208 research outputs found
Fourier Response of a Memristor: Generation of High Harmonics with Increasing Weights
We investigate the Fourier transform of the current through a memristor when
the applied-voltage frequency is smaller than the characteristic memristor
frequency, and the memristor shows hysteresis in the current-voltage plane. We
find that when the hysteresis curve is "smooth", the current Fourier transform
has weights at odd and even harmonics that decay rapidly and monotonically with
the order of the harmonic; when the hysteresis curve is "sharp", the Fourier
transform of the current is significantly broader, with non-monotonic weights
at high harmonics. We present a simple model which shows that this qualitative
change in the Fourier spectrum is solely driven by the saturation of
memristance during a voltage cycle, and not independently by various system
parameters such as applied or memristor frequencies, and the non-linear dopant
drift.Comment: 5 pages, 3 figure
Application of Memristors in Microwave Passive Circuits
The recent implementation of the fourth fundamental electric circuit element, the memristor, opened new vistas in many fields of engineering applications. In this paper, we explore several RF/microwave passive circuits that might benefit from the memristor salient characteristics. We consider a power divider, coupled resonator bandpass filters, and a low-reflection quasi-Gaussian lowpass filter with lossy elements. We utilize memristors as configurable linear resistors and we propose memristor-based bandpass filters that feature suppression of parasitic frequency pass bands and widening of the desired rejection band. The simulations are performed in the time domain, using LTspice, and the RF/microwave circuits under consideration are modeled by ideal elements available in LTspice
Memristors
This Edited Volume Memristors - Circuits and Applications of Memristor Devices is a collection of reviewed and relevant research chapters, offering a comprehensive overview of recent developments in the field of Engineering. The book comprises single chapters authored by various researchers and edited by an expert active in the physical sciences, engineering, and technology research areas. All chapters are complete in itself but united under a common research study topic. This publication aims at providing a thorough overview of the latest research efforts by international authors on physical sciences, engineering, and technology,and open new possible research paths for further novel developments
ANALIZA PRZECIWRÓWNOLEGŁEGO OBWODU MEMRYSTOROWEGO
The basic purpose of the present paper is to propose an extended investigation and computer analysis of an anti-parallel memristor circuit with two equivalent memristor elements with different initial values of the state variables using a modified Boundary Condition Memristor (BCM) Model and the finite differences method. The memristor circuit is investigated for sinusoidal supply current at different magnitudes – for soft-switching and hard-switching modes, respectively. The influence of the initial values of the state variables on the circuit’s behaviour is presented as well. The equivalent i-v and memristance-flux and the other important relationshipsof the memristor circuit are also analyzed.Podstawowym celem niniejszego artykułu jest zaproponowanie rozszerzonego badania i komputerowej analizy przeciwrównoległego układu memrystorowego z dwoma równoważnymi elementami memrystorowymi o różnych wartościach początkowych zmiennych stanu z wykorzystaniem zmodyfikowanego modelu Boundary Condition Memristor (BCM) i metody różnic skończonych. Obwód memrystorowy jest badany dla sinusoidalnego prądu zasilania o różnych wielkościach – odpowiednio dla trybów miękkiego przełączania i twardego przełączania. Przedstawiono również wpływ wartości początkowych zmiennych stanu na zachowanie obwodu. Analizowane są również równoważne charakterystyki prądowo-napięciowe zależność między memrystancją i strumieniem magnetycznym oraz inne ważne cechy obwodu memrystora
Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices
Highly accurate and predictive models of resistive switching devices are
needed to enable future memory and logic design. Widely used is the memristive
modeling approach considering resistive switches as dynamical systems. Here we
introduce three evaluation criteria for memristor models, checking for
plausibility of the I-V characteristics, the presence of a sufficiently
non-linearity of the switching kinetics, and the feasibility of predicting the
behavior of two anti-serially connected devices correctly. We analyzed two
classes of models: the first class comprises common linear memristor models and
the second class widely used non-linear memristive models. The linear memristor
models are based on Strukovs initial memristor model extended by different
window functions, while the non-linear models include Picketts physics-based
memristor model and models derived thereof. This study reveals lacking
predictivity of the first class of models, independent of the applied window
function. Only the physics-based model is able to fulfill most of the basic
evaluation criteria.Comment: 9 pages; accepted for IEEE TCAS-
Reliable SPICE Simulations of Memristors, Memcapacitors and Meminductors
Memory circuit elements, namely memristive, memcapacitive and meminductive systems, are gaining considerable attention due to their ubiquity and use in diverse areas of science and technology. Their modeling within the most widely used environment, SPICE, is thus critical to make substantial progress in the design and analysis of complex circuits. Here, we present a collection of models of different memory circuit elements and provide a methodology for their accurate and reliable modeling in the SPICE environment. We also provide codes of these models written in the most popular SPICE versions (PSpice, LTspice, HSPICE) for the benefit of the reader. We expect this to be of great value to the growing community of scientists interested in the wide range of applications of memory circuit elements
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