Développement d'une architecture innovante de récepteur radar à 77 GHz et démonstration en CMOS 28 nm FDSOI

Grâce à sa capacité à détecter des cibles éloignées malgré une mauvaise visibilité, le radar automobile à 77 GHz joue un rôle important dans l'aide à la conduite. L'utilisation des fréquences millimétriques offre une bonne résolution et une importante capacité d'intégration des circuits. C'est aussi un défi car il faut satisfaire un cahier des charges exigeant sur le bruit et la linéarité du récepteur. Les technologies SiGe BiCMOS ont été les premières utilisées pour la conception de récepteurs radar à 77 GHz. De bons résultats ont été obtenus en se basant sur des architectures utilisant des mélangeurs actifs. Cependant l'utilisation des technologie BiCMOS se traduisait par une consommation élevée, une faible capacité d'intégration et des coûts de production importants. Récemment, l'intégration des procédés CMOS menant à l'augmentation des fréquences de transition rend ces technologies plus attractives pour les applications nécessitant un faible coût et la cointégration de plusieurs fonctions au sein d'une même puce. La littérature sur les récepteurs radars en technologie CMOS à 77 GHz montre que les architectures inspirées par les technologies BiCMOS ne sont pas pertinentes pour cette application. Le but de cette thèse et de montrer que l'utilisation de techniques propres aux technologie CMOS comme l'échantillonnage et l'utilisation de portes logiques permet d'obtenir de très bonnes performances. Dans ce travail, deux nouvelles architectures de récepteurs radars basées sur le principe d'échantillonnage sont proposées. La première architecture est basée sur un mélangeur passif échantillonné qui permet d'obtenir un très bon compromis bruit/linéarité. La seconde exploite les propriétés des mélangeurs sous-échantillonnés afin utiliser une fréquence d'OL trois fois inférieure à la fréquence RF offrant ainsi de très intéressantes simplifications au niveau de la chaîne de distribution du signal d'OL du récepteur. Le contexte de cette étude est expliqué dans le 1er chapitre qui présente les exigences de conception liées à l'application radar et fourni une analyse de l'état de l'art des récepteurs à 77 GHZ. Le chapitre suivant décrit le principe de fonctionnement et l'implémentation d'un mélangeur échantillonné à 77 GHz en technologie CMOS 28- nm FDSOI. Une topologie de mélangeur sous-échantillonné utilisant une fréquence d'OL de 26 GHz pour convertir des signaux RF autour de 77 GHz est ensuite détaillée dans le chapitre 3. Le chapitre 4 conclut cette étude en détaillant l'intégration des mélangeurs étudiés dans les chapitres précédents avec un amplificateur faible bruit dans différents récepteurs radars. Ces architectures de récepteurs basées sur l'échantillonnage sont ensuite comparées entre elles et avec l'état de l'art montrant ainsi leurs avantages et inconvénients. Les résultats de cette comparaison confirment l'intérêt des techniques d'échantillonnage pour la conversion de fréquence dans le cadre de l'application radar.With its ability to detect distant targets under harsh visibility conditions, the 77 GHz automotive radar plays a key role in driving safety. Using mm-wave frequencies allow a good range resolution, a better circuit integration and a wide modulation bandwidth. This is also a challenge for circuit designers who must fulfill stringent requirements especially on the receiver front-end. First 77 GHz radar receivers were manufactured with SiGe BiCMOS processes benefiting from the high transition frequency and high breakdown voltage of Hetero-junction Bipolar Transistors (HBT). Good results have been achieved with active-mixer-based architectures, but these technologies suffer from high power consumptions, limited integration capacity and large production cost. More recently, the scaling down of CMOS processes (coming together with the increase of the transition frequency of the transistors) makes CMOS a good candidate for 77 GHz circuit design, especially when cost target requires single chip solutions. The literature related to CMOS radar receivers highlights that receivers based on BiCMOS architectures generally show poor performances. The aim of this work is to demonstrate that using CMOS specific technics such as sampling and the use of high-speed digital gates should enhance the performance of the receivers. In this work, two innovative radar receiver architectures based on the sampling principle are proposed. The first one shows that this principle can be extended to millimeter wave frequencies to benefit from a very good noise/linearity trade-off. While the second one uses this principle to converts a 77 GHz RF signal by using a 26 GHz LO frequency thus simplifying the LO distribution chain of the receiver. The background of this study is introduced in the chapter 1 presenting the design trade-off related to the 77 GHz radar receiver and provides a review of the existing solutions. The following chapter describes the sampling mixer principle and the implementation of a 77 GHz sampling mixer in 28-nm FDSOI CMOS technology. Then, a sub- sampling mixer topology allowing to convert an RF signal around 77 GHz using a 26 GHz LO frequency is detailed in the chapter 3. The chapter 4 draws the conclusion of this study by showing the implementation of the two proposed sampling-based mixers with a low noise amplifier in 77 GHz front ends. These receiver architectures are compared with the state of the art highlighting the strengths and weaknesses of the proposed solutions. The results of this study demonstrates that using sampling for down conversion can be convenient to address millimeter-wave frequency applications

Modelling of field-effect transistors based on 2D materials targeting high-frequency applications

New technologies are necessary for the unprecedented expansion of connectivity and communications in the modern technological society. The specific needs of wireless communication systems in 5G and beyond, as well as devices for the future deployment of Internet of Things has caused that the International Technology Roadmap for Semiconductors, which is the strategic planning document of the semiconductor industry, considered since 2011, graphene and related materials (GRMs) as promising candidates for the future of electronics. Graphene, a one-atom-thick of carbon, is a promising material for high-frequency applications due to its intrinsic superior carrier mobility and very high saturation velocity. These exceptional carrier transport properties suggest that GRM-based field-effect transistors could potentially outperform other technologies. This thesis presents a body of work on the modelling, performance prediction and simulation of GRM-based field-effect transistors and circuits. The main goal of this work is to provide models and tools to ease the following issues: (i) gaining technological control of single layer and bilayer graphene devices and, more generally, devices based on 2D materials, (ii) assessment of radio-frequency (RF) performance and microwave stability, (iii) benchmarking against other existing technologies, (iv) providing guidance for device and circuit design, (v) simulation of circuits formed by GRM-based transistors.Comment: Thesis, 164 pages, http://hdl.handle.net/10803/40531

An Energy-Efficient Reconfigurable Mobile Memory Interface for Computing Systems

The critical need for higher power efficiency and bandwidth transceiver design has significantly increased as mobile devices, such as smart phones, laptops, tablets, and ultra-portable personal digital assistants continue to be constructed using heterogeneous intellectual properties such as central processing units (CPUs), graphics processing units (GPUs), digital signal processors, dynamic random-access memories (DRAMs), sensors, and graphics/image processing units and to have enhanced graphic computing and video processing capabilities. However, the current mobile interface technologies which support CPU to memory communication (e.g. baseband-only signaling) have critical limitations, particularly super-linear energy consumption, limited bandwidth, and non-reconfigurable data access. As a consequence, there is a critical need to improve both energy efficiency and bandwidth for future mobile devices.;The primary goal of this study is to design an energy-efficient reconfigurable mobile memory interface for mobile computing systems in order to dramatically enhance the circuit and system bandwidth and power efficiency. The proposed energy efficient mobile memory interface which utilizes an advanced base-band (BB) signaling and a RF-band signaling is capable of simultaneous bi-directional communication and reconfigurable data access. It also increases power efficiency and bandwidth between mobile CPUs and memory subsystems on a single-ended shared transmission line. Moreover, due to multiple data communication on a single-ended shared transmission line, the number of transmission lines between mobile CPU and memories is considerably reduced, resulting in significant technological innovations, (e.g. more compact devices and low cost packaging to mobile communication interface) and establishing the principles and feasibility of technologies for future mobile system applications. The operation and performance of the proposed transceiver are analyzed and its circuit implementation is discussed in details. A chip prototype of the transceiver was implemented in a 65nm CMOS process technology. In the measurement, the transceiver exhibits higher aggregate data throughput and better energy efficiency compared to prior works

Self-Calibrated, Low-Jitter and Low-Reference-Spur Injection-Locked Clock Multipliers

Department of Electrical EngineeringThis dissertation focuses primarily on the design of calibrators for the injection-locked clock multiplier (ILCM). ILCMs have advantage to achieve an excellent jitter performance at low cost, in terms of area and power consumption. The wide loop bandwidth (BW) of the injection technique could reject the noise of voltage-controlled oscillator (VCO), making it thus suitable for the rejection of poor noise of a ring-VCO and a high frequency LC-VCO. However, it is difficult to use without calibrators because of its sensitiveness in process-voltage-temperature (PVT) variations. In Chapter 2, conventional frequency calibrators are introduced and discussed. This dissertation introduces two types of calibrators for low-power high-frequency LC-VCO-based ILFMs in Chapter 3 and Chapter 4 and high-performance ring-VCO-based ILCM in Chapter 5. First, Chapter 3 presents a low power and compact area LC-tank-based frequency multiplier. In the proposed architecture, the input signals have a pulsed waveform that involves many high-order harmonics. Using an LC-tank that amplifies only the target harmonic component, while suppressing others, the output signal at the target frequency can be obtained. Since the core current flows for a very short duration, due to the pulsed input signals, the average power consumption can be dramatically reduced. Effective removal of spurious tones due to the damping of the signal is achieved using a limiting amplifier. In this work, a prototype frequency tripler using the proposed architecture was designed in a 65 nm CMOS process. The power consumption was 950 ??W, and the active area was 0.08 mm2. At a 3.12 GHz frequency, the phase noise degradation with respect to the theoretical bound was less than 0.5 dB. Second, Chapter 4 presents an ultra-low-phase-noise ILFM for millimeter wave (mm-wave) fifth-generation (5G) transceivers. Using an ultra-low-power frequency-tracking loop (FTL), the proposed ILFM is able to correct the frequency drifts of the quadrature voltage-controlled oscillator of the ILFM in a real-time fashion. Since the FTL is monitoring the averages of phase deviations rather than detecting or sampling the instantaneous values, it requires only 600??W to continue to calibrate the ILFM that generates an mm-wave signal with an output frequency from 27 to 30 GHz. The proposed ILFM was fabricated in a 65-nm CMOS process. The 10-MHz phase noise of the 29.25-GHz output signal was ???129.7 dBc/Hz, and its variations across temperatures and supply voltages were less than 2 dB. The integrated phase noise from 1 kHz to 100 MHz and the rms jitter were???39.1 dBc and 86 fs, respectively. Third, Chapter 5 presents a low-jitter, low-reference-spur ring voltage-controlled oscillator (ring VCO)-based ILCM. Since the proposed triple-point frequency/phase/slope calibrator (TP-FPSC) can accurately remove the three root causes of the frequency errors of ILCMs (i.e., frequency drift, phase offset, and slope modulation), the ILCM of this work is able to achieve a low-level reference spur. In addition, the calibrating loop for the frequency drift of the TP-FPSC offers an additional suppression to the in-band phase noise of the output signal. This capability of the TP-FPSC and the naturally wide bandwidth of the injection-locking mechanism allows the ILCM to achieve a very low RMS jitter. The ILCM was fabricated in a 65-nm CMOS technology. The measured reference spur and RMS jitter were ???72 dBc and 140 fs, respectively, both of which are the best among the state-of-the-art ILCMs. The active silicon area was 0.055 mm2, and the power consumption was 11.0 mW.clos

CMOS Signal Synthesizers for Emerging RF-to-Optical Applications

The need for clean and powerful signal generation is ubiquitous, with applications spanning the spectrum from RF to mm-Wave, to into and beyond the terahertz-gap. RF applications including mobile telephony and microprocessors have effectively harnessed mixed-signal integration in CMOS to realize robust on-chip signal sources calibrated against adverse ambient conditions. Combined with low cost and high yield, the CMOS component of hand-held devices costs a few cents per part per million parts. This low cost, and integrated digital processing, make CMOS an attractive option for applications like high-resolution imaging and ranging, and the emerging 5-G communication space. RADAR techniques when expanded to optical frequencies can enable micrometers of resolution for 3D imaging. These applications, however, impose upto 100x more exacting specifications on power and spectral purity at much higher frequencies than conventional RF synthesizers. This generation of applications will present unconventional challenges for transistor technologies - whether it is to squeeze performance in the conventionally used spectrum, already wrung dry, or signal generation and system design in the relatively emptier mm-Wave to sub-mmWave spectrum, much of the latter falling in the ``Terahertz Gap". Indeed, transistor scaling and innovative device physics leading to new transistor topologies have yielded higher cut-off frequencies in CMOS, though still lagging well behind SiGe and III-V semiconductors. To avoid multimodule solutions with functionality partitioned across different technologies, CMOS must be pushed out of its comfort zone, and technology scaling has to have accompanying breakthroughs in design approaches not only at the system but also at the block level. In this thesis, while not targeting a specific application, we seek to formulate the obstacles in synthesizing high frequency, high power and low noise signals in CMOS and construct a coherent design methodology to address them. Based on this, three novel prototypes to overcome the limiting factors in each case are presented. The first half of this thesis deals with high frequency signal synthesis and power generation in CMOS. Outside the range of frequencies where the transistor has gain, frequency generation necessitates harmonic extraction either as harmonic oscillators or as frequency multipliers. We augment the traditional maximum oscillation frequency metric (fmax), which only accounts for transistor losses, with passive component loss to derive an effective fmax metric. We then present a methodology for building oscillators at this fmax, the Maximum Gain Ring Oscillator. Next, we explore generating large signals beyond fmax through harmonic extraction in multipliers. Applying concepts of waveform shaping, we demonstrate a Power Mixer that engineers transistor nonlinearity by manipulating the amplitudes and relative phase shifts of different device nodes to maximize performance at a specific harmonic beyond device cut-off. The second half proposes a new architecture for an ultra-low noise phase-locked loop (PLL), the Reference-Sampling PLL. In conventional PLLs, a noisy buffer converts the slow, low-noise sine-wave reference signal to a jittery square-wave clock against which the phase of a noisy voltage-controlled oscillator (VCO) is corrected. We eliminate this reference buffer, and measure phase error by sampling the reference sine-wave with the 50x faster VCO waveform already available on chip, and selecting the relevant sample with voltage proportional to phase error. By avoiding the N-squared multiplication of the high-power reference buffer noise, and directly using voltage-mode phase error to control the VCO, we eliminate several noisy components in the controlling loop for ultra-low integrated jitter for a given power consumption. Further, isolation of the VCO tank from any varying load, unlike other contemporary divider-less PLL architectures, results in an architecture with record performance in the low-noise and low-spur space. We conclude with work that brings together concepts developed for clean, high-power signal generation towards a hybrid CMOS-Optical approach to Frequency-Modulated Continuous-Wave (FMCW) Light-Detection-And-Ranging (LIDAR). Cost-effective tunable lasers are temperature-sensitive and have nonlinear tuning profiles, rendering precise frequency modulations or 'chirps' untenable. Locking them to an electronic reference through an electro-optic PLL, and electronically calibrating the control signal for nonlinearity and ambient sensitivity, can make such chirps possible. Approaches that build on the body of advances in electrical PLLs to control the performance, and ease the specification on the design of optical systems are proposed. Eventually, we seek to leverage the twin advantages of silicon-intensive integration and low-cost high-yield towards developing a single-chip solution that uses on-chip signal processing and phased arrays to generate precise and robust chirps for an electronically-steerable fine LIDAR beam

System and Circuit Design Techniques for Silicon-based Multi-band/Multi-standard Receivers

Today, the advances in Complementary MetalOxideSemiconductor (CMOS) technology have guided the progress in the wireless communications circuits and systems area. Various new communication standards have been developed to accommodate a variety of applications at different frequency bands, such as cellular communications at 900 and 1800 MHz, global positioning system (GPS) at 1.2 and 1.5 GHz, and Bluetooth andWiFi at 2.4 and 5.2 GHz, respectively. The modern wireless technology is now motivated by the global trend of developing multi-band/multistandard terminals for low-cost and multifunction transceivers. Exploring the unused 10-66 GHz frequency spectrum for high data rate communication is also another trend in the wireless industry. In this dissertation, the challenges and solutions for designing a multi-band/multistandard mobile device is addressed from system-level analysis to circuit implementation. A systematic system-level design methodology for block-level budgeting is proposed. The system-level design methodology focuses on minimizing the power consumption of the overall receiver. Then, a novel millimeter-wave dual-band receiver front-end architecture is developed to operate at 24 and 31 GHz. The receiver relies on a newly introduced concept of harmonic selection that helps to reduce the complexity of the dual-band receiver. Wideband circuit techniques for millimeterwave frequencies are also investigated and new bandwidth extension techniques are proposed for the dual-band 24/31 GHz receiver. These new techniques are applied for the low noise amplifier and millimeter-wave mixer resulting in the widest reported operating bandwidth in K-band, while consuming less power consumption. Additionally, various receiver building blocks, such as a low noise amplifier with reconfigurable input matching network for multi-band receivers, and a low drop-out regulator with high power supply rejection are analyzed and proposed. The low noise amplifier presents the first one with continuously reconfigurable input matching network, while achieving a noise figure comparable to the wideband techniques. The low drop-out regulator presented the first one with high power supply rejection in the mega-hertz frequency range. All the proposed building blocks and architecture in this dissertation are implemented using the existing silicon-based technologies, and resulted in several publications in IEEE Journals and Conferences

A Novel Retro-directive Phased Array Antenna Architecture

Mobile wireless communication scenarios can range from a simple indoor WiFi link to a satellite internet connection to an airplane. Virtually in all scenarios, dynamic changes in the propagation environment or the movement of transmitter and receiver are inevitable. Therefore, the wireless link often experiences quality degradation or even interruption. Adaptive antenna arrays offer a promising solution to combat wireless channel impairments as they adaptively reshape their radiation pattern. For two-way communication, an antenna should be retro-directive meaning its transmit and receive beams are aligned. To achieve retro-directivity, techniques based on direction-of-arrival and self-phasing can be used. The former usually calls for a complex calibration routine to estimate the direction of arrival and beamsteering; the latter relies on the received signal to generate the transmit beam, imposing several limitations on its adaptability. In this thesis, a novel retro-directive phased array architecture is proposed that does not require calibration and which generates its transmit wave independently of its receive wave. Moreover, its radiation pattern can be adaptively shaped by a simple beamforming algorithm, while its transmitted and received beams remain aligned. Structurally, it is comprised of independent modules that can be placed in virtually any arrangement without any hardware modification. The architecture uses the LO phase-shifting technique to steer its beams. The LO signals are generated with a novel frequency synthesizer; it creates a pair of LO signals for the transmission and reception paths to achieve retro-directivity. The proposed antenna architecture is demonstrated practically using a 10-element prototype, verifying its ability to steer the transmit and receive beams while keeping them aligned. In addition, two of the key circuit components of the LO synthesizer, a fractional frequency divider and a novel phase-conjugating phase shifter, are designed and successfully implemented on 65nm CMOS technology, paving the path for use in future applications

Terahertz Technology and Its Applications

The Terahertz frequency range (0.1 – 10)THz has demonstrated to provide many opportunities in prominent research fields such as high-speed communications, biomedicine, sensing, and imaging. This spectral range, lying between electronics and photonics, has been historically known as “terahertz gap” because of the lack of experimental as well as fabrication technologies. However, many efforts are now being carried out worldwide in order improve technology working at this frequency range. This book represents a mechanism to highlight some of the work being done within this range of the electromagnetic spectrum. The topics covered include non-destructive testing, teraherz imaging and sensing, among others

Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors

transformatiu CRUE-CSICUTP en procés de revisióAltres ajuts: GraphCAT project reference 001-P-001702The progress made toward the definition of a modular compact modeling technology for graphene field-effect transistors (GFETs) that enables the electrical analysis of arbitrary GFET-based integrated circuits is reported. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (frequency domain) analysis. Another set of secondary models accounts for the GFET non-idealities, such as extrinsic-, short-channel-, trapping/detrapping-, self-heating-, and non-quasi static-effects, which can have a significant impact under static and/or dynamic operation. At both device and circuit levels, significant consistency is demonstrated between the simulation output and experimental data for relevant operating conditions. Additionally, a perspective of the challenges during the scale up of the GFET modeling technology toward higher technology readiness levels while drawing a collaborative scenario among fabrication technology groups, modeling groups, and circuit designers, is provided