Frequency Multipliers in SiGe BiCMOS for Local Oscillator Generation in D-band Wireless Transceivers

Communications at millimeter-wave (mm-Wave) have drawn a lot of attention in recent years due to the wide available bandwidth which translates directly to higher data transmission capacity. Generation of the transceivers local oscillation (LO) is critical because many contrasting requirements, i.e. tuning range (TR), phase noise (PN), output power, and level of spurious tones, affect the system performance. Differently from what is commonly pursued at Radio Frequency, LO generation with a PLL embedding a VCO at the desired output frequency is not viable at mm-wave. A more promising approach consists of a PLL in the 10-20GHz range, where silicon VCOs feature the best figure of merit, followed by a frequency multiplier. In this thesis, a frequency multiplication chain is investigated to up-convert an LO signal from X-band to D-band by a multiplication factor of 12. The multiplication is done in steps of 3, 2, and 2. A sextupler chip comprises the tripler and the first doubler and the last doubler stage which upconverts the LO signal from E- to D-band is realized in a separate chip, all in a 55nm SiGe BiCMOS technology. The frequency tripler circuit is based on a novel circuit topology which yields a remarkable improvement on the suppression of the driving signal frequency at the output, compared to conventional designs exploiting transistors in class-C. The active core of the circuit approximates the transfer characteristic of a third-order polynomial that ideally produces only a third-harmonic of the input signal. Implemented in a separate break-out chip and consuming 23mW of DC power, the tripler demonstrates ~40dB suppression of the input signal and its 5th harmonic over 16% fractional bandwidth and robustness to power variation of the driving signal over a 15dB range. Including the E-band doubler, the sextupler chip achieves a peak output power of 1.7dBm at 74.4GHz and remains within 2dB variation from 70GHz to 82GHz, corresponding to 16% fractional BW. In this frequency range, the leakages of all harmonics are suppressed by more than 40dBc. The design of the D-band doubler was aimed at delivering high output power with high efficiency and high conversion gain. Toward this end, the efficiency of a push-push pair was improved by a stacked Colpitts oscillator to boost the power conversion gain by 10dB. Moreover, the common-collector configuration keeps separate the oscillator tank from the load, allowing independent optimization of the harmonic conversion efficiency and the load impedance for maximum power delivery. The measured performance of the test chip demonstrated Pout up to 8dBm at 130GHz with 13dB conversion gain and 6.3% Power Added Efficiency

High Performance Local Oscillator Design for Next Generation Wireless Communication

Local Oscillator (LO) is an essential building block in modern wireless radios. In modern wireless radios, LO often serves as a reference of the carrier signal to modulate or demod- ulate the outgoing or incoming data. The LO signal should be a clean and stable source, such that the frequency or timing information of the carrier reference can be well-defined. However, as radio architecture evolves, the importance of LO path design has become much more important than before. Of late, many radio architecture innovations have exploited sophisticated LO generation schemes to meet the ever-increasing demands of wireless radio performances. The focus of this thesis is to address challenges in the LO path design for next-generation high performance wireless radios. These challenges include (1) Congested spectrum at low radio frequency (RF) below 5GHz (2) Continuing miniaturization of integrated wireless radio, and (3) Fiber-fast (>10Gb/s) mm-wave wireless communication. The thesis begins with a brief introduction of the aforementioned challenges followed by a discussion of the opportunities projected to overcome these challenges. To address the challenge of congested spectrum at frequency below 5GHz, novel ra- dio architectures such as cognitive radio, software-defined radio, and full-duplex radio have drawn significant research interest. Cognitive radio is a radio architecture that opportunisti- cally utilize the unused spectrum in an environment to maximize spectrum usage efficiency. Energy-efficient spectrum sensing is the key to implementing cognitive radio. To enable energy-efficient spectrum sensing, a fast-hopping frequency synthesizer is an essential build- ing block to swiftly sweep the carrier frequency of the radio across the available spectrum. Chapter 2 of this thesis further highlights the challenges and trade-offs of the current LO gen- eration scheme for possible use in sweeping LO-based spectrum analysis. It follows by intro- duction of the proposed fast-hopping LO architecture, its implementation and measurement results of the validated prototype. Chapter 3 proposes an embedded phase-shifting LO-path design for wideband RF self-interference cancellation for full-duplex radio. It demonstrates a synergistic design between the LO path and signal to perform self-interference cancellation. To address the challenge of continuing miniaturization of integrated wireless radio, ring oscillator-based frequency synthesizer is an attractive candidate due to its compactness. Chapter 4 discussed the difficulty associated with implementing a Phase-Locked Loop (PLL) with ultra-small form-factor. It further proposes the concept sub-sampling PLL with time- based loop filter to address these challenges. A 65nm CMOS prototype and its measurement result are presented for validation of the concept. In shifting from RF to mm-wave frequencies, the performance of wireless communication links is boosted by significant bandwidth and data-rate expansion. However, the demand for data-rate improvement is out-pacing the innovation of radio architectures. A >10Gb/s mm-wave wireless communication at 60GHz is required by emerging applications such as virtual-reality (VR) headsets, inter-rack data transmission at data center, and Ultra-High- Definition (UHD) TV home entertainment systems. Channel-bonding is considered to be a promising technique for achieving >10Gb/s wireless communication at 60GHz. Chapter 5 discusses the fundamental radio implementation challenges associated with channel-bonding for 60GHz wireless communication and the pros and cons of prior arts that attempted to address these challenges. It is followed by a discussion of the proposed 60GHz channel- bonding receiver, which utilizes only a single PLL and enables both contiguous and non- contiguous channel-bonding schemes. Finally, Chapter 6 presents the conclusion of this thesis

Ultra high data rate CMOS FEs

The availability of numerous mm-wave frequency bands for wireless communication has motived the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performaning measurements using on-wafer probing at 60GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitiv to the effective length and bending of the interfaces. This paper presents different 60GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, A Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60GHZ integrated components and systems in the main stream CMOS technology

Ultra high data rate CMOS front ends

The availability of numerous mm-wave frequency bands for wireless communication has motivated the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performing measurements using on-wafer probing at 60 GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitive to the effective length and bending of the interfaces. This paper presents different 60 GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, a Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60 GHZ integrated components and systems in the main stream CMOS technology

CMOS Signal Synthesizers for Emerging RF-to-Optical Applications

The need for clean and powerful signal generation is ubiquitous, with applications spanning the spectrum from RF to mm-Wave, to into and beyond the terahertz-gap. RF applications including mobile telephony and microprocessors have effectively harnessed mixed-signal integration in CMOS to realize robust on-chip signal sources calibrated against adverse ambient conditions. Combined with low cost and high yield, the CMOS component of hand-held devices costs a few cents per part per million parts. This low cost, and integrated digital processing, make CMOS an attractive option for applications like high-resolution imaging and ranging, and the emerging 5-G communication space. RADAR techniques when expanded to optical frequencies can enable micrometers of resolution for 3D imaging. These applications, however, impose upto 100x more exacting specifications on power and spectral purity at much higher frequencies than conventional RF synthesizers. This generation of applications will present unconventional challenges for transistor technologies - whether it is to squeeze performance in the conventionally used spectrum, already wrung dry, or signal generation and system design in the relatively emptier mm-Wave to sub-mmWave spectrum, much of the latter falling in the ``Terahertz Gap". Indeed, transistor scaling and innovative device physics leading to new transistor topologies have yielded higher cut-off frequencies in CMOS, though still lagging well behind SiGe and III-V semiconductors. To avoid multimodule solutions with functionality partitioned across different technologies, CMOS must be pushed out of its comfort zone, and technology scaling has to have accompanying breakthroughs in design approaches not only at the system but also at the block level. In this thesis, while not targeting a specific application, we seek to formulate the obstacles in synthesizing high frequency, high power and low noise signals in CMOS and construct a coherent design methodology to address them. Based on this, three novel prototypes to overcome the limiting factors in each case are presented. The first half of this thesis deals with high frequency signal synthesis and power generation in CMOS. Outside the range of frequencies where the transistor has gain, frequency generation necessitates harmonic extraction either as harmonic oscillators or as frequency multipliers. We augment the traditional maximum oscillation frequency metric (fmax), which only accounts for transistor losses, with passive component loss to derive an effective fmax metric. We then present a methodology for building oscillators at this fmax, the Maximum Gain Ring Oscillator. Next, we explore generating large signals beyond fmax through harmonic extraction in multipliers. Applying concepts of waveform shaping, we demonstrate a Power Mixer that engineers transistor nonlinearity by manipulating the amplitudes and relative phase shifts of different device nodes to maximize performance at a specific harmonic beyond device cut-off. The second half proposes a new architecture for an ultra-low noise phase-locked loop (PLL), the Reference-Sampling PLL. In conventional PLLs, a noisy buffer converts the slow, low-noise sine-wave reference signal to a jittery square-wave clock against which the phase of a noisy voltage-controlled oscillator (VCO) is corrected. We eliminate this reference buffer, and measure phase error by sampling the reference sine-wave with the 50x faster VCO waveform already available on chip, and selecting the relevant sample with voltage proportional to phase error. By avoiding the N-squared multiplication of the high-power reference buffer noise, and directly using voltage-mode phase error to control the VCO, we eliminate several noisy components in the controlling loop for ultra-low integrated jitter for a given power consumption. Further, isolation of the VCO tank from any varying load, unlike other contemporary divider-less PLL architectures, results in an architecture with record performance in the low-noise and low-spur space. We conclude with work that brings together concepts developed for clean, high-power signal generation towards a hybrid CMOS-Optical approach to Frequency-Modulated Continuous-Wave (FMCW) Light-Detection-And-Ranging (LIDAR). Cost-effective tunable lasers are temperature-sensitive and have nonlinear tuning profiles, rendering precise frequency modulations or 'chirps' untenable. Locking them to an electronic reference through an electro-optic PLL, and electronically calibrating the control signal for nonlinearity and ambient sensitivity, can make such chirps possible. Approaches that build on the body of advances in electrical PLLs to control the performance, and ease the specification on the design of optical systems are proposed. Eventually, we seek to leverage the twin advantages of silicon-intensive integration and low-cost high-yield towards developing a single-chip solution that uses on-chip signal processing and phased arrays to generate precise and robust chirps for an electronically-steerable fine LIDAR beam

Self-Calibrated, Low-Jitter and Low-Reference-Spur Injection-Locked Clock Multipliers

Department of Electrical EngineeringThis dissertation focuses primarily on the design of calibrators for the injection-locked clock multiplier (ILCM). ILCMs have advantage to achieve an excellent jitter performance at low cost, in terms of area and power consumption. The wide loop bandwidth (BW) of the injection technique could reject the noise of voltage-controlled oscillator (VCO), making it thus suitable for the rejection of poor noise of a ring-VCO and a high frequency LC-VCO. However, it is difficult to use without calibrators because of its sensitiveness in process-voltage-temperature (PVT) variations. In Chapter 2, conventional frequency calibrators are introduced and discussed. This dissertation introduces two types of calibrators for low-power high-frequency LC-VCO-based ILFMs in Chapter 3 and Chapter 4 and high-performance ring-VCO-based ILCM in Chapter 5. First, Chapter 3 presents a low power and compact area LC-tank-based frequency multiplier. In the proposed architecture, the input signals have a pulsed waveform that involves many high-order harmonics. Using an LC-tank that amplifies only the target harmonic component, while suppressing others, the output signal at the target frequency can be obtained. Since the core current flows for a very short duration, due to the pulsed input signals, the average power consumption can be dramatically reduced. Effective removal of spurious tones due to the damping of the signal is achieved using a limiting amplifier. In this work, a prototype frequency tripler using the proposed architecture was designed in a 65 nm CMOS process. The power consumption was 950 ??W, and the active area was 0.08 mm2. At a 3.12 GHz frequency, the phase noise degradation with respect to the theoretical bound was less than 0.5 dB. Second, Chapter 4 presents an ultra-low-phase-noise ILFM for millimeter wave (mm-wave) fifth-generation (5G) transceivers. Using an ultra-low-power frequency-tracking loop (FTL), the proposed ILFM is able to correct the frequency drifts of the quadrature voltage-controlled oscillator of the ILFM in a real-time fashion. Since the FTL is monitoring the averages of phase deviations rather than detecting or sampling the instantaneous values, it requires only 600??W to continue to calibrate the ILFM that generates an mm-wave signal with an output frequency from 27 to 30 GHz. The proposed ILFM was fabricated in a 65-nm CMOS process. The 10-MHz phase noise of the 29.25-GHz output signal was ???129.7 dBc/Hz, and its variations across temperatures and supply voltages were less than 2 dB. The integrated phase noise from 1 kHz to 100 MHz and the rms jitter were???39.1 dBc and 86 fs, respectively. Third, Chapter 5 presents a low-jitter, low-reference-spur ring voltage-controlled oscillator (ring VCO)-based ILCM. Since the proposed triple-point frequency/phase/slope calibrator (TP-FPSC) can accurately remove the three root causes of the frequency errors of ILCMs (i.e., frequency drift, phase offset, and slope modulation), the ILCM of this work is able to achieve a low-level reference spur. In addition, the calibrating loop for the frequency drift of the TP-FPSC offers an additional suppression to the in-band phase noise of the output signal. This capability of the TP-FPSC and the naturally wide bandwidth of the injection-locking mechanism allows the ILCM to achieve a very low RMS jitter. The ILCM was fabricated in a 65-nm CMOS technology. The measured reference spur and RMS jitter were ???72 dBc and 140 fs, respectively, both of which are the best among the state-of-the-art ILCMs. The active silicon area was 0.055 mm2, and the power consumption was 11.0 mW.clos

0.42 THz Transmitter with Dielectric Resonator Array Antenna

Off chip antennas do not occupy the expensive die area, as there is no limitation on their building material, and can be built in any size and shape to match the system requirements, which are all in contrast to on-chip antenna solutions. However, integration of off-chip antennas with Monolithic-Microwave-Integrated Chips (MMIC) and designing a low loss signal transmission from the signal source inside the MMIC to the antenna module is a major challenge and trade off. High resistivity silicon (HRS), is a low cost and extremely low loss material at sub-THz. It has become a prevailing material in fabrication of passive components for THz applications. This work makes use of HRS to build an off-chip Dielectric Resonator Antenna Array Module (DRAAM) to realize a highly efficient transmitter at 420 GHz. This work proposes novel techniques and solutions for design and integration of DRRAM with MMIC as the signal source. A proposed scalable 4×4 antenna structure aligns DRRAM on top of MMIC within 2 μm accuracy through an effortless assembly procedure. DRAAM shows 15.8 dB broadside gain and 0.85 efficiency. DRAs in the DRAAM are differentially excited through aperture coupling. Differential excitation not only inherently provides a mechanism to deliver more power to the antenna, it also removes the additional loss of extra balluns when outputs are differential inside MMIC. In addition, this work proposes a technique to double the radiation power from each DRA. Same radiating mode at 0.42 THz inside every DRA is excited through two separate differential sources. This approach provides an almost loss-less power combining mechanism inside DRA. Two 140_GHz oscillators followed by triplers drive each DRA in the demonstrated 4×4 antenna array. Each oscillator generates 7.2 dBm output power at 140 GHz with -83 dBc/Hz phase noise at 100 KHz and consumes 25 mW of power. An oscillator is followed by a tripler that generates -8 dBm output power at 420 GHz. Oscillator and tripler circuits use a smart layer stack up arrangement for their passive elements where the top metal layer of the die is grounded to comply with the planned integration arrangement. This work shows a novel circuit topology for exciting the antenna element which creates the feed element part of the tuned load for the tripler circuit, therefore eliminates the loss of the transition component, and maximizes the output power delivered to the antenna. The final structure is composed of 32 injection locked oscillators and drives a 4×4 DRAAM achieves 22.8 dBm EIRP

Quadrature Frequency Synthesis for Wideband Wireless Transceivers

University of Minnesota Ph.D. dissertation. May 2014. Major: Electrical Engineering. Advisor: Ramesh Harjani. 1 computer file (PDF); xi, 112 pages.In this thesis, three different techniques pertinent to quadrature LO generation in high data rate and wideband RF transceivers are presented. Prototype designs are made to verify the performance of the proposed techniques, in three different technologies: IBM 130nm CMOS process, TSMC 65nm CMOS process and IBM 32nm SOI process. The three prototype designs also cover three different frequency bands, ranging from 5GHz to 74GHz. First, an LO generation scheme for a 21 GHz center-frequency, 4-GHz instantaneous bandwidth channelized receiver is presented. A single 1.33 GHz reference source is used to simultaneously generate 20 GHz and 22 GHz LOs with quadrature outputs. Injection locking is used instead of conventional PLL techniques allowing low-power quadrature generation. A harmonic-rich signal, containing both even and odd harmonics of the input reference signal, is generated using a digital pulse slimmer. Two ILO chains are used to lock on to the 10th and 11th harmonics of the reference signal generating the 20 GHz and the 22 GHz quadrature LOs respectively. The prototype design is implemented in IBM's 130 nm CMOS process, draws 110 mA from a 1.2 V supply and occupies an active area of 1.8 square-mm. Next, a wide-tuning range QVCO with a novel complimentary-coupling technique is presented. By using PMOS transistors for coupling two VCOs with NMOS gm-cells, it is shown that significant phase-noise improvement (7-9 dB) can be achieved over the traditional NMOS coupling. This breaks the trade-off between quadrature accuracy and phase-noise, allowing reasonable accuracy without a significant phase-noise hit. The proposed technique is frequency-insensitive, allowing robust coupling over a wide tuning range. A prototype design is done in TSMC 65nm process, with 4-bits of discrete tuning spanning the frequency range 4.6-7.8 GHz (52% FTR) while achieving a minimum FOM of 181.4dBc/Hz and a minimum FOMT of 196dBc/Hz. Finally, a wide tuning-range millimeter wave QVCO is presented that employs a modified transformer-based super-harmonic coupling technique. Using the proposed technique, together with custom-designed inductors and metal capacitors, a prototype is designed in IBM 32nm SOI technology with 6-bits of discrete tuning using switched capacitors. Full EM-extracted simulations show a tuning range of 53.84GHz to 73.59GHz, with an FOM of 173 dBc/Hz and an FOMT of 183 dBc/Hz. With 19.75GHz of tuning range around a 63.7GHz center frequency, the simulated FTR is 31%, surpassing all similar designs in the same band. A slight modification in the tank inductors would enable the QVCO to be employed in multiple mm-Wave bands (57-66 GHz communication band, 71-76 GHz E-band, and 76-77 GHz radar band)