Temporal and spatial combining for 5G mmWave small cells

This chapter proposes the combination of temporal processing through Rake combining based on direct sequence-spread spectrum (DS-SS), and multiple antenna beamforming or antenna spatial diversity as a possible physical layer access technique for fifth generation (5G) small cell base stations (SBS) operating in the millimetre wave (mmWave) frequencies. Unlike earlier works in the literature aimed at previous generation wireless, the use of the beamforming is presented as operating in the radio frequency (RF) domain, rather than the baseband domain, to minimise power expenditure as a more suitable method for 5G small cells. Some potential limitations associated with massive multiple input-multiple output (MIMO) for small cells are discussed relating to the likely limitation on available antennas and resultant beamwidth. Rather than relying, solely, on expensive and potentially power hungry massive MIMO (which in the case of a SBS for indoor use will be limited by a physically small form factor) the use of a limited number of antennas, complimented with Rake combining, or antenna diversity is given consideration for short distance indoor communications for both the SBS) and user equipment (UE). The proposal’s aim is twofold: to solve eroded path loss due to the effective antenna aperture reduction and to satisfy sensitivity to blockages and multipath dispersion in indoor, small coverage area base stations. Two candidate architectures are proposed. With higher data rates, more rigorous analysis of circuit power and its effect on energy efficiency (EE) is provided. A detailed investigation is provided into the likely design and signal processing requirements. Finally, the proposed architectures are compared to current fourth generation long term evolution (LTE) MIMO technologies for their anticipated power consumption and EE

Temporal and spatial combining for 5G mmWave small cells

This chapter proposes the combination of temporal processing through Rake combining based on direct sequence-spread spectrum (DS-SS), and multiple antenna beamforming or antenna spatial diversity as a possible physical layer access technique for fifth generation (5G) small cell base stations (SBS) operating in the millimetre wave (mmWave) frequencies. Unlike earlier works in the literature aimed at previous generation wireless, the use of the beamforming is presented as operating in the radio frequency (RF) domain, rather than the baseband domain, to minimise power expenditure as a more suitable method for 5G small cells. Some potential limitations associated with massive multiple input-multiple output (MIMO) for small cells are discussed relating to the likely limitation on available antennas and resultant beamwidth. Rather than relying, solely, on expensive and potentially power hungry massive MIMO (which in the case of a SBS for indoor use will be limited by a physically small form factor) the use of a limited number of antennas, complimented with Rake combining, or antenna diversity is given consideration for short distance indoor communications for both the SBS) and user equipment (UE). The proposal’s aim is twofold: to solve eroded path loss due to the effective antenna aperture reduction and to satisfy sensitivity to blockages and multipath dispersion in indoor, small coverage area base stations. Two candidate architectures are proposed. With higher data rates, more rigorous analysis of circuit power and its effect on energy efficiency (EE) is provided. A detailed investigation is provided into the likely design and signal processing requirements. Finally, the proposed architectures are compared to current fourth generation long term evolution (LTE) MIMO technologies for their anticipated power consumption and EE

IC-Antenna Co-Integration for Efficient and Scalable Millimeter-Wave Antenna Interfaces

Millimeter-wave (mm-wave) technology promises high speed, high system capacity and low latency interconnects with reduced cost. Applications like high data-rate wireless links, next generation automotive sensors and security body scanners highly depend on mm-wave technology innovations. As operating frequency moves to higher mm-wave bands, shrinking antenna dimensions enable co-integration of IC and antenna. Limited transistor output power at mm-wave requires multi-element arrays to satisfy communication and radar link budgets. This dissertation presents a wafer-scale compatible IC-antenna co-integration for efficient and scalable mm-wave antenna interfaces. The proposed IC-antenna co-integration approach is demonstrated through single antenna transmitters, a concurrent dual-polarization receiver front-end and polarization-duplex transmitter/receiver front-end. Chapter 2 discusses the challenge of mm-wave IC-antenna interfaces with prior art including antenna-in-package (AiP) and on-chip antennas. The 60 GHz efficient, scalable and wafer-scale compatible IC-antenna co-integration approach is presented demonstrating wide bandwidth and large efficiency which are comparable to system-level AiP techniques at a lower cost and fabrication complexity. Chapter 3 extends the proposed approach to a concurrent 60 GHz dual-polarization receiver front-end for short-range imaging/communication applications and polarization diversity based MIMO links. Active cancellation between orthogonal polarizations is adopted to achieve ∼ 30 dB cross-polarization leakage cancellation and concurrent dual-pol reception. Chapter 4 presents a 60 GHz simultaneous transmit and receive front-end to achieve efficient polarization-duplex operation based on dual-polarization IC-antenna co-integration. Transmitter leakage is suppressed at receiver input and output by intrinsic antenna isolation and a feed-forward passive canceller. Total average self-interference cancellation >40 dB is achieved for 1.07 GHz RF bandwidth at 60 GHz in the presence of a reflector

KEY FRONT-END CIRCUITS IN MILLIMETER-WAVE SILICON-BASED WIRELESS TRANSMITTERS FOR PHASED-ARRAY APPLICATIONS

Millimeter-wave (mm-Wave) phased arrays have been widely used in numerous wireless systems to perform beam forming and spatial filtering that can enhance the equivalent isotropically radiated power (EIRP) for the transmitter (TX). Regarding the existing phased-array architectures, an mm-Wave transmitter includes several building blocks to perform the desired delivered power and phases for wireless communication. Power amplifier (PA) is the most important building block. It needs to offer several advantages, e.g., high efficiency, broadband operation and high linearity. With the recent escalation of interest in 5G wireless communication technologies, mm-Wave transceivers at the 5G frequency bands (e.g., 28 GHz, 37 GHz, 39 GHz, and 60 GHz) have become an important topic in both academia and industry. Thus, PA design is a critical obstacle due to the challenges associated with implementing wideband, highly efficient and highly linear PAs at mm-Wave frequencies. In this dissertation, we present several PA design innovations to address the aforementioned challenges. Additionally, phase shifter (PS) also plays a key role in a phased-array system, since it governs the beam forming quality and steering capabilities. A high-performance phase shifter should achieve a low insertion loss, a wide phase shifting range, dense phase shift angles, and good input/output matching.Ph.D

A linear high-efficiency millimeter-wave CMOS Doherty radiator leveraging on-antenna active load-modulation

This thesis presents a Doherty Radiator architecture that explores multi-feed antennas to achieve an on-antenna Doherty load modulation network and demonstrate high-speed high-efficiency transmission of wideband modulated signals. On the passive circuits, we exploit the multi-feed antenna concept to realize compact and high-efficiency on-antenna active load modulation for close-to-ideal Doherty operation, on-antenna power combining, and mm-Wave signal radiation. Moreover, we analyze the far-field transmission of the proposed Doherty Radiator and demonstrate its wide Field-of-View (FoV). On the active circuits, we employ a GHz-bandwidth adaptive biasing at the Doherty Auxiliary power amplifier (PA) path to enhance the Main/Auxiliary Doherty cooperation and appropriate turning-on/-off of the Auxiliary path. A proof-of-concept Doherty Radiator implemented in a 45nm CMOS SOI process over 62-68GHz exhibits a consistent 1.45-1.53× PAE enhancement at 6dB PBO over an idealistic class-B PA with the same PAE at P1dB. The measured Continuous-Wave (CW) performance at 65GHz demonstrates 19.4/19.2dBm PSAT/P1dB and achieves 27.5%/20.1% PAE at peak/6dB PBO, respectively. For single-carrier 1Gsym/s 64-QAM modulation, the Doherty Radiator shows average output power of 14.2dBm with an average 20.2% PAE and -26.7dB EVM without digital predistortion. Consistent EVMs are observed over the entire antenna FoV, demonstrating spatially undistorted transmission and constant Doherty PBO efficiency enhancement.M.S

Efficient and Linear CMOS Power Amplifier and Front-end Design for Broadband Fully-Integrated 28-GHz 5G Phased Arrays

Demand for data traffic on mobile networks is growing exponentially with time and on a global scale. The emerging fifth-generation (5G) wireless standard is being developed with millimeter-wave (mm-Wave) links as a key technological enabler to address this growth by a 2020 time frame. The wireless industry is currently racing to deploy mm-Wave mobile services, especially in the 28-GHz band. Previous widely-held perceptions of fundamental propagation limitations were overcome using phased arrays. Equally important for success of 5G is the development of low-power, broadband user equipment (UE) radios in commercial-grade technologies. This dissertation demonstrates design methodologies and circuit techniques to tackle the critical challenge of key phased array front-end circuits in low-cost complementary metal oxide semiconductor (CMOS) technology. Two power amplifier (PA) proof-of-concept prototypes are implemented in deeply scaled 28- nm and 40-nm CMOS processes, demonstrating state-of-the-art linearity and efficiency for extremely broadband communication signals. Subsequently, the 40 nm PA design is successfully embedded into a low-power fully-integrated transmit-receive front-end module. The 28 nm PA prototype in this dissertation is the first reported linear, bulk CMOS PA targeting low-power 5G mobile UE integrated phased array transceivers. An optimization methodology is presented to maximizing power added efficiency (PAE) in the PA output stage at a desired error vector magnitude (EVM) and range to address challenging 5G uplink requirements. Then, a source degeneration inductor in the optimized output stage is shown to further enable its embedding into a two-stage transformer-coupled PA. The inductor helps by broadening inter-stage impedance matching bandwidth, and helping to reduce distortion. Designed and fabricated in 1P7M 28 nm bulk CMOS and using a 1 V supply, the PA achieves +4.2 dBm/9% measured Pout/PAE at −25 dBc EVM for a 250 MHz-wide, 64-QAM orthogonal frequency division multiplexing (OFDM) signal with 9.6 dB peak-to-average power ratio (PAPR). The PA also achieves 35.5%/10% PAE for continuous wave signals at saturation/9.6dB back-off from saturation. To the best of the author’s knowledge, these are the highest measured PAE values among published K- and K a-band CMOS PAs to date. To drastically extend the communication bandwidth in 28 GHz-band UE devices, and to explore the potential of CMOS technology for more demanding access point (AP) devices, the second PA is demonstrated in a 40 nm process. This design supports a signal radio frequency bandwidth (RFBW) >3× the state-of-the-art without degrading output power (i.e. range), PAE (i.e. battery life), or EVM (i.e. amplifier fidelity). The three-stage PA uses higher-order, dual-resonance transformer matching networks with bandwidths optimized for wideband linearity. Digital gain control of 9 dB range is integrated for phased array operation. The gain control is a needed functionality, but it is largely absent from reported high-performance mm-Wave PAs in the literature. The PA is fabricated in a 1P6M 40 nm CMOS LP technology with 1.1 V supply, and achieves Pout/PAE of +6.7 dBm/11% for an 8×100 MHz carrier aggregation 64-QAM OFDM signal with 9.7 dB PAPR. This PA therefore is the first to demonstrate the viability of CMOS technology to address even the very challenging 5G AP/downlink signal bandwidth requirement. Finally, leveraging the developed PA design methodologies and circuits, a low power transmit-receive phased array front-end module is fully integrated in 40 nm technology. In transmit-mode, the front-end maintains the excellent performance of the 40 nm PA: achieving +5.5 dBm/9% for the same 8×100 MHz carrier aggregation signal above. In receive-mode, a 5.5 dB noise figure (NF) and a minimum third-order input intercept point (IIP₃) of −13 dBm are achieved. The performance of the implemented CMOS frontend is comparable to state-of-the-art publications and commercial products that were very recently developed in silicon germanium (SiGe) technologies for 5G communication