A 20 Gbps Scalable Load Balanced Birkhoff-von Neumann Symmetric TDM Switch IC with SERDES Interfaces

Abstract—For the first time, we implemented a reconfigurable load-balanced TDM switch IC with SERDES interface circuits for high speed networking applications. An N×N TDM switch could be constructed recursively from the TDM switch IC to achieve switching capacity of hundred gigabits per second or higher. The TDM switch IC contained a digital 8×8 TDM switch core with 8B10B CODECs and analog SERDES I/O interfaces. In the I/O interfaces, eight 2.56/3.2Gbps dual-mode 16/20:1 SERDES with CML buffers were developed. The 16/20:1 instead of 8/10:1 serializer and deserializer were used to reduce the required operating frequency in the switch core by half. New half-rate architectures and all static CMOS gates were used in the 16/20:1 serializer and deserializer for the low power consumption. A wide-band CML I/O buffer with our patented PMOS active load scheme was developed. All implementation were based on the 0.18 µm CMOS technology. Our implementation showed a 20 Gbps switching capacity for the 8×8 TDM switch IC.

1D-6 A 20 Gbps Scalable Load Balanced Birkhoff-von Neumann Symmetric TDM Switch IC with SERDES Interfaces

Abstract—For the first time, we implemented a reconfigurable load-balanced TDM switch IC with SERDES interface circuits for high speed networking applications. An N×N TDM switch could be constructed recursively from the TDM switch IC to achieve switching capacity of hundred gigabits per second or higher. The TDM switch IC contained a digital 8×8 TDM switch core with 8B10B CODECs and analog SERDES I/O interfaces. In the I/O interfaces, eight 2.56/3.2Gbps dual-mode 16/20:1 SERDES with CML buffers were developed. The 16/20:1 instead of 8/10:1 serializer and deserializer were used to reduce the required operating frequency in the switch core by half. New half-rate architectures and all static CMOS gates were used in the 16/20:1 serializer and deserializer for the low power consumption. A wide-band CML I/O buffer with our patented PMOS active load scheme was developed. All implementation were based on the 0.18 µm CMOS technology. Our implementation showed a 20 Gbps switching capacity for the 8×8 TDM switch IC