Comparative Study of Various Systems on Chips Embedded in Mobile Devices

Systems-on-chips (SoCs) are the latest incarnation of very large scale integration (VLSI) technology. A single integrated circuit can contain over 100 million transistors. Harnessing all this computing power requires designers to move beyond logic design into computer architecture, meet real-time deadlines, ensure low-power operation, and so on. These opportunities and challenges make SoC design an important field of research. So in the paper we will try to focus on the various aspects of SOC and the applications offered by it. Also the different parameters to be checked for functional verification like integration and complexity are described in brief. We will focus mainly on the applications of system on chip in mobile devices and then we will compare various mobile vendors in terms of different parameters like cost, memory, features, weight, and battery life, audio and video applications. A brief discussion on the upcoming technologies in SoC used in smart phones as announced by Intel, Microsoft, Texas etc. is also taken up. Keywords: System on Chip, Core Frame Architecture, Arm Processors, Smartphone

Addressing Manufacturing Challenges in NoC-based ULSI Designs

Hernández Luz, C. (2012). Addressing Manufacturing Challenges in NoC-based ULSI Designs [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/1669

Near-Threshold Computing: Past, Present, and Future.

Transistor threshold voltages have stagnated in recent years, deviating from constant-voltage scaling theory and directly limiting supply voltage scaling. To overcome the resulting energy and power dissipation barriers, energy efficiency can be improved through aggressive voltage scaling, and there has been increased interest in operating at near-threshold computing (NTC) supply voltages. In this region sizable energy gains are achieved with moderate performance loss, some of which can be regained through parallelism. This thesis first provides a methodical definition of how near to threshold is "near threshold" and continues with an in-depth examination of NTC across past, present, and future CMOS technologies. By systematically defining near-threshold, the trends and tradeoffs are analyzed, lending insight in how best to design and optimize near-threshold systems. NTC works best for technologies that feature good circuit delay scalability, therefore technologies without strong short-channel effects. Early planar technologies (prior to 90nm or so) featured good circuit scalability (8x energy gains), but lacked area in which to add cores for parallelization. Recent planar nodes (32nm – 20nm) feature more area for cores but suffer from poor delay scalability, and so are not well-suited for NTC (4x energy gains). The switch to FinFET CMOS technology allows for a return to strong voltage scalability (8x gain), reversing trends seen in planar technologies, while dark silicon has created an opportunity to add cores for parallelization. Improved FinFET voltage scalability even allows for latency reduction of a single task, as long as the task is sufficiently parallelizable (< 10% serial code). Finally, we will look at a technique for fast voltage boosting, called Shortstop, in which a core's operating voltage is raised in 10s of cycles. Shortstop can be used to quickly respond to single-threaded performance demands of a near-threshold system by leveraging the innate parasitic inductance of a dedicated dirty supply rail, further improving energy efficiency. The technique is demonstrated in a wirebond implementation and is able to boost a core up to 1.8x faster than a header-based approach, while reducing supply droop by 2-7x. An improved flip-chip architecture is also proposed.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/113600/1/npfet_1.pd

Fine-grained parallelization of fitness functions in bioinformatics optimization problems: gene selection for cancer classification and biclustering of gene expression data

ANTECEDENTES: las metaheurísticas se utilizan ampliamente para resolver grandes problemas de optimización combinatoria en bioinformática debido al enorme conjunto de posibles soluciones. Dos problemas representativos son la selección de genes para la clasificación del cáncer y el agrupamiento de los datos de expresión génica. En la mayoría de los casos, estas metaheurísticas, así como otras técnicas no lineales, aplican una función de adecuación a cada solución posible con una población de tamaño limitado, y ese paso involucra latencias más altas que otras partes de los algoritmos, lo cual es la razón por la cual el tiempo de ejecución de las aplicaciones dependerá principalmente del tiempo de ejecución de la función de aptitud. Además, es habitual encontrar formulaciones aritméticas de punto flotante para las funciones de fitness. De esta manera, una paralelización cuidadosa de estas funciones utilizando la tecnología de hardware reconfigurable acelerará el cálculo, especialmente si se aplican en paralelo a varias soluciones de la población. RESULTADOS: una paralelización de grano fino de dos funciones de aptitud de punto flotante de diferentes complejidades y características involucradas en el biclustering de los datos de expresión génica y la selección de genes para la clasificación del cáncer permitió obtener mayores aceleraciones y cómputos de potencia reducida con respecto a los microprocesadores habituales. CONCLUSIONES: Los resultados muestran mejores rendimientos utilizando tecnología de hardware reconfigurable en lugar de los microprocesadores habituales, en términos de tiempo de consumo y consumo de energía, no solo debido a la paralelización de las operaciones aritméticas, sino también gracias a la evaluación de aptitud concurrente para varios individuos de la población en La metaheurística. Esta es una buena base para crear soluciones aceleradas y de bajo consumo de energía para escenarios informáticos intensivos.BACKGROUND: Metaheuristics are widely used to solve large combinatorial optimization problems in bioinformatics because of the huge set of possible solutions. Two representative problems are gene selection for cancer classification and biclustering of gene expression data. In most cases, these metaheuristics, as well as other non-linear techniques, apply a fitness function to each possible solution with a size-limited population, and that step involves higher latencies than other parts of the algorithms, which is the reason why the execution time of the applications will mainly depend on the execution time of the fitness function. In addition, it is usual to find floating-point arithmetic formulations for the fitness functions. This way, a careful parallelization of these functions using the reconfigurable hardware technology will accelerate the computation, specially if they are applied in parallel to several solutions of the population. RESULTS: A fine-grained parallelization of two floating-point fitness functions of different complexities and features involved in biclustering of gene expression data and gene selection for cancer classification allowed for obtaining higher speedups and power-reduced computation with regard to usual microprocessors. CONCLUSIONS: The results show better performances using reconfigurable hardware technology instead of usual microprocessors, in computing time and power consumption terms, not only because of the parallelization of the arithmetic operations, but also thanks to the concurrent fitness evaluation for several individuals of the population in the metaheuristic. This is a good basis for building accelerated and low-energy solutions for intensive computing scenarios.• Ministerio de Economía y Competitividad y Fondos FEDER. Contrato TIN2012-30685 (I+D+i) • Gobierno de Extremadura. Ayuda GR15011 para grupos TIC015 • CONICYT/FONDECYT/REGULAR/1160455. Beca para Ricardo Soto Guzmán • CONICYT/FONDECYT/REGULAR/1140897. Beca para Broderick CrawfordpeerReviewe

Scaling High-Performance Interconnect Architectures to Many-Core Systems.

The ever-increasing demand for performance scaling has made multi-core (2-8 cores) chips prevalent in today’s computing systems and foreshadows the shift toward many-core (10s- 100s of cores) chips in the near future. Although the potential performance gains from many-core systems remain appealing, the widespread adoption of these systems hinges on their ability to scale performance while simultaneously satisfying Quality-of-Service (QoS) and energy-efficiency constraints. This work makes the case that the interconnect for these many-core systems has a significant impact on the aforementioned scalability issues. The impact of interconnects on many-core systems is illustrated by observing that the degree of the interconnect has a signicant effect on system scalability and demonstrating that the architecture of high-radix, many-core systems are feasible, energy-efficient, and high-performance. The feasibility of high-radix crossbars for many-core systems is first shown through a new circuit-level building block called the Swizzle-Switch which can operate at frequencies up to 1.5GHz for 128-bit, radix-64 crossbars. This work then shows how a many-core system called the Swizzle-Switch Network (SSN) can use the Swizzle-Switch as the central building block for a flat crossbar interconnect. The SSN is shown to be advantageous to traditional Network-on-Chip (NoC) for systems up to 64 cores. The SSN performance by 21% relative to a Mesh while also providing a 25% energy savings over the Mesh. The Swizzle-Switch is also leveraged as a building block for high-radix NoC topologies that can support many-core architectures. The Swizzle-Switch-based Flattened Butterfly topology is demonstrated to provide a 15% speedup and 10% energy savings over the Mesh. Finally, the impact that 3D stacking technology has on many-core scalability is evaluated for bus and crossbar interconnects. A 3D-optimized Swizzle-Switch Network is able to leverage frequency gains to achieve a 15-28% speedup over a 2D-Swizzle-Switch Network when using memory- intensive benchmarks. Additionally, a bus-based 64-core architecture is shown to provide an average speedup of 49× over a baseline uniprocessor system when using 3D technology.PHDComputer Science & EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/93980/1/ksewell_1.pd

Low Voltage Circuit Design Techniques for Cubic-Millimeter Computing.

Cubic-millimeter computers complete with microprocessors, memories, sensors, radios and power sources are becomingly increasingly viable. Power consumption is one of the last remaining barriers to cubic-millimeter computing and is the subject of this work. In particular, this work focuses on minimizing power consumption in digital circuits using low voltage operation. Chapter 2 includes a general discussion of low voltage circuit behavior, specifically that at subthreshold voltages. In Chapter 3, the implications of transistor scaling on subthreshold circuits are considered. It is shown that the slow scaling of gate oxide relative to the device channel length leads to a 60% reduction in Ion/Ioff between the 90nm and 32nm nodes, which results in sub-optimal static noise margins, delay, and power consumption. It is also shown that simple modifications to gate length and doping can alleviate some of these problems. Three low voltage test-chips are discussed for the remainder of this work. The first test-chip implements the Subliminal Processor (Chapter 4), a sub-200mV 8-bit microprocessor fabricated in a 0.13µm technology. Measurements first show that the Subliminal Processor consumes only 3.5pJ/instruction at Vdd=350mV. Measurements of 20 dies then reveal that proper body biasing can eliminate performance variations and reduce mean energy substantially at low voltage. Finally, measurements are used to explore the effectiveness of body biasing, voltage scaling, and various gate sizing techniques for improving speed. The second test-chip implements the Phoenix Processor (Chapter 5), a low voltage 8-bit microprocessor optimized for minimum power operation in standby mode. The Phoenix Processor was fabricated in a 0.18µm technology in an area of only 915x915µm2. The aggressive standby mode strategy used in the Phoenix Processor is discussed thoroughly. Measurements at Vdd=0.5V show that the test-chip consumes 226nW in active mode and only 35.4pW in standby mode, making an on-chip battery a viable option. Finally, the third test-chip implements a low voltage image sensor (Chapter 6). A 128x128 image sensor array was fabricated in a 0.13µm technology. Test-chip measurements reveal that operation below 0.6V is possible with power consumption of only 1.9µW at 0.6V. Extensive characterization is presented with specific emphasis on noise characteristics and power consumption.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/62233/1/hansons_1.pd

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Reducing Power Loss, Cost and Complexity of SoC Power Delivery Using Integrated 3-Level Voltage Regulators

Traditional methods of system-on-chip (SoC) power management based on dynamic voltage and frequency scaling (DVFS) is limited by 1) cores/IP blocks sharing a voltage domain provided by off-chip voltage regulators (VR) and 2) slow voltage scaling time $(<0.1V/\mu s)$. This global, slow DVFS cannot track the increasingly heterogeneous, fluctuating performance requirements of individual microprocessor cores and SoC components. Furthermore, traditional off-chip VRs add significant area overhead and component cost on the board. This thesis explores replacing a large portion of existing off-chip VRs with integrated voltage regulators (IVR) that can scale the voltage at a 50 mV/ns rate, which is 500 times faster than microsecond-scale voltage scaling with existing off-chip VRs. IVRs occupy 10 times smaller footprint than off-chip VRs, making it easy to duplicate them to provide per-core or per-IP-block voltage control. This thesis starts by summarizing the benefits of using IVRs to deliver power to SoCs. Based on a simulation study targeting a 1.6W, 4-core SoC, I show that greater than 20% energy savings is possible with fast, per-core DVFS enabled by IVRs. Next, I present two stand-alone IVR test-chips converting 1.8V and 2.4V to 0.4-1.4V while delivering maximum 1W to the output. Both test-chips incorporate a 3-level VR topology, which is suitable for integration because the topology allows for much smaller inductors (1nH) than existing inductor-based buck VRs. I also discuss reasons behind lower-than-simulated efficiencies in the test-chips and ways to improve. Finally, I conclude with future process technologies that can boost IVR conversion efficiencies and power densities.Engineering and Applied Science

Fine-grained Energy and Thermal Management using Real-time Power Sensors

With extensive use of battery powered devices such as smartphones, laptops an