CMOS Integrated Circuits for Various Optical Applications

This chapter presents several CMOS integrated circuits (ICs) realized for various optical applications such as high-definition multimedia interface (HDMI), light detection and ranging (LiDAR), and Gigabit Ethernet (GbE). First, 4-channel 10-Gb/s per channel optical transmitter and receiver array chipset implemented in a 0.13-μm CMOS process are introduced to realize a 10-m active optical cable for HDMI 2.1 specifications. Second, a 16-channel optical receiver array chip is realized in a 0.18-μm CMOS technology for LiDAR applications. Third, a 40-GHz voltage-mode mirrored-cascode transimpedance amplifier (MC-TIA) is implemented in a 65-nm CMOS for a feasible 100-GbE application. Even with advanced nano-CMOS technologies, we have suggested novel circuit techniques for optimum performance, such as input data detection (IDD) for low power, feedforward and asymmetric preemphasis for high speed, double-gain feedforward for high gain, selectable equalizer (SEQ) for specific bandwidth, mirrored-cascode for fully differential topology, etc. We believe that these novel circuit techniques help to achieve low-cost, low-power solutions for various optical applications

Design of analog front-ends for the RD53 demonstrator chip

The RD53 collaboration is developing a large scale pixel front-end chip, which will be a tool to evaluate the performance of 65 nm CMOS technology in view of its application to the readout of the innermost detector layers of ATLAS and CMS at the HL-LHC. Experimental results of the characterization of small prototypes will be discussed in the frame of the design work that is currently leading to the development of the large scale demonstrator chip RD53A to be submitted in early 2017. The paper is focused on the analog processors developed in the framework of the RD53 collaboration, including three time over threshold front-ends, designed by INFN Torino and Pavia, University of Bergamo and LBNL and a zero dead time front-end based on flash ADC designed by a joint collaboration between the Fermilab and INFN. The paper will also discuss the radiation tolerance features of the front-end channels, which were exposed to up to 800 Mrad of total ionizing dose to reproduce the system operation in the actual experiment

Integrated Circuits/Microchips

With the world marching inexorably towards the fourth industrial revolution (IR 4.0), one is now embracing lives with artificial intelligence (AI), the Internet of Things (IoTs), virtual reality (VR) and 5G technology. Wherever we are, whatever we are doing, there are electronic devices that we rely indispensably on. While some of these technologies, such as those fueled with smart, autonomous systems, are seemingly precocious; others have existed for quite a while. These devices range from simple home appliances, entertainment media to complex aeronautical instruments. Clearly, the daily lives of mankind today are interwoven seamlessly with electronics. Surprising as it may seem, the cornerstone that empowers these electronic devices is nothing more than a mere diminutive semiconductor cube block. More colloquially referred to as the Very-Large-Scale-Integration (VLSI) chip or an integrated circuit (IC) chip or simply a microchip, this semiconductor cube block, approximately the size of a grain of rice, is composed of millions to billions of transistors. The transistors are interconnected in such a way that allows electrical circuitries for certain applications to be realized. Some of these chips serve specific permanent applications and are known as Application Specific Integrated Circuits (ASICS); while, others are computing processors which could be programmed for diverse applications. The computer processor, together with its supporting hardware and user interfaces, is known as an embedded system.In this book, a variety of topics related to microchips are extensively illustrated. The topics encompass the physics of the microchip device, as well as its design methods and applications

An integrated CMOS optical receiver with clock and data recovery Circuit

Traditional implementations of optical receivers are designed to operate with external photodetectors or require integration in a hybrid technology. By integrating a CMOS photodetector monolithically with an optical receiver, it can lead to the advantage of speed performance and cost. This dissertation describes the implementation of a photodetector in CMOS technology and the design of an optical receiver front-end and a clock and data recovery system. The CMOS detector converts the light input into an electrical signal, which is then amplified by the receiver front-end. The recovery system subsequently processes the amplified signal to extract the clock signal and retime the data. An inductive peaking methodology has been used extensively in the front-end. It allows the accomplishment of a necessary gain to compensate for an underperformed responsivity from the photodetector. The recovery circuits based on a nonlinear circuit technique were designed to detect the timing information contained in the data input. The clock and data recovery system consists of two units viz. a frequency-locked loop and a phase-locked loop. The frequency-locked loop adjusts the oscillator’s frequency to the vicinity of data rate before phase locking takes place. The phase-locked loop detects the relative locations between the data transition and the clock edge. It then synchronises the input data to the clock signal generated by the oscillator. A system level simulation was performed and it was found to function correctly and to comply with the gigabit fibre channel specification.Dissertation (MEng (Micro-Electronics))--University of Pretoria, 2007.Electrical, Electronic and Computer Engineeringunrestricte

Design and Fabrication of an Infrared Optical Pyrometer Asic as a Diagnostic for Shock Physics Experiments

Optical pyrometry is the sensing of thermal radiation emitted from an object using a photoconductive device to convert photons into electrons, and is an important diagnostic tool in shock physics experiments. Data obtained from an optical pyrometer can be used to generate a blackbody curve of the material prior to and after being shocked by a high speed projectile. The sensing element consists of an InGaAs photodiode array, biasing circuitry, and multiple transimpedance amplifiers to boost the weak photocurrent from the noisy dark current into a signal that can eventually be digitized. Once the circuit elements have been defined, more often than not commercial-off-the-shelf (COTS) components are inadequate to satisfy every requirement for the diagnostic, and therefore a custom application specific design has to be considered. This thesis outlines the initial challenges with integrating the photodiode array block with multiple COTS transimpedance amplifiers onto a single chip, and offers a solution to a comparable optical pyrometer that uses the same type of photodiodes in conjunction with a re-designed transimpedance amplifier integrated onto a single chip. The final design includes a thorough analysis of the transimpedance amplifier along with modeling the circuit behavior which entails schematics, simulations, and layout. An alternative circuit is also investigated that incorporates an approach to multiplex the signals from each photodiode onto one data line and not only increases the viable real estate on the chip, but also improves the behavior of the photodiodes as they are subjected to less thermal load. The optical pyrometer application specific integrated circuit (ASIC) for shock physic experiments includes a transimpedance amplifier (TIA) with a 100 kΩ gain operating at bandwidth of 30 MHz, and an input-referred noise RMS current of 50 nA that is capable of driving a 50 Ω load

Low-Power Slew-Rate Boosting Based 12-Bit Pipeline ADC Utilizing Forecasting Technique in the Sub-ADCS

The dissertation presents architecture and circuit solutions to improve the power efficiency of high-speed 12-bit pipelined ADCs in advanced CMOS technologies. First, the 4.5bit algorithmic pipelined front-end stage is proposed. It is shown that the algorithmic pipelined ADC requires a simpler sub-ADC and shows lower sensitivity to the Multiplying DAC (MDAC) errors and smaller area and power dissipation in comparison to the conventional multi-bit per stage pipelined ADC. Also, it is shown that the algorithmic pipelined architecture is more tolerant to capacitive mismatch for the same input-referred thermal noise than the conventional multi-bit per stage architecture. To take full advantage of these properties, a modified residue curve for the pipelined ADC is proposed. This concept introduces better linearity compared with the conventional residue curve of the pipelined ADC; this approach is particularly attractive for the digitization of signals with large peak to average ratio such as OFDM coded signals. Moreover, the minimum total required transconductance for the different architectures of the 12-bit pipelined ADC are computed. This helps the pipelined ADC designers to find the most power-efficient architecture between different topologies based on the same input-referred thermal noise. By employing this calculation, the most power efficient architecture for realizing the 12-bit pipelined ADC is selected. Then, a technique for slew-rate (SR) boosting in switched-capacitor circuits is proposed in the order to be utilized in the proposed 12-bit pipelined ADC. This technique makes use of a class-B auxiliary amplifier that generates a compensating current only when high slew-rate is demanded by large input signal. The proposed architecture employs simple circuitry to detect the need of injecting current at the output load by implementing a Pre-Amp followed by a class-B amplifier, embedded with a pre-defined hysteresis, in parallel with the main amplifier to boost its slew phase. The proposed solution requires small static power since it does not need high dc-current at the output stage of the main amplifier. The proposed technique is suitable for high-speed low-power multi-bit/stage pipelined ADC applications. Both transistor-level simulations and experimental results in TSMC 40nm technology reduces the slew-time for more than 45% and shorts the 1% settling time by 28% when used in a 4.5bit/stage pipelined ADC; power consumption increases by 20%. In addition, the technique of inactivating and disconnecting of the sub-ADC’s comparators by forecasting the sign of the sampled input voltage is proposed in the order to reduce the dynamic power consumption of the sub-ADCs in the proposed 12-bit pipelined ADC. This technique reduces the total dynamic power consumption more than 46%. The implemented 12-bit pipelined ADC achieves an SNDR/SFDR of 65.9/82.3 dB at low input frequencies and a 64.1/75.5 dB near Nyquist frequency while running at 500 MS/s. The pipelined ADC prototype occupies an active area of 0.9 mm^2 and consumes 18.16 mW from a 1.1 V supply, resulting in a figure of merit (FOM) of 22.4 and a 27.7 fJ/conversion-step at low-frequency and Nyquist frequency, respectively

Design of Analog & Mixed Signal Circuits in Continuous-Time Sigma-Delta Modulators for System-on-Chip applications

Software-defined radio receivers (SDRs) have become popular to accommodate multi-standard wireless services using a single chip-set solution in mobile telecommunication systems. In SDRs, the signal is down-converted to an intermediate frequency and then digitalized. This approach relaxes the specifications for most of the analog front-end building blocks by performing most of the signal processing in the digital domain. However, since the analog-to-digital converter (ADC) is located as close as possible to the antenna in SDR architectures, the ADC specification requirements are very stringent because a large amount of interference signals are present at the ADC input due to the removal of filtering blocks, which particularly affects the dynamic range (DR) specification. Sigma-delta (ΣΔ) ADCs have several benefits such as low implementation cost, especially when the architecture contains mostly digital circuits. Furthermore, continuous-time (CT) ΣΔ ADCs allow elimination of the anti‐aliasing filter because input signals are sampled after the integrator. The bandwidth requirements for the amplifiers in CT ΣΔ ADCs can be relaxed due to the continuous operation without stringing settling time requirements. Therefore, they are suitable for high‐speed and low‐power applications. In addition, CT ΣΔ ADCs achieve high resolution due to the ΣΔ modulator’s noise shaping property. However, the in-band quantization noise is shaped by the analog loop filter and the distortions of the analog loop filter directly affect the system output. Hence, highly linear low-noise loop filters are required for high-performance ΣΔ modulators. The first task in this research focused on using CMOS 90 nm technology to design and fabricate a 5^(TH)–order active-RC loop filter with a cutoff frequency of 20 MHz for a low pass (LP) CT ΣΔ modulator. The active-RC topology was selected because of the high DR requirement in SDR applications. The amplifiers in the first stage of the loop filter were implemented with linearization techniques employing anti-parallel cancellation and source degeneration in the second stage of the amplifiers. These techniques improve the third-order intermodulation (IM3) by approximately 10 dB; while noise, area, and power consumption do not increase by more than 10%. Second, a current-mode adder-flash ADC was also fabricated as part of a LP CT ΣΔ modulator. The new current-mode operation developed through this research makes possible a 53% power reduction. The new technology also lessens existing problems associated with voltage-mode flash ADCs, which are mainly related to voltage headroom restrictions, speed of operation, offsets, and power efficiency of the latches. The core of the current-mode adder-flash ADC was fabricated in CMOS 90 nm technology with 1.2 V supply; it dissipates 3.34 mW while operating at 1.48 GHz and consumes a die area of 0.0276 mm^(2). System-on chip (SoC) solutions are becoming more popular in mobile telecommunication systems to improve the portability and competitiveness of products. Since the analog/RF and digital blocks often share the same external power supply in SoC solutions, the on-chip generation of clean power supplies is necessary to avoid system performance degradation due to supply noises. Finally, the critical design issues for external capacitor-less low drop-out (LDO) regulators for SoC applications are addressed in this dissertation, especially the challenges related to power supply rejection at high frequencies as well as loop stability and transient response. The paths of the power supply noise to the LDO output were analyzed, and a power supply noise cancellation circuit was developed. The power supply rejection (PSR) performance was improved by using a replica circuit that tracks the main supply noise under process-voltage-temperature variations and all operating conditions. Fabricated in a 0.18 μm CMOS technology with 1.8 V supply, the entire proposed LDO consumes 55 μA of quiescent current while in standby operation, and it has a drop-out voltage of 200 mV when providing 50 mA to the load. Its active core chip area is 0.14 mm2. Compared to a conventional uncompensated LDO, the proposed architecture presents a PSR improvement of 34 dB and 25 dB at 1 MHz and 4 MHz, respectively

Low-Power Slew-Rate Boosting Based 12-Bit Pipeline ADC Utilizing Forecasting Technique in the Sub-ADCS

The dissertation presents architecture and circuit solutions to improve the power efficiency of high-speed 12-bit pipelined ADCs in advanced CMOS technologies. First, the 4.5bit algorithmic pipelined front-end stage is proposed. It is shown that the algorithmic pipelined ADC requires a simpler sub-ADC and shows lower sensitivity to the Multiplying DAC (MDAC) errors and smaller area and power dissipation in comparison to the conventional multi-bit per stage pipelined ADC. Also, it is shown that the algorithmic pipelined architecture is more tolerant to capacitive mismatch for the same input-referred thermal noise than the conventional multi-bit per stage architecture. To take full advantage of these properties, a modified residue curve for the pipelined ADC is proposed. This concept introduces better linearity compared with the conventional residue curve of the pipelined ADC; this approach is particularly attractive for the digitization of signals with large peak to average ratio such as OFDM coded signals. Moreover, the minimum total required transconductance for the different architectures of the 12-bit pipelined ADC are computed. This helps the pipelined ADC designers to find the most power-efficient architecture between different topologies based on the same input-referred thermal noise. By employing this calculation, the most power efficient architecture for realizing the 12-bit pipelined ADC is selected. Then, a technique for slew-rate (SR) boosting in switched-capacitor circuits is proposed in the order to be utilized in the proposed 12-bit pipelined ADC. This technique makes use of a class-B auxiliary amplifier that generates a compensating current only when high slew-rate is demanded by large input signal. The proposed architecture employs simple circuitry to detect the need of injecting current at the output load by implementing a Pre-Amp followed by a class-B amplifier, embedded with a pre-defined hysteresis, in parallel with the main amplifier to boost its slew phase. The proposed solution requires small static power since it does not need high dc-current at the output stage of the main amplifier. The proposed technique is suitable for high-speed low-power multi-bit/stage pipelined ADC applications. Both transistor-level simulations and experimental results in TSMC 40nm technology reduces the slew-time for more than 45% and shorts the 1% settling time by 28% when used in a 4.5bit/stage pipelined ADC; power consumption increases by 20%. In addition, the technique of inactivating and disconnecting of the sub-ADC’s comparators by forecasting the sign of the sampled input voltage is proposed in the order to reduce the dynamic power consumption of the sub-ADCs in the proposed 12-bit pipelined ADC. This technique reduces the total dynamic power consumption more than 46%. The implemented 12-bit pipelined ADC achieves an SNDR/SFDR of 65.9/82.3 dB at low input frequencies and a 64.1/75.5 dB near Nyquist frequency while running at 500 MS/s. The pipelined ADC prototype occupies an active area of 0.9 mm^2 and consumes 18.16 mW from a 1.1 V supply, resulting in a figure of merit (FOM) of 22.4 and a 27.7 fJ/conversion-step at low-frequency and Nyquist frequency, respectively

Design of a Limiting Amplifier for an Optical Receiver

The HEP experiments that take place at CERN’s LHC demand a multi-gigabit optical link for an efficient transmission of the resulting generated data. An optoelectronic link arises as the best solution given its possibility of working at high data rates and due to fiber’s imunnity to electromagnetic noise. The design of this optical link is particularly demanding due to the stringent data rate specifications (5Gb/s), the BER specification (1012) and the constraints imposed by radiation. In HEP, radiation is always a constraint so, the Optical Receiver circuit must be hardened in order to tolerate that kind of environment - radiation-tolerant. The core of a standard optoeletronic receiver includes a Photodiode, a Transimpedance Amplifier (TIA) and a Limiting Amplifier (LA). This thesis proposes the study and implementation of one of these blocks (LA), as the main focus, as well as the analysis and design of all three other blocks. The two major design constraints regarding the LA are the bandwidth and minimising its power consumption, which were overcome by using two bandwidth enhancement techniques. The circuit yields a bandwidth of 4:8GHz with a power consumption under 19mW. Another fundamental block is the Output Buffer. The major request for this block was maintaining relatively low transition times and improving the signal’s integrity. It has a differential output swing around 400mV with Pre-emphasis levels larger than 130%. The third block is the Received Signal Strength Indicator (RSSI). From a system point of view it is useful to have a measure of the input signal’s power so that the communication channel is used in its full potential. With a power consumption smaller than 600μW the RSSI presents an input dynamic range larger than 50 dB. The fourth block implements a Squelch function, in order to suppress unwanted output toggling due to noise. All these elements were developed in a TSMC 65nm CMOS process with a 1:2V supply voltage