Integrated Circuit Design for Hybrid Optoelectronic Interconnects

This dissertation focuses on high-speed circuit design for the integration of hybrid optoelectronic interconnects. It bridges the gap between electronic circuit design and optical device design by seamlessly incorporating the compact Verilog-A model for optical components into the SPICE-like simulation environment, such as the Cadence design tool. Optical components fabricated in the IME 130nm SOI CMOS process are characterized. Corresponding compact Verilog-A models for Mach-Zehnder modulator (MZM) device are developed. With this approach, electro-optical co-design and hybrid simulation are made possible. The developed optical models are used for analyzing the system-level specifications of an MZM based optoelectronic transceiver link. Link power budgets for NRZ, PAM-4 and PAM-8 signaling modulations are simulated at system-level. The optimal transmitter extinction ratio (ER) is derived based on the required receiver\u27s minimum optical modulation amplitude (OMA). A limiting receiver is fabricated in the IBM 130 nm CMOS process. By side- by-side wire-bonding to a commercial high-speed InGaAs/InP PIN photodiode, we demonstrate that the hybrid optoelectronic limiting receiver can achieve the bit error rate (BER) of 10-12 with a -6.7 dBm sensitivity at 4 Gb/s. A full-rate, 4-channel 29-1 length parallel PRBS is fabricated in the IBM 130 nm SiGe BiCMOS process. Together with a 10 GHz phase locked loop (PLL) designed from system architecture to transistor level design, the PRBS is demonstrated operating at more than 10 Gb/s. Lessons learned from high-speed PCB design, dealing with signal integrity issue regarding to the PCB transmission line are summarized

Low Power Analog Processing for Ultra-High-Speed Receivers with RF Correlation

Ultra-high-speed data communication receivers (Rxs) conventionally require analog digital converters (ADC)s with high sampling rates which have design challenges in terms of adequate resolution and power. This leads to ultra-high-speed Rxs utilising expensive and bulky high-speed oscilloscopes which are extremely inefficient for demodulation, in terms of power and size. Designing energy-efficient mixed-signal and baseband units for ultra-high-speed Rxs requires a paradigm approach detailed in this paper that circumvents the use of power-hungry ADCs by employing low-power analog processing. The low-power analog Rx employs direct-demodulation with RF correlation using low-power comparators. The Rx is able to support multiple modulations with highest modulation of 16-QAM reported so far for direct-demodulation with RF correlation. Simulations using Matlab, Simulink R2020a® indicate sufficient symbol-error rate (SER) performance at a symbol rate of 8 GS/s for the 71 GHz Urban Micro Cell and 140 GHz indoor channels. Power analysis undertaken with current analog, hybrid and digital beamforming approaches requiring ADCs indicates considerable power savings. This novel approach can be adopted for ultra-high-speed Rxs envisaged for beyond fifth generation (B5G)/sixth generation (6G)/ terahertz (THz) communication without the power-hungry ADCs, leading to low-power integrated design solutions

On the VCO/Frequency Divider Interface in Cryogenic CMOS PLL for Quantum Computing Applications

The availability of quantum microprocessors is mandatory, to efficiently run those quantum al-gorithms promising a radical leap forward in computation capability. Silicon-based nanostruc-tured qubits appear today as a very interesting approach, because of their higher information density, longer coherence times, fast operation gates, and compatibility with the actual CMOS technology. In particular, thanks to their phase noise properties, the actual CMOS RFIC Phase-Locked Loops (PLL) and Phase-Locked Oscillators (PLO) are interesting circuits to synthe-size control signals for spintronic qubits. In a quantum microprocessor, these circuits should op-erate close to the qubits, that is, at cryogenic temperatures. The lack of commercial cryogenic Design Kits (DK) may make the interface between the Voltage Controlled Oscillator (VCO) and the Frequency Divider (FD) a serious issue. Nevertheless, currently this issue has not been sys-tematically addressed in the literature. The aim of the present paper is to investigate the VCO/FD interface when the temperature drops from room to cryogenic. To this purpose, physi-cal models of electronics passive/active devices and equivalent circuits of VCO and the FD were developed at room and cryogenic temperatures. The modeling activity has led to design guide-lines for the VCO/FD interface, useful in the absence of cryogenic DKs

Phase Noise Analyses and Measurements in the Hybrid Memristor-CMOS Phase-Locked Loop Design and Devices Beyond Bulk CMOS

Phase-locked loop (PLLs) has been widely used in analog or mixed-signal integrated circuits. Since there is an increasing market for low noise and high speed devices, PLLs are being employed in communications. In this dissertation, we investigated phase noise, tuning range, jitter, and power performances in different architectures of PLL designs. More energy efficient devices such as memristor, graphene, transition metal di-chalcogenide (TMDC) materials and their respective transistors are introduced in the design phase-locked loop. Subsequently, we modeled phase noise of a CMOS phase-locked loop from the superposition of noises from its building blocks which comprises of a voltage-controlled oscillator, loop filter, frequency divider, phase-frequency detector, and the auxiliary input reference clock. Similarly, a linear time-invariant model that has additive noise sources in frequency domain is used to analyze the phase noise. The modeled phase noise results are further compared with the corresponding phase-locked loop designs in different n-well CMOS processes. With the scaling of CMOS technology and the increase of the electrical field, the problem of short channel effects (SCE) has become dominant, which causes decay in subthreshold slope (SS) and positive and negative shifts in the threshold voltages of nMOS and pMOS transistors, respectively. Various devices are proposed to continue extending Moore\u27s law and the roadmap in semiconductor industry. We employed tunnel field effect transistor owing to its better performance in terms of SS, leakage current, power consumption etc. Applying an appropriate bias voltage to the gate-source region of TFET causes the valence band to align with the conduction band and injecting the charge carriers. Similarly, under reverse bias, the two bands are misaligned and there is no injection of carriers. We implemented graphene TFET and MoS2 in PLL design and the results show improvements in phase noise, jitter, tuning range, and frequency of operation. In addition, the power consumption is greatly reduced due to the low supply voltage of tunnel field effect transistor

Architectures and Circuits Leveraging Injection-Locked Oscillators for Ultra-Low Voltage Clock Synthesis and Reference-less Receivers for Dense Chip-to-Chip Communications

High performance computing is critical for the needs of scientific discovery and economic competitiveness. An extreme-scale computing system at 1000x the performance of today’s petaflop machines will exhibit massive parallelism on multiple vertical fronts, from thousands of computational units on a single processor to thousands of processors in a single data center. To facilitate such a massively-parallel extreme-scale computing, a key challenge is power. The challenge is not power associated with base computation but rather the problem of transporting data from one chip to another at high enough rates. This thesis presents architectures and techniques to achieve low power and area footprint while achieving high data rates in a dense very-short reach (VSR) chip-to-chip (C2C) communication network. High-speed serial communication operating at ultra-low supplies improves the energy-efficiency and lowers the power envelop of a system doing an exaflop of loops. One focus area of this thesis is clock synthesis for such energy-efficient interconnect applications operating at high speeds and ultra-low supplies. A sub-integer clockfrequency synthesizer is presented that incorporates a multi-phase injection-locked ring-oscillator-based prescaler for operation at an ultra-low supply voltage of 0.5V, phase-switching based programmable division for sub-integer clock-frequency synthesis, and automatic calibration to ensure injection lock. A record speed of 9GHz has been demonstrated at 0.5V in 45nm SOI CMOS. It consumes 3.5mW of power at 9.12GHz and 0.052 of area, while showing an output phase noise of -100dBc/Hz at 1MHz offset and RMS jitter of 325fs; it achieves a net of -186.5 in a 45-nm SOI CMOS process. This thesis also describes a receiver with a reference-less clocking architecture for high-density VSR-C2C links. This architecture simplifies clock-tree planning in dense extreme-scaling computing environments and has high-bandwidth CDR to enable SSC for suppressing EMI and to mitigate TX jitter requirements. It features clock-less DFE and a high-bandwidth CDR based on master-slave ILOs for phase generation/rotation. The RX is implemented in 14nm CMOS and characterized at 19Gb/s. It is 1.5x faster that previous reference-less embedded-oscillator based designs with greater than 100MHz jitter tolerance bandwidth and recovers error-free data over VSR-C2C channels. It achieves a power-efficiency of 2.9pJ/b while recovering error-free data (BER 200MHz and the INL of the ILO-based phase-rotator (32- Steps/UI) is <1-LSB. Lastly, this thesis develops a time-domain delay-based modeling of injection locking to describe injection-locking phenomena in nonharmonic oscillators. The model is used to predict the locking bandwidth, and the locking dynamics of the locked oscillator. The model predictions are verified against simulations and measurements of a four-stage differential ring oscillator. The model is further used to predict the injection-locking behavior of a single-ended CMOS inverter based ring oscillator, the lock range of a multi-phase injection-locked ring-oscillator-based prescaler, as well as the dynamics of tracking injection phase perturbations in injection-locked masterslave oscillators; demonstrating its versatility in application to any nonharmonic oscillator

ULTRA-LOW-JITTER, MMW-BAND FREQUENCY SYNTHESIZERS BASED ON A CASCADED ARCHITECTURE

Department of Electrical EngineeringThis thesis presents an ultra-low-jitter, mmW-band frequency synthesizers based on a cascaded architecture. First, the mmW-band frequency synthesizer based on a CP PLL is presented. At the first stage, the CP PLL operating at GHz-band frequencies generated low-jitter output signals due to a high-Q VCO. At the second stage, an ILFM operating at mmW-band frequencies has a wide injection bandwidth, so that the jitter performance of the mmW-band output signals is determined by the GHz-range PLL. The proposed ultra-low-jitter, mmW-band frequency synthesizer based on a CP PLL, fabricated in a 65-nm CMOS technology, generated output signals from GHz-band frequencies to mmW-band frequencies, achieving an RMS jitter of 206 fs and an IPN of ???31 dBc. The active silicon area and the total power consumption were 0.32 mm2 and 42 mW, respectively. However, due to a large in-band phase noise contribution of a PFD and a CP in the CP PLL, this first stage was difficult to achieve an ultra-low in-band phase noise. Second, to improve the in-band phase noise further, the mmW-band frequency synthesizer based on a digital SSPLL is presented. At the first stage, the digital SSPLL operating at GHz-band frequencies generated ultra-low-jitter output signals due to its sub-sampling operation and a high-Q GHz VCO. To minimize the quantization noise of the voltage quantizer in the digital SSPLL, this thesis presents an OSVC as a voltage quantizer while a small amount of power was consumed. The proposed ultra-low-jitter, mmW-band frequency synthesizer fabricated in a 65-nm CMOS technology, generated output signals from GHz-band frequencies to mmW-band frequencies, achieving an RMS jitter of 77 fs and an IPN of ???40 dBc. The active silicon area and the total power consumption were 0.32 mm2 and 42 mW, respectively.clos

CMOS Signal Synthesizers for Emerging RF-to-Optical Applications

The need for clean and powerful signal generation is ubiquitous, with applications spanning the spectrum from RF to mm-Wave, to into and beyond the terahertz-gap. RF applications including mobile telephony and microprocessors have effectively harnessed mixed-signal integration in CMOS to realize robust on-chip signal sources calibrated against adverse ambient conditions. Combined with low cost and high yield, the CMOS component of hand-held devices costs a few cents per part per million parts. This low cost, and integrated digital processing, make CMOS an attractive option for applications like high-resolution imaging and ranging, and the emerging 5-G communication space. RADAR techniques when expanded to optical frequencies can enable micrometers of resolution for 3D imaging. These applications, however, impose upto 100x more exacting specifications on power and spectral purity at much higher frequencies than conventional RF synthesizers. This generation of applications will present unconventional challenges for transistor technologies - whether it is to squeeze performance in the conventionally used spectrum, already wrung dry, or signal generation and system design in the relatively emptier mm-Wave to sub-mmWave spectrum, much of the latter falling in the ``Terahertz Gap". Indeed, transistor scaling and innovative device physics leading to new transistor topologies have yielded higher cut-off frequencies in CMOS, though still lagging well behind SiGe and III-V semiconductors. To avoid multimodule solutions with functionality partitioned across different technologies, CMOS must be pushed out of its comfort zone, and technology scaling has to have accompanying breakthroughs in design approaches not only at the system but also at the block level. In this thesis, while not targeting a specific application, we seek to formulate the obstacles in synthesizing high frequency, high power and low noise signals in CMOS and construct a coherent design methodology to address them. Based on this, three novel prototypes to overcome the limiting factors in each case are presented. The first half of this thesis deals with high frequency signal synthesis and power generation in CMOS. Outside the range of frequencies where the transistor has gain, frequency generation necessitates harmonic extraction either as harmonic oscillators or as frequency multipliers. We augment the traditional maximum oscillation frequency metric (fmax), which only accounts for transistor losses, with passive component loss to derive an effective fmax metric. We then present a methodology for building oscillators at this fmax, the Maximum Gain Ring Oscillator. Next, we explore generating large signals beyond fmax through harmonic extraction in multipliers. Applying concepts of waveform shaping, we demonstrate a Power Mixer that engineers transistor nonlinearity by manipulating the amplitudes and relative phase shifts of different device nodes to maximize performance at a specific harmonic beyond device cut-off. The second half proposes a new architecture for an ultra-low noise phase-locked loop (PLL), the Reference-Sampling PLL. In conventional PLLs, a noisy buffer converts the slow, low-noise sine-wave reference signal to a jittery square-wave clock against which the phase of a noisy voltage-controlled oscillator (VCO) is corrected. We eliminate this reference buffer, and measure phase error by sampling the reference sine-wave with the 50x faster VCO waveform already available on chip, and selecting the relevant sample with voltage proportional to phase error. By avoiding the N-squared multiplication of the high-power reference buffer noise, and directly using voltage-mode phase error to control the VCO, we eliminate several noisy components in the controlling loop for ultra-low integrated jitter for a given power consumption. Further, isolation of the VCO tank from any varying load, unlike other contemporary divider-less PLL architectures, results in an architecture with record performance in the low-noise and low-spur space. We conclude with work that brings together concepts developed for clean, high-power signal generation towards a hybrid CMOS-Optical approach to Frequency-Modulated Continuous-Wave (FMCW) Light-Detection-And-Ranging (LIDAR). Cost-effective tunable lasers are temperature-sensitive and have nonlinear tuning profiles, rendering precise frequency modulations or 'chirps' untenable. Locking them to an electronic reference through an electro-optic PLL, and electronically calibrating the control signal for nonlinearity and ambient sensitivity, can make such chirps possible. Approaches that build on the body of advances in electrical PLLs to control the performance, and ease the specification on the design of optical systems are proposed. Eventually, we seek to leverage the twin advantages of silicon-intensive integration and low-cost high-yield towards developing a single-chip solution that uses on-chip signal processing and phased arrays to generate precise and robust chirps for an electronically-steerable fine LIDAR beam

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects