A review of technologies and design techniques of millimeter-wave power amplifiers

his article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design

A Compact Self-similar Power Combining Topology

A compact, modular 16-way combiner is presented which is based on a self-similar combiner topology. The combiner achieves a simulated passive efficiency of 38% at 77 GHz in a standard 90nm process with 1.49 µm thick AI top metal. A 77 GHz power amplifier is built based on the combiner, combining the output power of 16 stages to achieve a P_(sat) of 11.4dBm, small signal gain of 9.4dB, and a 3dB bandwidth of more than 11 GHz on a 0.7V supply, with the optimal MAG for the technology being approximately 5dB at 77 GHz. The power amplifier is unconditionally stable with the K factor exceeding 3.8 between 50-90 GHz. The entire architecture is based on a modular power splitting and combining network that makes the design flexible and scalable. To the best of the authors' knowledge, this is the highest P_(sat) reported at 77 GHz in CMOS with a sub 1V quiescent V_(ds)

Efficient, High power Precision RF and mmWave Digital Transmitter Architectures

Digital transmitters offer several advantages over conventional analog transmitters such as reconfigurability, elimination of scaling-unfriendly, power hungry and bulky analog blocks and portability across technology. The rapid advancement of technology in CMOS processes also enables integration of complex digital signal processing circuitry on the same die as the digital transmitter to compensate for their non-idealities. The use of this digital assistance can, for instance, enable the use of highly efficient but nonlinear switching-class power amplifiers by compensating for their severe nonlinearity through digital predistortion. While this shift to digitally intensive transmitter architectures is propelled by the benefits stated above, several pressing challenges arise that vary in their nature depending on the frequency of operation - from RF to mmWave. Millimeter wave CMOS power amplifiers have traditionally been limited in output power due to the low breakdown voltage of scaled CMOS technologies and poor quality of on-chip passives. Moreover, high data-rates and efficient spectrum utilization demand highly linear power amplifiers with high efficiency under back-off. However, linearity and high efficiency are traditionally at odds with each other in conventional power amplifier design. In this dissertation, digital assistance is used to relax this trade-off and enable the use of state-of-the-art switching class power amplifiers. A novel digital transmitter architecture which simultaneously employs aggressive device-stacking and large-scale power combining for watt-class output power, dynamic load modulation for linearization, and improved efficiency under back-off by supply-switching and load modulation is presented. At RF frequencies, while the problem of watt-class power amplification has been long solved, more pressing challenges arise from the crowded spectrum in this regime. A major drawback of digital transmitters is the absence of a reconstruction filter after digital-to-analog conversion which causes the baseband quantization noise to get upconverted to RF and amplified at the output of the transmitter. In high power transmitters, this upconverted noise can be so strong as to prevent their use in FDD systems due to receiver desensitization or impose stringent coexistence challenges. In this dissertation, new quantization noise suppression techniques are presented which, for the first time, contribute toward making watt-class fully-integrated digital RF transmitters a viable alternative for FDD and coexistence scenarios. Specifically, the techniques involve embedding a mixed-domain multi-tap FIR filter within highly-efficient watt-class switching power amplifiers to suppress quantization noise, enhancing the bandwidth of noise suppression, enabling tunable location of suppression and overcoming the limitations of purely digital-domain filtering techniques for quantization noise

Four-element phased-array beamformers and a self-interference canceling full-duplex transciver in 130-nm SiGe for 5G applications at 26 GHz

This thesis is on the design of radio-frequency (RF) integrated front-end circuits for next generation 5G communication systems. The demand for higher data rates and lower latency in 5G networks can only be met using several new technologies including, but not limited to, mm-waves, massive-MIMO, and full-duplex. Use of mm-waves provides more bandwidth that is necessary for high data rates at the cost of increased attenuation in air. Massive-MIMO arrays are required to compensate for this increased path loss by providing beam steering and array gain. Furthermore, full duplex operation is desirable for improved spectrum efficiency and reduced latency. The difficulty of full duplex operation is the self-interference (SI) between transmit (TX) and receive (RX) paths. Conventional methods to suppress this interference utilize either bulky circulators, isolators, couplers or two separate antennas. These methods are not suitable for fully-integrated full-duplex massive-MIMO arrays. This thesis presents circuit and system level solutions to the issues summarized above, in the form of SiGe integrated circuits for 5G applications at 26 GHz. First, a full-duplex RF front-end architecture is proposed that is scalable to massive-MIMO arrays. It is based on blind, RF self-interference cancellation that is applicable to single/shared antenna front-ends. A high resolution RF vector modulator is developed, which is the key building block that empowers the full-duplex frontend architecture by achieving better than state-of-the-art 10-b monotonic phase control. This vector modulator is combined with linear-in-dB variable gain amplifiers and attenuators to realize a precision self-interference cancellation circuitry. Further, adaptive control of this SI canceler is made possible by including an on-chip low-power IQ downconverter. It correlates copies of transmitted and received signals and provides baseband/dc outputs that can be used to adaptively control the SI canceler. The solution comes at the cost of minimal additional circuitry, yet significantly eases linearity requirements of critical receiver blocks at RF/IF such as mixers and ADCs. Second, to complement the proposed full-duplex front-end architecture and to provide a more complete solution, high-performance beamformer ICs with 5-/6- b phase and 3-/4-b amplitude control capabilities are designed. Single-channel, separate transmitter and receiver beamformers are implemented targeting massive- MIMO mode of operation, and their four-channel versions are developed for phasedarray communication systems. Better than state-of-the-art noise performance is obtained in the RX beamformer channel, with a full-channel noise figure of 3.3 d

60 GHz transceiver circuits in SiGe-HBT and CMOS technologies

Die Erhöhung der Übertragungsrate von Kommunikationssystemen ist von hohem wissenschaftlichem und wirtschaftlichem Interesse. Die stetige Fortentwicklung dieser Systeme, sowohl unter Aspekten der Hard- als auch der Software, hat ein neues Technologiezeitalter eingeläutet. Verschiedene Szenarien, auf optischen, drahtgebundenen und drahtlosen Technologien basierend, wurden für diese Anwendungen entwickelt. Im 60 GHz ISM-Band (57 GHz bis 65 GHz) ist wegen der hohen Absorptionsverluste bei dieser Frequenz eine Kurzstrecken-Kommunikation mit hoher Datenrate von besonders hohem Interesse. Die Realisierung solcher Systeme erfolgt aufgrund von Kosten- und Massenproduktionsaspekten auf Basis von SiGe-HBT und CMOS Technologien. Schlüsselparameter eines 60 GHz-Transceivers sind eine hohe Ausgangsleistung, niedrige Rauschzahl, geringer Stromverbrauch und niedrige Herstellungskosten. Um den gesamten Frequenzbereich des 60 GHz ISM-Bandes abdecken zu können, wurden zahlreiche Transceivertopologien weltweit diskutiert. Die verfügbare Technologie mit ihren Schlüsselparametern ft, fmax stellt hierbei eine wichtige Randbedingung dar. In dieser Arbeit werden Aspekte des 60 GHz-Transceiver-Designs unter Verwendung einer 0,25 μm SiGe-HBT- und einer 90 nm CMOS-Technologie untersucht. Zunächst wird die Modellierung von passiven und aktiven Komponenten diskutiert. Verschiedene Techniken zur Modellextraktion basierend auf Messungen und elektromagnetischen Simulationen werden gezeigt. Für die wichtigsten passiven Bauelemente werden skalierbare Modelle entwickelt, um das Entwurfsverfahren zu präzisieren. Im nächsten Schritt werden 60 GHz CMOS- und SiGe-HBT- Leistungsverstärker untersucht. Basierend auf diesen Studien wurden zwei HBT und zwei CMOS-Endstufen konzipiert, realisiert und gemessen. Infolge der Verfügbarkeit einer hochgenauen Bauelemente-Bibliothek, ausgereifter Entwurfstechniken und der Verifikation auf Basis von EM-Simulationen konnte an den gemessenen Leistungsverstärkern eine hohe Ausgangsleistung mit guter Effizienz nachgewiesen werden. Die Ergebnisse zeigen weiterhin eine gute Übereinstimmung von Simulationen mit Messungen. Weiterhin wurden auf Basis einer 90 nm CMOS Technologie ein Heterodyne und ein OOK Transceiver entwickelt. Der Heterodyne-Transceiver mit einer Zwischenfrequenz von 20 GHz genügt dabei dem IEEE 802.15.3c Standard und erreicht eine Performance auf Höhe des internationalen Standes von Wissenschaft und Technik. Für den OOK Sender wurde eine neue Topologie entwickelt. Bei diesem Konzept bilden Modulator und Leistungsverstärker eine Einheit, woraus Vorteile hinsichtlich Ausgangsleistung, Effizienz und Chipgröße resultieren. Mit dieser Schaltung wurde in einem Systemtest eine Übertragungsrate von 6 Gbps über eine Entfernung von 4 m erfolgreich nachgewiesen.The rise of high-data-rate hungry applications has brought a new dawn to telecommunication technologies in both hardware and software development aspects. Different scenarios, mainly based on optical, coaxial and wireless systems, have been developed for these multi-gigabit communication systems. In these scenarios, the wireless system is utilized for indoor and short-range communication, which can ease the requirements on RF power and noise figure of the transceivers. However, the demand for multi-gigabit communication imposes a broadband performance requirement upon these wireless transceivers. This broadband performance requirement can be within the range of 2 GHz to 10 GHz. In order to cover such a broad frequency range, different transceiver circuit topologies have been suggested by many circuit designers. Due to the high oxygen loss in the 60 GHz range this 57 GHz to 65 GHz ISM band has attracted attention for high speed short-range communication. Moreover, the newly emerged low cost technologies (like, CMOS and SiGe HBT) have further attracted the industry to explore this communication band. The main requirements for a 60 GHz transceiver are high output power, low noise figure, low power consumption and broadband performance. To cover the whole 57 GHz to 65 GHz frequency band, numerous transceiver topologies are under discussion. The key parameter ft, fmax of the available technology define the achievable system performance. In this thesis, multiple aspects of the 60 GHz transceiver design based on the 90 nm CMOS and 0.25 μm SiGe HBT designs have been investigated. First, the modeling of passive and active components is presented. These components include capacitors, inductors, transformers, transmission lines, transistors, matching networks and RF pads. Different techniques for model extraction based on measurements and electromagnetic simulations have been examined. For inductors, transformers and capacitors scalable models have been developed. Further, the design techniques of 60 GHz CMOS and SiGe HBT power amplifiers have been studied. Based on these studies, two HBT and two CMOS power amplifiers have been designed, realized and measured. Due to accurate modeling and design techniques, high performance and good agreement with simulation has been achieved. Finally, two different types of transmitters (Heterodyne and OOK) based on the CMOS technology have been developed. The heterodyne transceiver, with an IF frequency of around 20 GHz, has been designed based on the IEEE 802.15.3c standard. This transmitter has achieved state of the art results with respect to output power, conversion gain and efficiency with a small chip size and low power consumption. For the OOK transmitter, a novel topology has been developed. In this topology, the modulator and the power amplifier have been integrated into one circuit. Due to many advantages of this new topology, this transmitter achieves higher output power and efficiency compared with state-of-the-art results. Furthermore, the realized circuit has been utilized within a wireless system where more than 6 Gbps has been successfully transmitted over a 4 m distance

Analysis and design of a high power millimeter-wave power amplifier in a SiGe BiCMOS technology

Our current society is characterized by an ever increasing need for bandwidth leading towards the exploration of new parts of the electromagnetic spectrum for data transmission. This results in a rising interest and development of millimeter-wave (mm-wave) circuits which hold the promise of short range multi-gigabit wireless transmissions at 60GHz. These relatively new applications are to co-exist with more established mm-wave consumer products including satellite systems in the Ka-band (26.5GHz - 40GHz) allowing e.g.: video broadcasting, voice over IP (VoIP), internet acces to remote areas, ... Both need significant linear power amplification due to the high attenuation typical for this part of the spectrum, however, satellite systems demand a saturated output power which is easily an order of magnitude larger (output powers in excess of 30dBm / 1W). Monolithic microwave integrated circuits (MMICs) employing III-V chip technologies, e.g.: gallium arsenide (GaAs), gallium nitride (GaN), have historically been the preferred choice to implement efficient mm-wave power amplifiers (PA) with a high saturated output power (>30dBm). To further increase the commercial viability of consumer products in this market segment a low manufacturing cost for the power amplifier, together with the possible integration of additional functions, is highly desirable. These features are the strongpoint of silicon based chip technologies like CMOS and SiGe BiCMOS. However, these technologies have a breakdown voltage typically below 2V for nodes capable of millimeter-wave applications while III-V transistors with equivalent frequency performance demonstrate breakdown voltages in excess of 8V. Because of this, output powers of CMOS and SiGe BiCMOS Ka-band power amplifiers rarely exceed 20dBm which poses the main hurdle for using these technologies in satellite communication (SATCOM). To overcome the limited output power of a single amplifying cell in a silicon technology, caused by the low breakdown voltage, multiple power amplifiers cells need to have their output power effectively combined on-chip. This requires the on-chip integration of high-Q passives within a relative small area to realize both the impedance transformation, to create the optimal load impedance for the different amplifier cells, and implement an efficient on-chip power combination network. Compared to III-V technologies this is again a challenge due to the use of a silicon substrate which introduces higher losses. Once a large enough on-chip output power is created, the issue of launching this signal to the outside world remains. Moreover, due to the limited efficiency of mm-wave PAs, the generated on-chip heat will increase when larger output power are required. This means a chipto-board interface with a low thermal resistance and a low loss electrical connection needs to be devised. Proof of the viability of silicon as a serious candidate for the integration of medium and high power Ka-band amplifiers will only be delivered by long term research and the actual creation of such an amplifier. In this context, the initial goal for the presented work is proposed. This consists of the creation of a power amplifier with a saturated output power above 24dBm (preferably 27dBm), a gain larger than 20dB and an efficiency in excess of 10% (preferably 15%). These specifications where conceived with the precondition of using a 250nm SiGe BiCMOS technology (IHP’s SG25H3) with an fT of 110GHz and a collector to emitter breakdown voltage in open base conditions (BVCEO) of 2.3V. The use of this technology is a significant challenge due to the limited speed, rule of thumb is to have at least one fifth of the fT as the operating frequency, which reflects in the attainable power added efficiency (PAE). On the other hand, proving the possible implementation in this “older” technology shows great potential towards the future integration in a fast technology (e.g.: IHP’s SG13G2, ft =300GHz). Next to issues caused by limitations of the chip technology, the proposed specifications allows to identify generic difficulties with high power silicon PA design, e.g.: design of efficient on-chip power combiners, thermal management, single-ended to differential conversion, ... As this work is of an academic nature the intention of this design was to leave the beaten track and explore alternative topologies. This has led to the adoption of a driver stage using translinear loops for biasing and a transformer-type Wilkinson power combiner previously only used in cable television (CATV) applications. Although the power combiner showed 2dB more loss than expected due to higher than expected substrate losses, both topologies show promise for further integration. Furthermore, an in-depth analysis was performed on the output stage which uses positive feedback to increase its gain. The entire design consists of a four-way power combining class AB power amplifier together with test structures of which the performance was verified by means of probing. Due to the previously mentioned higher than expected loss in the on-chip power combiner, the total output power and power added efficiency (PAE) was 2dB lower than expected from simulations. The result is a saturated output power at 32GHz of 24.1dBm with a PAE of 7.2% and a small signal gain of 25dB. This demonstrates the capability of SiGe BiCMOS to implement PA’s for medium-power mm-wave applications. Moreover, to the best of the author’s knowledge, this PA achieves the second highest saturated output power when comparing SiGe BiCMOS PA’s with center frequency in or close to the Ka-band. The 1dB compression point of this amplifier lies at 22.7dBm which is close to saturated output power and results in a low spectral regrowth when compared to commercial GaAs PA’s (compared with 2MBaud 16QAM input signal at 10dB back-off). Many possible improvements to this design remain. The most important would be the re-design of the on-chip power combiner, possibly with a floating ground shield, to reduce the losses and increase the total output power and PAE. Also the porting of the design to a faster chip technology might result in a considerable increase of the output stage efficiency at the cost of needing to combine more amplifier cells. The transition to a faster chip technology would additionally allow to use this design for alternative mm-wave applications like automotive radar at 79GHz andWiGig at 60GHz

Distributed Transformers for Broadband Monolithic Millimeter-Wave Integrated Power Amplifiers

Die vorliegende Arbeit beschreibt Methoden und Techniken zur Optimierung und Realisierung von verteilten magnetischen Transformatoren für deren Einsatz in Anpassnetzwerken von Monolithischen Integrierten Millimeterwellenschaltungen (engl. MMICs). Es werden Strategien für die Effizienz- und Bandbreitenoptimierung verteilter Transformatoren vorgestellt. Diese werden mit Hilfe einer optimierten Transformatorgeometrie verifiziert und anhand von zwei MMIC Leistungsverstärkern demonstriert