A Breakdown Voltage Multiplier for High Voltage Swing Drivers

A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8 V on a 50 Ω load was implemented in a SiGe BiCMOS process. It uses the BV-Doubler topology to achieve output swings twice the collector–emitter breakdown voltage without stressing any single transistor

Integrated phased array systems in silicon

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications

A GHz-range, High-resolution Multi-modulus Prescaler for Extreme Environment Applications

The generation of a precise, low-noise, reliable clock source is critical to developing mixed-signal and digital electronic systems. The applications of such a clock source are greatly expanded if the clock source can be configured to output different clock frequencies. The phase-locked loop (PLL) is a well-documented architecture for realizing this configurable clock source. Principle to the configurability of a PLL is a multi-modulus divider. The resolution of this divider (or prescaler) dictates the resolution of the configurable PLL output frequency. In integrated PLL designs, such a multi-modulus prescaler is usually sourced from a GHz-range voltage-controlled oscillator. Therefore, a fully-integrated PLL ASIC requires the development of a high-speed, high-resolution multi-modulus prescaler. The design challenges associated with developing such a prescaler are compounded when the application requires the device to operate in an extreme environment. In these extreme environments (often extra-terrestrial), wide temperature ranges and radiation effects can adversely affect the operation of electronic systems. Even more problematic is that extreme temperatures and ionizing radiation can cause permanent damage to electronic devices. Typical commercial-off-the-shelf (COTS) components are not able withstand such an environment, and any electronics operating in these extreme conditions must be designed to accommodate such operation. This dissertation describes the development of a high-speed, high-resolution, multi-modulus prescaler capable of operating in an extreme environment. This prescaler has been developed using current-mode logic (CML) on a 180-nm silicon-germanium (SiGe) BiCMOS process. The prescaler is capable of operating up to at least 5.4 GHz over a division range of 16-48 with a total of 27 configurable moduli. The prescaler is designed to provide excellent ionizing radiation hardness, single-event latch-up (SEL) immunity, and single-event upset (SEU) resistance over a temperature range of −180°C to 125°C

Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications

In this paper, a 4.2-5.4 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mu m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase noise is -110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation-mode varactors. Phase noise was also found to be relatively low because of taking advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm(2) on Si substrate, including DC and RF pads

Design And Implementation Of Up-Conversion Mixer And Lc-Quadrature Oscillator For IEEE 802.11a WLAN Transmitter Application Utilizing 0.18 Pm CMOS Technology [TK7871.99.M44 H279 2008 f rb].

Perlumbaan implementasi litar terkamil radio, dengan kos yang rendah telah menggalakkan penggunaan teknologi CMOS. The drive for cost reduction has led to the use of CMOS technology for highly integrated radios

A 24-GHz SiGe Phased-Array Receiver—LO Phase-Shifting Approach

A local-oscillator phase-shifting approach is introduced to implement a fully integrated 24-GHz phased-array receiver using an SiGe technology. Sixteen phases of the local oscillator are generated in one oscillator core, resulting in a raw beam-forming accuracy of 4 bits. These phases are distributed to all eight receiving paths of the array by a symmetric network. The appropriate phase for each path is selected using high-frequency analog multiplexers. The raw beam-steering resolution of the array is better than 10 [degrees] for a forward-looking angle, while the array spatial selectivity, without any amplitude correction, is better than 20 dB. The overall gain of the array is 61 dB, while the array improves the input signal-to-noise ratio by 9 dB

Integrated radio frequency synthetizers for wireless applications

This thesis consists of six publications and an overview of the research topic, which is also a summary of the work. The research described in this thesis concentrates on the design of phase-locked loop radio frequency synthesizers for wireless applications. In particular, the focus is on the implementation of the prescaler, the phase detector, and the chargepump. This work reviews the requirements set for the frequency synthesizer by the wireless standards, and how these requirements are derived from the system specifications. These requirements apply to both integer-N and fractional-N synthesizers. The work also introduces the special considerations related to the design of fractional-N phase-locked loops. Finally, implementation alternatives for the different building blocks of the synthesizer are reviewed. The presented work introduces new topologies for the phase detector and the chargepump, and improved topologies for high speed CMOS prescalers. The experimental results show that the presented topologies can be successfully used in both integer-N and fractional-N synthesizers with state-of-the-art performance. The last part of this work discusses the additional considerations that surface when the synthesizer is integrated into a larger system chip. It is shown experimentally that the synthesizer can be successfully integrated into a complex transceiver IC without sacrificing the performance of the synthesizer or the transceiver.reviewe

A power efficient frequency divider with 55 GHz self-oscillating frequency in SiGe BiCMOS

A power efficient static frequency divider in commercial 55 nm SiGe BiCMOS technology isreported. A standard Current Mode Logic (CML)-based architecture is adopted, and optimizationof layout, biasing and transistor sizes allows achieving a maximum input frequency of 63 GHz anda self-oscillating frequency of 55 GHz, while consuming 23.7 mW from a 3 V supply. This resultsin high efficiency with respect to other static frequency dividers in BiCMOS technology presentedin the literature. The divider topology does not use inductors, thus optimizing the area footprint:the divider core occupies 60×65μm2on silicon