13 research outputs found

    Techniques for the design of a low noise, high dynamic range, high gain, wideband amplifier for analogue OEIC applications

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    Various techniques for the Design of a Low Noise, High Dynamic Range, High Gain, Wideband Amplifier for Analogue OEIC Applications, such as radar receiver arrays for electronic warfare applications were developed and investigated in this work. Firstly, the available transistor technologies, semiconductor technologies and photodetector technologies and their pros and cons in light of the target application type are investigated in order to decide on the technologies best suited for this research, and justification of the chosen options are presented. Secondly, three different known amplifier topologies are discussed and their linearity, gain, bandwidth, SFDR, and other performances are compared via simulations calibrated against measured results. The results from the comparisons are analysed and the amplifier topology most suitable for this work is chosen based on these results. Thirdly, three different circuit alteration techniques for improving the linearity and SFDR of the previously chosen amplifier topology are developed, analysed and verified through simulations. It is shown that these techniques can be combined to gain further improvement in overall performance. And finally, the influence of various geometrical and doping alterations of the transistor on desired figures of merit, i.e. gain, bandwidth, linearity, etc. are investigated in detail using two-dimensional physical device simulations calibrated against measured results of an InP/InGaAs single heterojunction bipolar transistor. The device simulations were carried out using Technology-Computer-Aided-Design (TCAD) within the SILVACO software package. The results are then used to suggest techniques to improve performance at the transistor level

    Electronic and photonic integrated circuits for millimeter wave-over-fiber

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    On-Chip Integrated Functional Near Infra-Red Spectroscopy (fNIRS) Photoreceiver for Portable Brain Imaging

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    RÉSUMÉ L'imagerie cérébrale fonctionnelle utilisant la Spectroscopie Fonctionnelle Proche-Infrarouge (SFPI) propose un outil portatif et non invasif de surveillance de l'oxygénation du sang. SFPI est une technique de haute résolution temporelle non invasive, sûr, peu intrusive en temps réel et pour l'imagerie cérébrale à long terme. Il permet de détecter des signaux hémodynamiques à la fois rapides et neuronaux ou lents. Outre les avantages importants des systèmes SFPI, ils souffrent encore de quelques inconvénients, notamment d’une faible résolution spatiale, d’un bruit de niveau modérément élevé et d’une grande sensibilité au mouvement. Afin de surmonter les limites des systèmes actuellement disponibles de SFPI non-portables, dans cette thèse, nous en avons introduit une nouvelle de faible puissance, miniaturisée sur une puce photodétecteur frontal destinée à des systèmes de SFPI portables. Elle contient du silicium photodiode à avalanche (SiAPD), un amplificateur de transimpédance (TIA), et « Quench-Reset », circuits mis en oeuvre en utilisant les technologies CMOS standards pour fonctionner dans les deux modes : linéaire et Geiger. Ainsi, elle peut être appliquée pour les deux fNIRS : en onde continue (CW- SFPI) et pour des applications de comptage de photon unique. Plusieurs SiAPDs ont été mises en oeuvre dans de nouvelles structures et formes (rectangulaires, octogonales, double APDs, imbriquées, netted, quadratiques et hexadecagonal) en utilisant différentes techniques de prévention de la dégradation de bord prématurée. Les principales caractéristiques des SiAPDs sont validées et l'impact de chaque paramètre ainsi que les simulateurs de l'appareil (TCAD, COMSOL, etc) ont été étudiés sur la base de la simulation et de mesure des résultats. Proposées SiAPDs techniques d'exposition avec un gain de grande avalanche, tension faible ventilation et une grande efficacité de détection des photons dans plus de faibles taux de comptage sombres. Trois nouveaux produits à haut gain, bande passante (GBW) et à faible bruit TIA sont introduits basés sur le concept de gain distribué, d’amplificateur logarithmique et sur le rejet automatique du bruit pour être appliqué en mode de fonctionnement linéaire. Le TIA proposé offre une faible consommation, un gain de haute transimpédance, une bande passante ajustable et un très faible bruit d'entrée et de sortie. Le nouveau circuit mixte trempe-reset (MQC) et un MQC contrôlable (CMQC) frontaux offrent une faible puissance, une haute vitesse de comptage de photons avec un commandable de temps de hold-off et temps de réinitialiser. La première intégration sur puce de SiAPDs avec TIA et Photon circuit de comptage a été démontrée et montre une amélioration de l'efficacité de la photodétection, spécialement en ce qui concerne la sensibilité, la consommation d'énergie et le rapport signal sur bruit.----------ABSTRACT Optical brain imaging using functional near infra-red spectroscopy (fNIRS) offers a direct and noninvasive tool for monitoring of blood oxygenation. fNIRS is a noninvasive, safe, minimally intrusive, and high temporal-resolution technique for real-time and long-term brain imaging. It allows detecting both fast-neuronal and slow-hemodynamic signals. Besides the significant advantages of fNIRS systems, they still suffer from few drawbacks including low spatial- resolution, moderately high-level noise and high-sensitivity to movement. In order to overcome the limitations of currently available non-portable fNIRS systems, we have introduced a new low-power, miniaturized on-chip photodetector front-end intended for portable fNIRS systems. It includes silicon avalanche photodiode (SiAPD), Transimpedance amplifier (TIA), and Quench- Reset circuitry implemented using standard CMOS technologies to operate in both linear and Geiger modes. So it can be applied for both continuous-wave fNIRS (CW-fNIRS) and also single-photon counting applications. Several SiAPDs have been implemented in novel structures and shapes (Rectangular, Octagonal, Dual, Nested, Netted, Quadratic and Hexadecagonal) using different premature edge breakdown prevention techniques. The main characteristics of the SiAPDs are validated and the impact of each parameter and the device simulators (TCAD, COMSOL, etc.) have been studied based on the simulation and measurement results. Proposed techniques exhibit SiAPDs with high avalanche-gain (up to 119), low breakdown-voltage (around 12V) and high photon-detection efficiency (up to 72% in NIR region) in additional to a low dark- count rate (down to 30Hz at 1V excess bias voltage). Three new high gain-bandwidth product (GBW) and low-noise TIAs are introduced and implemented based on distributed-gain concept, logarithmic-amplification and automatic noise-rejection and have been applied in linear-mode of operation. The implemented TIAs offer a power-consumption around 0.4 mW, transimpedance gain of 169 dBΩ, and input-output current/voltage noises in fA/pV range accompanied with ability to tune the gain, bandwidth and power-consumption in a wide range. The implemented mixed quench-reset circuit (MQC) and controllable MQC (CMQC) front-ends offer a quenchtime of 10ns, a maximum power-consumption of 0.4 mW, with a controllable hold-off and resettimes. The on-chip integration of SiAPDs with TIA and photon-counting circuitries has been demonstrated showing improvement of the photodetection-efficiency, specially regarding to the sensitivity, power-consumption and signal-to-noise ratio (SNR) characteristics

    Development of an optical nor gate transistor laser integrated circuit

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    The transistor laser combines the intrinsic switching property of a bipolar transistor and the coherent light output of a laser in a single device, making it uniquely suited for electro-optical integration. Furthermore, with the addition of waveguide structures, a transistor laser integrated circuit is well suited for monolithic logic processing using on-chip optical interconnects. Although there are still many challenges to overcome both on the device level and the integration level, a transistor laser integrated circuit can be an attractive alternative to conventional electrical integrated circuits based on complementary metal-oxide-semiconductor (CMOS) technology. The subject of this work is the design, process development, and fabrication of a transistor laser integrated circuit in the form of an optical NOR gate to demonstrate optical logic processing using the transistor laser. This work begins with a brief introduction to optical logic processing and why the transistor laser is ideal for this application. Details of the development of a high-speed GaAs photodiode are given to supplement the original transistor laser process with a vertically illuminated optical receiver. The development of the transistor laser optical NOR gate is described, including the design and operating principle as well as the two rounds of fabrication. The methods used to characterize the optical NOR gate are reported, followed by a discussion of the results. Finally, the work is summarized and future improvements to the current process as well as next generation transistor laser integrated circuit concepts are proposed

    High performance photodetectors for multimode optical data links

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    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.Includes bibliographical references (p. 233-240).The majority of photodetectors presented in the literature, or available commercially, have dimensions on the order of 50 Ym or smaller, suitable for glass multimode or single mode fibre applications. The recent successful commercialisation of very large core diameter plastic optical fibre in systems based around 650 nm emitters, as well as the recent emergence of new polymer materials enabling relatively low loss at the more standard 780 nm and 850 nm wavelengths, has exposed the need for integrated photodetectors with dimensions well above 100 /m and capable of bitrates from 250 Mb/s for low-cost consumer applications to multiple Gb/s for high performance short reach interconnects. This size-performance regime has been largely ignored until now. This work examines interdigitated detector structures in multiple material systems by measurement and simulation. An optoelectronic frequency response measurement system was designed and implemented for this work, allowing measurement up to 8 GHz using 850 nm or 1550 nm sources. The full expression for frequency response of diffusion current under different illumination scenarios was derived, a topic normally omitted in the discussion of photodetectors, and applied to the analysis of device measurements.(cont.) Silicon detectors of various geometries were fabricated, with measured bandwidths at 5 V reverse bias up to 2 GHz for 200 ym diameter devices and 4 GHz for 50 and 100 ym diameter devices. The latter is the highest bandwidth reported for a silicon detector fabricated in a CMOS-compatible process and biased at a practically accessible voltage. Device performance was confirmed by simulation, and a novel structure is proposed featuring a buried junction on SOI determined by simulation to have twice as high a responsivity-bandwidth product as the best reported devices fabricated on high resistivity SOI. The silicon device structure was modified for epitaxial germanium wafers, and devices were fabricated. The germanium devices were simulated to determine the appropriate technology scaling direction and maximum device dimensions for desired performance specifications.by Wojciech Piotr Giziewicz.Ph.D

    Monolithic integrated reflective transceiver in indium phosphide

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    The work presented in this thesis is about an InP based monolithic integrated reflective transceiver meant for use in future fiber access networks at the user site. The motivation for this research results from the users’ demands for ever-increasing bandwidth at low cost of operation, administration and maintenance. We investigated solutions to these challenges with a network concept using a dynamically reconfigurable optical network topology with a wavelength router and a colorless optical network unit. This work focuses on developing the optical part of the optical network unit, a reflective transceiver. This reflective transceiver consists of three basic components: a tunable wavelength duplexer, a photodetector and a reflective modulator. The tunable wavelength duplexer separates two wavelengths, one for the downstream and one for the upstream signals, and guides them to the photodetector and the reflective modulator. The photodetector detects the downstream data. The reflective modulator modulates the light carrier with the upstream data and reflects it back to the network. The integrated transceiver was realized bymonolithically integrating these components on a common active-passive butt-joint layer stack based on InP technology. This approach not only offers high bandwidth for both downstream data and upstream data, but also lowers the cost of the device and the network operation because of the colorless operation at the user site. The main results obtained within this work are summarized as follows: an efficient and polarization insensitive tunable wavelength duplexer was realized; a new method to fabricate a reflective SOA has been proposed and demonstrated; a high performance waveguide photodetector based on SOA layer stack was successfully fabricated; a low cost photoreceiverwhich includes an InP photodetector and a SiGe amplifier was demonstrated; aworking monolithic integrated reflective transceiver based on InP was successfully realized and demonstrated; two monolithic integrated transceivers aiming for higher bandwidth have been designed and fabricated. In addition, a novel MMI reflector has been proposed and realized with high reflectivity. This work was funded by DutchMinistry of Economic Affairs through the Freeband Project Broadband Photonics Access, the Smartmix projectMemphis and the NRC Photonics
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