차세대 HBM 용 고집적, 저전력 송수신기 설계

학위논문 (박사) -- 서울대학교 대학원 : 공과대학 전기·정보공학부, 2020. 8. 정덕균.This thesis presents design techniques for high-density power-efficient transceiver for the next-generation high bandwidth memory (HBM). Unlike the other memory interfaces, HBM uses a 3D-stacked package using through-silicon via (TSV) and a silicon interposer. The transceiver for HBM should be able to solve the problems caused by the 3D-stacked package and TSV. At first, a data (DQ) receiver for HBM with a self-tracking loop that tracks a phase skew between DQ and data strobe (DQS) due to a voltage or thermal drift is proposed. The self-tracking loop achieves low power and small area by uti-lizing an analog-assisted baud-rate phase detector. The proposed pulse-to-charge (PC) phase detector (PD) converts the phase skew to a voltage differ-ence and detects the phase skew from the voltage difference. An offset calibra-tion scheme that can compensates for a mismatch of the PD is also proposed. The proposed calibration scheme operates without any additional sensing cir-cuits by taking advantage of the write training of HBM. Fabricated in 65 nm CMOS, the DQ receiver shows a power efficiency of 370 fJ/b at 4.8 Gb/s and occupies 0.0056 mm2. The experimental results show that the DQ receiver op-erates without any performance degradation under a ± 10% supply variation. In a second prototype IC, a high-density transceiver for HBM with a feed-forward-equalizer (FFE)-combined crosstalk (XT) cancellation scheme is pre-sented. To compensate for the XT, the transmitter pre-distorts the amplitude of the FFE output according to the XT. Since the proposed XT cancellation (XTC) scheme reuses the FFE implemented to equalize the channel loss, additional circuits for the XTC is minimized. Thanks to the XTC scheme, a channel pitch can be significantly reduced, allowing for the high channel density. Moreover, the 3D-staggered channel structure removes the ground layer between the verti-cally adjacent channels, which further reduces a cross-sectional area of the channel per lane. The test chip including 6 data lanes is fabricated in 65 nm CMOS technology. The 6-mm channels are implemented on chip to emulate the silicon interposer between the HBM and the processor. The operation of the XTC scheme is verified by simultaneously transmitting 4-Gb/s data to the 6 consecutive channels with 0.5-um pitch and the XTC scheme reduces the XT-induced jitter up to 78 %. The measurement result shows that the transceiver achieves the throughput of 8 Gb/s/um. The transceiver occupies 0.05 mm2 for 6 lanes and consumes 36.6 mW at 6 x 4 Gb/s.본 논문에서는 차세대 HBM을 위한 고집적 저전력 송수신기 설계 방법을 제안한다. 첫 번째로, 전압 및 온도 변화에 의한 데이터와 클럭 간 위상 차이를 보상할 수 있는 자체 추적 루프를 가진 데이터 수신기를 제안한다. 제안하는 자체 추적 루프는 데이터 전송 속도와 같은 속도로 동작하는 위상 검출기를 사용하여 전력 소모와 면적을 줄였다. 또한 메모리의 쓰기 훈련 (write training) 과정을 이용하여 효과적으로 위상 검출기의 오프셋을 보상할 수 있는 방법을 제안한다. 제안하는 데이터 수신기는 65 nm 공정으로 제작되어 4.8 Gb/s에서 370 fJ/b을 소모하였다. 또한 10 % 의 전압 변화에 대하여 안정적으로 동작하는 것을 확인하였다. 두 번째로, 피드 포워드 이퀄라이저와 결합된 크로스 토크 보상 방식을 활용한 고집적 송수신기를 제안한다. 제안하는 송신기는 크로스 토크 크기에 해당하는 만큼 송신기 출력을 왜곡하여 크로스 토크를 보상한다. 제안하는 크로스 토크 보상 방식은 채널 손실을 보상하기 위해 구현된 피드 포워드 이퀄라이저를 재활용함으로써 추가적인 회로를 최소화한다. 제안하는 송수신기는 크로스 토크가 보상 가능하기 때문에, 채널 간격을 크게 줄여 고집적 통신을 구현하였다. 또한 집적도를 더 증가시키기 위해 세로로 인접한 채널 사이의 차폐 층을 제거한 적층 채널 구조를 제안한다. 6개의 송수신기를 포함한 프로토타입 칩은 65 nm 공정으로 제작되었다. HBM과 프로세서 사이의 silicon interposer channel 을 모사하기 위한 6 mm 의 채널이 칩 위에 구현되었다. 제안하는 크로스 토크 보상 방식은 0.5 um 간격의 6개의 인접한 채널에 동시에 데이터를 전송하여 검증되었으며, 크로스 토크로 인한 지터를 최대 78 % 감소시켰다. 제안하는 송수신기는 8 Gb/s/um 의 처리량을 가지며 6 개의 송수신기가 총 36.6 mW의 전력을 소모하였다.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 4 CHAPTER 2 BACKGROUND ON HIGH-BANDWIDTH MEMORY 6 2.1 OVERVIEW 6 2.2 TRANSCEIVER ARCHITECTURE 10 2.3 READ/WRITE OPERATION 15 2.3.1 READ OPERATION 15 2.3.2 WRITE OPERATION 19 CHAPTER 3 BACKGROUNDS ON COUPLED WIRES 21 3.1 GENERALIZED MODEL 21 3.2 EFFECT OF CROSSTALK 26 CHAPTER 4 DQ RECEIVER WITH BAUD-RATE SELF-TRACKING LOOP 29 4.1 OVERVIEW 29 4.2 FEATURES OF DQ RECEIVER FOR HBM 33 4.3 PROPOSED PULSE-TO-CHARGE PHASE DETECTOR 35 4.3.1 OPERATION OF PULSE-TO-CHARGE PHASE DETECTOR 35 4.3.2 OFFSET CALIBRATION 37 4.3.3 OPERATION SEQUENCE 39 4.4 CIRCUIT IMPLEMENTATION 42 4.5 MEASUREMENT RESULT 46 CHAPTER 5 HIGH-DENSITY TRANSCEIVER FOR HBM WITH 3D-STAGGERED CHANNEL AND CROSSTALK CANCELLATION SCHEME 57 5.1 OVERVIEW 57 5.2 PROPOSED 3D-STAGGERED CHANNEL 61 5.2.1 IMPLEMENTATION OF 3D-STAGGERED CHANNEL 61 5.2.2 CHANNEL CHARACTERISTICS AND MODELING 66 5.3 PROPOSED FEED-FORWARD-EQUALIZER-COMBINED CROSSTALK CANCELLATION SCHEME 72 5.4 CIRCUIT IMPLEMENTATION 77 5.4.1 OVERALL ARCHITECTURE 77 5.4.2 TRANSMITTER WITH FFE-COMBINED XTC 79 5.4.3 RECEIVER 81 5.5 MEASUREMENT RESULT 82 CHAPTER 6 CONCLUSION 93 BIBLIOGRAPHY 95 초 록 102Docto

펄스 기반 피드 포워드 이퀄라이저를 갖춘 고용량 DRAM을 위한 컨트롤러 PHY 설계

학위논문 (박사) -- 서울대학교 대학원 : 공과대학 전기·정보공학부, 2020. 8. 김수환.A controller PHY for managed DRAM solution, which is a new memory structure to maximize capacity while minimizing refresh power, is presented. Inter-symbol interference is critical in such a high-capacity DRAM interface in which many DRAM chips share a command/address (C/A) channel. A pulse-based feed-forward equalizer (PB-FFE) is introduced to reduce ISI on a C/A channel. The controller PHY supports all the training sequences specified in the DDR4 standard. A glitch-free DCDL is also adopted to perform link training efficiently and to reduce training time. The DQ transmitter adopts quarter-rate architecture to reduce output latency. For the quarter-rate transmitters in DQ, we propose a quadrature error corrector (QEC), in which clock signal phase errors are corrected using two replicas of the 4:1 serializer of the output stage. Pulse shrinking is used to compare and equalize the outputs of these two replica serializers. A controller PHY was fabricated in 55nm CMOS. The PB-FFE increases the timing margin from 0.23UI to 0.29UI at 1067Mbps. At 2133Mbps, the read timing and voltage margins are 0.53UI and 211mV after read training, and the write margins are 0.72UI and 230mV after write training. To validate the QEC effectiveness, a prototype quarter-rate transmitter, including the QEC, was fabricated to another chip in 65nm CMOS. Adopting our QEC, the experimental results show that the output phase errors of the transmitter are reduced to a residual error of 0.8ps, and the output eye width and height are improved by 84% and 61%, respectively, at a data-rate of 12.8Gbps.본 연구에서 용량을 최대화하면서도 리프레시 전력을 최소화할 수 있는 새로운 메모리 구조인 관리형 DRAM 솔루션을 위한 컨트롤러 PHY를 제시하였다. 이와 같은 고용량 DRAM 인터페이스에서는 많은 DRAM 칩이 명령 / 주소 (C/A) 채널을 공유하고 있어서 심볼 간 간섭이 발생한다. 본 연구에서는 이러한 C/A 채널에서의 심볼 간 간섭을 줄이기 위해 펄스 기반 피드 포워드 이퀄라이저 (PB-FFE)를 채택하였다. 또한 본 연구의 컨트롤러 PHY는 DDR4 표준에 지정된 모든 트레이닝 시퀀스를 지원한다. 링크 트레이닝을 효율적으로 수행하고 트레이닝 시간을 줄이기 위해 글리치가 발생하지 않는 디지털 제어 지연 라인 (DCDL)을 채택하였다. 컨트롤러 PHY의 DQ 송신기는 출력 대기 시간을 줄이기 위해 쿼터 레이트 구조를 채택하였다. 쿼터 레이트 송신기의 경우에는 직교 클럭 간 위상 오류가 출력 신호의 무결성에 영향을 주게 된다. 이러한 영향을 최소화하기 위해 본 연구에서는 출력 단의 4 : 1 직렬 변환기의 두 복제본을 사용하여 클록 신호 위상 오류를 수정하는 QEC (Quadrature Error Corrector)를 제안하였다. 복제된 2개의 직렬 변환기의 출력을 비교하고 균등화하기 위해 펄스 수축 지연 라인이 사용되었다. 컨트롤러 PHY는 55nm CMOS 공정으로 제조되었다. PB-FFE는 1067Mbps에서 C/A 채널 타이밍 마진을 0.23UI에서 0.29UI로 증가시킨다. 읽기 트레이닝 후 읽기 타이밍 및 전압 마진은 2133Mbps에서 0.53UI 및 211mV이고, 쓰기 트레이닝 후 쓰기 마진은 0.72UI 및 230mV이다. QEC의 효과를 검증하기 위해 QEC를 포함한 프로토 타입 쿼터 레이트 송신기를 65nm CMOS의 다른 칩으로 제작하였다. QEC를 적용한 실험 결과, 송신기의 출력 위상 오류가 0.8ps의 잔류 오류로 감소하고, 출력 데이터 눈의 폭과 높이가 12.8Gbps의 데이터 속도에서 각각 84 %와 61 % 개선되었음을 보여준다.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.1.1 HEAVY LOAD C/A CHANNEL 5 1.1.2 QUARTER-RATE ARCHITECTURE IN DQ TRANSMITTER 7 1.1.3 SUMMARY 8 1.2 THESIS ORGANIZATION 10 CHAPTER 2 ARCHITECTURE 11 2.1 MDS DIMM STRUCTURE 11 2.2 MDS CONTROLLER 15 2.3 MDS CONTROLLER PHY 17 2.3.1 INITIALIZATION SEQUENCE 20 2.3.2 LINK TRAINING FINITE-STATE MACHINE 23 2.3.3 POWER DOWN MODE 28 CHAPTER 3 PULSE-BASED FEED-FORWARD EQUALIZER 29 3.1 COMMAND/ADDRESS CHANNEL 29 3.2 COMMAND/ADDRESS TRANSMITTER 33 3.3 PULSE-BASED FEED-FORWARD EQUALIZER 35 CHAPTER 4 CIRCUIT IMPLEMENTATION 39 4.1 BUILDING BLOCKS 39 4.1.1 ALL-DIGITAL PHASE-LOCKED LOOP (ADPLL) 39 4.1.2 ALL-DIGITAL DELAY-LOCKED LOOP (ADDLL) 44 4.1.3 GLITCH-FREE DCDL CONTROL 47 4.1.4 DUTY-CYCLE CORRECTOR (DCC) 50 4.1.5 DQ/DQS TRANSMITTER 52 4.1.6 DQ/DQS RECEIVER 54 4.1.7 ZQ CALIBRATION 56 4.2 MODELING AND VERIFICATION OF LINK TRAINING 59 4.3 BUILT-IN SELF-TEST CIRCUITS 66 CHAPTER 5 QUADRATURE ERROR CORRECTOR USING REPLICA SERIALIZERS AND PULSE-SHRINKING DELAY LINES 69 5.1 PHASE CORRECTION USING REPLICA SERIALIZERS AND PULSE-SHRINKING UNITS 69 5.2 OVERALL QEC ARCHITECTURE AND ITS OPERATION 71 5.3 FINE DELAY UNIT IN THE PSDL 76 CHAPTER 6 EXPERIMENTAL RESULTS 78 6.1 CONTROLLER PHY 78 6.2 PROTOTYPE QEC 88 CHAPTER 7 CONCLUSION 94 BIBLIOGRAPHY 96Docto

대역폭 증대 기술을 이용한 전력 효율적 고속 송신 시스템 설계

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022.2. 정덕균.The high-speed interconnect at the datacenter is being more crucial as 400 Gb Ethernet standards are developed. At the high data rate, channel loss re-quires bandwidth extension techniques for transmitters, even for short-reach channels. On the other hand, as the importance of east-to-west connection is rising, the data center architectures are switching to spine-leaf from traditional ones. In this trend, the number of short-reach optical interconnect is expected to be dominant. The vertical-cavity surface-emitting laser (VCSEL) is a com-monly used optical modulator for short-reach interconnect. However, since VCSEL has low bandwidth and nonlinearity, the optical transmitter also needs bandwidth-increasing techniques. Additionally, the power consumption of data centers reaches a point of concern to affect climate change. Therefore, this the-sis focuses on high-speed, power-efficient transmitters for data center applica-tions. Before the presenting circuit design, bandwidth extension techniques such as fractionally-spaced feed-forward equalizer (FFE), on-chip transmission line, inductive peaking, and T-coil are mathematically analyzed for their effec-tiveness. For the first chip, a power and area-efficient pulse-amplitude modulation 4 (PAM-4) transmitter using 3-tap FFE based on a slow-wave transmission line is presented. A passive delay line is adopted for generating an equalizer tap to overcome the high clocking power consumption. The transmission line achieves a high slow-wave factor of 15 with double floating metal shields around the differential coplanar waveguide. The transmitter includes 4:1 multi-plexers (MUXs) and a quadrature clock generator for high-speed data genera-tion in a quarter-rate system. The 4:1 MUX utilizes a 2-UI pulse generator, and the input configuration is determined by qualitative analysis. The chip is fabri-cated in 65 nm CMOS technology and occupies an area of 0.151 mm2. The proposed transmitter system exhibits an energy efficiency of 3.03 pJ/b at the data rate of 48 Gb/s with PAM-4 signaling. The second chip presents a power-efficient PAM-4 VCSEL transmitter using 3-tap FFE and negative-k T-coil. The phase interpolators (PIs) generate frac-tionally-spaced FFE tap and correct quadrature phase error. The PAM-4 com-bining 8:1 MUX is proposed rather than combining at output driver with double 4:1 MUXs to reduce serializing power consumption. T-coils at the internal and output node increase the bandwidth and remove inter-symbol interference (ISI). The negative-k T-coil at the output network increases the bandwidth 1.61 times than without T-coil. The VCSEL driver is placed on the high VSS domain for anode driving and power reduction. The chip is fabricated in 40 nm CMOS technology. The proposed VCSEL transmitter operates up to 48 Gb/s NRZ and 64 Gb/s PAM-4 with the power efficiency of 3.03 pJ/b and 2.09 pJ/b, respec-tively.400Gb 이더넷 표준이 개발됨에 따라 데이터 센터의 고속 상호 연결이 더욱 중요해지고 있다. 높은 데이터 속도에서의 채널 손실에 의해 단거리 채널의 경우에도 송신기에 대한 대역폭 확장 기술이 필요하다. 한편, 데이터 센터 내 동-서 연결의 중요성이 높아지면서 데이터 센터 아키텍처가 기존의 아키텍처에서 스파인-리프로 전환되고 있다. 이러한 추세에서 단거리 광학 인터커넥트의 수가 점차 우세해질 것으로 예상된다. 수직 캐비티 표면 방출 레이저(VCSEL)는 일반적으로 단거리 상호 연결을 위해 사용되는 광학 모듈레이터이다. VCSEL은 낮은 대역폭과 비선형성을 가지고 있기 때문에, 광 송신기도 대역폭 증가 기술을 필요로 한다. 또한, 데이터 센터의 전력 소비는 기후 변화에 영향을 미칠 수 있는 우려 지점에 도달했다. 따라서, 본 논문은 데이터 센터 응용을 위한 고속 전력 효율적인 송신기에 초점을 맞추고 있다. 회로 설계를 제시하기 전에, 부분 간격 피드-포워드 이퀄라이저 (FFE), 온칩 전송선로, 인덕터, T-코일과 같은 대역폭 확장 기술을 수학적으로 분석한다. 첫 번째 칩은 저속파 전송선로를 기반으로 한 3-탭 FFE를 사용하는 전력 및 면적 효율적인 펄스-진폭-변조 4(PAM-4) 송신기를 제시한다. 높은 클럭 전력 소비를 극복하기 위해 이퀄라이저 탭 생성을 위해 수동소자 지연 라인을 채택했다. 전송 라인은 차동 동일평면도파관 주위에 이중 플로팅 금속 차폐를 사용하여 15의 높은 전달속도 감쇠를 달성한다. 송신기에는 4:1 멀티플렉서(MUX)와 4-위상 클럭 생성기가 포함되어 있다. 4:1 MUX는 2-UI 펄스 발생기를 사용하며, 정성 분석에 의해 입력 구성이 결정된다. 이 칩은 65 nm CMOS 기술로 제작되었으며 0.151 mm2의 면적을 차지한다. 제안된 송신기 시스템은 PAM-4 신호와 함께 48 Gb/s의 데이터 속도에서 3.03 pJ/b의 에너지 효율을 보여준다. 두 번째 칩에서는 3-탭 FFE 및 역회전 T-코일을 사용하는 전력 효율적인 PAM-4 VCSEL 송신기를 제시한다. 위상 보간기(PI)는 부분 간격 FFE 탭을 생성하고 4-위상 클럭 오류를 수정하는 데 사용된다. 직렬화 전력 소비를 줄이기 위해 출력 드라이버에서 MSB와 LSB를 두 개의 4:1 MUX를 통해 결합하는 대신 8:1 MUX를 통해 PAM-4로 결합하는 회로가 제안된다. 내부 및 출력 노드에서 T-코일은 대역폭을 증가시키고 기호 간 간섭(ISI)을 제거한다. 출력 네트워크에서 역회전 T-코일은 T-코일이 없는 경우보다 대역폭을 1.61배 증가시킨다. VCSEL 드라이버는 양극 구동 및 전력 감소를 위해 높은 VSS 도메인에 배치된다. 이 칩은 40 nm CMOS 기술로 제작되었다. 제안된 VCSEL 송신기는 각각 3.03pJ/b와 2.09pJ/b의 전력 효율로 최대 48Gb/s NRZ와 64Gb/s PAM-4까지 작동한다.ABSTRACT I CONTENTS III LIST OF FIGURES V LIST OF TABLES IX CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 5 CHAPTER 2 BACKGROUND OF HIGH-SPEED INTERFACE 6 2.1 OVERVIEW 6 2.2 BASIS OF DATA CENTER ARCHITECTURE 9 2.3 SHORT-REACH INTERFACE STANDARDS 12 2.4 ANALYSES OF BANDWIDTH EXTENSION TECHNIQUES 16 2.4.1 FRACTIONALLY-SPACED FFE 16 2.4.2 TRANSMISSION LINE 21 2.4.3 INDUCTOR 24 2.4.4 T-COIL 33 CHAPTER 3 DESIGN OF 48 GB/S PAM-4 ELECTRICAL TRANSMITTER IN 65 NM CMOS 43 3.1 OVERVIEW 43 3.2 FFE BASED ON DOUBLE-SHIELDED COPLANAR WAVEGUIDE 46 3.2.1 BASIC CONCEPT 46 3.2.2 PROPOSED DOUBLE-SHIELDED COPLANAR WAVEGUIDE 47 3.3 DESIGN CONSIDERATION ON 4:1 MUX 50 3.4 PROPOSED PAM-4 ELECTRICAL TRANSMITTER 53 3.5 MEASUREMENT 57 CHAPTER 4 DESIGN OF 64 GB/S PAM-4 OPTICAL TRANSMITTER IN 40 NM CMOS 64 4.1 OVERVIEW 64 4.2 DESIGN CONSIDERATION OF OPTICAL TRANSMITTER 66 4.3 PROPOSED PAM-4 VCSEL TRANSMITTER 69 4.4 MEASUREMENT 82 CHAPTER 5 CONCLUSIONS 88 BIBLIOGRAPHY 90 초 록 101박

Design of reliable and energy-efficient high-speed interface circuits

The data-rate demand in high-speed interface circuits increases exponentially every year. High-speed I/Os are better implemented in advanced process technologies for lower-power systems, with the advantages of improved driving capability of the transistors and reduced parasitic capacitance. However, advanced technologies are not necessarily advantageous in terms of device reliability; in particular device failure from electrostatic discharge (ESD) becomes more likely in nano-scale process nodes. In order to secure ESD resiliency, the size of ESD devices on I/O pads should be sufficiently large, which may potentially reduce I/O speed. These two conflicting requirements in high-speed I/O design sometimes require sacrifice to one of the two properties. In this dissertation, three different approaches are proposed to achieve reliable and energy-efficient interface circuits. As the first approach, a novel ESD self-protection scheme to utilize “adaptive active bias conditioning” is proposed to reduce voltage stress on the vulnerable transistors, thereby reducing the burden on ESD protection devices. The second approach is to cancel out effective parasitic capacitance from ESD devices by the T-coil network. Voltage overshoot generated by magnetic coupling of the T-coil network can be suppressed by the proposed “inductance halving” technique, which reduces mutual inductance during ESD. The last approach employs system-level knowledge in the design of an ADC-based receiver for high intersymbol interference (ISI) channels. As a system-level performance metric, bit-error rate (BER) is adopted to mitigate a bit-resolution requirement in “BER-optimal ADC”, which can lead to 2× power-efficiency in the flash ADC and achieve a better BER performance

Cross-Layer Pathfinding for Off-Chip Interconnects

Off-chip interconnects for integrated circuits (ICs) today induce a diverse design space, spanning many different applications that require transmission of data at various bandwidths, latencies and link lengths. Off-chip interconnect design solutions are also variously sensitive to system performance, power and cost metrics, while also having a strong impact on these metrics. The costs associated with off-chip interconnects include die area, package (PKG) and printed circuit board (PCB) area, technology and bill of materials (BOM). Choices made regarding off-chip interconnects are fundamental to product definition, architecture, design implementation and technology enablement. Given their cross-layer impact, it is imperative that a cross-layer approach be employed to architect and analyze off-chip interconnects up front, so that a top-down design flow can comprehend the cross-layer impacts and correctly assess the system performance, power and cost tradeoffs for off-chip interconnects. Chip architects are not exposed to all the tradeoffs at the physical and circuit implementation or technology layers, and often lack the tools to accurately assess off-chip interconnects. Furthermore, the collaterals needed for a detailed analysis are often lacking when the chip is architected; these include circuit design and layout, PKG and PCB layout, and physical floorplan and implementation. To address the need for a framework that enables architects to assess the system-level impact of off-chip interconnects, this thesis presents power-area-timing (PAT) models for off-chip interconnects, optimization and planning tools with the appropriate abstraction using these PAT models, and die/PKG/PCB co-design methods that help expose the off-chip interconnect cross-layer metrics to the die/PKG/PCB design flows. Together, these models, tools and methods enable cross-layer optimization that allows for a top-down definition and exploration of the design space and helps converge on the correct off-chip interconnect implementation and technology choice. The tools presented cover off-chip memory interfaces for mobile and server products, silicon photonic interfaces, 2.5D silicon interposers and 3D through-silicon vias (TSVs). The goal of the cross-layer framework is to assess the key metrics of the interconnect (such as timing, latency, active/idle/sleep power, and area/cost) at an appropriate level of abstraction by being able to do this across layers of the design flow. In additional to signal interconnect, this thesis also explores the need for such cross-layer pathfinding for power distribution networks (PDN), where the system-on-chip (SoC) floorplan and pinmap must be optimized before the collateral layouts for PDN analysis are ready. Altogether, the developed cross-layer pathfinding methodology for off-chip interconnects enables more rapid and thorough exploration of a vast design space of off-chip parallel and serial links, inter-die and inter-chiplet links and silicon photonics. Such exploration will pave the way for off-chip interconnect technology enablement that is optimized for system needs. The basis of the framework can be extended to cover other interconnect technology as well, since it fundamentally relates to system-level metrics that are common to all off-chip interconnects

저전력, 저면적 유선 송수신기 설계를 위한 회로 기술

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2016. 8. 정덕균.In this thesis, novel circuit techniques for low-power and area-efficient wireline transceiver, including a phase-locked loop (PLL) based on a two-stage ring oscillator, a scalable voltage-mode transmitter, and a forwarded-clock (FC) receiver based on a delay-locked-loop (DLL) based per-pin deskew, are proposed. At first, a two-stage ring PLL that provides a four-phase, high-speed clock for a quarter-rate TX in order to minimize power consumption is presented. Several analyses and verification techniques, ranging from the clocking architectures for a high-speed TX to oscillation failures in a two-stage ring oscillator, are addressed in this thesis. A tri-state-inverter–based frequency-divider and an AC-coupled clock-buffer are used for high-speed operations with minimal power and area overheads. The proposed PLL fabricated in the 65-nm CMOS technology occupies an active area of 0.009 mm2 with an integrated-RMS-jitter of 414 fs from 10 kHz to 100 MHz while consuming 7.6 mW from a 1.2-V supply at 10 GHz. The resulting figure-of-merit is -238.8 dB, which surpasses that of the state-of-the-art ring-PLLs by 4 dB. Secondly, a voltage-mode (VM) transmitter which offers a wide operation range of 6 to 32 Gb/s, controllable pre-emphasis equalization and output voltage swing without altering output impedance, and a power supply scalability is presented. A quarter-rate clocking architecture is employed in order to maximize the scalability and energy efficiency across the variety of operating conditions. A P-over-N VM driver is used for CMOS compatibility and wide voltage-swing range required for various I/O standards. Two supply regulators calibrate the output impedance of the VM driver across the wide swing and pre-emphasis range. A single phase-locked loop is used to provide a wide frequency range of 1.5-to-8 GHz. The prototype chip is fabricated in 65-nm CMOS technology and occupies active area of 0.48x0.36 mm2. The proposed transmitter achieves 250-to-600-mV single-ended swing and exhibits the energy efficiency of 2.10-to-2.93 pJ/bit across the data rate of 6-to-32 Gb/s. And last, this thesis describes a power and area-efficient FC receiver and includes an analysis of the jitter tolerance of the FC receiver. In the proposed design, jitter tolerance is maximized according to the analysis by employing a DLL-based de-skewing. A sample-swapping bang-bang phase-detector (SS-BBPD) eliminates the stuck locking caused by the finite delay range of the voltage-controlled delay line (VCDL), and also reduces the required delay range of the VCDL by half. The proposed FC receiver is fabricated in 65-nm CMOS technology and occupies an active area of 0.025 mm2. At a data rate of 12.5 Gb/s, the proposed FC receiver exhibits an energy efficiency of 0.36 pJ/bit, and tolerates 1.4-UIpp sinusoidal jitter of 300 MHz.Chapter 1. Introduction 1 1.1. Motivation 1 1.2. Thesis organization 5 Chapter 2. Phase-Locked Loop Based on Two-Stage Ring Oscillator 7 2.1. Overivew 7 2.2. Background and Analysis of a Two-stage Ring Oscillator 11 2.3. Circuit Implementation of The Proposed PLL 25 2.4. Measurement Results 33 Chapter 3. A Scalable Voltage-Mode Transmitter 37 3.1. Overview 37 3.2. Design Considerations on a Scalable Serial Link Transmitter 40 3.3. Circuit Implementation 46 3.4. Measurement Results 56 Chapter 4. Delay-Locked Loop Based Forwarded-Clock Receiver 62 4.1. Overview 62 4.2. Timing and Data Recovery in a Serial Link 65 4.3. DLL-Based Forwarded-Clock Receiver Characteristics 70 4.4. Circuit Implementation 79 4.5. Measurement Results 89 Chapter 5. Conclusion 94 Appendix 96 Appendix A. Design flow to optimize a high-speed ring oscillator 96 Appendix B. Reflection Issues in N-over-N Voltage-Mode Driver 99 Appendix C. Analysis on output swing and power consumption of the P-over-N voltage-mode driver 107 Appendix D. Loop Dynamics of DLL 112 Bibliography 121 Abstract 128Docto

Novel Multicarrier Memory Channel Architecture Using Microwave Interconnects: Alleviating the Memory Wall

abstract: The increase in computing power has simultaneously increased the demand for input/output (I/O) bandwidth. Unfortunately, the speed of I/O and memory interconnects have not kept pace. Thus, processor-based systems are I/O and interconnect limited. The memory aggregated bandwidth is not scaling fast enough to keep up with increasing bandwidth demands. The term "memory wall" has been coined to describe this phenomenon. A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel. Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Design of Energy-Efficient A/D Converters with Partial Embedded Equalization for High-Speed Wireline Receiver Applications

As the data rates of wireline communication links increases, channel impairments such as skin effect, dielectric loss, fiber dispersion, reflections and cross-talk become more pronounced. This warrants more interest in analog-to-digital converter (ADC)-based serial link receivers, as they allow for more complex and flexible back-end digital signal processing (DSP) relative to binary or mixed-signal receivers. Utilizing this back-end DSP allows for complex digital equalization and more bandwidth-efficient modulation schemes, while also displaying reduced process/voltage/temperature (PVT) sensitivity. Furthermore, these architectures offer straightforward design translation and can directly leverage the area and power scaling offered by new CMOS technology nodes. However, the power consumption of the ADC front-end and subsequent digital signal processing is a major issue. Embedding partial equalization inside the front-end ADC can potentially result in lowering the complexity of back-end DSP and/or decreasing the ADC resolution requirement, which results in a more energy-effcient receiver. This dissertation presents efficient implementations for multi-GS/s time-interleaved ADCs with partial embedded equalization. First prototype details a 6b 1.6GS/s ADC with a novel embedded redundant-cycle 1-tap DFE structure in 90nm CMOS. The other two prototypes explain more complex 6b 10GS/s ADCs with efficiently embedded feed-forward equalization (FFE) and decision feedback equalization (DFE) in 65nm CMOS. Leveraging a time-interleaved successive approximation ADC architecture, new structures for embedded DFE and FFE are proposed with low power/area overhead. Measurement results over FR4 channels verify the effectiveness of proposed embedded equalization schemes. The comparison of fabricated prototypes against state-of-the-art general-purpose ADCs at similar speed/resolution range shows comparable performances, while the proposed architectures include embedded equalization as well

Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book