Applying Software Product Lines to Build Autonomic Pervasive Systems

In this Master Thesis, we have proposed a model-driven Software Product Line (SPL) for developing autonomic pervasive systems. The work focusses on reusing the Variability knowledge from the SPL design to the SPL products. This Variability knowledge enables SPL products to deal with adaptation scenarios (evolution and involution) in an autonomic way.Cetina Englada, C. (2008). Applying Software Product Lines to Build Autonomic Pervasive Systems. http://hdl.handle.net/10251/12447Archivo delegad

Photonic RF signal processors

The purpose of this thesis is to explore the emerging possibilities of processing radiofrequency (RF) or microwave signals in optical domain, which will be a key technology to implement next-generation mobile communication systems and future optical networks. Research activities include design and modelling of novel photonic architectures for processing and filtering of RF, microwave and millimeter wave signals of the above mentioned applications. Investigations especially focus on two basic functions and critical requirements in advanced RF systems, namely: • Interference mitigation and high Q tunable filters. • Arbitrary filter transfer function generation. The thesis begins with a review on several state-of-the-art architectures of in-fiber RF signal processing and related key optical technologies. The unique capabilities offered by in-fiber RF signal processors for processing ultra wide-band, high-frequency signals directly in optical domain make them attractive options for applications in optical networks and wide-band microwave signal processing. However, the principal drawbacks which have been demonstrated so far in the in-fiber RF signal processors arc their inflexible or expensive schemes to set tap weights and time delay. Laser coherence effects also limit sampling frequency and introduce additional phase-induced intensity noise

Achieving Autonomic Computing through the Use of Variability Models at Run-time

Increasingly, software needs to dynamically adapt its behavior at run-time in response to changing conditions in the supporting computing infrastructure and in the surrounding physical environment. Adaptability is emerging as a necessary underlying capability, particularly for highly dynamic systems such as context-aware or ubiquitous systems. By automating tasks such as installation, adaptation, or healing, Autonomic Computing envisions computing environments that evolve without the need for human intervention. Even though there is a fair amount of work on architectures and their theoretical design, Autonomic Computing was criticised as being a \hype topic" because very little of it has been implemented fully. Furthermore, given that the autonomic system must change states at runtime and that some of those states may emerge and are much less deterministic, there is a great challenge to provide new guidelines, techniques and tools to help autonomic system development. This thesis shows that building up on the central ideas of Model Driven Development (Models as rst-order citizens) and Software Product Lines (Variability Management) can play a signi cant role as we move towards implementing the key self-management properties associated with autonomic computing. The presented approach encompass systems that are capable of modifying their own behavior with respect to changes in their operating environment, by using variability models as if they were the policies that drive the system's autonomic recon guration at runtime. Under a set of recon guration commands, the components that make up the architecture dynamically cooperate to change the con guration of the architecture to a new con guration. This work also provides the implementation of a Model-Based Recon guration Engine (MoRE) to blend the above ideas. Given a context event, MoRE queries the variability models to determine how the system should evolve, and then it provides the mechanisms for modifying the system.Cetina Englada, C. (2010). Achieving Autonomic Computing through the Use of Variability Models at Run-time [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/7484Palanci

Virtualisation of FPGA-Resources for Concurrent User Designs Employing Partial Dynamic Reconfiguration

Reconfigurable hardware in a cloud environment is a power efficient way to increase the processing power of future data centers beyond today\'s maximum. This work enhances an existing framework to support concurrent users on a virtualized reconfigurable FPGA resource. The FPGAs are used to provide a flexible, fast and very efficient platform for the user who has access through a simple cloud based interface. A fast partial reconfiguration is achieved through the ICAP combined with a PCIe connection and a combination of custom and TCL scripts to control the tool flow. This allows for a reconfiguration of a user space on a FPGA in a few milliseconds while providing a simple single-action interface to the user

Optimising and evaluating designs for reconfigurable hardware

Growing demand for computational performance, and the rising cost for chip design and manufacturing make reconfigurable hardware increasingly attractive for digital system implementation. Reconfigurable hardware, such as field-programmable gate arrays (FPGAs), can deliver performance through parallelism while also providing flexibility to enable application builders to reconfigure them. However, reconfigurable systems, particularly those involving run-time reconfiguration, are often developed in an ad-hoc manner. Such an approach usually results in low designer productivity and can lead to inefficient designs. This thesis covers three main achievements that address this situation. The first achievement is a model that captures design parameters of reconfigurable hardware and performance parameters of a given application domain. This model supports optimisations for several design metrics such as performance, area, and power consumption. The second achievement is a technique that enhances the relocatability of bitstreams for reconfigurable devices, taking into account heterogeneous resources. This method increases the flexibility of modules represented by these bitstreams while reducing configuration storage size and design compilation time. The third achievement is a technique to characterise the power consumption of FPGAs in different activity modes. This technique includes the evaluation of standby power and dedicated low-power modes, which are crucial in meeting the requirements for battery-based mobile devices

High capacity photonic integrated switching circuits

As the demand for high-capacity data transfer keeps increasing in high performance computing and in a broader range of system area networking environments; reconfiguring the strained networks at ever faster speeds with larger volumes of traffic has become a huge challenge. Formidable bottlenecks appear at the physical layer of these switched interconnects due to its energy consumption and footprint. The energy consumption of the highly sophisticated but increasingly unwieldy electronic switching systems is growing rapidly with line rate, and their designs are already being constrained by heat and power management issues. The routing of multi-Terabit/second data using optical techniques has been targeted by leading international industrial and academic research labs. So far the work has relied largely on discrete components which are bulky and incurconsiderable networking complexity. The integration of the most promising architectures is required in a way which fully leverages the advantages of photonic technologies. Photonic integration technologies offer the promise of low power consumption and reduced footprint. In particular, photonic integrated semiconductor optical amplifier (SOA) gate-based circuits have received much attention as a potential solution. SOA gates exhibit multi-terahertz bandwidths and can be switched from a high-gain state to a high-loss state within a nanosecond using low-voltage electronics. In addition, in contrast to the electronic switching systems, their energy consumption does not rise with line rate. This dissertation will discuss, through the use of different kind of materials and integration technologies, that photonic integrated SOA-based optoelectronic switches can be scalable in either connectivity or data capacity and are poised to become a key technology for very high-speed applications. In Chapter 2, the optical switching background with the drawbacks of optical switches using electronic cores is discussed. The current optical technologies for switching are reviewed with special attention given to the SOA-based switches. Chapter 3 discusses the first demonstrations using quantum dot (QD) material to develop scalable and compact switching matrices operating in the 1.55µm telecommunication window. In Chapter 4, the capacity limitations of scalable quantum well (QW) SOA-based multistage switches is assessed through experimental studies for the first time. In Chapter 5 theoretical analysis on the dependence of data integrity as ultrahigh line-rate and number of monolithically integrated SOA-stages increases is discussed. Chapter 6 presents some designs for the next generation of large scale photonic integrated interconnects. A 16x16 switch architecture is described from its blocking properties to the new miniaturized elements proposed. Finally, Chapter 7 presents several recommendations for future work, along with some concluding remark

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu