. Therefore, the proper blocker rejection techniques need to be incorporated. The primary focus of this research work is the development of a CMOS high-performance low noise wideband receiver architecture with a subthreshold out of band sensing receiver. Further, the various reconfigurable mixer architectures are proposed for performance adaptability of a wideband receiver for incoming standards. Firstly, a high-performance low- noise bandwidthenhanced fully differential receiver is proposed. The receiver composed of a composite transistor pair noise canceled low noise amplifier (LNA), multi-gate-transistor (MGTR) trans-conductor amplifier, and passive switching quad followed by Tow Thomas bi-quad second order filter based tarns-impedance amplifier. An inductive degenerative technique with low-VT CMOS architecture in LNA helps to improve the bandwidth and noise figure of the receiver. The full receiver system is designed in UMC 65nm CMOS technology and measured. The packaged LNA provides a power gain 12dB (including buffer) with a 3dB bandwidth of 0.3G – 3G, noise figure of 1.8 dB having a power consumption of 18.75mW with an active area of 1.2mm*1mm. The measured receiver shows 37dB gain at 5MHz IF frequency with 1.85dB noise figure and IIP3 of +6dBm, occupies 2mm*1.2mm area with 44.5mW of power consumption. Secondly, a 3GHz-5GHz auxiliary subthreshold receiver is proposed to estimate the out of blocker power. As a redundant block in the system, the cost and power minimization of the auxiliary receiver are achieved via subthreshold circuit design techniques and implementing the design in higher technology node (180nm CMOS). The packaged auxiliary receiver gives a voltage gain of 20dB gain, the noise figure of 8.9dB noise figure, IIP3 of -10dBm and 2G-5GHz bandwidth with 3.02mW power consumption. As per the knowledge, the measured results of proposed main-high-performancereceiver and auxiliary-subthreshold-receiver are best in state of art design. Finally, the various viii reconfigurable mixers architectures are proposed to reconfigure the main-receiver performance according to the requirement of the selected communication standard. The down conversion mixers configurability are in the form of active/passive and Input (RF) and output (IF) bandwidth reconfigurability. All designs are simulated in 65nm CMOS technology. To validate the concept, the active/ passive reconfigurable mixer configuration is fabricated and measured. Measured result shows a conversion gain of 29.2 dB and 25.5 dB, noise figure of 7.7 dB and 10.2 dB, IIP3 of -11.9 dBm and 6.5 dBm in active and passive mode respectively. It consumes a power 9.24mW and 9.36mW in passive and active case with a bandwidth of 1 to 5.5 GHz and 0.5 to 5.1 GHz for active/passive case respectively

    Design of broadband inductor-less RF front-ends with high dynamic range for G.hn

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    System-on-Chip (SoC) was adopted in recent years as one of the solutions to reduce the cost of integrated systems. When the SoC solution started to be used, the final product was actually more expensive due to lower yield. The developments in integrated technology through the years allowed the integration of more components in lesser area with a better yield. Thus, SoCs became a widely used solution to reduced the cost of the final product, integrating into a single-chip the main parts of a system: analog, digital and memory. As integrated technology kept scaling down to allow a higher density of transistors and thus providing more functionality with the same die area, the analog RF parts of the SoC became a bottleneck to cost reduction as inductors occupy a large die area and do not scale down with technology. Hence, the trend moves toward the research and design of inductor-less SoCs that further reduce the cost of the final solution. Also, as the demand for home networking high-data-rates communication systems has increased over the last decade, several standards have been developed to satisfy the requirements of each application, the most popular being wireless local area networks (WLANs) based on the IEEE 802.11 standard. However, poor signal propagation across walls make WLANs unsuitable for high-speed applications such as high-definition in-home video streaming, leading to the development of wired technologies using the existing in-home infrastructure. The ITU-T G.hn recommendation (G.9960 and G.9961) unifies the most widely used wired infrastructures at home (coaxial cables, phone lines and power lines) into a single standard for high-speed data transmission of up to 1 Gb/s. The G.hn recommendation defines a unified networking over power lines, phone lines and coaxial cables with different plans for baseband and RF. The RF-coax bandplan, where this thesis is focused, uses 50 MHz and 100 MHz bandwidth channels with 256 and 512 carriers respectively. The center frequency can range from 350 MHz to 2450 MHz. The recommendation specifies a transmission power limit of 5 dBm for the 50 MHz bandplan and 8~dBm for the 100 MHz bandplan, therefore the maximum transmitted power in each carrier is the same for both bandplans. Due to the nature of an in-home wired environment, receivers that can handle both very large and very small amplitude signals are required; when transmitter and receiver are connected on the same electric outlet there is no channel attenuation and the signal-to-noise-plus-distortion ratio (SNDR) is dominated by the receiver linearity, whereas when transmitter and receiver are several rooms apart channel attenuation is high and the SNDR is dominated by the receiver noise figure. The high dynamic range specifications for these receivers require the use of configurable-gain topologies that can provide both high-linearity and low-noise for different configurations. Thus, this thesis has been aimed at researching high dynamic range broadband inductor-less topologies to be used as the RF front-end for a G.hn receiver complying with the provided specifications. A large part of the thesis has been focused on the design of the input amplifier of the front-end, which is the most critical stage as the noise figure and linearity of the input amplifier define the achievable overall specifications of the whole front-end. Three prototypes has been manufactured using a 65 nm CMOS process: two input RFPGAs and one front-end using the second RFPGA prototype.El "sistema en un chip" (SoC) fue adoptado recientemente como una de las soluciones para reducir el coste de sistemas integrados. Cuando se empezó a utilizar la solución SoC, el producto final era más caro debido al bajo rendimiento de producción. Los avances en tecnología integrada a lo largo de los años han permitido la integración de más componentes en menos área con mejoras en rendimiento. Por lo tanto, SoCs pasó a ser una solución ampliamente utilizada para reducir el coste del producto final, integrando en un único chip las principales partes de un sistema: analógica, digital y memoria. A medida que las tecnologías integradas se reducían en tamaño para permitir una mayor densisdad de transistores y proveer mayor funcionalidad con la misma área, las partes RF analógicas del SoC pasaron a ser la limitación en la reducción de costes ya que los inductores ocupan mucha área y no escalan con la tecnología. Por lo tanto, las tendencias en investigación se mueven hacia el diseño de SoCs sin inductores que todavía reducen más el coste final del producto. También, a medida que la demanda en sistemas de comunicación domésticos de alta velocidad ha crecido a lo largo de la última década, se han desarrollado varios estándares para satisfacer los requisitos de cada aplicación, siendo las redes sin hilos (WLANs) basadas en el estándar IEEE 802.11 las más populares. Sin embargo, una pobre propagación de señal a través de las paredes hacen que las WLANs sean inadecuadas para aplicaciones de alta-velocidad como transmisión de vídeo de alta definición en tiempo real, resultando en el desarrollo de tecnologías con hilos utilizando la infraestructura existente en los domicilios. La recomendación ITU-T G.hn (G.9960 and G.9961) unifica las principales infraestructuras con hilos domésticas (cables coaxiales, línias de teléfono y línias de electricidad) en un sólo estándar para la transmisión de datos hasta 1 Gb/s. La recomendación G.hn define una red unificada sobre línias de electricidad, de teléfono y coaxiales con diferentes esquemas para banda base y RF. El esquema RF-coax en el cual se basa esta tesis, usa canales con un ancho de banda de 50 MHz y 100 MHz con 256 y 512 portadoras respectivamente. La frecuencia centra puede variar desde 350 MHz hasta 2450 MHz. La recomendación especifica un límite en la potencia de transmisión de 5 dBm para el esquema de 50 MHz y 8 dBm para el esquema de 100 MHz, de tal forma que la potencia máxima por portadora es la misma en ambos esquemas. Debido a la estructura de un entorno doméstico con hilos, los receptores deben ser capaces de procesar señales con amplitud muy grande o muy pequeña; cuando transmisor y receptor están conectados en la misma toma eléctrica no hay atenuación de canal y el ratio de señal a rudio más distorsión (SNDR) está dominado por la linealidad del receptor, mientras que cuando transmisor y receptor están separados por varias habitaciones la atenuación es elevada y el SNDR está dominado por la figura de ruido del receptor. Los elevados requisitos de rango dinámico para este tipo de receptores requieren el uso de topologías de ganancia configurable que pueden proporcionar tanto alta linealidad como bajo ruido para diferentes configuraciones. Por lo tanto, esta tesis está encarada a la investigación de topologías sin inductores de banda ancha y elevado rango dinámico para ser usadas a la entrada de un receptor G.hn cumpliendo con las especificaciones proporcionadas. Una gran parte de la tesis se ha centrado en el diseño del amplificador de entrada al ser la etapa más crítica, ya que la figura de ruido y linealidad del amplificador de entrada definen lás máximas especificaciones que el sistema puede conseguir. Se han fabricado 3 prototipos con un proceso CMOS de 65 nm: 2 amplificadores y un sistema completo con amplificador y mezclador.Postprint (published version
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