17 research outputs found

    Circuit Design Techniques For Wideband Phased Arrays

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    University of Minnesota Ph.D. dissertation.June 2015. Major: Electrical Engineering. Advisor: Ramesh Harjani. 1 computer file (PDF); xii, 143 pages.This dissertation focuses on beam steering in wideband phased arrays and phase noise modeling in injection locked oscillators. Two different solutions, one in frequency and one in time, have been proposed to minimize beam squinting in phased arrays. Additionally, a differential current reuse frequency doubler for area and power savings has been proposed. Silicon measurement results are provided for the frequency domain solution (IBM 65nm RF CMOS), injection locked oscillator model verification (IBM 130nm RF-CMOS) and frequency doubler (IBM 65nm RF CMOS), while post extraction simulation results are provided for the time domain phased array solution (the chip is currently under fabrication, TSMC 65nm RF CMOS). In the frequency domain solution, a 4-point passive analog FFT based frequency tunable filter is used to channelize an incoming wideband signal into multiple narrowband signals, which are then processed through independent phase shifters. A two channel prototype has been developed at 8GHz RF frequency. Three discrete phase shifts (0 & +/- 90 degrees) are implemented through differential I-Q swapping with appropriate polarity. A minimum null-depth of 19dB while a maximum null-depth of 27dB is measured. In the time domain solution, a discrete time approach is undertaken with signals getting sampled in order of their arrival times. A two-channel prototype for a 2GHz instantaneous RF bandwidth (7GHz-9GHz) has been designed. A QVCO generates quadrature LO signals at 8GHz which are phase shifted through a 5-bit (2 extra bits from differential I-Q swapping with appropriate polarity) cartesian combiner. Baseband sampling clocks are generated from phase shifted LOs through a CMOS divide by 4 with independent resets. The design achieves an average time delay of 4.53ps with 31.5mW of power consumption (per channel, buffers excluded). An injection locked oscillator has been analyzed in s-domain using Paciorek's time domain transient equations. The simplified analysis leads to a phase noise model identical to that of a type-I PLL. The model is equally applicable to injection locked dividers and multipliers and has been extended to cover all injection locking scenarios. The model has been verified against a discrete 57MHz Colpitt's ILO, a 6.5GHz ILFD and a 24GHz ILFM with excellent matching between the model and measurements. Additionally, a differential current reuse frequency doubler, for frequency outputs between 7GHz to 14GHz, design has been developed to reduce passive area and dc power dissipation. A 3-bit capacitive tuning along with a tail current source is used to better conversion efficiency. The doubler shows FOMT_{T} values between 191dBc/Hz to 209dBc/Hz when driven by a 0.7GHz to 5.8GHz wide tuning VCO with a phase noise that ranges from -114dBc/Hz to -112dBc/Hz over the same bandwidth

    Microwave CMOS VCOs and Front-Ends - using integrated passives on-chip and on-carrier

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    The increasing demand for high data rates in wireless communication systems is increasing the requirements on the transceiver front-ends, as they are pushed to utilize more and wider bands at higher frequencies. The work in this thesis is focused on receiver front-ends composed of Low Noise Amplifiers (LNAs), Mixers, and Voltage Controlled Oscillators (VCOs) operating at microwave frequencies. Traditionally, microwave electronics has used exclusive and more expensive semiconductor technologies (III-V materials). However, the rapid development of consumer electronics (e.g. video game consoles) the last decade has pushed the silicon CMOS IC technology towards even smaller feature sizes. This has resulted in high speed transistors (high fT and fmax) with low noise figures. However, as the breakdown voltages have decreased, a lower supply voltage must be used, which has had a negative impact on linearity and dynamic range. Nonetheless, todays downscaled CMOS technology is a feasible alternative for many microwave and even millimeter wave applications. The low quality factor (Q) of passive components on-chip usually limits the high frequency performance. For inductors realized in a standard CMOS process the substrate coupling results in a degraded Q. The quality factor can, however, be improved by moving the passive components off-chip and integrating them on a low loss carrier. This thesis therefore features microwave front-end and VCO designs in CMOS, where some designs have been flip-chip mounted on carriers featuring high Q inductors and low loss baluns. The thesis starts with an introduction to wireless communication, receiver architectures, front-end receiver blocks, and low loss carrier technology, followed by the included papers. The six included papers show the capability of CMOS and carrier technology at microwave frequencies: Papers II, III, and VI demonstrate fully integrated CMOS circuit designs. An LC-VCO using an accumulation mode varactor is presented in Paper II, a QVCO using 4-bit switched tuning is shown in Paper III, and a quadrature receiver front-end (including QVCO) is demonstrated in paper VI. Papers I and IV demonstrate receiver front-ends using low loss baluns on carrier for the LO and RF signals. Paper IV also includes a front-end using single-ended RF input which is converted to differential form in a novel merged LNA and balun. A VCO demonstrating the benefits of a high Q inductor on carrier is presented in Paper V

    SiGe-based broadband and high suppression frequency doubler ICs for wireless communications

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    制度:新 ; 報告番号:甲3419号 ; 学位の種類:博士(工学) ; 授与年月日:2011/9/15 ; 早大学位記番号:新574

    Quadrature Frequency Synthesis for Wideband Wireless Transceivers

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    University of Minnesota Ph.D. dissertation. May 2014. Major: Electrical Engineering. Advisor: Ramesh Harjani. 1 computer file (PDF); xi, 112 pages.In this thesis, three different techniques pertinent to quadrature LO generation in high data rate and wideband RF transceivers are presented. Prototype designs are made to verify the performance of the proposed techniques, in three different technologies: IBM 130nm CMOS process, TSMC 65nm CMOS process and IBM 32nm SOI process. The three prototype designs also cover three different frequency bands, ranging from 5GHz to 74GHz. First, an LO generation scheme for a 21 GHz center-frequency, 4-GHz instantaneous bandwidth channelized receiver is presented. A single 1.33 GHz reference source is used to simultaneously generate 20 GHz and 22 GHz LOs with quadrature outputs. Injection locking is used instead of conventional PLL techniques allowing low-power quadrature generation. A harmonic-rich signal, containing both even and odd harmonics of the input reference signal, is generated using a digital pulse slimmer. Two ILO chains are used to lock on to the 10th and 11th harmonics of the reference signal generating the 20 GHz and the 22 GHz quadrature LOs respectively. The prototype design is implemented in IBM's 130 nm CMOS process, draws 110 mA from a 1.2 V supply and occupies an active area of 1.8 square-mm. Next, a wide-tuning range QVCO with a novel complimentary-coupling technique is presented. By using PMOS transistors for coupling two VCOs with NMOS gm-cells, it is shown that significant phase-noise improvement (7-9 dB) can be achieved over the traditional NMOS coupling. This breaks the trade-off between quadrature accuracy and phase-noise, allowing reasonable accuracy without a significant phase-noise hit. The proposed technique is frequency-insensitive, allowing robust coupling over a wide tuning range. A prototype design is done in TSMC 65nm process, with 4-bits of discrete tuning spanning the frequency range 4.6-7.8 GHz (52% FTR) while achieving a minimum FOM of 181.4dBc/Hz and a minimum FOMT of 196dBc/Hz. Finally, a wide tuning-range millimeter wave QVCO is presented that employs a modified transformer-based super-harmonic coupling technique. Using the proposed technique, together with custom-designed inductors and metal capacitors, a prototype is designed in IBM 32nm SOI technology with 6-bits of discrete tuning using switched capacitors. Full EM-extracted simulations show a tuning range of 53.84GHz to 73.59GHz, with an FOM of 173 dBc/Hz and an FOMT of 183 dBc/Hz. With 19.75GHz of tuning range around a 63.7GHz center frequency, the simulated FTR is 31%, surpassing all similar designs in the same band. A slight modification in the tank inductors would enable the QVCO to be employed in multiple mm-Wave bands (57-66 GHz communication band, 71-76 GHz E-band, and 76-77 GHz radar band)

    The Design of Low Power Ultra-Wideband Transceiver

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    Ph.DDOCTOR OF PHILOSOPH

    ULTRA LOW POWER FSK RECEIVER AND RF ENERGY HARVESTER

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    This thesis focuses on low power receiver design and energy harvesting techniques as methods for intelligently managing energy usage and energy sources. The goal is to build an inexhaustibly powered communication system that can be widely applied, such as through wireless sensor networks (WSNs). Low power circuit design and smart power management are techniques that are often used to extend the lifetime of such mobile devices. Both methods are utilized here to optimize power usage and sources. RF energy is a promising ambient energy source that is widely available in urban areas and which we investigate in detail. A harvester circuit is modeled and analyzed in detail at low power input. Based on the circuit analysis, a design procedure is given for a narrowband energy harvester. The antenna and harvester co-design methodology improves RF to DC energy conversion efficiency. The strategy of co-design of the antenna and the harvester creates opportunities to optimize the system power conversion efficiency. Previous surveys have found that ambient RF energy is spread broadly over the frequency domain; however, here it is demonstrated that it is theoretically impossible to harvest RF energy over a wide frequency band if the ambient RF energy source(s) are weak, owing to the voltage requirements. It is found that most of the ambient RF energy lies in a series of narrow bands. Two different versions of harvesters have been designed, fabricated, and tested. The simulated and measured results demonstrate a dual-band energy harvester that obtains over 9% efficiency for two different bands (900MHz and 1800MHz) at an input power as low as -19dBm. The DC output voltage of this harvester is over 1V, which can be used to recharge the battery to form an inexhaustibly powered communication system. A new phase locked loop based receiver architecture is developed to avoid the significant conversion losses associated with OOK architectures. This also helps to minimize power consumption. A new low power mixer circuit has also been designed, and a detailed analysis is provided. Based on the mixer, a low power phase locked loop (PLL) based receiver has been designed, fabricated and measured. A power management circuit and a low power transceiver system have also been co-designed to provide a system on chip solution. The low power voltage regulator is designed to handle a variety of battery voltage, environmental temperature, and load conditions. The whole system can work with a battery and an application specific integrated circuit (ASIC) as a sensor node of a WSN network

    Design of Fully-Integrated High-Resolution Radars in CMOS and BiCMOS Technologies

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    The RADAR, acronym that stands for RAdio Detection And ranging, is a device that uses electromagnetic waves to detect the presence and the distance of an illuminated target. The idea of such a system was presented in the early 1900s to determine the presence of ships. Later on, with the approach of World War II, the radar gained the interest of the army who decided to use it for defense purposes, in order to detect the presence, the distance and the speed of ships, planes and even tanks. Nowadays, the use of similar systems is extended outside the military area. Common applications span from weather surveillance to Earth composition mapping and from flight control to vehicle speed monitoring. Moreover, the introduction of new ultrawideband (UWB) technologies makes it possible to perform radar imaging which can be successfully used in the automotive or medical field. The existence of a plenty of known applications is the reason behind the choice of the topic of this thesis, which is the design of fully-integrated high-resolution radars. The first part of this work gives a brief introduction on high resolution radars and describes its working principle in a mathematical way. Then it gives a comparison between the existing radar types and motivates the choice of an integrated solution instead of a discrete one. The second part concerns the analysis and design of two CMOS high-resolution radar prototypes tailored for the early detection of the breast cancer. This part begins with an explanation of the motivations behind this project. Then it gives a thorough system analysis which indicates the best radar architecture in presence of impairments and dictates all the electrical system specifications. Afterwards, it describes in depth each block of the transceivers with particular emphasis on the local oscillator (LO) generation system which is the most critical block of the designs. Finally, the last section of this part presents the measurement results. In particular, it shows that the designed radar operates over 3 octaves from 2 to 16GHz, has a conversion gain of 36dB, a flicker-noise-corner of 30Hz and a dynamic range of 107dB. These characteristics turn into a resolution of 3mm inside the body, more than enough to detect even the smallest tumor. The third and last part of this thesis focuses on the analysis and design of some important building blocks for phased-array radars, including phase shifter (PHS), true time delay (TTD) and power combiner. This part begins with an exhaustive introduction on phased array systems followed by a detailed description of each proposed lumped-element block. The main features of each block is the very low insertion loss, the wideband characteristic and the low area consumption. Finally, the major effects of circuit parasitics are described followed by simulation and measurement results
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