Highly efficient linear CMOS power amplifiers for wireless communications

The rapidly expanding wireless market requires low cost, high integration and high performance of wireless communication systems. CMOS technology provides benefits of cost effectiveness and higher levels of integration. However, the design of highly efficient linear CMOS power amplifier that meets the requirement of advanced communication standards is a challenging task because of the inherent difficulties in CMOS technology. The objective of this research is to realize PAs for wireless communication systems that overcoming the drawbacks of CMOS process, and to develop design approaches that satisfying the demands of the industry. In this dissertation, a cascode bias technique is proposed for improving linearity and reliability of the multi-stage cascode CMOS PA. In addition, to achieve load variation immunity characteristic and to enhance matching and stability, a fully-integrated balanced PA is implemented in a 0.18-m CMOS process. A triple-mode balanced PA using switched quadrature coupler is also proposed, and this work saved a large amount of quiescent current and further improved the efficiency in the back-off power. For the low losses and a high quality factor of passive output combining, a transformer-based quadrature coupler was implemented using integrated passive device (IPD) process. Various practical approaches for linear CMOS PA are suggested with the verified results, and they demonstrate the potential PA design approach for WCDMA applications using a standard CMOS technology.PhDCommittee Chair: Kenney, J. Stevenson; Committee Member: Jongman Kim; Committee Member: Kohl, Paul A.; Committee Member: Kornegay, Kevin T.; Committee Member: Lee, Chang-H

Study Of Design For Reliability Of Rf And Analog Circuits

Due to continued device dimensions scaling, CMOS transistors in the nanometer regime have resulted in major reliability and variability challenges. Reliability issues such as channel hot electron injection, gate dielectric breakdown, and negative bias temperature instability (NBTI) need to be accounted for in the design of robust RF circuits. In addition, process variations in the nanoscale CMOS transistors are another major concern in today‟s circuits design. An adaptive gate-source biasing scheme to improve the RF circuit reliability is presented in this work. The adaptive method automatically adjusts the gate-source voltage to compensate the reduction in drain current subjected to various device reliability mechanisms. A class-AB RF power amplifier shows that the use of a source resistance makes the power-added efficiency robust against threshold voltage and mobility variations, while the use of a source inductance is more reliable for the input third-order intercept point. A RF power amplifier with adaptive gate biasing is proposed to improve the circuit device reliability degradation and process variation. The performances of the power amplifier with adaptive gate biasing are compared with those of the power amplifier without adaptive gate biasing technique. The adaptive gate biasing makes the power amplifier more resilient to process variations as well as the device aging such as mobility and threshold voltage degradation. Injection locked voltage-controlled oscillators (VCOs) have been examined. The VCOs are implemented using TSMC 0.18 µm mixed-signal CMOS technology. The injection locked oscillators have improved phase noise performance than free running oscillators. iv A differential Clapp-VCO has been designed and fabricated for the evaluation of hot electron reliability. The differential Clapp-VCO is formed using cross-coupled nMOS transistors, on-chip transformers/inductors, and voltage-controlled capacitors. The experimental data demonstrate that the hot carrier damage increases the oscillation frequency and degrades the phase noise of Clapp-VCO. A p-channel transistor only VCO has been designed for low phase noise. The simulation results show that the phase noise degrades after NBTI stress at elevated temperature. This is due to increased interface states after NBTI stress. The process variability has also been evaluated

Design architectures of the CMOS power amplifier for 2.4 GHz ISM band applications: An overview

Power amplifiers (PAs) are among the most crucial functional blocks in the radio frequency (RF) frontend for reliable wireless communication. PAs amplify and boost the input signal to the required output power. The signal is amplified to make it sufficiently high for the transmitter to propagate the required distance to the receiver. Attempted advancements of PA have focused on attaining high-performance RF signals for transmitters. Such PAs are expected to require low power consumption while producing a relatively high output power with a high efficiency. However, current PA designs in nanometer and micrometer complementary metal–oxide semiconductor (CMOS) technology present inevitable drawbacks, such as oxide breakdown and hot electron effect. A well-defined architecture, including a linear and simple functional block synthesis, is critical in designing CMOS PA for various applications. This article describes the different state-of-the art design architectures of CMOS PA, including their circuit operations, and analyzes the performance of PAs for 2.4 GHz ISM (industrial, scientific, and medical) band applications

Doctor of Philosophy

dissertationHigh speed wireless communication systems (e.g., long-term evolution (LTE), Wi-Fi) operate with high bandwidth and large peak-to-average power ratios (PAPRs). This is largely due to the use of orthogonal frequency division multiplexing (OFDM) modulation that is prevalent to maximize the spectral efficiency of the communication system. The power amplifier (PA) in the transmitter is the dominant energy consumer in the radio, largely because of the PAPR of the input signal. To reduce the energy consumption of the PA an amplifier that simultaneously achieves high efficiency and high linearity. Furthermore, to lower the cost for high volume production, it is desirable to achieve a complete System-on-Chip (SoC) integration. Linear amplifiers (e.g., Class-A, -B, -AB) are inefficient when amplifying signals with large PAPR that is associated by high peak-to-average modulation techniques such as LTE. OFDM. Switching amplifiers (e.g., Class-D, -E, -F) are very promising due to their high efficiency when compared to their linear amplifier counterparts. Linearization techniques for switching amplifiers have been intensively investigated due to their limited sensitivity to the input amplitude of the signal. Deep-submicron CMOS technology is mostly utilized for logic circuitry, and the Moore's law scaling of CMOS optimizes transistors to operate as high-speed and low-loss switches rather than high gain transistors. Hence, it is advantageous to use transistors in switching mode as switching amplifies and use high-speed digital logic circuitry to implement linearization systems and circuitry. In this work, several linearization architectures are investigated and demonstrated. An envelope elimination and restoration (EER) transmitter that comprises a class-E power amplifier and a 10-bit digital-to-analog converter (DAC) controlled current modulator is investigated. A pipelined switched-capacitor DAC is designed to control an open-loop transconductor that operates as a current modulator, modulating the amplitude of the current supplied to a class-E PA. Such a topology allows for increased filtering of the quantization noise that is problematic in most digital PAs (DPA). The proposed quadrature and multiphase architecture can avoid the bandwidth expansion and delay mismatch associated with polar PAs. The multiphase switched capacitor power amplifier (SCPA) was proposed after the quadrature SCPA and it significantly improves the power efficiency

High Efficiency, Good phase linearity 0.18 µm CMOS Power Amplifier for MBAN-UWB Applications

This paper presents the design of 3.1-10.6 GHz class AB power amplifier (PA) suitable for medical body area network (MBAN) Ultra-Wide Band (UWB) applications in TSMC 0.18 µm technology. An optimization technique to simultaneously maximize power added efficiency(PAE) and minimize group delay variation is employed. Source and Load-pull contours are used to design inter and output stage matching circuits. The post-layout simulation results indicated that the designed PA has a maximum PAE of 32 % and an output 1-dB compression of 11 dBm at 4 GHz. In addition, a small group delay variation of ± 50 ps was realized over the whole required frequency band . Moreover, the proposed PA has small signal power gain (S21) of 12.5 dB with ripple less than 1.5 dB over the frequency range between 3.1 GHz to 10.6 GHz, while consuming 36 mW

Energy Efficient RF Transmitter Design using Enhanced Breakdown Voltage SOI-CMOS Compatible MESFETs

abstract: The high cut-off frequency of deep sub-micron CMOS technologies has enabled the integration of radio frequency (RF) transceivers with digital circuits. However, the challenging point is the integration of RF power amplifiers, mainly due to the low breakdown voltage of CMOS transistors. Silicon-on-insulator (SOI) metal semiconductor field effect transistors (MESFETs) have been introduced to remedy the limited headroom concern in CMOS technologies. The MESFETs presented in this thesis have been fabricated on different SOI-CMOS processes without making any change to the standard fabrication steps and offer 2-30 times higher breakdown voltage than the MOSFETs on the same process. This thesis explains the design steps of high efficiency and wideband RF transmitters using the proposed SOI-CMOS compatible MESFETs. This task involves DC and RF characterization of MESFET devices, along with providing a compact Spice model for simulation purposes. This thesis presents the design of several SOI-MESFET RF power amplifiers operating at 433, 900 and 1800 MHz with ~40% bandwidth. Measurement results show a peak power added efficiency (PAE) of 55% and a peak output power of 22.5 dBm. The RF-PAs were designed to operate in Class-AB mode to minimize the linearity degradation. Class-AB power amplifiers lead to poor power added efficiency, especially when fed with signals with high peak to average power ratio (PAPR) such as wideband code division multiple access (W-CDMA). Polar transmitters have been introduced to improve the efficiency of RF-PAs at backed-off powers. A MESFET based envelope tracking (ET) polar transmitter was designed and measured. A low drop-out voltage regulator (LDO) was used as the supply modulator of this polar transmitter. MESFETs are depletion mode devices; therefore, they can be configured in a source follower configuration to have better stability and higher bandwidth that MOSFET based LDOs. Measurement results show 350 MHz bandwidth while driving a 10 pF capacitive load. A novel polar transmitter is introduced in this thesis to alleviate some of the limitations associated with polar transmitters. The proposed architecture uses the backgate terminal of a partially depleted transistor on SOI process, which relaxes the bandwidth and efficiency requirements of the envelope amplifier in a polar transmitter. The measurement results of the proposed transmitter demonstrate more than three times PAE improvement at 6-dB backed-off output power, compared to the traditional RF transmitters.Dissertation/ThesisPh.D. Electrical Engineering 201

Design and Implementation of a Low‐Power Wireless Respiration Monitoring Sensor

Wireless devices for monitoring of respiration activities can play a major role in advancing modern home-based health care applications. Existing methods for respiration monitoring require special algorithms and high precision filters to eliminate noise and other motion artifacts. These necessitate additional power consuming circuitry for further signal conditioning. This dissertation is particularly focused on a novel approach of respiration monitoring based on a PVDF-based pyroelectric transducer. Low-power, low-noise, and fully integrated charge amplifiers are designed to serve as the front-end amplifier of the sensor to efficiently convert the charge generated by the transducer into a proportional voltage signal. To transmit the respiration data wirelessly, a lowpower transmitter design is crucial. This energy constraint motivates the exploration of the design of a duty-cycled transmitter, where the radio is designed to be turned off most of the time and turned on only for a short duration of time. Due to its inherent duty-cycled nature, impulse radio ultra-wideband (IR-UWB) transmitter is an ideal candidate for the implementation of a duty-cycled radio. To achieve better energy efficiency and longer battery lifetime a low-power low-complexity OOK (on-off keying) based impulse radio ultra-wideband (IR-UWB) transmitter is designed and implemented using standard CMOS process. Initial simulation and test results exhibit a promising advancement towards the development of an energy-efficient wireless sensor for monitoring of respiration activities

A review of technologies and design techniques of millimeter-wave power amplifiers

his article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design