700mV low power low noise implantable neural recording system design

This dissertation presents the work for design and implementation of a low power, low noise neural recording system consisting of Bandpass Amplifier and Pipelined Analog to Digital Converter (ADC) for recording neural signal activities. A low power, low noise two stage neural amplifier for use in an intelligent Radio-Frequency Identification (RFID) based on folded cascode Operational Transconductance Amplifier (OTA) is utilized to amplify the neural signals. The optimization of the number of amplifier stages is discussed to achieve the minimum power and area consumption. The amplifier power supply is 0.7V. The midband gain of amplifier is 58.4dB with a 3dB bandwidth from 0.71 to 8.26 kHz. Measured input-referred noise and total power consumption are 20.7 μVrms and 1.90 μW respectively. The measured result shows that the optimizing the number of stages can achieve lower power consumption and demonstrates the neural amplifier's suitability for instu neutral activity recording. The advantage of power consumption of Pipelined ADC over Successive Approximation Register (SAR) ADC and Delta-Sigma ADC is discussed. An 8 bit fully differential (FD) Pipeline ADC for use in a smart RFID is presented in this dissertation. The Multiplying Digital to Analog Converter (MDAC) utilizes a novel offset cancellation technique robust to device leakage to reduce the input drift voltage. Simulation results of static and dynamic performance show this low power Pipeline ADC is suitable for multi-channel neural recording applications. The performance of all proposed building blocks is verified through test chips fabricated in IBM 180nm CMOS process. Both bench-top and real animal test results demonstrate the system's capability of recording neural signals for neural spike detection

A 12-bit, 40 msamples/s, low-power, low-area pipeline analog-to-digital converter in CMOS 0.18 mum technology.

With advancements in digital signal processing in recent years, the need for high-speed, high-resolution analog-to-digital converters (ADCs) which can be used in the analog front-end has been increasing. Some examples of these applications are image and video signal processing, wireless communications and asymmetrical digital subscriber line (ADSL). In CMOS integrated circuit design, it is desirable to integrate the digital circuit and the ADC in one microchip to reduce the cost of fabrication. Consequently the power dissipation and area of the ADCs are important design factors. The original contributions in this thesis are as follows. Since the performance of pipeline ADCs significantly depends on the op-amps and comparators circuits, the performance of various comparators is analyzed and the effect of op-amp topology on the performance of pipeline ADCs is investigated. This thesis also presents a novel architecture for design of low-power and low-area pipelined ADCs which will be more useful for very low voltage applications in the future. At the schematic level, a low-power CMOS implementation of the current-mode MDAC is presented and an improved voltage comparator is designed. With the proposed design and the optimization methodology it is possible to reduce power dissipation and area compared with conventional fully differential schemes.Dept. of Electrical and Computer Engineering. Paper copy at Leddy Library: Theses & Major Papers - Basement, West Bldg. / Call Number: Thesis2004 .M64. Source: Masters Abstracts International, Volume: 43-01, page: 0281. Adviser: C. Chen. Thesis (M.A.Sc.)--University of Windsor (Canada), 2004

High-Speed Pipeline Analog-to-Digital Converter: Transistor-Level Design and Calibration Issues

La tesi riguarda la progettazione dei blocchi essenziali di un convertitore pipeline ad alta velocità (250MHz) a capacità commutate. Il lavoro inoltre include uno studio approfondito su due possibili tecniche di calibrazione del guadagno, delle non-linearità e del mismatch capacitivo

Palmo : a novel pulsed based signal processing technique for programmable mixed-signal VLSI

In this thesis a new signal processing technique is presented. This technique exploits the use of pulses as the signalling mechanism. This Palmo 1 signalling method applied to signal processing is novel, combining the advantages of both digital and analogue techniques. Pulsed signals are robust, inherently low-power, easily regenerated, and easily distributed across and between chips. The Palmo cells used to perform analogue operations on the pulsed signals are compact, fast, simple and programmable

Energy Harvesting for Self-Powered Wireless Sensors

A wireless sensor system is proposed for a targeted deployment in civil infrastructures (namely bridges) to help mitigate the growing problem of deterioration of civil infrastructures. The sensor motes are self-powered via a novel magnetic shape memory alloy (MSMA) energy harvesting material and a low-frequency, low-power rectifier multiplier (RM). Experimental characterizations of the MSMA device and the RM are presented. A study on practical implementation of a strain gauge sensor and its application in the proposed sensor system are undertaken and a low-power successive approximation register analog-to-digital converter (SAR ADC) is presented. The SAR ADC was fabricated and laboratory characterizations show the proposed low-voltage topology is a viable candidate for deployment in the proposed sensor system. Additionally, a wireless transmitter is proposed to transmit the SAR ADC output using on-off keying (OOK) modulation with an impulse radio ultra-wideband (IR-UWB) transmitter (TX). The RM and SAR ADC were fabricated in ON 0.5 micrometer CMOS process. An alternative transmitter architecture is also presented for use in the 3-10GHz UWB band. Unlike the IR-UWB TX described for the proposed wireless sensor system, the presented transmitter is designed to transfer large amounts of information with little concern for power consumption. This second method of data transmission divides the 3-10GHz spectrum into 528MHz sub-bands and "hops" between these sub-bands during data transmission. The data is sent over these multiple channels for short distances (?3-10m) at data rates over a few hundred million bits per second (Mbps). An UWB TX is presented for implementation in mode-I (3.1-4.6GHz) UWB which utilizes multi-band orthogonal frequency division multiplexing (MB-OFDM) to encode the information. The TX was designed and fabricated using UMC 0.13 micrometer CMOS technology. Measurement results and theoretical system level budgeting are presented for the proposed UWB TX

Ultra-low noise, high-frame rate readout design for a 3D-stacked CMOS image sensor

Due to the switch from CCD to CMOS technology, CMOS based image sensors have become smaller, cheaper, faster, and have recently outclassed CCDs in terms of image quality. Apart from the extensive set of applications requiring image sensors, the next technological breakthrough in imaging would be to consolidate and completely shift the conventional CMOS image sensor technology to the 3D-stacked technology. Stacking is recent and an innovative technology in the imaging field, allowing multiple silicon tiers with different functions to be stacked on top of each other. The technology allows for an extreme parallelism of the pixel readout circuitry. Furthermore, the readout is placed underneath the pixel array on a 3D-stacked image sensor, and the parallelism of the readout can remain constant at any spatial resolution of the sensors, allowing extreme low noise and a high-frame rate (design) at virtually any sensor array resolution. The objective of this work is the design of ultra-low noise readout circuits meant for 3D-stacked image sensors, structured with parallel readout circuitries. The readout circuit’s key requirements are low noise, speed, low-area (for higher parallelism), and low power. A CMOS imaging review is presented through a short historical background, followed by the description of the motivation, the research goals, and the work contributions. The fundamentals of CMOS image sensors are addressed, as a part of highlighting the typical image sensor features, the essential building blocks, types of operation, as well as their physical characteristics and their evaluation metrics. Following up on this, the document pays attention to the readout circuit’s noise theory and the column converters theory, to identify possible pitfalls to obtain sub-electron noise imagers. Lastly, the fabricated test CIS device performances are reported along with conjectures and conclusions, ending this thesis with the 3D-stacked subject issues and the future work. A part of the developed research work is located in the Appendices.Devido à mudança da tecnologia CCD para CMOS, os sensores de imagem em CMOS tornam se mais pequenos, mais baratos, mais rápidos, e mais recentemente, ultrapassaram os sensores CCD no que respeita à qualidade de imagem. Para além do vasto conjunto de aplicações que requerem sensores de imagem, o próximo salto tecnológico no ramo dos sensores de imagem é o de mudar completamente da tecnologia de sensores de imagem CMOS convencional para a tecnologia “3D-stacked”. O empilhamento de chips é relativamente recente e é uma tecnologia inovadora no campo dos sensores de imagem, permitindo vários planos de silício com diferentes funções poderem ser empilhados uns sobre os outros. Esta tecnologia permite portanto, um paralelismo extremo na leitura dos sinais vindos da matriz de píxeis. Além disso, num sensor de imagem de planos de silício empilhados, os circuitos de leitura estão posicionados debaixo da matriz de píxeis, sendo que dessa forma, o paralelismo pode manter-se constante para qualquer resolução espacial, permitindo assim atingir um extremo baixo ruído e um alto debito de imagens, virtualmente para qualquer resolução desejada. O objetivo deste trabalho é o de desenhar circuitos de leitura de coluna de muito baixo ruído, planeados para serem empregues em sensores de imagem “3D-stacked” com estruturas altamente paralelizadas. Os requisitos chave para os circuitos de leitura são de baixo ruído, rapidez e pouca área utilizada, de forma a obter-se o melhor rácio. Uma breve revisão histórica dos sensores de imagem CMOS é apresentada, seguida da motivação, dos objetivos e das contribuições feitas. Os fundamentos dos sensores de imagem CMOS são também abordados para expor as suas características, os blocos essenciais, os tipos de operação, assim como as suas características físicas e suas métricas de avaliação. No seguimento disto, especial atenção é dada à teoria subjacente ao ruído inerente dos circuitos de leitura e dos conversores de coluna, servindo para identificar os possíveis aspetos que dificultem atingir a tão desejada performance de muito baixo ruído. Por fim, os resultados experimentais do sensor desenvolvido são apresentados junto com possíveis conjeturas e respetivas conclusões, terminando o documento com o assunto de empilhamento vertical de camadas de silício, junto com o possível trabalho futuro

Bandpass electromechanical sigma-delta modulator

Ph.DDOCTOR OF PHILOSOPH

Low power digital baseband core for wireless Micro-Neural-Interface using CMOS sub/near-threshold circuit

This thesis presents the work on designing and implementing a low power digital baseband core with custom-tailored protocol for wirelessly powered Micro-Neural-Interface (MNI) System-on-Chip (SoC) to be implanted within the skull to record cortical neural activities. The core, on the tag end of distributed sensors, is designed to control the operation of individual MNI and communicate and control MNI devices implanted across the brain using received downlink commands from external base station and store/dump targeted neural data uplink in an energy efficient manner. The application specific protocol defines three modes (Time Stamp Mode, Streaming Mode and Snippet Mode) to extract neural signals with on-chip signal conditioning and discrimination. In Time Stamp Mode, Streaming Mode and Snippet Mode, the core executes basic on-chip spike discrimination and compression, real-time monitoring and segment capturing of neural signals so single spike timing as well as inter-spike timing can be retrieved with high temporal and spatial resolution. To implement the core control logic using sub/near-threshold logic, a novel digital design methodology is proposed which considers INWE (Inverse-Narrow-Width-Effect), RSCE (Reverse-Short-Channel-Effect) and variation comprehensively to size the transistor width and length accordingly to achieve close-to-optimum digital circuits. Ultra-low-power cell library containing 67 cells including physical cells and decoupling capacitor cells using the optimum fingers is designed, laid-out, characterized, and abstracted. A robust on-chip sense-amp-less SRAM memory (8X32 size) for storing neural data is implemented using 8T topology and LVT fingers. The design is validated with silicon tapeout and measurement shows the digital baseband core works at 400mV and 1.28 MHz system clock with an average power consumption of 2.2 μW, resulting in highest reported communication power efficiency of 290Kbps/μW to date

CMOS SPAD-based image sensor for single photon counting and time of flight imaging

The facility to capture the arrival of a single photon, is the fundamental limit to the detection of quantised electromagnetic radiation. An image sensor capable of capturing a picture with this ultimate optical and temporal precision is the pinnacle of photo-sensing. The creation of high spatial resolution, single photon sensitive, and time-resolved image sensors in complementary metal oxide semiconductor (CMOS) technology offers numerous benefits in a wide field of applications. These CMOS devices will be suitable to replace high sensitivity charge-coupled device (CCD) technology (electron-multiplied or electron bombarded) with significantly lower cost and comparable performance in low light or high speed scenarios. For example, with temporal resolution in the order of nano and picoseconds, detailed three-dimensional (3D) pictures can be formed by measuring the time of flight (TOF) of a light pulse. High frame rate imaging of single photons can yield new capabilities in super-resolution microscopy. Also, the imaging of quantum effects such as the entanglement of photons may be realised. The goal of this research project is the development of such an image sensor by exploiting single photon avalanche diodes (SPAD) in advanced imaging-specific 130nm front side illuminated (FSI) CMOS technology. SPADs have three key combined advantages over other imaging technologies: single photon sensitivity, picosecond temporal resolution and the facility to be integrated in standard CMOS technology. Analogue techniques are employed to create an efficient and compact imager that is scalable to mega-pixel arrays. A SPAD-based image sensor is described with 320 by 240 pixels at a pitch of 8μm and an optical efficiency or fill-factor of 26.8%. Each pixel comprises a SPAD with a hybrid analogue counting and memory circuit that makes novel use of a low-power charge transfer amplifier. Global shutter single photon counting images are captured. These exhibit photon shot noise limited statistics with unprecedented low input-referred noise at an equivalent of 0.06 electrons. The CMOS image sensor (CIS) trends of shrinking pixels, increasing array sizes, decreasing read noise, fast readout and oversampled image formation are projected towards the formation of binary single photon imagers or quanta image sensors (QIS). In a binary digital image capture mode, the image sensor offers a look-ahead to the properties and performance of future QISs with 20,000 binary frames per second readout with a bit error rate of 1.7 x 10-3. The bit density, or cumulative binary intensity, against exposure performance of this image sensor is in the shape of the famous Hurter and Driffield densitometry curves of photographic film. Oversampled time-gated binary image capture is demonstrated, capturing 3D TOF images with 3.8cm precision in a 60cm range

2.5D Chiplet Architecture for Embedded Processing of High Velocity Streaming Data

This dissertation presents an energy efficient 2.5D chiplet-based architecture for real-time probabilistic processing of high-velocity sensor data, from an autonomous real-time ubiquitous surveillance imaging system. This work addresses problems at all levels of description. At the lowest physical level, new standard cell libraries have been developed for ultra-low voltage CMOS synthesis, as well as custom SRAM memory blocks, and mixed-signal physical true random number generators based on the perturbation of Sigma-Delta structures using random telegraph noise (RTN) in single transistor devices. At the chip level architecture, an innovative compact buffer-less switched circuit mesh network on chip (NoC) capable of reaching very high throughput (1.6Tbps), finite packet delay delivery, free from packet dropping, and free from dead-locks and live-locks, was designed for this chiplet-based solution. Additionally, a second NoC connecting processors in the network, was implemented based on token-rings, allowing access to external DDR memory. Furthermore, a new clock tree distribution network, and a wide bandwidth DRAM physical interface have been designed to address the data flow requirements within and across chiplets. At the algorithm and representation levels, the Online Change Point Detection (CPD) algorithm has been implemented for on-line learning of background-foreground segmentation. Instead of using traditional binary representation of numbers, this architecture relies on unconventional processing of signals using a bio-inspired (spike-based) unary representation of numbers, where these numbers are represented in a stochastic stream of Bernoulli random variables. By using this representation, probabilistic algorithms can be executed in a native architecture with precision on demand, where if more accuracy is required, more computational time and power can be allocated. The SoC chiplet architecture has been extensively simulated and validated using state of the art CAD methodology, and has been submitted to fabrication in a dedicated 55nm GF CMOS technology wafer run. Experimental results from fabricated test chips in the same technology are also presented