54 research outputs found

    The BLIXER, a Wideband Balun-LNA-I/Q-Mixer Topology

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    This paper proposes to merge an I/Q current-commutating mixer with a noise-canceling balun-LNA. To realize a high bandwidth, the real part of the impedance of all RF nodes is kept low, and the voltage gain is not created at RF but in baseband where capacitive loading is no problem. Thus a high RF bandwidth is achieved without using inductors for bandwidth extension. By using an I/Q mixer with 25% duty-cycle LO waveform the output IF currents have also 25% duty-cycle, causing 2 times smaller DC-voltage drop after IF filtering. This allows for a 2 times increase in the impedance level of the IF filter, rendering more voltage gain for the same supply headroom. The implemented balun-LNA-I/Q-mixer topology achieves > 18 dB conversion gain, a flat noise figure < 5.5 dB from 500 MHz to 7 GHz, IIP2 = +20 dBm and IIP3 = -3 dBm. The core circuit consumes only 16 mW from a 1.2 V supply voltage and occupies less than 0.01 mm2 in 65 nm CMOS

    Digitally-Enhanced Software-Defined Radio Receiver Robust to Out-of-Band Interference

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    A software-defined radio (SDR) receiver with improved robustness to out-of-band interference (OBI) is presented. Two main challenges are identified for an OBI-robust SDR receiver: out-of-band nonlinearity and harmonic mixing. Voltage gain at RF is avoided, and instead realized at baseband in combination with low-pass filtering to mitigate blockers and improve out-of-band IIP3. Two alternative “iterative” harmonic-rejection (HR) techniques are presented to achieve high HR robust to mismatch: a) an analog two-stage polyphase HR concept, which enhances the HR to more than 60 dB; b) a digital adaptive interference cancelling (AIC) technique, which can suppress one dominating harmonic by at least 80 dB. An accurate multiphase clock generator is presented for a mismatch-robust HR. A proof-of-concept receiver is implemented in 65 nm CMOS. Measurements show 34 dB gain, 4 dB NF, and 3.5 dBm in-band IIP3 while the out-of-band IIP3 is + 16 dBm without fine tuning. The measured RF bandwidth is up to 6 GHz and the 8-phase LO works up to 0.9 GHz (master clock up to 7.2 GHz). At 0.8 GHz LO, the analog two-stage polyphase HR achieves a second to sixth order HR > dB over 40 chips, while the digital AIC technique achieves HR > 80 dB for the dominating harmonic. The total power consumption is 50 mA from a 1.2 V supply

    Passive Mixer-based UWB Receiver with Low Loss, High Linearity and Noise-cancelling for Medical Applications

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    A double balanced passive mixer-based receiver operating in the 3-5 GHz UWB for medical applications is described in this paper. The receiver front-end circuit is composed of an inductorless low noise amplifier (LNA) followed by a fully differential voltage-driven double-balanced passive mixer. A duty cycle of 25% was chosen to eliminate overlap between LO signals, thereby improving receiver linearity. The LNA realizes a gain of 25.3 dB and a noise figure of 2.9 dB. The proposed receiver achieves an IIP3 of 3.14 dBm, an IIP2 of 17.5 dBm and an input return loss (S11) below -12.5dB. Designed in 0.18μm CMOS technology, the proposed mixer consumes 0.72pW from a 1.8V power supply. The designed receiver demonstrated a good ports isolation performance with LO_IF isolation of 60dB and RF_IF isolation of 78dB

    Flexible Receivers in CMOS for Wireless Communication

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    Consumers are pushing for higher data rates to support more services that are introduced in mobile applications. As an example, a few years ago video-on-demand was only accessed through landlines, but today wireless devices are frequently used to stream video. To support this, more flexible network solutions have merged in 4G, introducing new technical problems to the mobile terminal. New techniques are thus needed, and this dissertation explores five different ideas for receiver front-ends, that are cost-efficient and flexible both in performance and operating frequency. All ideas have been implemented in chips fabricated in 65 nm CMOS technology and verified by measurements. Paper I explores a voltage-mode receiver front-end where sub-threshold positive feedback transistors are introduced to increase the linearity in combination with a bootstrapped passive mixer. Paper II builds on the idea of 8-phase harmonic rejection, but simplifies it to a 6-phase solution that can reject noise and interferers at the 3rd order harmonic of the local oscillator frequency. This provides a good trade-off between the traditional quadrature mixer and the 8- phase harmonic rejection mixer. Furthermore, a very compact inductor-less low noise amplifier is introduced. Paper III investigates the use of global negative feedback in a receiver front-end, and also introduces an auxiliary path that can cancel noise from the main path. In paper IV, another global feedback based receiver front-end is designed, but with positive feedback instead of negative. By introducing global positive feedback, the resistance of the transistors in a passive mixer-first receiver front-end can be reduced to achieve a lower noise figure, while still maintaining input matching. Finally, paper V introduces a full receiver chain with a single-ended to differential LNA, current-mode downconversion mixers, and a baseband circuity that merges the functionalities of the transimpedance amplifier, channel-select filter, and analog-to-digital converter into one single power-efficient block

    HIGH LINEARITY UNIVERSAL LNA DESIGNS FOR NEXT GENERATION WIRELESS APPLICATIONS

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    Design of the next generation (4G) systems is one of the most active and important area of research and development in wireless communications. The 2G and 3G technologies will still co-exist with the 4G for a certain period of time. Other applications such as wireless LAN (Local Area Network) and RFID are also widely used. As a result, there emerges a trend towards integrating multiple wireless functionalities into a single mobile device. Low noise amplifier (LNA), the most critical component of the receiver front-end, determines the sensitivity and noise figure of the receiver and is indispensable for the complete system. To satisfy the need for higher performance and diversity of wireless communication systems, three LNAs with different structures and techniques are proposed in the thesis based on the 4G applications. The first LNA is designed and optimized specifically for LTE applications, which could be easily added to the existing system to support different standards. In this cascode LNA, the nonlinearity coming from the common source (CS) and common gate (CG) stages are analyzed in detail, and a novel linear structure is proposed to enhance the linearity in a relatively wide bandwidth. The LNA has a bandwidth of 900MHz with the linearity of greater than 7.5dBm at the central frequency of 1.2GHz. Testing results show that the proposed structure effectively increases and maintains linearity of the LNA in a wide bandwidth. However, a broadband LNA that covers multiple frequency ranges appears more attractive due to system simplicity and low cost. The second design, a wideband LNA, is proposed to cover multiple wireless standards, such as LTE, RFID, GSM, and CDMA. A novel input-matching network is proposed to relax the tradeoff among noise figure and bandwidth. A high gain (>10dB) in a wide frequency range (1-3GHz) and a minimum NF of 2.5dB are achieved. The LNA consumes only 7mW on a 1.2V supply. The first and second LNAs are designed mainly for the LTE standard because it is the most widely used standard in the 4G communication systems. However, WiMAX, another 4G standard, is also being widely used in many applications. The third design targets on covering both the LTE and the WiMAX. An improved noise cancelling technique with gain enhancing structure is proposed in this design and the bandwidth is enlarged to 8GHz. In this frequency range, a maximum power gain of 14.5dB and a NF of 2.6-4.3dB are achieved. The core area of this LNA is 0.46x0.67mm2 and it consumes 17mW from a 1.2V supply. The three designs in the thesis work are proposed for the multi-standard applications based on the realization of the 4G technologies. The performance tradeoff among noise, linearity, and broadband impedance matching are explored and three new techniques are proposed for the tradeoff relaxation. The measurement results indicate the techniques effectively extend the bandwidth and suppress the increase of the NF and nonlinearity at high frequencies. The three proposed structures can be easily applied to the wideband and multi-standard LNA design

    A MOSFET-only wideband LNA exploiting thermal noise canceling and gain optimization

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    Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para a obtenção do grau de Mestre em Engenharia Electrotécnica e de ComputadoresIn this thesis a MOSFET-only implementation of a balun LNA is presended. This LNA is based on the combination of a common-gate and a common-source stage with canceling of the noise of the common-gate stage. In this circuit, resistors are replaced by transistors, to reduce area and cost, and minimize the e ect of process and supply variations and mismatches. In addition we obtain a higher gain for the same voltage drop. Thus, the LNA gain is optimized, and the noise gure(NF) is reduced. We derive equations for the gain, input matching, and NF. The performance of this new topology is compared with that of a conventional LNA with resistors. Simulation results with a 130 nm CMOS technology show that we obtain a balun LNA with a peak 20.2 dB gain (about 2 dB improvement), and a spot NF lower than 2.4 dB. The total power consumption is only 4.8 mW for a bandwidth wide than 5 GHz

    CMOS radio frequency circuits for short-range direct-conversion receivers

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    The research described in this thesis is focused on the design and implementation of radio frequency (RF) circuits for direct-conversion receivers. The main interest is in RF front-end circuits, which contain low-noise amplifiers, downconversion mixers, and quadrature local oscillator signal generation circuits. Three RF front-end circuits were fabricated in a short-channel CMOS process and experimental results are presented. A low-noise amplifier (LNA) is typically the first amplifying block in the receiver. A large number of LNAs have been reported in the literature. In this thesis, wideband LNA structures are of particular interest. The most common and relevant LNA topologies are analyzed in detail in the frequency domain and theoretical limitations are found. New LNA structures are presented and a comparison to the ones found in the literature is made. In this work, LNAs are implemented with downconversion mixers as RF front-ends. The designed mixers are based on the commonly used Gilbert cell. Different mixer implementation alternatives are presented and the design of the interface between the LNA and the downconversion mixer is discussed. In this work, the quadrature local oscillator signal is generated either by using frequency dividers or polyphase filters (PPF). Different possibilities for implementing frequency dividers are briefly described. Polyphase filters were already introduced by the 1970s and integrated circuit (IC) realizations to generate quadrature signals have been published since the mid-1990s. Although several publications where the performance of the PPFs has been studied either by theoretical calculations or simulations can be found in the literature, none of them covers all the relevant design parameters. In this thesis, the theory behind the PPFs is developed such that all the relevant design parameters needed in the practical circuit design have been calculated and presented with closed-form equations whenever possible. Although the main focus was on twoand three-stage PPFs, which are the most common ones encountered in practical ICs, the presented calculation methods can be extended to analyze the performance of multistage PPFs as well. The main application targets of the circuits presented in this thesis are the short-range wireless sensor system and ultrawideband (UWB). Sensors are capable of monitoring temperature, pressure, humidity, or acceleration, for example. The amount of transferred data is typically small and therefore a modest bit rate, less than 1 Mbps, is adequate. The sensor system applied in this thesis operates at 2.4-GHz ISM band (Industrial, Scientific, and Medical). Since the sensors must be able to operate independently for several years, extremely low power consumption is required. In sensor radios, the receiver current consumption is dominated by the blocks and elements operating at the RF. Therefore, the target was to develop circuits that can offer satisfactory performance with a current consumption level that is small compared to other receivers targeted for common cellular systems. On the other hand, there is a growing need for applications that can offer an extremely high data rate. UWB is one example of such a system. At the moment, it can offer data rates of up to 480 Mbps. There is a frequency spectrum allocated for UWB systems between 3.1 and 10.6 GHz. The UWB band is further divided into several narrower band groups (BG), each occupying a bandwidth of approximately 1.6 GHz. In this work, a direct-conversion RF front-end is designed for a dual-band UWB receiver, which operates in band groups BG1 and BG3, i.e. at 3.1 – 4.8 GHz and 6.3 – 7.9 GHz frequency areas, respectively. Clearly, an extremely wide bandwidth combined with a high operational frequency poses challenges for circuit design. The operational bandwidths and the interfaces between the circuit blocks need to be optimized to cover the wanted frequency areas. In addition, the wideband functionality should be achieved without using a number of on-chip inductors in order to minimize the die area, and yet the power consumption should be kept as small as possible. The characteristics of the two main target applications are quite different from each other with regard to power consumption, bandwidth, and operational frequency requirements. A common factor for both is their short, i.e. less than 10 meters, range. Although the circuits presented in this thesis are targeted on the two main applications mentioned above, they can be utilized in other kind of wireless communication systems as well. The performance of three experimental circuits was verified with measurements and the results are presented in this work. Two of them have been a part of a whole receiver including baseband amplifiers and filters and analog-to-digital converters. Experimental circuits were fabricated in a 0.13-µm CMOS process. In addition, this thesis includes design examples where new circuit ideas and implementation possibilities are introduced by using 0.13-µm and 65-nm CMOS processes. Furthermore, part of the theory presented in this thesis is validated with design examples in which actual IC component models are used.Tässä väitöskirjassa esitetty tutkimus keskittyy suoramuunnosvastaanottimen radiotaajuudella (radio frequency, RF) toimivien piirien suunnitteluun ja toteuttamiseen. Työ keskittyy vähäkohinaiseen vahvistimeen (low-noise amplifier, LNA), alassekoittajaan ja kvadratuurisen paikallisoskillaattorisignaalin tuottavaan piiriin. Työssä toteutettiin kolme RF-etupäätä erittäin kapean viivanleveyden CMOS-prosessilla, ja niiden kokeelliset tulokset esitetään. Vähäkohinainen vahvistin on yleensä ensimmäinen vahvistava lohko vastaanottimessa. Useita erilaisia vähäkohinaisia vahvistimia on esitetty kirjallisuudessa. Tämän työn kohteena ovat eritoten laajakaistaiset LNA-rakenteet. Tässä työssä analysoidaan taajuustasossa yleisimmät ja oleellisimmat LNA-topologiat. Lisäksi uusia LNA-rakenteita on esitetty tässä työssä ja niitä on verrattu muihin kirjallisuudessa esitettyihin piireihin. Tässä työssä LNA:t on toteutettu yhdessä alassekoittimen kanssa muodostaen RF-etupään. Työssä suunnitellut alassekoittimet perustuvat yleisesti käytettyyn Gilbertin soluun. Erilaisia sekoittajan suunnitteluvaihtoehtoja ja LNA:n ja alassekoittimen välisen rajapinnan toteutustapoja on esitetty. Tässä työssä kvadratuurinen paikallisoskillaattorisignaali on muodostettu joko käyttämällä taajuusjakajia tai monivaihesuodattimia. Erilaisia taajuusjakajia ja niiden toteutustapoja käsitellään yleisellä tasolla. Monivaihesuodatinta, joka on alunperin kehitetty jo 1970-luvulla, on käytetty integroiduissa piireissä kvadratuurisignaalin tuottamiseen 1990-luvun puolivälistä lähtien. Kirjallisuudesta löytyy lukuisia artikkeleita, joissa monivaihesuodattimen toimintaa on käsitelty teoreettisesti laskien ja simuloinnein. Kuitenkaan kaikkia sen suunnitteluparametreja ei tähän mennessä ole käsitelty. Tässä työssä monivaihesuodattimen teoriaa on kehitetty edelleen siten, että käytännön piirisuunnittelussa tarvittavat oleelliset parametrit on analysoitu ja suunnitteluyhtälöt on esitetty suljetussa muodossa aina kuin mahdollista. Vaikka työssä on keskitytty yleisimpiin eli kaksi- ja kolmiasteisiin monivaihesuodattimiin, on työssä esitetty menetelmät, joilla laskentaa voidaan jatkaa aina useampiasteisiin suodattimiin asti. Työssä esiteltyjen piirien pääkohteina ovat lyhyen kantaman sensoriradio ja erittäin laajakaistainen järjestelmä (ultrawideband, UWB). Sensoreilla voidaan tarkkailla esimerkiksi ympäristön lämpötilaa, kosteutta, painetta tai kiihtyvyyttä. Siirrettävän tiedon määrä on tyypillisesti vähäistä, jolloin pieni tiedonsiirtonopeus, alle 1 megabitti sekunnissa, on välttävä. Tämän työn kohteena oleva sensoriradiojärjestelmä toimii kapealla kaistalla 2,4 gigahertsin ISM-taajuusalueella (Industrial, Scientific, and Medical). Koska sensorien tavoitteena on toimia itsenäisesti ilman pariston vaihtoa useita vuosia, täytyy niiden kuluttaman virran olla erittäin vähäistä. Sensoriradiossa vastaanottimen tehonkulutuksen kannalta määräävässä asemassa ovat radiotaajuudella toimivat piirit. Tavoitteena oli tutkia ja kehittää piirirakenteita, joilla päästään tyydyttävään suorituskykyyn tehonkulutuksella, joka on vähäinen verrattuna muiden tavallisten langattomien tiedonsiirtojärjestelmien radiovastaanottimiin. Toisaalta viime aikoina on kasvanut tarvetta myös järjestelmille, jotka kykenevät tarjoamaan erittäin korkean tiedonsiirtonopeuden. UWB on esimerkki tällaisesta järjestelmästä. Tällä hetkellä se tarjoaa tiedonsiirtonopeuksia aina 480 megabittiin sekunnissa. UWB:lle on varattu taajuusalueita 3,1 ja 10,6 gigahertsin taajuuksien välillä. Kyseinen kaista on edelleen jaettu pienempiin taajuusryhmiin (band group, BG), joiden kaistanleveys on noin 1,6 gigahertsiä. Tässä työssä on toteutettu RF-etupää radiovastaanottimeen, joka pystyy toimimaan BG1:llä ja BG3:lla eli taajuusalueilla 3,1 - 4,7 GHz ja 6,3 - 7,9 GHz. Erittäin suuri kaistanleveys yhdistettynä korkeaan toimintataajuuteen tekee radiotaajuuspiirien suunnittelusta haasteellista. Piirirakenteiden toimintakaistat ja piirien väliset rajapinnat tulee optimoida riittävän laajoiksi käyttämättä kuitenkaan liian montaa piille integroitua kelaa piirin pinta-alan minimoimiseksi, ja lisäksi piirit tulisi toteuttaa mahdollisimman alhaisella tehonkulutuksella. Työssä esiteltyjen piirien kaksi pääkohdetta ovat hyvin erityyppisiä, mitä tulee tehonkulutus-, kaistanleveys- ja toimintataajuusvaatimuksiin. Yhteistä molemmille on lyhyt, alle 10 metrin kantama. Vaikka tässä työssä esitellyt piirit onkin kohdennettu kahteen pääsovelluskohteeseen, voidaan esitettyjä piirejä käyttää myös muiden tiedonsiirtojärjestelmien piirien suunnitteluun. Tässä työssä esitetään mittaustuloksineen yhteensä kolme kokeellista piiriä yllämainittuihin järjestelmiin. Kaksi ensimmäistä kokeellista piiriä muodostaa kokonaisen radiovastaanottimen yhdessä analogisten kantataajuusosien ja analogia-digitaali-muuntimien kanssa. Esitetyt kokeelliset piirit on toteutettu käyttäen 0,13 µm:n viivanleveyden CMOS-tekniikkaa. Näiden lisäksi työ pitää sisällään piirisuunnitteluesimerkkejä, joissa esitetään ideoita ja mahdollisuuksia käyttäen 0,13 µm:n ja 65 nm:n viivanleveyden omaavia CMOS-tekniikoita. Lisäksi piirisuunnitteluesimerkein havainnollistetaan työssä esitetyn teorian paikkansapitävyyttä käyttämällä oikeita komponenttimalleja.reviewe

    High Performance LNAs and Mixers for Direct Conversion Receivers in BiCMOS and CMOS Technologies

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    The trend in cellular chipset design today is to incorporate support for a larger number of frequency bands for each new chipset generation. If the chipset also supports receiver diversity two low noise amplifiers (LNAs) are required for each frequency band. This is however associated with an increase of off-chip components, i.e. matching components for the LNA inputs, as well as complex routing of the RF input signals. If balanced LNAs are implemented the routing complexity is further increased. The first presented work in this thesis is a novel multiband low noise single ended LNA and mixer architecture. The mixer has a novel feedback loop suppressing both second order distortion as well as DC-offset. The performance, verified by Monte Carlo simulations, is sufficient for a WCDMA application. The second presented work is a single ended multiband LNA with programmable integrated matching. The LNA is connected to an on-chip tunable balun generating differential RF signals for a differential mixer. The combination of the narrow band input matching and narrow band balun of the presented LNA is beneficial for suppressing third harmonic downconversion of a WLAN interferer. The single ended architecture has great advantages regarding PCB routing of the RF input signals but is on the other hand more sensitive to common mode interferers, e.g. ground, supply and substrate noise. An analysis of direct conversion receiver requirements is presented together with an overview of different LNA and mixer architectures in both BiCMOS and CMOS technology

    Microwave CMOS VCOs and Front-Ends - using integrated passives on-chip and on-carrier

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    The increasing demand for high data rates in wireless communication systems is increasing the requirements on the transceiver front-ends, as they are pushed to utilize more and wider bands at higher frequencies. The work in this thesis is focused on receiver front-ends composed of Low Noise Amplifiers (LNAs), Mixers, and Voltage Controlled Oscillators (VCOs) operating at microwave frequencies. Traditionally, microwave electronics has used exclusive and more expensive semiconductor technologies (III-V materials). However, the rapid development of consumer electronics (e.g. video game consoles) the last decade has pushed the silicon CMOS IC technology towards even smaller feature sizes. This has resulted in high speed transistors (high fT and fmax) with low noise figures. However, as the breakdown voltages have decreased, a lower supply voltage must be used, which has had a negative impact on linearity and dynamic range. Nonetheless, todays downscaled CMOS technology is a feasible alternative for many microwave and even millimeter wave applications. The low quality factor (Q) of passive components on-chip usually limits the high frequency performance. For inductors realized in a standard CMOS process the substrate coupling results in a degraded Q. The quality factor can, however, be improved by moving the passive components off-chip and integrating them on a low loss carrier. This thesis therefore features microwave front-end and VCO designs in CMOS, where some designs have been flip-chip mounted on carriers featuring high Q inductors and low loss baluns. The thesis starts with an introduction to wireless communication, receiver architectures, front-end receiver blocks, and low loss carrier technology, followed by the included papers. The six included papers show the capability of CMOS and carrier technology at microwave frequencies: Papers II, III, and VI demonstrate fully integrated CMOS circuit designs. An LC-VCO using an accumulation mode varactor is presented in Paper II, a QVCO using 4-bit switched tuning is shown in Paper III, and a quadrature receiver front-end (including QVCO) is demonstrated in paper VI. Papers I and IV demonstrate receiver front-ends using low loss baluns on carrier for the LO and RF signals. Paper IV also includes a front-end using single-ended RF input which is converted to differential form in a novel merged LNA and balun. A VCO demonstrating the benefits of a high Q inductor on carrier is presented in Paper V
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