13 research outputs found

    Design of PVT Tolerant Inverter Based Circuits for Low Supply Voltages

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    University of Minnesota Ph.D. dissertation. June 2015. Major: Electrical Engineering. Advisor: Ramesh Harjani. 1 computer file (PDF); xiv, 187 pages.Rapid advances in the field of integrated circuit design has been advantageous from the point of view of cost and miniaturization. Although technology scaling is advantageous to digital circuits in terms of increased speed and lower power, analog circuits strongly suffer from this trend. This is becoming a crucial bottle neck in the realization of a system on chip in scaled technology merging high-density digital parts, with high performance analog interfaces. This is because scaled technologies reduce the output impedance (gain) and supply voltage which limits the dynamic range (output swing). One way to mitigate the power supply restrictions is to move to current mode circuit circuit design rather than voltage mode designs. This thesis focuses on designing Process Voltage and Temperature (PVT) tolerant base band circuits at lower supply voltages and in lower technologies. Inverter amplifiers are known to have better transconductance efficiency, better noise and linearity performance. But inverters are prone to PVT variations and has poor CMRR and PSRR. To circumvent the problem, we have proposed various biasing schemes for inverter like semi constant current biasing, constant current biasing and constant gm biasing. Each biasing technique has its own advantages, like semi constant current biasing allows to select different PMOS and NMOS current. This feature allows for higher inherent inverter linearity. Similarly constant current and constant gm biasing allows for reduced PVT sensitivity. The inverter based OTA achieves a measured THD of -90.6 dB, SNR of 78.7 dB, CMRR 97dB, PSRR 61 dB wile operating from a nominal power of 0.9V and at output swing of 0.9V{pp,diff} in TSMC 40nm general purpose process. Further the measured third harmonic distortion varies approximately by 11.5dB with 120C variation in temperature and 9dB with a 18% variation in supply voltage. The linearity can be increased by increasing the loop gain and bandwidth in a negative feedback circuit or by increasing the over drive voltage in open loop architectures. However both these techniques increases the noise contribution of the circuit. There exist a trade off between noise and linearity in analog circuits. To circumvent this problem, we have introduced nonlinear cancellation techniques and noise filtering techniques. An analog-to-digital converter (ADC) driver which is capable of amplifying the continuous time signal with a gain of 8 and sample onto the input capacitor(1pF) of 1 10 bit successive approximation register (SAR) ADC is designed in TSMC 65nm general purpose process. This exploits the non linearity cancellation in current mirror and also allows for higher bandwidth operation by decoupling closed loop gain from the negative feedback loop. The noise from the out of band is filtered before sampling leading to low noise operation. The measured design operates at 100MS/s and has an OIP_3 of 40dBm at the nyquist rate, noise power spectral density of 17nV/sqrt{Hz} and inter modulation distortion of 65dB. The intermodulation distortion variation across 10 chips is 6dB and 4dB across a temperature variation of 120C. Non linearity cancellation is exploited in designing two filters, an anti alias filter and a continuously tunable channel select filter. Traditional active RC filters are based on cascade of integrators. These create multiple low impedance nodes in the circuit which results in a higher noise. We propose a real low pass filter based filter architecture rather than traditional integrator based approach. Further the entire filtering operation takes place in current domain to circumvent the power supply limitations. This also facilitates the use of tunable non linear metal oxide semiconductor capacitor (MOSCAP) as filter capacitors. We introduce techniques of self compensation to use the filter resistor and capacitor as compensation capacitor for lower power. The anti alias filter designed for 50MHz bandwidth is fabricated in IBM 65nm process achieves an IIP3 of 33dBm, while consuming 1.56mW from 1.2 V supply. The channel select filter is tunable from 34MHz to 314MHz and is fabricated in TSMC 65nm general purpose process. This filter achieves an OIP3 of 25.24 dBm at the maximum frequency while drawing 4.2mA from 1.1V supply. The measured intermodulation distortion varies by 5dB across 120C variation in temperature and 6.5dB across a 200mV variation in power supply. Further this filter presents a high impedance node at the input and a low impedance node at the output easing system integration. SAR ADCs are becoming popular at lower technologies as they are based on device switching rather than amplifying circuits. But recent SAR ADCs that have good energy efficiency have had relatively large input capacitance increasing the driver power. We present a 2X time interleaved (TI) SAR ADC which has the lowest input capacitance of 133fF in literature. The sampling capacitor is separated from the capacitive digital to analog converter (DAC) array by performing the input and DAC reference subtraction in the current domain rather than as done traditionally in charge domain. The proposed ADC is fabricated in TSMC's 65nm general purpose process and occupies an area of 0.0338 mm^2. The measured ADC spurious free dynamic range (SFDR) is 57dB and the measured effective number of bits (ENOB) at nyquist rate is 7.55 bit while using 1.55mW power from 1 V supply. A sub 1V reference circuit is proposed, that exploits the complementary to absolute temperature (CTAT) and proportional to absolute temperature (PTAT) voltages in the beta multiplier circuit to attain a stable voltage with temperature and power supply. A one-time calibration is integrated in the architecture to get a good performance over process. Chopper stabilization is employed to reduce the flicker noise of the reference circuit. The prototype was simulated in TSMC 65nm process and we obtain the nominal output of 236mW, while consuming 0.7mW from power supply. Simulations show a temperature coefficient of 18 ppmC from -40 to 100C and with a power supply ranging from 0.8 to 2V

    Design of Analog-to-Digital Converters with Embedded Mixing for Ultra-Low-Power Radio Receivers

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    In the field of radio receivers, down-conversion methods usually rely on one (or more) explicit mixing stage(s) before the analog-to-digital converter (ADC). These stages not only contribute to the overall power consumption but also have an impact on area and can compromise the receiver’s performance in terms of noise and linearity. On the other hand, most ADCs require some sort of reference signal in order to properly digitize an analog input signal. The implementation of this reference signal usually relies on bandgap circuits and reference buffers to generate a constant, stable, dc signal. Disregarding this conventional approach, the work developed in this thesis aims to explore the viability behind the usage of a variable reference signal. Moreover, it demonstrates that not only can an input signal be properly digitized, but also shifted up and down in frequency, effectively embedding the mixing operation in an ADC. As a result, ADCs in receiver chains can perform double-duty as both a quantizer and a mixing stage. The lesser known charge-sharing (CS) topology, within the successive approximation register (SAR) ADCs, is used for a practical implementation, due to its feature of “pre-charging” the reference signal prior to the conversion. Simulation results from an 8-bit CS-SAR ADC designed in a 0.13 μm CMOS technology validate the proposed technique

    Low Power and Small Area Mixed-Signal Circuits:ADCs, Temperature Sensors and Digital Interfaces

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    Novel techniques for the design and practical realization of switched-capacitor circuits in deep-submicron CMOS technologies

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    Dissertação apresentada para obtenção do Grau de Doutor em Engenharia Electrotécnica e de Computadores pela Universidade Nova de Lisboa, Faculdade de Ciências e TecnologiaSwitches presenting high linearity are more and more required in switched-capacitor circuits,namely in 12 to 16 bits resolution analog-to-digital converters. The CMOS technology evolves continuously towards lower supply voltages and, simultaneously, new design techniques are necessary to fulfill the realization of switches exhibiting a high dynamic range and a distortion compatible with referred resolutions. Moreover, with the continuously downing of the sizes, the physic constraints of the technology must be considered to avoid the excessive stress of the devices when relatively high voltages are applied to the gates. New switch-linearization techniques, with high reliability, must be necessarily developed and demonstrated in CMOS integrated circuits. Also, the research of new structures of circuits with switched-capacitor is permanent. Simplified and efficient structures are mandatory, adequate to the new demands emerging from the proliferation of portable equipments, necessarily with low energy consumption while assuring high performance and multiple functions. The work reported in this Thesis comprises these two areas. The behavior of the switches under these new constraints is analyzed, being a new and original solution proposed, in order to maintain the performance. Also, proposals for the application of simpler clock and control schemes are presented, and for the use of open-loop structures and amplifiers with localfeedback. The results, obtained in laboratory or by simulation, assess the feasibility of the presented proposals

    Low-power high-performance SAR ADC with redundancy and digital background calibration

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    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.Cataloged from student-submitted PDF version of thesis.Includes bibliographical references (p. 195-199).As technology scales, the improved speed and energy eciency make the successive- approximation-register (SAR) architecture an attractive alternative for applications that require high-speed and high-accuracy analog-to-digital converters (ADCs). In SAR ADCs, the key linearity and speed limiting factors are capacitor mismatch and incomplete digital-to-analog converter (DAC)/reference voltage settling. In this the- sis, a sub-radix-2 SAR ADC is presented with several new contributions. The main contributions include investigation of using digital error correction (redundancy) in SAR ADCs for dynamic error correction and speed improvement, development of two new calibration algorithms to digitally correct for manufacturing mismatches, design of new architecture to incorporate redundancy within the architecture itself while achieving 94% better energy eciency compared to conventional switching algorithm, development of a new capacitor DAC structure to improve the SNR by four times with improved matching, joint design of the analog and digital circuits to create an asynchronous platform in order to reach the targeted performance, and analysis of key circuit blocks to enable the design to meet noise, power and timing requirements. The design is fabricated in standard 1P9M 65nm CMOS technology with 1.2V supply. The active die area is 0.083mm² with full rail-to-rail input swing of 2.4V p-p . A 67.4dB SNDR, 78.1dB SFDR, +1.0/-0.9 LSB₁₂ INL and +0.5/-0.7 LSB₁₂ DNL are achieved at 50MS/s at Nyquist rate. The total power consumption, including the estimated calibration and reference power, is 2.1mW, corresponding to 21.9fJ/conv.- step FoM. This ADC achieves the best FoM of any ADCs with greater than 10b ENOB and 10MS/s sampling rate.by Albert Hsu Ting Chang.Ph.D

    Low Power DC-DC Converters and a Low Quiescent Power High PSRR Class-D Audio Amplifier

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    High-performance DC-DC voltage converters and high-efficient class-D audio amplifiers are required to extend battery life and reduce cost in portable electronics. This dissertation focuses on new system architectures and design techniques to reduce area and minimize quiescent power while achieving high performance. Experimental results from prototype circuits to verify theory are shown. Firstly, basics on low drop-out (LDO) voltage regulators are provided. Demand for system-on-chip solutions has increased the interest in LDO voltage regulators that do not require a bulky off-chip capacitor to achieve stability, also called capacitor- less LDO (CL-LDO) regulators. Several architectures have been proposed; however, comparing these reported architectures proves difficult, as each has a distinct process technology and specifications. This dissertation compares CL-LDOs in a unified manner. Five CL-LDO regulator topologies were designed, fabricated, and tested under common design conditions. Secondly, fundamentals on DC-DC buck converters are presented and area reduction techniques for the external output filter, power stage, and compensator are proposed. A fully integrated buck converter using standard CMOS technology is presented. The external output filter has been fully-integrated by increasing the switching frequency up to 45 MHz. Moreover, a monolithic single-input dual-output buck converter is proposed. This architecture implements only three switches instead of the four switches used in conventional solutions, thus potentially reducing area in the power stage through proper design of the power switches. Lastly, a monolithic PWM voltage mode buck converter with compact Type-III compensation is proposed. This compensation scheme employs a combination of Gm-RC and Active-RC techniques to reduce the area of the compensator, while maintaining low quiescent power consumption and fast transient response. The proposed compensator reduces area by more than 45% when compared to an equivalent conventional Type-III compensator. Finally, basics on class-D audio amplifiers are presented and a clock-free current controlled class-D audio amplifier using integral sliding mode control is proposed. The proposed amplifier achieves up to 82 dB of power supply rejection ratio and a total harmonic distortion plus noise as low as 0.02%. The IC prototype’s controller consumes 30% less power than those featured in recently published works

    Digital Intensive Mixed Signal Circuits with In-situ Performance Monitors

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    University of Minnesota Ph.D. dissertation.November 2016. Major: Electrical/Computer Engineering. Advisor: Chris Kim. 1 computer file (PDF); x, 137 pages.Digital intensive circuit design techniques of different mixed-signal systems such as data converters, clock generators, voltage regulators etc. are gaining attention for the implementation of modern microprocessors and system-on-chips (SoCs) in order to fully utilize the benefits of CMOS technology scaling. Moreover different performance improvement schemes, for example, noise reduction, spur cancellation, linearity improvement etc. can be easily performed in digital domain. In addition to that, increasing speed and complexity of modern SoCs necessitate the requirement of in-situ measurement schemes, primarily for high volume testing. In-situ measurements not only obviate the need for expensive measurement equipments and probing techniques, but also reduce the test time significantly when a large number of chips are required to be tested. Several digital intensive circuit design techniques are proposed in this dissertation along with different in-situ performance monitors for a variety of mixed signal systems. First, a novel beat frequency quantization technique is proposed in a two-step VCO quantizer based ADC implementation for direct digital conversion of low amplitude bio- potential signals. By direct conversion, it alleviates the requirement of the area and power consuming analog-frontend (AFE) used in a conventional ADC designs. This prototype design is realized in a 65nm CMOS technology. Measured SNDR is 44.5dB from a 10mVpp, 300Hz signal and power consumption is only 38μW. Next, three different clock generation circuits, a phase-locked loop (PLL), a multiplying delay-locked loop (MDLL) and a frequency-locked loop (FLL) are presented. First a 0.4-to-1.6GHz sub-sampling fractional-N all digital PLL architecture is discussed that utilizes a D-flip-flop as a digital sub-sampler. Measurement results from a 65nm CMOS test-chip shows 5dB lower phase noise at 100KHz offset frequency, compared to a conventional architecture. The Digital PLL (DPLL) architecture is further extended for a digital MDLL implementation in order to suppress the VCO phase noise beyond the DPLL bandwidth. A zero-offset aperture phase detector (APD) and a digital- to-time converter (DTC) are employed for static phase-offset (SPO) cancellation. A unique in-situ detection circuitry achieves a high resolution SPO measurement in time domain. A 65nm test-chip shows 0.2-to-1.45GHz output frequency range while reducing the phase-noise by 9dB compared to a DPLL. Next, a frequency-to-current converter (FTC) based fractional FLL is proposed for a low accuracy clock generation in an extremely low area for IoT application. High density deep-trench capacitors are used for area reduction. The test-chip is fabricated in a 32nm SOI technology that takes only 0.0054mm2 active area. A high-resolution in-situ period jitter measurement block is also incorporated in this design. Finally, a time based digital low dropout (DLDO) regulator architecture is proposed for fine grain power delivery over a wide load current dynamic range and input/output voltage in order to facilitate dynamic voltage and frequency scaling (DVFS). High- resolution beat frequency detector dynamically adjusts the loop sampling frequency for ripple and settling time reduction due to load transients. A fixed steady-state voltage offset provides inherent active voltage positioning (AVP) for ripple reduction. Circuit simulations in a 65nm technology show more than 90% current efficiency for 100X load current variation, while it can operate for an input voltage range of 0.6V – 1.2V

    A Low Jitter Wideband Fractional-N Subsampling Phase Locked Loop (SSPLL)

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    Frequency synthesizers have become a crucial building block in the evolution of modern communication systems and consumer electronics. The spectral purity performance of frequency synthesizers limits the achievable data-rate and presents a noise-power tradeoff. For communication standards such as LTE where the channel spacing is a few kHz, the synthesizers must provide high frequencies with sufficiently wide frequency tuning range and fine frequency resolutions. Such stringent performance must be met with a limited power and small chip area. In this thesis a wideband fractional-N frequency synthesizer based on a subsampling phase locked loop (SSPLL) is presented. The proposed synthesizer which has a frequency resolution less than 100Hz employs a digital fractional controller (DFC) and a 10-bit digital-to-time converter (DTC) to delay the rising edges of the reference clock to achieve fractional phase lock. For fast convergence of the delay calibration, a novel two-step delay correlation loop (DCL) is employed. Furthermore, to provide optimum settling and jitter performance, the loop transfer characteristics during frequency acquisition and phase-lock are decoupled using a dual input loop filter (DILF). The fractional-N sub-sampling PLL (FNSSPLL) is implemented in a TSMC 40nm CMOS technology and occupies a total active area of 0.41mm^2. The PLL operates over frequency range of 2.8 GHz to 4.3 GHz (42% tuning range) while consuming 9.18mW from a 1.1V supply. The integrated jitter performance is better than 390 fs across all fractional frequency channel. The worst case fractional spur of -48.3 dBc occurs at a 650 kHz offset for a 3.75GHz fractional channel. The in-band phase noise measured at a 200 kHz offset is -112.5 dBc/Hz

    TIME-DIFFERENCE CIRCUITS: METHODOLOGY, DESIGN, AND DIGITAL REALIZATION

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    This thesis presents innovations for a special class of circuits called Time Difference (TD) circuits. We introduce a signal processing methodology with TD signals that alters the target signal from a magnitude perspective to time interval between two time events and systematically organizes the primary TD functions abstracted from existing TD circuits and systems. The TD circuits draw attention from a broad range of application fields. In addition, highly evolved complementary metal-oxide-semiconductor (CMOS) technology suffers from various problems related to voltage and current amplitude signal processing methods. Compared to traditional analog and digital circuits, TD circuits bring several compelling features: high-resolution, high-throughput, and low-design complexity with digital integration capability. Further, the fabrication technology is advancing into the nanometer regime; the reduction in voltage headroom limits the performance of traditional analog/mixed-signal designs. All-digital design of time-difference circuit needs to be stressed to adapt to the low-cost, low-power, and high-portability applications. We focus on Time-to-Digital Converters (TDC), one of the crucial building blocks in TD circuits. A novel algorithmic architecture is proposed based on a binary search algorithm and validated with both simulation and fabricated silicon. An all-digital structure Time-difference Amplifier (TDA) is designed and implemented to make FPGA and other all-digital implementations for TDC and related TD circuits feasible. Besides, we propose an all-digital timing measurement circuit based on the process variation from CMOS fabrication: PVTMC, which achieves a high measurement resolution:
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